Produkte > DI5
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| DI514PI | IXYS | 09+ | auf Bestellung 91 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| DI514SIA | IXYS | 09+ | auf Bestellung 297 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| DI5315-02F | Diotec Semiconductor | Description: TVS DIODE 5VWM 21VC DFN1006-3 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI5315-02F | DIOTEC SEMICONDUCTOR | Category: Transil diodes - arrays Description: Diode: TVS array; 6.5÷9V; 3A; 60W; DFN1006-3,SOT883; Ch: 2 Case: DFN1006-3; SOT883 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 60W Breakdown voltage: 6.5...9V Max. forward impulse current: 3A Number of channels: 2 Type of diode: TVS array | Produkt ist nicht verfügbar | |||||||||||||||
| DI5315-02F | DIOTEC SEMICONDUCTOR | Category: Transil diodes - arrays Description: Diode: TVS array; 6.5÷9V; 3A; 60W; DFN1006-3,SOT883; Ch: 2 Case: DFN1006-3; SOT883 Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 5V Features of semiconductor devices: ESD protection Peak pulse power dissipation: 60W Breakdown voltage: 6.5...9V Max. forward impulse current: 3A Number of channels: 2 Type of diode: TVS array Anzahl je Verpackung: 10 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| DI5315-02F | Diotec Semiconductor | ESD Suppressors / TVS Diodes ESD Diode, DFN1006-3, 150C, 60W, Unidir | Produkt ist nicht verfügbar | |||||||||||||||
| DI5A7N65D1K | Diotec Semiconductor | MOSFET, DPAK, N, 650V, 5.7A, 0.43 | Produkt ist nicht verfügbar | |||||||||||||||
| DI5A7N65D1K | Diotec Semiconductor | Description: IC Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Supplier Device Package: TO-252 (DPAK) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V | Produkt ist nicht verfügbar | |||||||||||||||
| DI5A7N65D1K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate | Produkt ist nicht verfügbar | |||||||||||||||
| DI5A7N65D1K | DIOTEC SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 3.6A; Idm: 25A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.6A Pulsed drain current: 25A Power dissipation: 36W Case: DPAK; TO252AA Gate-source voltage: ±30V On-state resistance: 0.43Ω Mounting: SMD Gate charge: 18.4nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| DI5A7N65D1K-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, 650V, 5.7A, 150C, Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI5A7N65D1K-AQ | Diotec Semiconductor | MOSFET MOSFET, DPAK, 650V, 5.7A, 150C, N, AEC-Q101 | auf Bestellung 2437 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI5A7N65D1K-AQ | Diotec Semiconductor | Description: MOSFET, DPAK, 650V, 5.7A, 150C, Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Tc) Rds On (Max) @ Id, Vgs: 430mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 18.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 722 pF @ 325 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DI5M3x18 | VOGT | Category: Metal Spacers Description: Screwed spacer sleeve; 18mm; Int.thread: M3; hexagonal; brass Type of spacer: screwed spacer sleeve Spacer length: 18mm Internal thread: M3 Sleeve shape: hexagonal Material: brass Plating material: nickel Spanner size: 5mm Thread length: 9mm Mechanical elements features: with internal threaded hole on both ends | auf Bestellung 799 Stücke: Lieferzeit 14-21 Tag (e) |
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| DI5M3x18 | VOGT | Category: Metal Spacers Description: Screwed spacer sleeve; 18mm; Int.thread: M3; hexagonal; brass Type of spacer: screwed spacer sleeve Spacer length: 18mm Internal thread: M3 Sleeve shape: hexagonal Material: brass Plating material: nickel Spanner size: 5mm Thread length: 9mm Mechanical elements features: with internal threaded hole on both ends Anzahl je Verpackung: 1 Stücke | auf Bestellung 799 Stücke: Lieferzeit 7-14 Tag (e) |
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