Produkte > BSS
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||||||
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BSS 131 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS 79C | Infineon Technologies | Trans GP BJT NPN 40V 0.8A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS 98 | Infineon Technologies | Trans MOSFET N-CH 50V 0.3A 3-Pin TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-C-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 50POS SMD GOLD Packaging: Tray Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 50 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 176 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 46 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-F-D-A | SAMTEC | Description: SAMTEC - BSS-025-01-F-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 50 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 50 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A-TR | SAMTEC | Description: SAMTEC - BSS-025-01-F-D-A-TR - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 50 Kontakt(e), Oberflächenmontage Kontaktüberzug: Hauchvergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 50 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-F-D-A-TR | Samtec Inc. | Description: .635MM DOUBLE ROW SOCKET ASSEMBL | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-025-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 93 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS-025-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 50POS SMD GOLD Packaging: Tray Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 50 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 180 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 348 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-025-01-L-D-A-TR | Samtec Inc. | Description: .635MM DOUBLE ROW SOCKET ASSEMBL | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-050-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD Packaging: Tray Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 100 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | auf Bestellung 355 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS-050-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | auf Bestellung 326 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-050-01-L-D-A | Samtec | Conn Micro Socket SKT 100 POS 0.635mm Solder ST SMD Tray | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 100POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-050-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 100 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD Tray | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 150POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 150POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 150 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-075-01-F-D-A-TR | Samtec | Conn Micro Socket SKT 150 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-F-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 3.00µin (0.076µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-H-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 30.0µin (0.76µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-084-01-L-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 168POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 168 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-C-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A | SAMTEC | Description: SAMTEC - BSS-100-01-F-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 200 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 200 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 3.00µin (0.076µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-LC | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-F-D-LC | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Lock Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-H-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 30.0µin (0.76µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | SAMTEC | Description: SAMTEC - BSS-100-01-L-D-A - Mezzanine-Steckverbinder, Buchse, 0.635 mm, 2 Reihe(n), 200 Kontakt(e), Oberflächenmontage Kontaktüberzug: Vergoldete Kontakte Rastermaß: 0.635 Anzahl der Kontakte: 200 Mezzanine-Steckverbinder: Buchse Anzahl der Reihen: 2 Kontaktmaterial: Phosphorbronze Steckverbindermontage: Oberflächenmontage Produktpalette: BSS SVHC: No SVHC (10-Jun-2022) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS-100-01-L-D-A-TR | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-A-TR | Samtec | Conn Micro Socket SKT 200 POS 0.635mm Solder ST SMD T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-DP-EM2 | Samtec Inc. | Description: CONN DIFF ARRAY RCPT 200POS EDGE Packaging: Tube Connector Type: Differential Pair Array, Female Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-EM2 | Samtec Inc. | Description: CONN SOCKET 200POS EDGE MNT GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-EM2-TR | Samtec Inc. | Description: CONN SOCKET 200POS EDGE MNT GOLD Packaging: Tape & Reel (TR) Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Board Edge, Straddle Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Contact Finish Thickness: 10.0µin (0.25µm) Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-LC | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tube Features: Board Lock Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-100-01-L-D-LC-TR | Samtec Inc. | Description: CONN SOCKET 200POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Lock Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 200 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Part Status: Active Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 50.0µin (1.27µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Features: Board Guide Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 3.00µin (0.076µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-F-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-H-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Features: Board Guide Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 30.0µin (0.76µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Board to Board & Mezzanine Connectors 0.635 mm Basic Blade & Beam Socket Strip, Edge Mount | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Features: Board Guide Packaging: Tube Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A | Samtec | Conn Micro Socket SKT 250 POS 0.635mm Solder ST SMD Tube | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-125-01-L-D-A-TR | Samtec Inc. | Description: CONN SOCKET 250POS SMD GOLD Packaging: Tape & Reel (TR) Features: Board Guide Connector Type: Socket, Center Strip Contacts Contact Finish: Gold Mounting Type: Surface Mount Number of Positions: 250 Pitch: 0.025" (0.64mm) Height Above Board: 0.135" (3.43mm) Contact Finish Thickness: 10.0µin (0.25µm) Mated Stacking Heights: 5mm Number of Rows: 2 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-C-D-A | Samtec Inc. | Description: CONN SOCKET 300POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-F-D-A | Samtec Inc. | Description: CONN SOCKET 300POS SMD GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-150-01-F-D-EM2 | Samtec Inc. | Description: CONN SOCKET 300POS EDGE MNT GOLD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-4 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-5 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-7 | Essentra | Essentra | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-8 | Essentra | Other Tools | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS-L100-001 | Isabellenhuette USA | Description: RESISTOR - BUS BAR SHUNT WITH NT Packaging: Tray Power (Watts): 20W Tolerance: ±5% Temperature Coefficient: ±50ppm/°C Mounting Type: Shunt Fixture, 60mm Pitch Type: Current Sensor Operating Temperature: -40°C ~ 125°C Applications: Automotive AEC-Q200 Resistance: 100 µOhms | auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS010A | Essentra Components | Description: PUSH FIT BUMPER: COMPATIBLE HOLE | auf Bestellung 13996 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS015A | Essentra | Mounting Fixings FLAT HEAD SPLIT STEM BUMPER:NYL NATURAL | auf Bestellung 10500 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS015A | Essentra Components | Description: PUSH FIT BUMPER: COMPATIBLE HOLE Packaging: Bag Color: Natural Size / Dimension: 0.750" Dia (19.05mm) Mounting Type: Push In Material: Nylon Shape: Cylindrical, Tapered Type: Bumper | auf Bestellung 10495 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS05-12 | VARCO | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS10 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS100 | HBE | Fuse: fast-acting; glass type; WTA; current: 100mA; voltage: 250V; dimensions: 5x20mm; equivalents: 0217.100MXP; 179020.0,1; 0034.1506 Fuse: fast-acting; 100mA Bss100 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS100 | onsemi | Description: MOSFET N-CH 100V 220MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 220mA, 10V Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS100 | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS100 | onsemi / Fairchild | MOSFET DISC BY MFG 2/02 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS101 | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS11 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS110 | onsemi | Description: MOSFET P-CH 50V 170MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS110 | INFINEON | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS110 | onsemi / Fairchild | MOSFET DISC BY MFG 2/02 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 | infineon | sot-23 09+ | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 | infineon | 03/04+ SOT23 | auf Bestellung 7900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 E6327 | INFINEON | sSh/23 | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS119 E6433 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E6433 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7796 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7796 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7978 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 E7978 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 H6327 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6327 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6433 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L6433 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L7796 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119 L7978 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6327XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6433 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V | auf Bestellung 86725 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119N H6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119N H6327 | Infineon | auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS119N H6327 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 43985 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119N H7796 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 7437 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | STMicroelectronics | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9146 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 38650 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.19A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Kind of channel: enhanced | auf Bestellung 7437 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 Produktcode: 118883 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS119NH6327XTSA1 | INFINEON | Description: INFINEON - BSS119NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.406 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 500mW Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 2.406ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 32465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 108200 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 41832 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon | N-MOSFET 100V 0.19A 6Ω BSS119NH6327XTSA1 BSS119NH6327 Infineon TBSS119n Anzahl je Verpackung: 250 Stücke | auf Bestellung 2790 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS119NH6327XTSA1 | onsemi | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | INFINEON | Description: INFINEON - BSS119NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.406 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 