Produkte > PJM

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
PJM
auf Bestellung 920 Stücke:
Lieferzeit 21-28 Tag (e)
PJM2301PSA-SPJSEMITransistor P-Channel MOSFET; -20V; 12V; 180mOhm; -2A; 0,7W; -55°C~150°C; Odpowiednik: BSS83PH6327; BSS83PH6327XTSA1; BSS83P; SP000702486; PJM2301PSA-S SOT23 PJSEMI TPJM2301PSA-S PJS
Anzahl je Verpackung: 100 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.15 EUR
Mindestbestellmenge: 200
PJM600PJM03+ DIP8
auf Bestellung 84 Stücke:
Lieferzeit 21-28 Tag (e)
PJM600CD
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMA1000F-12CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 12V 84A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-12Cosel USA, Inc.Description: AC/DC CONVERTER 12V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 85%
Voltage - Output 1: 12V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 84 A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
PJMA1000F-24CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 24V 42A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-24Cosel USA, Inc.Description: AC/DC CONVERTER 24V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 42 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
PJMA1000F-36Cosel USA, Inc.Description: AC/DC CONVERTER 36V 1008W
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 36V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 28 A
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
5+ 621.91 EUR
PJMA1000F-36CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 36V 28A
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-48CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type,1000W 48V 21A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+646.45 EUR
5+ 626.31 EUR
10+ 606.11 EUR
25+ 585.87 EUR
50+ 565.66 EUR
100+ 545.46 EUR
250+ 532.1 EUR
PJMA1000F-48Cosel USA, Inc.Description: AC/DC CONVERTER 48V 1008W
Packaging: Bulk
Power (Watts): 1008W
Features: Adjustable Output, PFC, Universal Input
Size / Dimension: 9.45" L x 5.91" W x 2.40" H (240.0mm x 150.1mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 88%
Voltage - Output 1: 48V
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 21 A
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
1+641.98 EUR
5+ 621.91 EUR
10+ 601.85 EUR
PJMA1500F-12CoselSwitching Power Supplies 1500W 12V 125A Medical, Enclosed
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.37 EUR
250+ 775.35 EUR
PJMA1500F-24CoselSwitching Power Supplies 1536W 24V 64A Medical, Enclosed
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.37 EUR
250+ 775.35 EUR
PJMA1500F-36CoselSwitching Power Supplies 1512W 36V 42A Medical, Enclosed
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.35 EUR
PJMA1500F-48Cosel Europe GmbHPJMA1500F-48
Produkt ist nicht verfügbar
PJMA1500F-48CoselSwitching Power Supplies 1536W 48V 32A Medical, Enclosed
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+912.63 EUR
5+ 883.19 EUR
10+ 853.69 EUR
25+ 824.24 EUR
50+ 794.8 EUR
100+ 775.39 EUR
250+ 775.35 EUR
PJMA300F-24CoselSwitching Power Supplies 300W 24V 12.5A Medical
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+241.33 EUR
5+ 233.89 EUR
10+ 226.46 EUR
20+ 219.03 EUR
50+ 211.6 EUR
100+ 204.18 EUR
200+ 200.46 EUR
PJMA300F-48CoselSwitching Power Supplies 302.4W 48V 6.3A Medical
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
1+238.78 EUR
5+ 234.89 EUR
10+ 219.95 EUR
20+ 216.69 EUR
50+ 209.39 EUR
100+ 202.01 EUR
200+ 198.33 EUR
PJMA600F-12Cosel USA, Inc.Description: AC/DC CONVERTER 12V 600W
Power (Watts): 600W
Features: Adjustable Output, PFC, Universal Input
Packaging: Bulk
Size / Dimension: 8.46" L x 4.72" W x 2.40" H (214.9mm x 119.9mm x 61.0mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -20°C ~ 70°C (With Derating)
Applications: Medical
Approval Agency: CE, cURus, DEMKO
Efficiency: 84%
Voltage - Output 1: 12V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1
Current - Output 1: 50 A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+334.98 EUR
PJMA600F-12CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W, 12V 50A
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
PJMA600F-24Cosel USA, Inc.Description: AC/DC CONVERTER 24V 600W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+349.11 EUR
PJMA600F-24CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 24V 25A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
PJMA600F-36Cosel USA, Inc.Description: AC/DC CONVERTER 36V 601W
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+336.65 EUR
PJMA600F-36CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 36V 16.7A
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
