Produkte > RZR
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| RZR020P01 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR020P01TL | ROHM Semiconductor | MOSFET 1.5V DRVE PCH MOSFET | auf Bestellung 95712 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZR020P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 2A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V | auf Bestellung 6875 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZR020P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 2A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 105mOhm @ 2A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 6 V | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZR020P01TL | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR025P01 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR025P01 | ROHM Semiconductor | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| RZR025P01TL | ROHM Semiconductor | MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -2.5A | auf Bestellung 3011 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZR025P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 2.5A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V | auf Bestellung 3068 Stücke: Lieferzeit 10-14 Tag (e) |
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| RZR025P01TL | ROHM | Description: ROHM - RZR025P01TL - Leistungs-MOSFET, p-Kanal, 12 V, 2.5 A, 0.044 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12 rohsCompliant: YES Dauer-Drainstrom Id: 2.5 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 1 Gate-Source-Schwellenspannung, max.: 300 euEccn: NLR Verlustleistung: 1 Bauform - Transistor: TSMT Anzahl der Pins: 3 Produktpalette: - productTraceability: No Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.044 Rds(on)-Prüfspannung: 4.5 Betriebstemperatur, max.: 150 Drain-Source-Durchgangswiderstand: 0.044 SVHC: No SVHC (10-Jun-2022) | auf Bestellung 2006 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| RZR025P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 2.5A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 61mOhm @ 2.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||
| RZR025P01TL | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR040P01 | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR040P01FU7TL | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| RZR040P01TL | ROHM Semiconductor | MOSFET Med Pwr, Sw MOSFET P Chan, -12V, -4A | auf Bestellung 1338 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
| RZR040P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 4A TSMT3 Packaging: Tape & Reel (TR) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V | Produkt ist nicht verfügbar | |||||||||||||||
| RZR040P01TL | ROHM | Description: ROHM - RZR040P01TL - Leistungs-MOSFET, p-Kanal, 12 V, 4 A, 0.022 ohm, TSMT, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 300mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TSMT Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm | auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| RZR040P01TL | Rohm Semiconductor | Description: MOSFET P-CH 12V 4A TSMT3 Packaging: Cut Tape (CT) Package / Case: SC-96 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: TSMT3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 6 V | auf Bestellung 1817 Stücke: Lieferzeit 10-14 Tag (e) |
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