1.9V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 2.406ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.406ohm SVHC: No SVHC (17-Jan-2023) | auf Bestellung 32465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS119NH6433XTMA1 | Infineon Technologies | MOSFET OptiMOS Sm-Signal 100V 6Ohm 190mA | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS119NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS119NH7796 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 8803 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS119NH7978XTSA1 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS12 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2506 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ONSEMI | Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm | auf Bestellung 342758 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 17820 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V | auf Bestellung 68262 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123 | HXY MOSFET | Transistor N-Channel MOSFET; 100V; 20V; 9Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 HXY MOSFET TBSS123 HXY | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 402000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 249000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | Infineon Technologies | MOSFET N-Channel Small Signal MOSFETs (20 V to 800 V) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | SHIKUES | Transistor N-Channel MOSFET; 100V; 100V; 20V; 10Ohm; 170mA; 300mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SHIKUES TBSS123 SHK Anzahl je Verpackung: 500 Stücke | auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Case: SOT23 Kind of package: reel; tape Power dissipation: 0.36W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 405000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Case: SOT23 Kind of package: reel; tape Power dissipation: 0.36W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14 pF @ 25 V | auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123 | UMW | Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 UMW TBSS123 UMW Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | Fairchild | N-MOSFET 100V 170mA 6Ω 360mW BSS123 Fairchild TBSS123 FAI Anzahl je Verpackung: 250 Stücke | auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 405000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | ONSEMI | Description: ONSEMI - BSS123 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.2 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.2ohm | auf Bestellung 342758 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | HT Jinyu Semiconductor | N-Channel Enhancement Mode MOSFET | auf Bestellung 234000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 100V; 20V; 10Ohm; 170mA; 350mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 JSMICRO TBSS123 JSM Anzahl je Verpackung: 500 Stücke | auf Bestellung 1800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 4306 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123 | Fairchild/ON Semiconductor | N-канальний ПТ; Udss, В = 100; Id = 170 мА; Ptot, Вт = 0,36; Тип монт. = smd; Ciss, пФ @ Uds, В = 73 @ 25; Qg, нКл = 2,5 @ 10 В; Rds = 6 Ом @ 170 мА, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 1000 мкА; SOT-23-3 | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 17820 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123 | onsemi / Fairchild | MOSFET SOT-23 N-CH LOGIC | auf Bestellung 168247 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Technology: TRENCH POWER MV Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 100V Drain current: 0.16A On-state resistance: 5.5Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 | SLKOR | Transistor N-Channel MOSFET; 100V; 20V; 6Ohm; 150mA; 250mW; -55°C ~ 150°C; Equivalent: BSS123,215; BSS123LT1G; BSS123LT3G; BSS123LT7G; BSS123NH6327XTSA1; BSS123NH6433XTMA1; BSS123-7-F; BSS123-TP; BSS123 SLKOR TBSS123 SLK Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123 | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Technology: TRENCH POWER MV Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 100V Drain current: 0.16A On-state resistance: 5.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 25 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 E6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 E6433 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 E6433 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 H6327 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6327 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6433 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L6433 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123 L7874 | Infineon Technologies | MOSFET N-Ch 100V 170mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Mounting: SMD Features of semiconductor devices: logic level Case: SOT23; TO236AB Kind of package: reel; tape Power dissipation: 0.25W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 22806 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NXP Semiconductors | N-кан. MOSFET SOT-23 | auf Bestellung 289 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | NEXPERIA | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1899000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1899000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 138442 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 318000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | NXP | N-MOSFET 100V 150mA 6Ω 250mW BSS123,215 BSS123 NXP TBSS123 NXP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 9075 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 1899000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 138442 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 2152 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; 250mW; SOT23,TO236AB Mounting: SMD Features of semiconductor devices: logic level Case: SOT23; TO236AB Kind of package: reel; tape Power dissipation: 0.25W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 22806 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | NEXPERIA | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 2152 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 96000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | Nexperia | MOSFET BSS123/SOT23/TO-236AB | auf Bestellung 81470 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 9567 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | NEXPERIA | Description: NEXPERIA - BSS123,215 - Leistungs-MOSFET, n-Kanal, 100 V, 150 mA, 3.5 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 250mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3.5ohm | auf Bestellung 522000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123,215 | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | auf Bestellung 320582 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123,215 | NXP | N-MOSFET 100V 150mA 6Ω 250mW BSS123,215 BSS123 NXP TBSS123 NXP Anzahl je Verpackung: 3000 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123,215 | Nexperia | Trans MOSFET N-CH 100V 0.15A 3-Pin SOT-23 T/R | auf Bestellung 9567 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-13-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13P | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-13P | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7 | Diodes Incorporated | MOSFET 100V 360mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | DIODES INC. | Description: DIODES INC. - BSS123-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 343045 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1395000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 195000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 885000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1395000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes INC. | N-канальний ПТ; Udss, В = 100; Id = 170 мА; Ptot, Вт = 0,3; Тип монт. = smd; Ciss, пФ @ Uds, В = 60 @ 25; Rds = 6 Ом @ 170 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2 В @ 1000 мкА; SOT-23-3 | auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2828 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Incorporated | MOSFET 100V 360mW | auf Bestellung 332321 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 576000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2828 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 197158 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 885000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1395400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 576000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-7-F Produktcode: 148378 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123-7-F .K23 | DIODES/ZETEX | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R BSS123-13-F BSS123-7-F DIODES TBSS123-7-F Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123-7-F .K23 | DIODES/ZETEX | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R BSS123-13-F BSS123-7-F DIODES TBSS123-7-F Diodes Anzahl je Verpackung: 100 Stücke | auf Bestellung 2900 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123-7-F-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-7-F-50 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-E6327 Produktcode: 98887 | Siemens | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.17 Rds(on), Ohm: 6 Ciss, pF/Qg, nC: 55/1.78 JHGF: SMD | verfügbar 4037 Stück: 2995 Stück - stock Köln1042 Stück - lieferbar in 3-4 Wochen |
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BSS123-F169 | onsemi | Description: MOSFET N-CH SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F169 | onsemi | onsemi N-Channel Logic Level Enhancement Mode Field Effect Transistor 100V, 170 mA, 6O | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 0.2A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 100V 0.2A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | onsemi | Description: FET 100V 6.0 MOHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | ON Semiconductor | FET 100V 6.0 MOHM SOT23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-G | onsemi | MOSFET FET 100V 6.0 MOHM | auf Bestellung 11044 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-G | onsemi | Description: FET 100V 6.0 MOHM SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 34µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-ML | MOSLEADER | Description: 0.35W 100V 0.17A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-R1-00001 | Panjit | MOSFET SOT-23/MOS/SOT/NFET-100TMN | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-R2-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 195000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.35W Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 477000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | Micro Commercial Components (MCC) | MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W | auf Bestellung 10242 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 16997 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 33000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.35W Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123.215 Produktcode: 49331 | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.15 Rds(on), Ohm: 6 JHGF: SMD | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123/LF1R | Nexperia USA Inc. | Description: MOSFET N-CH 100V 150MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 120mA, 10V Power Dissipation (Max): 250mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-236AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123A | ZETEX | 06+; | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS123ATA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATA | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123ATC | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 25 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | auf Bestellung 294000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS123E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123E6327 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTMA1 | Infineon Technologies | Description: 100V N-CH SMALL SIGNAL MOSFET IN Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23-3-5 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTSA1 | INFINEON | Description: INFINEON - BSS123IXTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm | auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | auf Bestellung 13515 