1+301.82 EUR
5+ 292.35 EUR
10+ 282.94 EUR
25+ 273.49 EUR
PJMA600F-48CoselModular Power Supplies AC-DC Medical Power Supply, Enclosed type, 600W 48V 12.5A
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
PJMA600F-48Cosel Europe GmbHAC-DC Power Supplies Medical Type
Produkt ist nicht verfügbar
PJMB050N10NS2_R2_00601PanjitInfineon
Produkt ist nicht verfügbar
PJMB130N65EC-R2PanjitMOSFET TO-263/MOS/TO/NFET-650DCMNH
Produkt ist nicht verfügbar
PJMB130N65EC-T0PanjitMOSFET
Produkt ist nicht verfügbar
PJMB130N65EC_R2_00601PanjitMOSFET 650V 130mohm 29A Easy to driver SJ MOSFET
Produkt ist nicht verfügbar
PJMB210N65EC-R2PanjitMOSFET TO-263/MOS/TO/NFET-650DCMNH
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 34nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMB210N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 790 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
10+ 2.99 EUR
100+ 2.38 EUR
Mindestbestellmenge: 5
PJMB210N65EC_R2_00601PanjitMOSFET 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 663 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.59 EUR
10+ 2.97 EUR
100+ 2.38 EUR
250+ 2.2 EUR
500+ 1.99 EUR
800+ 1.69 EUR
2400+ 1.61 EUR
PJMB210N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
Produkt ist nicht verfügbar
PJMB390N65EC-R2PanjitMOSFET TO-263/MOS/TO/NFET-650DCMNH
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
5+4 EUR
10+ 3.59 EUR
100+ 2.89 EUR
Mindestbestellmenge: 5
PJMB390N65EC_R2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
PJMB390N65EC_R2_00601PanjitMOSFET 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 792 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.59 EUR
10+ 2.97 EUR
100+ 2.38 EUR
250+ 2.2 EUR
500+ 1.99 EUR
800+ 1.69 EUR
2400+ 1.61 EUR
PJMB390N65EC_T0_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
PJMB390N65EC_T0_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Case: TO263
Mounting: SMD
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ12A-AU_R1_007A1PanJit SemiconductorPJMBZ12A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ12A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,8.5V,Uni,2CH
Produkt ist nicht verfügbar
PJMBZ15A-AU_R1_007A1PanJit SemiconductorPJMBZ15A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ15V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15V-AU_R1_000A1PanjitESD Suppressors / TVS Diodes 12V,ESD Protection,SOT-23,UNI
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+ 0.41 EUR
100+ 0.2 EUR
1000+ 0.12 EUR
3000+ 0.1 EUR
9000+ 0.077 EUR
24000+ 0.072 EUR
Mindestbestellmenge: 5
PJMBZ15V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
Mindestbestellmenge: 3000
PJMBZ15V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: Automotive
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 5975 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
43+ 0.42 EUR
100+ 0.2 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 30
PJMBZ15V-AU_R2_000A1PanjitESD Suppressors / TVS Diodes /UL/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ15VD
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15VT/R
auf Bestellung 2800 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ15V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
46+ 0.39 EUR
100+ 0.2 EUR
500+ 0.16 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 33
PJMBZ15V_R1_00001PanjitESD Suppressors / TVS Diodes 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ15V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 80pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 14.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 25W
Power Line Protection: No
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.1 EUR
6000+ 0.095 EUR
Mindestbestellmenge: 3000
PJMBZ15V_R1_10001PanjitESD Suppressors / TVS Diodes UL/TR/7"/RoHS/3K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ15V_R2_00001PanjitESD Suppressors / TVS Diodes /UL/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ15V_R2_10001PanjitESD Suppressors / TVS Diodes 12V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ18A-AU_R1_007A1PanJit SemiconductorPJMBZ18A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ18A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,14.5V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ27A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,22V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 122-126 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ27A-AU_R1_007A1PanJit SemiconductorPJMBZ27A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ27V
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ27V-AU_R1_000A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJMBZ27V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
