Produkte > P8F
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| P8F | Voltronics | Trimmer/Variable Capacitors 0.8 - 8.0pF 500volts | Produkt ist nicht verfügbar | |||||||||||
| P8F28HP2-5600 | Shindengen | MOSFET 280V, 8A EETMOS POWER MOSFET | Produkt ist nicht verfügbar | |||||||||||
| P8F28HP2-5600 | SHINDENGEN | P8F28HP2-5600 THT N channel transistors | auf Bestellung 97 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||
| P8F50HP2-5600 | SHINDENGEN | Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω | auf Bestellung 137 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||
| P8F50HP2-5600 | Shindengen | MOSFET Mosfet | Produkt ist nicht verfügbar | |||||||||||
| P8F50HP2-5600 | SHINDENGEN | Category: THT N channel transistors Description: Transistor: N-MOSFET; Hi-PotMOS2; unipolar; 500V; 8A; Idm: 32A; 65W Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: bulk Gate charge: 15nC Technology: Hi-PotMOS2 Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Mounting: THT Case: FTO-220AG (SC91) Drain-source voltage: 500V Drain current: 8A On-state resistance: 1Ω Anzahl je Verpackung: 1 Stücke | auf Bestellung 137 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||
| P8FE10SB-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||
| P8FE10SB-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; FE (TO252AB similar) Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||
| P8FE10SBK-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||
| P8FE10SBK-5071 | SHINDENGEN | Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 100V; 8A; Idm: 24A; 24W Kind of package: reel; tape Polarisation: unipolar Case: FE (TO252AB similar) Mounting: SMD Gate charge: 16.5nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 24A Drain current: 8A On-state resistance: 99mΩ Type of transistor: N-MOSFET Drain-source voltage: 100V Application: automotive industry Power dissipation: 24W | Produkt ist nicht verfügbar |