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | INFINEON | Description: INFINEON - BSS123IXTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 2.4ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm | auf Bestellung 1920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Technology: OptiMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W Gate charge: 0.63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 10 Stücke | auf Bestellung 2690 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | MOSFET SMALL SIGNAL MOSFETS | auf Bestellung 40348 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123IXTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Technology: OptiMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W Gate charge: 0.63nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 2690 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A 3-Pin SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 50 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-13 | Diodes Incorporated | MOSFET BSS Family SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-7 | Diodes Zetex | N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 230MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-7 | Diodes Incorporated | MOSFET BSS Family SOT23 T&R 3K | auf Bestellung 2990 Stücke: Lieferzeit 66-70 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123K-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 41143 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Components (MCC) | MOSFET N-Ch Enh FET 100Vds 0.17A 20Vgs 0.35W | auf Bestellung 24826 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123K-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.28A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123K-TP | Micro Commercial Co | Description: MOSFET N-CH 100V 170MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 250mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 39000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123KHE3-TP | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123KHE3-TP | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 280mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 780mW (Tj) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123KHE3-TP | Micro Commercial Components | BSS123KHE3-TP | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 25 V | auf Bestellung 132000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 23700 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Case: SOT23 Kind of package: reel; tape Power dissipation: 0.36W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 1435 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 48000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 23700 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.36W; SOT23 Mounting: SMD Features of semiconductor devices: logic level Case: SOT23 Kind of package: reel; tape Power dissipation: 0.36W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 12Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 1435 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | onsemi / Fairchild | MOSFET Small Signal MOSFET 100V 170mA 6 Ohm Single N-Channel SOT-23 | auf Bestellung 768019 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.5 pF @ 25 V | auf Bestellung 133490 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ONSEMI | Description: ONSEMI - BSS123L - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 | auf Bestellung 1508 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6327XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433HTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L6433XT | Infineon Technologies | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123L7874XT | Infineon Technologies | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 50µA Supplier Device Package: PG-SOT23 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LG | onsemi | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1 | onsemi | Description: MOSFET N-CH 100V 170MA SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1 | ON | SOT23 | auf Bestellung 437 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS123LT1 | onsemi | MOSFET 100V 170mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT1 | ON | auf Bestellung 3260 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123LT1G | ON-Semicoductor | N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F BSS123 smd TBSS123 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 9000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 42709 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | n-канальний польовий транзистор SOT-23-3 | auf Bestellung 100 Stücke: Lieferzeit 7-21 Tag (e) | ||||||||||||||||||||
BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 918000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONS | Транз. Пол. ММ N-MOSFET SOT23 Udss=100V; Id=0,15A; Pdmax=0,25W; Rds=6 Ohm | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 13448 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 84025 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ON-Semicoductor | N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F BSS123 smd TBSS123 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 13500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | onsemi | MOSFET 100V 170mA N-Channel | auf Bestellung 363337 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 159975 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 918000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 84025 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ON-Semicoductor | N-MOSFET 170mA 100V 360mW 6Ω BSS123, BSS123L6327, BSS123LT1G, BSS123-7-F BSS123 smd TBSS123 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 1420 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | ON Semiconductor | N-канальний ПТ; Udss, В = 100; Id = 0,2; Ptot, Вт = 0,2; Тип монт. = smd; Ciss, пФ @ Uds, В = 20 @ 25; Rds = 6 Ом @ 100 мA, 10 В; Tексп, °C = -55...+150; Ugs(th) = 2,8 В @ 1000 мкА; SOT-23-3 | auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 1122000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT1G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 13448 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123LT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.225W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.225W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 42709 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123LT1G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 161300 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123LT1G Produktcode: 42430 | ON | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 100 Idd,A: 0.17 Ciss, pF/Qg, nC: 20/ JHGF: SMD | verfügbar 3112 Stück: 115 Stück - stock Köln2997 Stück - lieferbar in 3-4 Wochen |
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BSS123LT1G | ONSEMI | Description: ONSEMI - BSS123LT1G - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.6V euEccn: NLR Verlustleistung: 225mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10VDC Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123LT3 | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT3G | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT3G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | onsemi | MOSFET NFET SOT23 100V 170MA 6.0 | auf Bestellung 24496 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS123LT7G | onsemi | Description: MOSFET N-CH 100V 15UA SOT23 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 225mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 1mA Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123LT7G | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123N H6327 | Infineon | auf Bestellung 546000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123N H6327 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 817236 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123N H6327 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | auf Bestellung 13600 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123N H6433 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 36535 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327 | Infineon technologies | auf Bestellung 3003 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123NH6327XT | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 636 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON | Description: INFINEON - BSS123NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 172895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 44950 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Technology: OptiMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W Gate charge: 0.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 35591 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 756826 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 201000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 Produktcode: 198093 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Technology: OptiMOS™ Mounting: SMD Case: SOT23 Power dissipation: 0.5W Gate charge: 0.6nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.77A Drain-source voltage: 100V Drain current: 0.15A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 35591 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 636 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | INFINEON | Description: INFINEON - BSS123NH6327XTSA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 172895 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 201752 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 144000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | MOSFET N-Ch 100V 190mA SOT-23-3 | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 228132 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123NH6433XTMA1 Produktcode: 190235 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.6nC Kind of channel: enhanced | auf Bestellung 2745 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive 3-Pin SOT-23 | auf Bestellung 903999 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3901 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON | Description: INFINEON - BSS123NH6433XTMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 32684 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 900000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.15A; Idm: 0.77A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.15A Pulsed drain current: 0.77A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 0.6nC Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 2745 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 190MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 13µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20.9 pF @ 25 V | auf Bestellung 220000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 900000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 0.19A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39850 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123NH6433XTMA1 | INFINEON | Description: INFINEON - BSS123NH6433XTMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 190 mA, 2.