37+ 0.49 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.14 EUR
Mindestbestellmenge: 28
PJMBZ27V-AU_R1_000A1Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
Mindestbestellmenge: 3000
PJMBZ27V-AU_R1_000A1PanjitZener Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ27V-AU_R1_000A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; SOT23; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Produkt ist nicht verfügbar
PJMBZ27V-AU_R2_000A1PanjitZener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27V-AU_R2_000A1PanJit SemiconductorPJMBZ27V-AU-R2 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ27VC
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ27V_R1_00001PanjitZener Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ27V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Produkt ist nicht verfügbar
PJMBZ27V_R1_00001Panjit International Inc.Description: DUAL TVS ZENER FOR ESD/TRANSIENT
Produkt ist nicht verfügbar
PJMBZ27V_R1_10001PanjitZener Diodes US/TR/7"/RoHS/3K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27V_R2_00001PanjitZener Diodes /US/TR/13"/HF/12K/SOT-23/TVS/ESD/SOT/TEA-02GL/TEA02GL-QI01/PJ///
Produkt ist nicht verfügbar
PJMBZ27V_R2_10001PanjitESD Suppressors / TVS Diodes 22V ESD Protection UNI
Produkt ist nicht verfügbar
PJMBZ33A-AU_R1_007A1Panjit International Inc.Description: ESD,26V, SOT-23,UNI,2CH
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 31.35V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.14 EUR
Mindestbestellmenge: 3000
PJMBZ33A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,26V,Uni,2CH
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ33A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Produkt ist nicht verfügbar
PJMBZ33A-AU_R1_007A1Panjit International Inc.Description: ESD,26V, SOT-23,UNI,2CH
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 870mA
Voltage - Reverse Standoff (Typ): 26V (Max)
Supplier Device Package: SOT-23
Unidirectional Channels: 2
Voltage - Breakdown (Min): 31.35V
Voltage - Clamping (Max) @ Ipp: 46V
Power - Peak Pulse: 40W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
39+ 0.45 EUR
100+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.16 EUR
Mindestbestellmenge: 28
PJMBZ33A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; SOT23
Application: automotive industry
Breakdown voltage: 31.35...34.65V
Leakage current: 50nA
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Peak pulse power dissipation: 40W
Max. off-state voltage: 26V
Semiconductor structure: common anode; double
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ5V6
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ5V6A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,3V,Uni,2CH
auf Bestellung 8997 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.62 EUR
10+ 0.45 EUR
100+ 0.23 EUR
1000+ 0.15 EUR
3000+ 0.14 EUR
9000+ 0.12 EUR
Mindestbestellmenge: 5
PJMBZ5V6A-AU_R1_007A1PanJit SemiconductorPJMBZ5V6A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ6V2
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ6V2A-AU_R1_007A1PanJit SemiconductorPJMBZ6V2A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ6V8
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)
PJMBZ6V8A-AU_R1_007A1PanJit SemiconductorPJMBZ6V8A-AU-R1 Transil diodes - arrays
Produkt ist nicht verfügbar
PJMBZ6V8A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,4.5V,Uni,2CH
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 8.65...9.56V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 6V
Features of semiconductor devices: ESD protection
Leakage current: 0.3µA
Kind of package: reel; tape
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanJit SemiconductorCategory: Transil diodes - arrays
Description: Diode: TVS array; 8.65÷9.56V; 24W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 8.65...9.56V
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 6V
Features of semiconductor devices: ESD protection
Leakage current: 0.3µA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
PJMBZ9V1A-AU_R1_007A1PanjitESD Suppressors / TVS Diodes ESD,6V,Uni,2CH
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD280N60E1_L2_00601PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO252AA
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD360N60EC-L2PanjitMOSFET TO-252AA/MOS/TO/NFET-600SMNH
Produkt ist nicht verfügbar
PJMD360N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD360N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.29 EUR
Mindestbestellmenge: 3000
