Produkte > RW4

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
RW4-002PRO SIGNALDescription: PRO SIGNAL - RW4-002 - UHF-Stecker vernickelt Messing RG59U
tariffCode: 85369010
rohsCompliant: YES
Kontaktüberzug: 0
hazardous: false
rohsPhthalatesCompliant: YES
Kontaktmaterial: 0
Steckverbinderausführung: 0
Steckverbindermontage: 0
usEccn: EAR99
euEccn: NLR
Koaxialanschluss: 0
Impedanz: 0
Steckverbindertyp: 0
Produktpalette: 0
Koaxialkabeltypen: 0
productTraceability: No
Frequenz, max.: 0
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
RW4-002 ZINCPRO SIGNALDescription: PRO SIGNAL - RW4-002 ZINC - UHF-Stecker Zink RG59U
tariffCode: 85369010
rohsCompliant: YES
Kontaktüberzug: 0
hazardous: false
rohsPhthalatesCompliant: YES
Kontaktmaterial: 0
Steckverbinderausführung: 0
Steckverbindermontage: 0
usEccn: EAR99
euEccn: NLR
Koaxialanschluss: 0
Impedanz: 0
Steckverbindertyp: 0
Produktpalette: 0
Koaxialkabeltypen: 0
productTraceability: No
Frequenz, max.: 0
SVHC: No SVHC (16-Jan-2020)
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
RW4032AEssentra ComponentsDescription: WASHER FLAT RETAINING #4 NYLON
Produkt ist nicht verfügbar
RW4050AEssentra ComponentsDescription: WASHER FLAT RETAINING #4 NYLON
Produkt ist nicht verfügbar
RW4062AEssentra ComponentsDescription: WASHER FLAT RETAINING #4 NYLON
Produkt ist nicht verfügbar
RW40B17G201D3MDescription: MICRO-KLEAN RW SERIES FILTER CAR
Produkt ist nicht verfügbar
RW4125AEssentra ComponentsDescription: WASHER FLAT RETAINING #4 NYLON
Produkt ist nicht verfügbar
RW437032AEssentra ComponentsDescription: WASHER FLAT RETAINING 7/16 NYLON
Produkt ist nicht verfügbar
RW437062AEssentra ComponentsDescription: WASHER FLAT RETAINING 7/16 NYLON
Produkt ist nicht verfügbar
RW471EUROHM470 Ом 100 ШТ. 0805 5 %
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
RW4C045BCTCL1Rohm SemiconductorDescription: PCH -20V -4.5A POWER MOSFET: RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
auf Bestellung 20630 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
15+ 1.2 EUR
100+ 0.83 EUR
500+ 0.69 EUR
1000+ 0.59 EUR
Mindestbestellmenge: 13
RW4C045BCTCL1ROHM SemiconductorMOSFET MOSFET
auf Bestellung 6215 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.39 EUR
10+ 1.22 EUR
100+ 0.83 EUR
500+ 0.7 EUR
1000+ 0.64 EUR
3000+ 0.55 EUR
6000+ 0.52 EUR
Mindestbestellmenge: 3
RW4C045BCTCL1Rohm SemiconductorDescription: PCH -20V -4.5A POWER MOSFET: RW4
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 460 pF @ 10 V
auf Bestellung 17765 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.52 EUR
6000+ 0.5 EUR
9000+ 0.46 EUR
Mindestbestellmenge: 3000
RW4E045AJTCL1Rohm SemiconductorDescription: NCH 30V 4.5A POWER MOSFET: RW4E0
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Produkt ist nicht verfügbar
RW4E045AJTCL1ROHM SemiconductorMOSFET MOSFET
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.02 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.17 EUR
Mindestbestellmenge: 2
RW4E045AJTCL1Rohm SemiconductorDescription: NCH 30V 4.5A POWER MOSFET: RW4E0
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
auf Bestellung 2484 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.87 EUR
12+ 1.52 EUR
100+ 1.18 EUR
500+ 1 EUR
1000+ 0.82 EUR
Mindestbestellmenge: 10
RW4E045ATTCL1ROHMDescription: ROHM - RW4E045ATTCL1 - Leistungs-MOSFET, p-Kanal, 30 V, 4.5 A, 0.034 ohm, DFN1616, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: DFN1616
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.034ohm
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
RW4E045ATTCL1ROHM SemiconductorMOSFET Pch -30V -4.5A Power MOSFET
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.28 EUR
10+ 1.1 EUR
100+ 0.76 EUR
300+ 0.64 EUR
900+ 0.54 EUR
2400+ 0.48 EUR
4800+ 0.44 EUR
Mindestbestellmenge: 3
RW4E045ATTCL1Rohm SemiconductorDescription: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
Produkt ist nicht verfügbar
RW4E045ATTCL1ROHMDescription: ROHM - RW4E045ATTCL1 - Leistungs-MOSFET, p-Kanal, 30 V, 4.5 A, 0.034 ohm, DFN1616, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: -
usEccn: EAR99
Verlustleistung Pd: 1.5W
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 1.5W
Bauform - Transistor: DFN1616
Qualifizierungsstandard der Automobilindustrie: -
Anzahl der Pins: 7Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: p-Kanal
Kanaltyp: p-Kanal
Betriebswiderstand, Rds(on): 0.034ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: No SVHC (17-Jan-2023)
auf Bestellung 2890 Stücke:
Lieferzeit 14-21 Tag (e)
RW4E045ATTCL1Rohm SemiconductorDescription: PCH -30V -4.5A POWER MOSFET. RW4
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 15 V
auf Bestellung 2940 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
17+ 1.09 EUR
100+ 0.76 EUR
500+ 0.63 EUR
1000+ 0.54 EUR
Mindestbestellmenge: 14
RW4E065GNTCL1Rohm SemiconductorDescription: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
auf Bestellung 2490 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.65 EUR
14+ 1.35 EUR
100+ 1.05 EUR
500+ 0.89 EUR
1000+ 0.73 EUR
Mindestbestellmenge: 11
RW4E065GNTCL1Rohm SemiconductorDescription: NCH 30V 6.5A, HEML1616L7, POWER
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 6.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 15 V
Produkt ist nicht verfügbar
RW4E065GNTCL1ROHM SemiconductorMOSFET Nch 30V 6.5A, HEML1616L7, Power MOSFET.
auf Bestellung 2888 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.69 EUR
10+ 1.37 EUR
100+ 1.07 EUR
500+ 0.91 EUR
1000+ 0.74 EUR
3000+ 0.69 EUR
6000+ 0.66 EUR
Mindestbestellmenge: 2
RW4E075AJTCL1ROHM SemiconductorMOSFET MOSFET
auf Bestellung 5576 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.81 EUR
10+ 1.48 EUR
100+ 1.15 EUR
500+ 0.98 EUR
1000+ 0.89 EUR
3000+ 0.76 EUR
9000+ 0.71 EUR
Mindestbestellmenge: 2
RW4E075AJTCL1Rohm SemiconductorDescription: NCH 30V 7.5A POWER MOSFET: RW4E0
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 2884 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.95 EUR
12+ 1.59 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.86 EUR
Mindestbestellmenge: 10
RW4E075AJTCL1Rohm SemiconductorDescription: NCH 30V 7.5A POWER MOSFET: RW4E0
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 2mA
Supplier Device Package: DFN1616-7T
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Produkt ist nicht verfügbar