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 190mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 32684 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123NH6433XTMA1 | Infineon | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS123Q-13 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | DIODES INC. | Description: DIODES INC. - BSS123Q-13 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | DIODES INC. | Description: DIODES INC. - BSS123Q-13 - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9480 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-13 | Diodes Incorporated | MOSFET BSS Family SOT23 T&R 10K | auf Bestellung 56150 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-13 | Diodes Incorporated | Description: BSS FAMILY SOT23 T&R 10K Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 29787 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-13 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 680mA; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123Q-7 | Diodes Incorporated | MOSFET 2N7002 Family SOT23 T&R 3K | auf Bestellung 6810 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-7 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123Q-7 | Diodes Incorporated | Description: 2N7002 FAMILY SOT23 T&R 3K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123Q-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 960 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123Q-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.3W Application: automotive industry Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 10 Stücke | auf Bestellung 960 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123Q-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123T-HF | Comchip Technology | MOSFET 100V 0.19A SOT-23 | auf Bestellung 5798 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123T-HF | Comchip Technology | 100 V, N Channel MOSFET | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123T-HF | Comchip Technology | Description: MOSFET N-CH 100V 0.19A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Ta) Rds On (Max) @ Id, Vgs: 5.6Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 273053 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 285000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INC. | Description: DIODES INC. - BSS123TA - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2748 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 2495 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123TA | Diodes Incorporated | MOSFET N-Chnl 100V | auf Bestellung 77692 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 285000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | auf Bestellung 270000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | DIODES INC. | Description: DIODES INC. - BSS123TA - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2748 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | auf Bestellung 2987 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TA | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123TA | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.3W; SOT23 Mounting: SMD Case: SOT23 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Power dissipation: 0.3W Polarisation: unipolar | auf Bestellung 2495 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123TC | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | YY | 100V 200mA 3?@10V,200mA 150mW 1.8V@250uA 7pF@50V; N Channel; 32pF@50V;; -55C~+150C; SOT-323 MOSFETs BSS123W TBSS123W YY Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Technology: TRENCH POWER MV Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 100V Drain current: 0.16A On-state resistance: 5.5Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 15819 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | onsemi | Description: MOSFET N-CH 100V 170MA SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ONSEMI | Description: ONSEMI - BSS123W - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.39 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.39ohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 15819 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | YANGJIE TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TRENCH POWER MV; unipolar; 100V; 0.16A Technology: TRENCH POWER MV Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.35W Gate charge: 2.5nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.8A Drain-source voltage: 100V Drain current: 0.16A On-state resistance: 5.5Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | Taiwan Semiconductor | MOSFET 100V, 0.16A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | ONSEMI | Description: ONSEMI - BSS123W - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 1.39 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pins Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.39ohm | auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W | ON Semiconductor | Trans MOSFET N-CH 100V 0.17A 3-Pin SC-70 T/R | auf Bestellung 15819 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; Idm: 0.68A; 0.2W Mounting: SMD Case: SC70; SOT323 Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | onsemi | Description: MOSFET N-CH 100V 170MA SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 71 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W | onsemi / Fairchild | MOSFET 100V NCH ENHANCEMENT MODE TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.16A, SINGLE N-CHANNEL PO Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V | auf Bestellung 3553 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W RFG | Taiwan Semiconductor | MOSFET 100V, 0.16A, Single N-Channel Power MOSFET | auf Bestellung 3016 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W RFG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 0.16A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W RFG | Taiwan Semiconductor Corporation | Description: 100V, 0.16A, SINGLE N-CHANNEL PO Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 160mA, 10V Power Dissipation (Max): 298mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 30 pF @ 50 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7 | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7 | Diodes Incorporated | MOSFET 100V 200mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-7-F | DIODES INC. | Description: DIODES INC. - BSS123W-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 200mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 6ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 3875 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | DIODES/ZETEX | N-MOSFET 100V 170mA 6Ω 200mW BSS123W-7-F Diodes TBSS123w Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W-7-F | Diodes Incorporated | MOSFET 100V 200mW | auf Bestellung 51430 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 1056000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 1345429 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7-F | DIODES INC. | Description: DIODES INC. - BSS123W-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 3875 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123W-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123W-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.2W Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 6Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | auf Bestellung 117000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123W-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 1341000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123W-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Part Status: Active Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Components | Trans MOSFET N-CH 100V 0.17A 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Mounting: SMD Case: SOT323 Kind of package: reel; tape Power dissipation: 0.2W Gate charge: 2nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123W-TP | Micro Commercial Components (MCC) | MOSFET N-Channel Mosfets | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123WQ-7-F | Diodes Inc | Trans MOSFET N-CH 100V 0.17A Automotive 3-Pin SOT-323 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 292073 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123WQ-7-F | DIODES INC. | Description: DIODES INC. - BSS123WQ-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 8214 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123WQ-7-F | Diodes Incorporated | MOSFET 100V N-Ch Enh FET 100Vdgr 20Vgss 200mA | auf Bestellung 187419 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | Diodes Incorporated | Description: MOSFET N-CH 100V 170MA SOT323 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 291000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123WQ-7-F | Diodes Zetex | Trans MOSFET N-CH 100V 0.17A Automotive AEC-Q101 3-Pin SOT-323 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123WQ-7-F | DIODES INC. | Description: DIODES INC. - BSS123WQ-7-F - Leistungs-MOSFET, n-Kanal, 100 V, 170 mA, 6 ohm, SOT-323, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 170mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 200mW Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 200mW Bauform - Transistor: SOT-323 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 6ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 6ohm | auf Bestellung 8214 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS123WQ-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.17A; 0.2W; SOT323 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.17A Power dissipation: 0.2W Case: SOT323 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_D87Z | onsemi | Description: MOSFET N-CH 100V 170MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_Q | onsemi / Fairchild | MOSFET SOT-23 N-CH LOGIC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS123_R1_00001 | Panjit International Inc. | Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V | auf Bestellung 12095 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.5W Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 5 Stücke | auf Bestellung 8880 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS123_R1_00001 | Panjit International Inc. | Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 25 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R1_00001 | PanJit Semiconductor | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 170mA; Idm: 0.68A; 500mW Mounting: SMD Case: SOT23 Kind of package: reel; tape Power dissipation: 0.5W Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.68A Drain-source voltage: 100V Drain current: 0.17A On-state resistance: 10Ω Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 8880 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS123_R1_00001 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET-ESD Protected | auf Bestellung 9524 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS123_R2_00001 | Panjit | MOSFET 100V N-Channel Enhancement Mode MOSFET-ESD Protected | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS124 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS125 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS125 Produktcode: 51591 | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 600 Idd,A: 01.01.2000 Rds(on), Ohm: 45 JHGF: THT | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS125 | CSE | Fuse: fast-acting; glass type; WTA; current: 125mA; voltage: 250V; dimensions: 5x20mm; equivalents: 0217.125MXP; 179020.0,125; 0034.1507 Fuse: fast-acting; 125mA Bss125 Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126 E6327 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6906 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 E6906 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 H6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 5330 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126 H6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 26000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126 H6327 | Infineon | N-MOSFET 600V 0.021A 500Ω 500mW BSS126H6327XTSA2 BSS126H6327 Infineon TBSS126 Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126 H6906 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 8814 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126 H6906 | Infineon Technologies | Description: SMALL SIGNAL N-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 L6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 L6906 | Infineon Technologies | MOSFET SIPMOS Sm-Signal TRANSISTOR 600V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126 Transistor Produktcode: 61604 | Verschiedene Bauteile > Verschiedene Bauteile 2 | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS126H Produktcode: 113030 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS126H6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.021A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 700Ω Mounting: SMD Kind of channel: depleted Anzahl je Verpackung: 1 Stücke | auf Bestellung 2590 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON | Description: INFINEON - BSS126H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 21179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.021A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 700Ω Mounting: SMD Kind of channel: depleted | auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 6094 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 19610 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | INFINEON | Description: INFINEON - BSS126H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 21179 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 120119 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 43413 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 42228 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | INFINEON | Description: INFINEON - BSS126H6906XTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 39773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 43413 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | INFINEON | Description: INFINEON - BSS126H6906XTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 39773 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 7008 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 900000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126H6906XTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 4165 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23-3-5 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | INFINEON | Description: INFINEON - BSS126IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: SIPMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 2834 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | MOSFET SMALL SIGNAL MOSFETS | auf Bestellung 10531 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126IXTSA1 | INFINEON | Description: INFINEON - BSS126IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 280 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: SIPMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 280ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 280ohm | auf Bestellung 2834 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS126IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS126L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126L6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126L6906HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V 650V SOT23 T&R 10K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-13 | Diodes Incorporated | Description: DIODE GP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 8µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-7 | Diodes Incorporated | Description: DIODE GP SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V FET Feature: Depletion Mode Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 8µA Supplier Device Package: SOT-23-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 0V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 30.9 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS126SK-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 501V 650V SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 Produktcode: 40606 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS127 | N/A | SOT-23 05+ | auf Bestellung 208500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS127 | Infineon Technologies | MOSFET N-Channel Small Signal MOSFETs (20 V to 800 V) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 | Rectron USA | Description: MOSFET N-CHANNEL 600V 21MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 E6327 | Infineon Technologies | Infineon | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 E6327 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127 H6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 16970 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127 H6327 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 25951 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127 L6327 | Infineon Technologies | MOSFET N-Ch 600V 210mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127E6327 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | MOSFET N-Ch 600V 21mA SOT-23-3 | auf Bestellung 17625 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | INFINEON | Description: INFINEON - BSS127H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 13865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.021A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 4904 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 59394 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON | Description: INFINEON - BSS127H6327XTSA2 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 13865 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.021A; 0.5W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.021A Power dissipation: 0.5W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 500Ω Mounting: SMD Kind of channel: enhanced | auf Bestellung 4904 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon | N-MOSFET 600V 21mA 500Ω 500mW BSS127H6327XTSA2 BSS127H6327 Infineon TBSS127 Anzahl je Verpackung: 100 Stücke | auf Bestellung 5935 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 108000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127H6327XTSA2 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127IXTSA1 | INFINEON | Description: INFINEON - BSS127IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 500mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 310ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 8405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V SOT-23 T/RRDS(on)max.@ V GS=10V: 500 Ohm | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 6456 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127IXTSA1 | Infineon Technologies | MOSFET SMALL SIGNAL MOSFETS | auf Bestellung 15821 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127IXTSA1 | INFINEON | Description: INFINEON - BSS127IXTSA1 - Leistungs-MOSFET, n-Kanal, 600 V, 21 mA, 310 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 21mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 310ohm | auf Bestellung 8405 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127IXTSA1 | Infineon Technologies | Description: SMALL SIGNAL MOSFETS PG-SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 0.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 600V 21MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21mA (Ta) Rds On (Max) @ Id, Vgs: 500Ohm @ 16mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 2.6V @ 8µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 28 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127L6327XT | Infineon Technologies | Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | DIODES INC. | Description: DIODES INC. - BSS127S-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 610mW Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 80ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm | auf Bestellung 10465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Incorporated | MOSFET N-Ch Enh Mode FET 600V 160Ohm 70mA | auf Bestellung 37716 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70mA Power dissipation: 0.61W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 160Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 278857 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | DIODES INC. | Description: DIODES INC. - BSS127S-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm | auf Bestellung 10465 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 0.07A; 0.61W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 70mA Power dissipation: 0.61W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 160Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Inc | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 273000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 99000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SOT-23 T/R | auf Bestellung 348000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127S-7-50 | Diodes Zetex | N-Channel Enhancement Mode Field MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127S-7-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 3156 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SC59 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 57765 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127SSN-7 | DIODES INC. | Description: DIODES INC. - BSS127SSN-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SC-59, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3430 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 3156 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | Diodes Inc | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Incorporated | Description: MOSFET N-CH 600V 50MA SC59 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50mA (Ta) Rds On (Max) @ Id, Vgs: 160Ohm @ 16mA, 10V Power Dissipation (Max): 610mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 1.08 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 21.8 pF @ 25 V | auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127SSN-7 | DIODES INC. | Description: DIODES INC. - BSS127SSN-7 - Leistungs-MOSFET, n-Kanal, 600 V, 50 mA, 80 ohm, SC-59, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 50mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 610mW Bauform - Transistor: SC-59 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 80ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 3430 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS127SSN-7 | Diodes Incorporated | MOSFET BSS Family,SC59 Family,SC59,3K | auf Bestellung 12037 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS127SSN-7 | Diodes Zetex | Trans MOSFET N-CH 600V 0.07A 3-Pin SC-59 T/R | auf Bestellung 57000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS127SSN-7 | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 40mA; Idm: 0.16A; 0.61W; SC59 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 40mA Pulsed drain current: 0.16A Power dissipation: 0.61W Case: SC59 Gate-source voltage: ±20V On-state resistance: 190Ω Mounting: SMD Gate charge: 1.08nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS129 | SIEMENS | SMD | auf Bestellung 101000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS129 | PHI | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS129 | Vishay | Trans MOSFET N-CH Si 230V 0.15A 3-Pin TO-92 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS13 | PHI/MOT | auf Bestellung 18900 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||||||
BSS131 | YFW | Transistor N-Channel MOSFET; 240V; +/-20V; 14Ohm; 100mA; 360mW; -55°C~150°C; Substitute: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 H6327; BSS131 TBSS131 c Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | SLKOR | Transistor N-Channel MOSFET; 240V; 20V; 20Ohm; 110mA; 360mW; -55°C ~ 150°C; Equivalent: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 SLKOR TBSS131 SLK Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | HXY MOSFET | Transistor N-Channel MOSFET; 240V; +/-20V; 14Ohm; 100mA; 360mW; -55°C~150°C; Substitute: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 H6327; BSS131 TBSS131 c Anzahl je Verpackung: 100 Stücke | auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 250V; 20V; 4,5Ohm; 100mA; 1,5W; -55°C ~ 150°C; Equivalent: BSS131H6327XTSA1; BSS131E6327; BSS131L6327HTSA1; BSS131 JSMICRO TBSS131 JSM Anzahl je Verpackung: 100 Stücke | auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131 (SOT-23) Produktcode: 33823 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS131 E6327 | Infineon Technologies | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131 H6327 | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 29746 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131 H6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 26600 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131 L6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131 L6327 | Infineon Technologies | MOSFET N-Ch 240V 110mA SOT-23-3 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131E6327 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131E6327 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327 Produktcode: 122768 | Infineon | Transistoren > MOSFET N-CH Uds,V: 240 V Idd,A: 0,11 A Rds(on), Ohm: 14 Ohm Ciss, pF/Qg, nC: 58/2,1 JHGF: SMD | auf Bestellung 465 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS131H6327 | Infineon Technologies | BSS131 МОП-транзистор N-Channel 240V 100mA 360mW SOT23 | auf Bestellung 51 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XT | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 18041 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 7973 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced | auf Bestellung 11709 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | SHENZHEN YANGXING TECHNOLOGY CO., LTD. | BSS131H6327XTSA1 | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 7973 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 0.1A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.1A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 14Ω Mounting: SMD Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 11709 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | INFINEON | Description: INFINEON - BSS131H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 240 V, 110 mA, 7.