PJMD360N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD360N60EC_L2_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.68 EUR
10+ 3.92 EUR
25+ 3.71 EUR
100+ 3.19 EUR
250+ 3.01 EUR
500+ 2.83 EUR
1000+ 2.43 EUR
PJMD360N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 5985 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
10+ 3.95 EUR
100+ 3.2 EUR
500+ 2.84 EUR
1000+ 2.43 EUR
Mindestbestellmenge: 4
PJMD390N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.48 EUR
10+ 11.27 EUR
100+ 9.33 EUR
500+ 8.13 EUR
1000+ 7.08 EUR
Mindestbestellmenge: 2
PJMD390N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.84 EUR
Mindestbestellmenge: 3000
PJMD390N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD390N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
PJMD390N65EC_L2_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.68 EUR
10+ 3.92 EUR
25+ 3.71 EUR
100+ 3.19 EUR
250+ 3.01 EUR
500+ 2.83 EUR
1000+ 2.43 EUR
PJMD580N60E1-L2PanjitMOSFET TO-252AA/MOS/TO/NFET-600SMNH
Produkt ist nicht verfügbar
PJMD580N60E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD580N60E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD600N65E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.3A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Produkt ist nicht verfügbar
PJMD600N65E1_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 54W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.3A
On-state resistance: 0.6Ω
Type of transistor: N-MOSFET
Power dissipation: 54W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 21.9A
Drain-source voltage: 650V
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
PJMD900N60EC-L2PanjitMOSFET TO-252AA/MOS/TO/NFET-600SMNH
Produkt ist nicht verfügbar
PJMD900N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 5835 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.24 EUR
10+ 2.68 EUR
100+ 2.14 EUR
500+ 1.81 EUR
1000+ 1.53 EUR
Mindestbestellmenge: 6
PJMD900N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD900N60EC_L2_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.46 EUR
Mindestbestellmenge: 3000
PJMD900N60EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMD900N60EC_L2_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+ 2.46 EUR
100+ 1.97 EUR
250+ 1.81 EUR
500+ 1.65 EUR
1000+ 1.4 EUR
2500+ 1.33 EUR
PJMD990N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMD990N65EC_L2_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: SMD
Case: TO252AA
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
PJMD990N65EC_L2_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2935 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.96 EUR
10+ 2.46 EUR
100+ 1.97 EUR
250+ 1.81 EUR
500+ 1.65 EUR
1000+ 1.4 EUR
2500+ 1.33 EUR
PJMD990N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.36 EUR
10+ 11.15 EUR
100+ 9.23 EUR
500+ 8.04 EUR
1000+ 7 EUR
2000+ 6.76 EUR
Mindestbestellmenge: 2
PJMD990N65EC_L2_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
6000+6.76 EUR
Mindestbestellmenge: 6000
PJMF099N60EC_T0_00601Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.74 EUR
50+ 10.18 EUR
100+ 9.11 EUR
500+ 8.03 EUR
1000+ 7.23 EUR
Mindestbestellmenge: 2
PJMF099N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF099N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF099N60EC_T0_00601PanjitMOSFET 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.83 EUR
10+ 11 EUR
50+ 9.96 EUR
100+ 9.17 EUR
250+ 8.62 EUR
500+ 8.08 EUR
1000+ 7.27 EUR
PJMF120N60EC-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 843 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.88 EUR
10+ 9.31 EUR
25+ 8.45 EUR
100+ 7.78 EUR
250+ 7.32 EUR
500+ 6.86 EUR
1000+ 6.49 EUR
PJMF120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 33W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF120N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.69 EUR
10+ 6.59 EUR
100+ 5.69 EUR
Mindestbestellmenge: 3
PJMF130N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.95 EUR
10+ 9.38 EUR
100+ 7.81 EUR
500+ 6.89 EUR
1000+ 6.2 EUR
Mindestbestellmenge: 2
PJMF130N65EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.88 EUR
10+ 9.31 EUR
25+ 8.45 EUR
100+ 7.78 EUR
250+ 7.32 EUR
500+ 6.86 EUR
1000+ 6.49 EUR
PJMF130N65EC_T0_006A1PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF130N65EC_T0_006A1PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: ITO220AB
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+ 3.96 EUR
25+ 3.75 EUR
100+ 3.2 EUR
250+ 3.03 EUR
500+ 2.85 EUR
1000+ 2.6 EUR
PJMF190N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 60A
Power dissipation: 38W
