Produkte > ISG

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
ISG0505AXP PowerDescription: DC DC CONVERTER 5V 1W
Produkt ist nicht verfügbar
ISG0505AXP PowerIsolated DC/DC Converters DC-DC, 1W SURFACE MOUNT, REGULATED
Produkt ist nicht verfügbar
ISG0505A-TRXP PowerIsolated DC/DC Converters DC-DC, 1W SURFACE MOUNT, REGULATED
Produkt ist nicht verfügbar
ISG0613N04NM6HATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.07 EUR
10+ 5.09 EUR
25+ 4.8 EUR
100+ 4.12 EUR
250+ 3.89 EUR
500+ 3.66 EUR
1000+ 3.13 EUR
ISG0613N04NM6HSCATMA1Infineon TechnologiesMOSFET TRENCH <= 40V
auf Bestellung 295 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.55 EUR
10+ 5.49 EUR
25+ 5.19 EUR
100+ 4.45 EUR
250+ 4.21 EUR
500+ 3.94 EUR
1000+ 3.4 EUR
ISG0614N06NM5HATMA1Infineon TechnologiesDescription: ISG0614N06NM5HATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-VITFN-10-1
Produkt ist nicht verfügbar
ISG0614N06NM5HATMA1Infineon TechnologiesDescription: ISG0614N06NM5HATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-VITFN-10-1
Produkt ist nicht verfügbar
ISG0614N06NM5HATMA1Infineon TechnologiesSP005575180
Produkt ist nicht verfügbar
ISG0614N06NM5HATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.25 EUR
10+ 5.26 EUR
25+ 4.96 EUR
100+ 4.24 EUR
250+ 4.01 EUR
500+ 3.77 EUR
1000+ 3.22 EUR
ISG0614N06NM5HSCATMA1Infineon TechnologiesDescription: ISG0614N06NM5HSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-WHITFN-10-1
Produkt ist nicht verfügbar
ISG0614N06NM5HSCATMA1Infineon TechnologiesMOSFET TRENCH 40<-<100V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.88 EUR
10+ 5.77 EUR
25+ 5.46 EUR
100+ 4.66 EUR
250+ 4.42 EUR
500+ 4.15 EUR
1000+ 3.56 EUR
ISG0614N06NM5HSCATMA1Infineon TechnologiesDescription: ISG0614N06NM5HSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 233A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 30V
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 102nC @ 10V
Vgs(th) (Max) @ Id: 3.3V @ 86µA
Supplier Device Package: PG-WHITFN-10-1
Produkt ist nicht verfügbar
ISG0616N10NM5HSCInfineon TechnologiesISG0616N10NM5HSC
Produkt ist nicht verfügbar
ISG0616N10NM5HSCATMA1Infineon TechnologiesDescription: ISG0616N10NM5HSCATMA1
Packaging: Cut Tape (CT)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.64 EUR
10+ 6.41 EUR
100+ 5.18 EUR
500+ 4.61 EUR
1000+ 3.94 EUR
Mindestbestellmenge: 3
ISG0616N10NM5HSCATMA1Infineon TechnologiesMOSFET TRENCH >=100V
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.57 EUR
10+ 6.35 EUR
25+ 5.98 EUR
100+ 5.14 EUR
250+ 4.86 EUR
500+ 4.56 EUR
1000+ 3.91 EUR
ISG0616N10NM5HSCATMA1Infineon TechnologiesDescription: ISG0616N10NM5HSCATMA1
Packaging: Tape & Reel (TR)
Package / Case: 10-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 167W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 139A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4800pF @ 50V
Rds On (Max) @ Id, Vgs: 4mOhm @ 50A, 10V
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V
Vgs(th) (Max) @ Id: 3.8V @ 85µA
Supplier Device Package: PG-WHITFN-10-1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.71 EUR
Mindestbestellmenge: 3000
ISG1411IMAGIS BGA 13+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
ISG2B422FP-08
auf Bestellung 576 Stücke:
Lieferzeit 21-28 Tag (e)
ISG4100IMAGIS BGA 13+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
ISG4A442FJ-7A1
auf Bestellung 14 Stücke:
Lieferzeit 21-28 Tag (e)
ISGAL22LV10C-7LJ
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)