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 240V rohsCompliant: YES Dauer-Drainstrom Id: 110mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 71288 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 35649 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | auf Bestellung 153000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | MOSFET N-Ch 240V 100mA SOT-23-3 | auf Bestellung 180451 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131H6327XTSA1 | INFINEON | Description: INFINEON - BSS131H6327XTSA1 - Leistungs-MOSFET, n-Kanal, 240 V, 110 mA, 7.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 240V rohsCompliant: YES Dauer-Drainstrom Id: 110mA hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 71288 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS131H6327XTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | auf Bestellung 15147 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon | N-MOSFET 110mA 240V 360mW 14Ω BSS131 TBSS131 Anzahl je Verpackung: 100 Stücke | auf Bestellung 345 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS131H6327XTSA1 | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 81000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS131L6327HTSA1 | Infineon Technologies | Description: MOSFET N-CH 240V 110MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110mA (Ta) Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.8V @ 56µA Supplier Device Package: PG-SOT23 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS131L6327XT | INFINEON | 09+ MSOP8 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS131L6327XT | Infineon Technologies | Trans MOSFET N-CH 240V 0.11A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS134N | INFINEON | SOT-23 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS135 Produktcode: 77919 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS135 | auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 54000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 36577 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1797000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | LGE | Transistor N-MOSFET; 50V; 10V; 3,5Ohm; 220mA; 350mW; -55°C~150°C; BSS138 SOT23 LGE TBSS138 LGE Anzahl je Verpackung: 500 Stücke | auf Bestellung 670 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | HT Jinyu Semiconductor | N-Channel Enhancement Mode Field Effect Transistor | auf Bestellung 711000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON-Semicoductor | N-MOSFET 50V 220mA 3.5Ω 360mW BSS138 Fairchild TBSS138 FAI Anzahl je Verpackung: 100 Stücke | auf Bestellung 340 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | Good-Ark Electronics | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 294000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | SLKOR | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 225mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 SLKOR TBSS138 SL | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | HXY MOSFET | Transistor N-Channel MOSFET; 50V; 20V; 2Ohm; 220mA; 350mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 HXY MOSFET TBSS1 Anzahl je Verpackung: 500 Stücke | auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | YY | Transistor N-Channel MOSFET; 50V; 220mA; 360mW; 6 Ohm; -55°C ~ 150°C; Substitute: BSS138-TP; BSS138-13-F; BSS138LT1G-MS MSKSEMI; BSS138-7-F; BSS138TA; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138-FAI; BSS138P,215; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS1 Anzahl je Verpackung: 3000 Stücke | auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Yangjie Electronic Technology | Trans MOSFET N-CH 50V 0.34A 3-Pin SOT-23 | auf Bestellung 933000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | onsemi / Fairchild | MOSFET SOT-23 N-CH LOGIC | auf Bestellung 834717 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 Produktcode: 197212 | UMW | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/ JHGF: SMD | auf Bestellung 5205 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1758000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | ON-Semicoductor | N-MOSFET 200mA 50V 360mW 3.5? BSS138L BSS138 BSS138TA BSS138LT3G BSS138-YAN BSS138-TP [BSS138LT7G(2.75V,5V)] BSS138LT1G smd TBSS138L Anzahl je Verpackung: 500 Stücke | auf Bestellung 715 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Microdiode Electronics | BSS138 | auf Bestellung 324000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | JUXING | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 350mW; -50°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 JUXING TBSS138 J Anzahl je Verpackung: 500 Stücke | auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Microdiode Electronics | BSS138 | auf Bestellung 138000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | AnBon | N-Channel 50V 220mA 1.6V @ 1mA 3.5? @ 220mA,10V 225mW SOT-23(SOT-23-3) MOSFET BSS138 TBSS138 ANB Anzahl je Verpackung: 100 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1760340 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 36640 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1758000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | SLKOR | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 225mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 SLKOR TBSS138 SL Anzahl je Verpackung: 500 Stücke | auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 9466 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | GALAXY | Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 200mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 GALAXY TB Anzahl je Verpackung: 500 Stücke | auf Bestellung 2600 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 172146 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | Good-Ark | Good-Ark Semiconductor BSS138. Single configuration 50 V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 Produktcode: 144172 | YJ | Transistoren > MOSFET N-CH Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 171000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | UMW | Transistor N-Channel MOSFET; 50V; 50V; 20V; 3,5Ohm; 300mA; 300mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 UMW TBSS1 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | JSMicro Semiconductor | Transistor N-Channel MOSFET; 50V; 20V; 6Ohm; 220mA; 360mW; -55°C ~ 150°C; Equivalent: BSS138P,215; BSS138LT1G; BSS138LT3G; BSS138LT7G; BSS138NH6327XTSA2; BSS138NH6433XTMA1; BSS138-7-F; BSS138-13-F; BSS138TA; BSS138-TP; BSS138 RFG; BSS138 JSMICRO TBSS138 Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138 | AnBon | N-Channel 50V 220mA 1.6V @ 1mA 3.5? @ 220mA,10V 225mW SOT-23(SOT-23-3) MOSFET BSS138 TBSS138 ANB Anzahl je Verpackung: 100 Stücke | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138 | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | Taiwan Semiconductor | MOSFET 50V, 0.26A, Single N-Channel Small-signal MOSFETs | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 | ONSEMI | Description: ONSEMI - BSS138 - Leistungs-MOSFET, n-Kanal, 50 V, 220 mA, 0.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 220mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.3V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 396000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138 Produktcode: 26318 | CET | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 Idd,A: 0.22 Rds(on), Ohm: 03.05.2015 Ciss, pF/Qg, nC: 42/- JHGF: SMD | verfügbar 300 Stück: |
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BSS138 (CJ, SOT-23) Produktcode: 186257 | CJ | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 27/ JHGF: SMD | auf Bestellung 9597 Stück: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138 (Diodes, SOT-23) Produktcode: 125280 | Diodes | Transistoren > MOSFET N-CH Gehäuse: SOT-23 Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 (ON, SOT-23) Produktcode: 161156 | ON | Transistoren > MOSFET N-CH Uds,V: 50 V Idd,A: 0,2 A Rds(on), Ohm: 3,5 Ohm Ciss, pF/Qg, nC: 50/- JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 RFG | Taiwan Semiconductor | MOSFET 50V, 0.26A, Single N-Channel Power MOSFET | auf Bestellung 18204 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 RFG | Taiwan Semiconductor Corporation | Description: 50V, 0.26A, SINGLE N-CHANNEL POW Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 RFG | Taiwan Semiconductor | Trans MOSFET N-CH 50V 0.26A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138 RFG | Taiwan Semiconductor Corporation | Description: 50V, 0.26A, SINGLE N-CHANNEL POW Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 260mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 260mA, 10V Power Dissipation (Max): 357mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 32 pF @ 25 V | auf Bestellung 55245 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138 SOT23 | LGE | Transistor N-MOSFET; 50V; 10V; 3,5Ohm; 220mA; 350mW; -55°C~150°C; BSS138 SOT23 LGE TBSS138 LGE | auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
BSS138(G9-49) | NS | 2000 | auf Bestellung 2520 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138(SS) | FAIRCHILD | 00+ SOT-23 | auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 680000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | DIODES INC. | Description: DIODES INC. - BSS138-13-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9715 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 550000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8060000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 650000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8210000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 280000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8040000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 40000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Incorporated | Description: MOSFET N-CH 50V SOT23 T&R 10K Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 7960000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 640000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | DIODES INC. | Description: DIODES INC. - BSS138-13-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 9715 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 650000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7620000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Incorporated | MOSFET BSS Family | auf Bestellung 772374 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 290000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8060000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 640000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 8820000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 240000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 260000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 7940000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-13P | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13P | Micro Commercial Components | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-13P | Micro Commercial Components | BSS138-13P | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | MOSFET 60V 360mW | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7 | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 357000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1611000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1149000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | DIODES INC. | Description: DIODES INC. - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 494415 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1735 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 2744935 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 20 Stücke | auf Bestellung 1860 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-7-F | Multicomp | BSS138-7-F | auf Bestellung 378000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 525000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Inc | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | DIODES INCORPORATED | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.2A; 0.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.2A Power dissipation: 0.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1149000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | DIODES INC. | Description: DIODES INC. - BSS138-7-F - Leistungs-MOSFET, n-Kanal, 50 V, 200 mA, 1.4 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 494415 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F | Diodes Incorporated | Description: MOSFET N-CH 50V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 2727840 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | Diodes Incorporated | N-кан. MOSFET 50V, 0.2A, 0.225Вт, 3.5Ом, SOT-23 (SMD) | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 1611000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-7-F | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F - MOSFET, N CHANNEL, 50V, 1.4OHM, 200mA, SOT-23-3, FULL REEL tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 0 rohsCompliant: YES Dauer-Drainstrom Id: 0 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 0 euEccn: NLR Verlustleistung: 0 Bauform - Transistor: SOT-23 Anzahl der Pins: 0 Produktpalette: Multicomp Pro Field Effect Transistors N-Channel productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 0 Betriebstemperatur, max.: 0 Drain-Source-Durchgangswiderstand: 0 directShipCharge: 25 | auf Bestellung 408000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-7-F | Diodes Incorporated | MOSFET 300mW 50V DSS | auf Bestellung 477247 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-7-F | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F .K38 | DIODES/ZETEX | N-MOSFET 50V 200mA 3.5mΩ 300mW BSS138-7-F Diodes TBSS138 DIO | auf Bestellung 5705 Stücke: Lieferzeit 7-14 Tag (e) | |||||||||||||||||||