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF190N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 9.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1931 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+ 3.88 EUR
100+ 3.14 EUR
500+ 2.79 EUR
1000+ 2.39 EUR
Mindestbestellmenge: 4
PJMF190N60E1_T0_00201PanjitMOSFET 600V 190mohm Super Junction Easy versio
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.72 EUR
10+ 3.96 EUR
25+ 3.75 EUR
100+ 3.2 EUR
250+ 3.03 EUR
500+ 2.85 EUR
1000+ 2.6 EUR
PJMF210N65EC-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601PanjitMOSFET 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
250+ 2.18 EUR
500+ 1.99 EUR
1000+ 1.69 EUR
2500+ 1.61 EUR
PJMF210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF210N65EC_T0_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 1979 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
50+ 2.9 EUR
100+ 2.38 EUR
500+ 2.02 EUR
1000+ 1.71 EUR
Mindestbestellmenge: 5
PJMF280N60E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V
auf Bestellung 1968 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.78 EUR
50+ 3.05 EUR
100+ 2.51 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
Mindestbestellmenge: 5
PJMF280N60E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.77 EUR
10+ 3.15 EUR
100+ 2.5 EUR
250+ 2.31 EUR
500+ 2.09 EUR
1000+ 1.9 EUR
2000+ 1.64 EUR
PJMF280N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF280N60E1_T0_00201PanjitMOSFET 600V 280mohm Super Junction Easy versio
auf Bestellung 1983 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.77 EUR
10+ 3.15 EUR
100+ 2.5 EUR
250+ 2.31 EUR
500+ 2.09 EUR
1000+ 1.9 EUR
2000+ 1.64 EUR
PJMF280N65E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF280N65E1_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 4.4A, 10V
Power Dissipation (Max): 35.7W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1040 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.03 EUR
50+ 3.24 EUR
100+ 2.67 EUR
500+ 2.26 EUR
1000+ 1.92 EUR
Mindestbestellmenge: 5
PJMF280N65E1_T0_00201PanjitMOSFET 650V 280mohm Super Junction Easy versio
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.1 EUR
10+ 3.41 EUR
100+ 2.71 EUR
250+ 2.52 EUR
500+ 2.27 EUR
1000+ 2.06 EUR
2000+ 1.8 EUR
PJMF360N60E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00001Panjit International Inc.Description: 600V/ 360MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3.8A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 400 V
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00001PanjitMOSFET 600V/ 360mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF360N60E1_T0_00201PanjitMOSFET 600V/ 360mohm Super Junction Easy versio
Produkt ist nicht verfügbar
PJMF360N60EC-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF360N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1999 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.1 EUR
10+ 4.29 EUR
25+ 4.07 EUR
100+ 3.47 EUR
250+ 3.29 EUR
500+ 3.1 EUR
1000+ 2.82 EUR
PJMF360N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.62 EUR
10+ 6.52 EUR
100+ 5.63 EUR
Mindestbestellmenge: 3
PJMF360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF380N65E1-T0PanjitMOSFET
Produkt ist nicht verfügbar
PJMF380N65E1_T0_00001Panjit International Inc.Description: 650V/ 380MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.6A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 3.2A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 769 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.36 EUR
10+ 2.79 EUR
100+ 2.22 EUR
500+ 1.88 EUR
1000+ 1.59 EUR
Mindestbestellmenge: 6
PJMF380N65E1_T0_00001PanjitMOSFET 650V/ 380mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF380N65E1_T0_00201PanjitMOSFET 650V/ 380mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.41 EUR
10+ 2.85 EUR
100+ 2.25 EUR
250+ 2.09 EUR
500+ 1.9 EUR
1000+ 1.72 EUR
2000+ 1.49 EUR
PJMF390N65EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1900 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.1 EUR
10+ 4.29 EUR
25+ 4.07 EUR
100+ 3.47 EUR
250+ 3.29 EUR
500+ 3.1 EUR
1000+ 2.82 EUR
PJMF390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 29.5W
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 29.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
PJMF390N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 29.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 1893 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.07 EUR
10+ 4.25 EUR
100+ 3.44 EUR
500+ 3.06 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 4
PJMF580N60E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-600FCTMNH
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 28W