BSS138-7-F-50 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-50 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-50 | Diodes Inc | BSS Family SOT23 T&R 3K | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-52 | Diodes Zetex | Trans MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-52 | Diodes Incorporated | Description: BSS Family SOT23 T&R 3K Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F-79 | Diodes Incorporated | Description: DIODE Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-7-F. | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138-7-F. - MOSFET, N CHANNEL, 50V, 1.4OHM, 200mA, SOT-23-3 tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 50V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 300mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro MOSFET N Channel Transistors productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1.4ohm directShipCharge: 25 SVHC: No SVHC (17-Jan-2023) | auf Bestellung 3274 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-AU-R2-000A1 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-D87Z | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-E6327 | auf Bestellung 828 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138-F085 | ON Semiconductor / Fairchild | MOSFET SINGLE NCH LOG LEVEL FIELD EFFECT XTOR | auf Bestellung 5297 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||||||
BSS138-F085 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | onsemi | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F085 | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F169 | onsemi | Description: 50V N-CHANNEL LOGIC LEVEL ENHANC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 50V 0.34A SOT-23-3L | auf Bestellung 958 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-F2-0000HF | Yangzhou Yangjie Electronic Technology Co.,Ltd | Description: N-CH MOSFET 50V 0.34A SOT-23-3L | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | Comchip Technology | MOSFET 50V 0.22A SOT-23 | auf Bestellung 12135 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | onsemi | Description: FET 50V 3.5 OHM SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 14990 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | Comchip Technology | N-Channel MOSFET | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | ON Semiconductor | N-Channel Logic Level Enhancement Mode Field Effect Transistor | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138-G | ON Semiconductor | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-G | onsemi | MOSFET FET 50V 3.5 OHM | auf Bestellung 854830 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-G | onsemi | Description: FET 50V 3.5 OHM SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-HF | Comchip Technology | MOSFET MOSFET N-CH 50V 0.22A SOT-23 | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-HF | Comchip Technology | Description: MOSFET N-CH 50V 0.22A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 10 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-ML | MOSLEADER | Description: 0.35W 50V 0.22A SOT23 Packaging: Tape & Reel (TR) | auf Bestellung 300000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-NL | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138-R1-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-R2-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-SB9G001 | ON Semiconductor | BSS 138 SOT23 FSC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-T | onsemi | Description: MOSFET N-CH 50V 220MA SOT23-3 Packaging: Bulk Package / Case: 4-XFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: EFCP1313-4CC-037 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 300000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 534000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 89899 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Co | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-TP Produktcode: 189195 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||||||
BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 78000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 1701000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components Corp. | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 BSS138-TP SOT23-3 MCC TBSS138-TP Anzahl je Verpackung: 500 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components (MCC) | MOSFET N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W | auf Bestellung 28601 Stücke: Lieferzeit 108-112 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138-TP | Micro Commercial Co | Description: MOSFET N-CH 50V 220MA SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 1313 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 89899 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | auf Bestellung 534000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138/SS | auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||||||
BSS138; 0,22A; 50V; 0,32W; N-MOSFET; Корпус: SOT-23; MCC | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||||
BSS138A-TP | Micro Commercial Components (MCC) | MOSFET N-Ch Enh FET 50Vds 0.22A 20Vgs 0.35W | auf Bestellung 5870 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | MICRO COMMERCIAL COMPONENTS | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 0.22A; 0.35W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.22A Power dissipation: 0.35W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Power Dissipation (Max): 350mW Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 22.8 pF @ 25 V | auf Bestellung 3170 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138A-TP | Micro Commercial Components Corp. | Transistor N-Channel MOSFET; 50V; 20V; 1,6Ohm; 220mA; 350mW; -55°C~150°C; BSS138A-TP TBSS138A-TP Anzahl je Verpackung: 100 Stücke | auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138A-TP-HF | Micro Commercial Components (MCC) | MOSFET N-Channel Mosfets | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138A-TP-HF | Micro Commercial Components | N-Channel Enhancement Mode Field Effect Transistor | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AHE3-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 620mW (Tj) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5942 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | auf Bestellung 5212 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | auf Bestellung 5212 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components (MCC) | MOSFET 50Vds 20Vgs N-Ch FET | auf Bestellung 5880 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 220mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Power Dissipation (Max): 620mW (Tj) Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 29 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia | MOSFET MOSFET-LOW VOLT SOT23/TO-236AB | auf Bestellung 3000 Stücke: Lieferzeit 52-56 Tag (e) |
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BSS138AK-QR | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | NEXPERIA | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.21 nC @ 10 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AK-QR | Nexperia | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKA/LF1R | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250A Supplier Device Package: TO-236AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKAR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 21516 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | NEXPERIA | Trans MOSFET N-CH 60V 0.2A Automotive 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AKAR | NEXPERIA | Description: NEXPERIA - BSS138AKAR - Leistungs-MOSFET, n-Kanal, 60 V, 200 mA, 2.7 ohm, SOT-23, Oberflächenmontage tariffCode: 85423990 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 360mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 2.7ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2669 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.51nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 4695 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia USA Inc. | Description: MOSFET N-CH 60V 200MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 4.5Ohm @ 100mA, 10V Power Dissipation (Max): 300mW (Ta), 1.06W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250mA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.51 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.125A; 360mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.125A Power dissipation: 0.36W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Gate charge: 0.51nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 4695 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138AKAR | Nexperia | MOSFET BSS138AKA/SOT23/TO-236AB | auf Bestellung 436585 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKAR | Nexperia | Trans MOSFET N-CH 60V 0.2A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 36000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138AKDW-TP | Micro Commercial Components (MCC) | MOSFET Dual NPN SIGNAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 10421 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDW-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22800pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDW-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TPQ2 | Micro Commercial Components (MCC) | MOSFET Dual NPN SIGNAL TRANSISTOR | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDW-TPQ2 | Micro Commercial Co | Description: Interface Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Standard Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Tj) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4700 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKDWHE3-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 320mW (Tj) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 29.5pF @ 25V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Components (MCC) | MOSFET Dual 50Vds 20Vgs N-Ch FET | auf Bestellung 5850 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKDWHE3-TP | Micro Commercial Components | Trans MOSFET N-CH 50V 0.22A 6-Pin SOT-363 T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | Nexperia | MOSFET MOSFET-LOW VOLT SOT363/SC-88 | auf Bestellung 3000 Stücke: Lieferzeit 52-56 Tag (e) |
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BSS138AKS-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKS-QX | Nexperia | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | NEXPERIA | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKS-QX | Nexperia | N-channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKW-QX | Nexperia | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKW-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Cut Tape (CT) | auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138AKW-QX | NEXPERIA | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKW-QX | Nexperia | N-channel Trench MOSFET Automotive AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138AKW-QX | Nexperia | MOSFET MOSFET-LOW VOLT SOT323/SC-70 | auf Bestellung 2900 Stücke: Lieferzeit 52-56 Tag (e) |