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: THT
Gate charge: 15nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF580N60E1_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
auf Bestellung 1966 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.71 EUR
50+ 2.19 EUR
100+ 1.73 EUR
500+ 1.47 EUR
1000+ 1.2 EUR
Mindestbestellmenge: 7
PJMF580N60E1_T0_00201PanjitMOSFET 600V 580mohm Super Junction Easy versio
auf Bestellung 1997 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.69 EUR
10+ 2.22 EUR
100+ 1.74 EUR
500+ 1.46 EUR
1000+ 1.25 EUR
2000+ 1.06 EUR
10000+ 1.05 EUR
Mindestbestellmenge: 2
PJMF600N65E1-T0PanjitMOSFET ITO-220AB-F/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.1A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 554 pF @ 400 V
auf Bestellung 1958 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.73 EUR
10+ 2.27 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.3 EUR
Mindestbestellmenge: 7
PJMF600N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; Idm: 21.9A; 32W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Pulsed drain current: 21.9A
Power dissipation: 32W
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 17nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMF600N65E1_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.8 EUR
10+ 2.32 EUR
100+ 1.85 EUR
250+ 1.7 EUR
500+ 1.55 EUR
1000+ 1.4 EUR
2000+ 1.22 EUR
Mindestbestellmenge: 2
PJMF600N65E1_T0_00201PanjitMOSFET 650V 600mohm Super Junction Easy versio
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.8 EUR
10+ 2.32 EUR
100+ 1.85 EUR
250+ 1.7 EUR
500+ 1.55 EUR
1000+ 1.4 EUR
2000+ 1.22 EUR
Mindestbestellmenge: 2
PJMF900N60E1_T0_00001PanjitMOSFET 600V/ 900mohm Super Junction Easy version Gen.1
Produkt ist nicht verfügbar
PJMF900N60E1_T0_00001Panjit International Inc.Description: 600V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 23.6W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+ 1.76 EUR
100+ 1.37 EUR
500+ 1.16 EUR
1000+ 0.95 EUR
Mindestbestellmenge: 9
PJMF900N60E1_T0_00201PanjitMOSFET 600V/ 900mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.16 EUR
10+ 1.78 EUR
100+ 1.38 EUR
500+ 1.17 EUR
1000+ 1 EUR
2000+ 0.85 EUR
Mindestbestellmenge: 2
PJMF900N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 1986 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.07 EUR
10+ 4.25 EUR
100+ 3.44 EUR
500+ 3.06 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 4
PJMF900N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.43 EUR
10+ 2.87 EUR
100+ 2.27 EUR
250+ 2.09 EUR
500+ 1.92 EUR
1000+ 1.74 EUR
2000+ 1.5 EUR
PJMF900N65E1_T0_00001Panjit International Inc.Description: 650V/ 900MOHM SUPER JUNCTION EAS
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.5A, 10V
Power Dissipation (Max): 25.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 382 pF @ 400 V
auf Bestellung 1965 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.31 EUR
10+ 1.89 EUR
100+ 1.47 EUR
500+ 1.24 EUR
1000+ 1.01 EUR
Mindestbestellmenge: 8
PJMF900N65E1_T0_00201PanjitMOSFET 650V/ 900mohm Super Junction Easy versio
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.32 EUR
10+ 1.92 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.07 EUR
2000+ 0.91 EUR
Mindestbestellmenge: 2
PJMF990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 22.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: THT
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMF990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 22.5W
Polarisation: unipolar
Kind of package: tube
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: THT
Produkt ist nicht verfügbar
PJMF990N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 22.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
10+ 2.9 EUR
100+ 2.31 EUR
500+ 1.95 EUR
1000+ 1.66 EUR
2000+ 1.58 EUR
Mindestbestellmenge: 6
PJMF990N65EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1950 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.43 EUR
10+ 2.87 EUR
100+ 2.27 EUR
250+ 2.09 EUR
500+ 1.92 EUR
1000+ 1.74 EUR
2000+ 1.5 EUR
PJMH040N60EC_T0_00201PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH040N60EC_T0_00201PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Case: TO247-3
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH074N60FRCPanjitMOSFET 600V 74m ohms 53A Fast Recovery Qrr trr Ruggednss
auf Bestellung 1470 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.39 EUR
10+ 11.48 EUR
30+ 10.4 EUR
120+ 9.54 EUR
270+ 8.99 EUR
510+ 8.43 EUR
1020+ 7.59 EUR
PJMH074N60FRC-T0PanjitMOSFET TO-247AD-3LD/NFET-600CTUMNH
Produkt ist nicht verfügbar
PJMH074N60FRCH_T0_00601Panjit International Inc.Description: 600V/ 74M / 53A/ FAST RECOVERY Q