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BSS138AKW-QX | Nexperia USA Inc. | Description: MOS DISCRETES Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138B-TP | Micro Commercial Co | Description: MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V Vgs(th) (Max) @ Id: 1.5V @ 1mA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V Power Dissipation (Max): 830mW (Tj) | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138B-TP | Micro Commercial Components (MCC) | MCC | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK | Nexperia | N-канальний ПТ; Udss, В = 60; Id = 360 мА; Ciss, пФ @ Uds, В = 42 @ 10; Qg, нКл = 9,6 @ 4,5 В; Rds = 1 Ом @ 0,35 A, 10 В; Ugs(th) = 1.1 В @ 250 мкА; Опис N-канальний ПТ; Р, Вт = 0,42 Вт; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23-3 | auf Bestellung 118 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK | MULTICOMP PRO | Description: MULTICOMP PRO - BSS138BK - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 350mW Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 57038 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BK | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level | auf Bestellung 42773 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Trans MOSFET N-CH 60V 0.36A Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK,215 | NEXPERIA | Description: NEXPERIA - BSS138BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: true rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 447000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BK,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-236AB Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V Qualification: AEC-Q101 | auf Bestellung 499317 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 22660 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Description: NEXPERIA - BSS138BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 350mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 849093 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BK,215 | NXP | N-MOSFET 60V 360mA 1.6Ω 350mW BSS138BK,215 BSS138BK NXP TBSS138bk Anzahl je Verpackung: 500 Stücke | auf Bestellung 31290 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BK,215 | Nexperia | MOSFET BSS138BK/SOT23/TO-236AB | auf Bestellung 149228 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Description: NEXPERIA - BSS138BK,215 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BK,215 | Nexperia USA Inc. | Description: MOSFET N-CH 60V 360MA TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Rds On (Max) @ Id, Vgs: 1.6Ohm @ 350mA, 10V Power Dissipation (Max): 350mW (Ta), 1.14W (Tc) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: TO-236AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 56 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 495000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Power dissipation: 0.35W Case: SOT23; TO236AB Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 1 Stücke | auf Bestellung 42773 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BK,215 | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 22660 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BK,215 | NEXPERIA | Description: NEXPERIA - BSS138BK,215 - Leistungs-MOSFET, n-Kanal, 60 V, 360 mA, 1 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 360mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 350mW Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 1ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 849093 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BK,215 Produktcode: 131639 | Nexperia | Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 0,36 A Rds(on), Ohm: 1,6 Ohm Ciss, pF/Qg, nC: 42/0,6 JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK-TP | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 30 V | auf Bestellung 3474 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BK-TP | Micro Commercial Components | BSS138BK-TP | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 590mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 30 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BK-TP | Micro Commercial Components | BSS138BK-TP | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BK/DG/B2 | NEXPERIA | 60 V, 360 MA N-CHANNEL TRENCH MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKAHZGT116 | Rohm Semiconductor | Trans MOSFET N-CH 60V 0.4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 2427 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKAHZGT116 | Rohm Semiconductor | Trans MOSFET N-CH 60V 0.4A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKAHZGT116 | Rohm Semiconductor | Description: NCH 60V 400MA, SOT-23, SMALL SIG Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 622 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKAHZGT116 | ROHM Semiconductor | MOSFET 60V N-CHANNEL 400MA AUTOMOTIVE | auf Bestellung 609 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKAHZGT116 | Rohm Semiconductor | Description: NCH 60V 400MA, SOT-23, SMALL SIG Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKDW-TP | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKDW-TP | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 Part Status: Active | auf Bestellung 5605 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKDW-TP | Micro Commercial Components | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKDW-TPQ2 | Micro Commercial Co | Description: MOSFET 2N-CH 50V 0.22A SOT363 Packaging: Bulk Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) Power - Max: 350mW Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 220mA Input Capacitance (Ciss) (Max) @ Vds: 22.8pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.45V @ 250µA Supplier Device Package: SOT-363 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKDW-TPQ2 | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKS | Nexperia | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | NEXPERIA | Description: NEXPERIA - BSS138BKS,115 - Dual-MOSFET, Trench, n-Kanal, 60 V, 60 V, 320 mA, 320 mA, 1 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 320mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 280mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: No Verlustleistung, n-Kanal: 280mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 71970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 135000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | NEXPERIA | Trans MOSFET N-CH 60V 0.32A Automotive 6-Pin TSSOP T/R | auf Bestellung 135000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BKS,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.32A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 426514 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 135000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 8096 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.32W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 2800 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | NEXPERIA | Description: NEXPERIA - BSS138BKS,115 - Dual-MOSFET, Trench, n-Kanal, 60 V, 60 V, 320 mA, 320 mA, 1 ohm tariffCode: 85412100 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 320mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 320mA Drain-Source-Durchgangswiderstand, p-Kanal: 1ohm Verlustleistung, p-Kanal: 280mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Anzahl der Pins: 6Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter Drain-Source-Durchgangswiderstand, n-Kanal: 1ohm productTraceability: No Verlustleistung, n-Kanal: 280mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) | auf Bestellung 71970 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BKS,115 | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | auf Bestellung 8096 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKS,115 | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.32A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 6-TSSOP Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 423000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKS,115 | NEXPERIA | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.21A; 320mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.21A Power dissipation: 0.32W Case: SC88; SOT363; TSSOP6 Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: SMD Gate charge: 0.7nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 2800 Stücke: Lieferzeit 7-14 Tag (e) |
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BSS138BKS,115 | Nexperia | MOSFET BSS138BKS/SOT363/SC-88 | auf Bestellung 430364 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKS/S500X | Rochester Electronics, LLC | Description: BSS138BKS/X - Small Signal Field Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKS/S500X,115 | Nexperia USA Inc. | Description: BSS138BKS - 60V, 320MA DUAL N-CH Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKSH | NEXPERIA | Trans MOSFET N-CH 60V 0.32A Automotive 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKSH | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKSH | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.32A 6TSSOP Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1281 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKSH | Nexperia | MOSFET BSS138BKS/SOT363/SC-88 | auf Bestellung 19412 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKSH | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKSH | Nexperia USA Inc. | Description: MOSFET 2N-CH 60V 0.32A 6TSSOP Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 445mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 320mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 56pF @ 10V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 320mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 6-TSSOP Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKSH | Nexperia | Trans MOSFET N-CH 60V 0.32A Automotive AEC-Q101 6-Pin TSSOP T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKT-TP | Micro Commercial Components (MCC) | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKT-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-523 Packaging: Cut Tape (CT) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 10V Power Dissipation (Max): 270mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 30 V | auf Bestellung 3283 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT-TP | Micro Commercial Co | Description: N-CHANNEL MOSFET,SOT-523 Packaging: Tape & Reel (TR) Package / Case: SOT-523 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340mA Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 10V Power Dissipation (Max): 270mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-523 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 30 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | Rohm Semiconductor | Description: NCH 60V 400MA SMALL SIGNAL MOSFE Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | Rohm Semiconductor | Trans MOSFET N-CH 60V 0.4A 3-Pin SOT-23 T/R | auf Bestellung 9962 Stücke: Lieferzeit 14-21 Tag (e) |
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BSS138BKT116 | ROHM | Description: ROHM - BSS138BKT116 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.49 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Verlustleistung Pd: 350mW Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.49ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.49ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BKT116 | ROHM Semiconductor | MOSFET N CHAN 60V SOT23 | auf Bestellung 19783 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | Rohm Semiconductor | Description: NCH 60V 400MA SMALL SIGNAL MOSFE Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 680mOhm @ 400mA, 10V Power Dissipation (Max): 200mW (Ta) Vgs(th) (Max) @ Id: 2V @ 10µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 47 pF @ 30 V | auf Bestellung 17487 Stücke: Lieferzeit 10-14 Tag (e) |
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BSS138BKT116 | ROHM | Description: ROHM - BSS138BKT116 - Leistungs-MOSFET, n-Kanal, 60 V, 400 mA, 0.49 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 400mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 350mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.49ohm SVHC: Boric acid (14-Jun-2023) | auf Bestellung 940 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||||||
BSS138BKVL | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||||||
BSS138BKVL | Nexperia | Trans MOSFET N-CH 60V 0.36A Automotive AEC-Q101 3-Pin SOT-23 T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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