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A
Supplier Device Package: TO-247AD
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
PJMH074N60FRCH_T0_00601PanjitMOSFET 600V 74mohms 53A Fast Recovery Qrr trr Ruggednss
Produkt ist nicht verfügbar
PJMH074N60FRC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH074N60FRC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Pulsed drain current: 117A
Power dissipation: 446W
Gate-source voltage: ±30V
On-state resistance: 74mΩ
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH074N60FRC_T0_00601Panjit International Inc.Description: 600V/ 74MOHM / 53A/ FAST RECOVER
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 26.5A, 10V
Power Dissipation (Max): 446W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3871 pF @ 400 V
auf Bestellung 2984 Stücke:
Lieferzeit 10-14 Tag (e)
PJMH074N60FRC_T0_00601PanjitMOSFET 600V 74mohm 53A Fast Recovery Qrr trr SJ MOSFET
auf Bestellung 1491 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.04 EUR
10+ 11.79 EUR
30+ 10.58 EUR
120+ 9.73 EUR
270+ 9.22 EUR
510+ 8.48 EUR
1020+ 7.37 EUR
PJMH120N60EC-T0PanjitMOSFET TO-247AD-3LD/NFET-600CTUMNH
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601PanjitMOSFET 600V 120mohm 30A Easy to driver SJ MOSFET
auf Bestellung 1487 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.2 EUR
10+ 6.95 EUR
30+ 6.67 EUR
120+ 5.61 EUR
270+ 5.35 EUR
510+ 5 EUR
1020+ 4.28 EUR
PJMH120N60EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMH120N60EC_T0_00601Panjit International Inc.Description: 600V/ 120MOHM / 30A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.25 EUR
10+ 7.41 EUR
30+ 7.01 EUR
120+ 6.07 EUR
270+ 5.76 EUR
510+ 5.17 EUR
1020+ 4.36 EUR
Mindestbestellmenge: 3
PJMH190N60E1_T0_00601PanJit SemiconductorPJMH190N60E1-T0 THT N channel transistors
Produkt ist nicht verfügbar
PJMH190N60E1_T0_00601PanjitMOSFET 600V 190mohm 20.6A Easy to driver SJ MOSFET
auf Bestellung 1497 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.67 EUR
10+ 4.8 EUR
30+ 4.59 EUR
120+ 3.87 EUR
270+ 3.7 EUR
510+ 3.43 EUR
1020+ 2.94 EUR
PJMH190N60E1_T0_00601Panjit International Inc.Description: 600V/ 190MOHM / 20.6A/ EASY TO D
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.6A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 1456 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.39 EUR
10+ 5.74 EUR
25+ 5.43 EUR
100+ 4.7 EUR
250+ 4.46 EUR
500+ 4 EUR
1000+ 3.41 EUR
Mindestbestellmenge: 3
PJMP099N60EC_T0_00601PanjitMOSFET 600V/ 99mOhms / 39A/ Easy to driver SJ MOSFET
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+12.55 EUR
10+ 10.75 EUR
50+ 9.75 EUR
100+ 8.96 EUR
250+ 8.43 EUR
500+ 7.9 EUR
1000+ 7.13 EUR
PJMP099N60EC_T0_00601Panjit International Inc.Description: 600V/ 99M / 39A/ EASY TO DRIVER
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 19.5A, 10V
Power Dissipation (Max): 308W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2568 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.46 EUR
50+ 9.95 EUR
100+ 8.91 EUR
500+ 7.86 EUR
1000+ 7.07 EUR
2000+ 6.63 EUR
Mindestbestellmenge: 2
PJMP120N60EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-600CTMNH
Produkt ist nicht verfügbar
PJMP120N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 12A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 400 V
auf Bestellung 1969 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.82 EUR
10+ 9.28 EUR
100+ 7.73 EUR
500+ 6.82 EUR
1000+ 6.14 EUR
Mindestbestellmenge: 2
PJMP120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP120N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 860 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.75 EUR
10+ 9.22 EUR
25+ 8.36 EUR
100+ 7.69 EUR
250+ 7.23 EUR
500+ 6.78 EUR
1000+ 6.42 EUR
PJMP120N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Pulsed drain current: 69A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP130N65EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-650FCTMNH
Produkt ist nicht verfügbar
PJMP130N65EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.75 EUR
10+ 9.22 EUR
25+ 8.36 EUR
100+ 7.69 EUR
250+ 7.23 EUR
500+ 6.78 EUR
1000+ 6.42 EUR
PJMP130N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 10.8A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1920 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.62 EUR
10+ 6.52 EUR
100+ 5.63 EUR
Mindestbestellmenge: 3
PJMP210N65EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-650CTMNH
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601Panjit International Inc.Description: 650V/ 390MOHM / 10A/ EASY TO DRI
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 9.5A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1412 pF @ 400 V
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.61 EUR
50+ 2.9 EUR
100+ 2.38 EUR
500+ 2.02 EUR
Mindestbestellmenge: 5
PJMP210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 42A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP210N65EC_T0_00601PanjitMOSFET 650V 390mohm 10A Easy to driver SJ MOSFET
auf Bestellung 2973 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.59 EUR
10+ 2.97 EUR
100+ 2.36 EUR
250+ 2.18 EUR
500+ 1.99 EUR
1000+ 1.69 EUR
2500+ 1.61 EUR
PJMP360N60EC-T0PanjitMOSFET TO-220AB-L/MOS/NFET-600CTMNH
Produkt ist nicht verfügbar
PJMP360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJMP360N60EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.98 EUR
10+ 4.19 EUR
25+ 3.94 EUR
100+ 3.4 EUR
250+ 3.19 EUR
500+ 3.01 EUR
1000+ 2.75 EUR
PJMP360N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP360N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCTION MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 400 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.72 EUR
50+ 3.73 EUR
100+ 3.2 EUR
500+ 2.84 EUR
1000+ 2.43 EUR
Mindestbestellmenge: 4
PJMP390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP390N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 87.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 726 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.72 EUR
10+ 5.13 EUR
100+ 4.2 EUR
500+ 3.58 EUR
1000+ 3.02 EUR
Mindestbestellmenge: 4
PJMP390N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO220ABL
Case: TO220ABL
Mounting: THT
Kind of package: tube
Drain-source voltage: 650V
Drain current: 10A
On-state resistance: 390mΩ
Type of transistor: N-MOSFET
Power dissipation: 87.5W
Polarisation: unipolar
Gate charge: 19nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 22A
Produkt ist nicht verfügbar
PJMP390N65EC_T0_00001PanjitMOSFET 22V,ESD Protection,SOT-23,UNI
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.98 EUR
10+ 4.19 EUR
25+ 3.94 EUR
100+ 3.4 EUR
250+ 3.19 EUR
500+ 3.01 EUR
1000+ 2.75 EUR
PJMP900N60EC_T0_00001Panjit International Inc.Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 400 V
auf Bestellung 1998 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.35 EUR
10+ 4.49 EUR
100+ 3.63 EUR
500+ 3.23 EUR
1000+ 2.77 EUR
Mindestbestellmenge: 4
PJMP900N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Mounting: THT
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220ABL
On-state resistance: 0.9Ω
Produkt ist nicht verfügbar
PJMP900N60EC_T0_00001PanjitMOSFET 600V/ 360mohm Super Junction Easy version Gen.1.5
Produkt ist nicht verfügbar
PJMP900N60EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 9.7A; 47.5W; TO220ABL
Mounting: THT
Pulsed drain current: 9.7A
Power dissipation: 47.5W
Gate charge: 8.8nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhanced
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: TO220ABL
On-state resistance: 0.9Ω
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: THT
Case: TO220ABL
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001Panjit International Inc.Description: 650V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Tc)
Rds On (Max) @ Id, Vgs: 990mOhm @ 2A, 10V
Power Dissipation (Max): 47.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB-L
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 306 pF @ 400 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.26 EUR
10+ 2.71 EUR
100+ 2.15 EUR
500+ 1.82 EUR
1000+ 1.55 EUR
2000+ 1.47 EUR
Mindestbestellmenge: 6
PJMP990N65EC_T0_00001PanJit SemiconductorCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 47.5W
Gate charge: 9.7nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 9.5A
Mounting: THT
Case: TO220ABL
Drain-source voltage: 650V
Drain current: 4.7A
On-state resistance: 990mΩ
Type of transistor: N-MOSFET
Power dissipation: 47.5W
Polarisation: unipolar
Kind of package: tube
Produkt ist nicht verfügbar
PJMP990N65EC_T0_00001PanjitMOSFET 650V/ 990mohm Super Junction Easy version Gen.1.5
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.19 EUR
10+ 2.64 EUR
100+ 2.11 EUR
250+ 1.95 EUR
500+ 1.78 EUR
1000+ 1.6 EUR
2000+ 1.39 EUR
PJMQC040N10NS2_R2_00601Panjit International Inc.Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Produkt ist nicht verfügbar
PJMQC040N10NS2_R2_00601PanjitESD Suppressors / TVS Diodes 100V 4.4mohm Excellect low FOM MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 178-182 Tag (e)
1+4.33 EUR
10+ 3.92 EUR
100+ 3.15 EUR
500+ 2.59 EUR
PJMQC040N10NS2_R2_00601Panjit International Inc.Description: 100V/ 4.4MOHM/ EXCELLECT LOW FOM
Produkt ist nicht verfügbar