Produkte > SUM
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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SUM-T2 | auf Bestellung 1540 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM09MN20-270 | auf Bestellung 7800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM09N20-270 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM09N20-270-E3 | auf Bestellung 486 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM09N20-270-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 9A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM09N20-270-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 9A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM09N20-270-E3 | Vishay | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay | Trans MOSFET N-CH 250V 63.5A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM10250E-GE3 | VISHAY | Description: VISHAY - SUM10250E-GE3 - Leistungs-MOSFET, n-Kanal, 250 V, 63.5 A, 0.0247 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 375 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0247 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM10250E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 36.6A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 36.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 57.6nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 63.5A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay | Trans MOSFET N-CH 250V 63.5A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay | Trans MOSFET N-CH 250V 63.5A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | VISHAY | Description: VISHAY - SUM10250E-GE3 - Leistungs-MOSFET, n-Kanal, 250 V, 63.5 A, 0.0247 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250 rohsCompliant: YES Dauer-Drainstrom Id: 63.5 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 375 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 375 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3 Produktpalette: ThunderFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0247 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0247 SVHC: Lead (10-Jun-2022) | auf Bestellung 2300 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM10250E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 36.6A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 36.6A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 31mΩ Mounting: SMD Gate charge: 57.6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 250V 63.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63.5A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3002 pF @ 125 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM10250E-GE3 | Vishay | Trans MOSFET N-CH 250V 63.5A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM10250E-GE3 | Vishay Semiconductors | MOSFET 250V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 2330 Stücke: Lieferzeit 378-382 Tag (e) |
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SUM110N02-03 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N02-03P | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N03-03 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N03-03P | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N03-03P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P Produktcode: 167466 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||
SUM110N03-04P | Vishay / Siliconix | MOSFET N-CHANNEL 30-V (D-S) 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P | auf Bestellung 2441 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N03-04P-E3 | Vishay | Trans MOSFET N-CH 30V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SUM90N04-3M3P-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N03-04P-T1-E3 | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-02L | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM110N04-2m3L-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-02L | Vishay | Trans MOSFET N-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-02L | auf Bestellung 719 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-02L-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SUM40010EL-GE3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03 | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM110N04-2m7H-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03-E3 | Vishay / Siliconix | MOSFET 40V 110A 437.5W 2.8mohm @ 10V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8250 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03L | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-03L | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM110N04-05H-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03P | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-03P | Vishay / Siliconix | MOSFET OBSOLETE-USE SUM110N04-2M1P-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03P-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-03P-E3 | Vishay / Siliconix | MOSFET OBSOLETE-USE SUM110N04-2M1P-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-04 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-04-E3 | Vishay | Trans MOSFET N-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-04-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-05H-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-05H-E3 | Vishay / Siliconix | MOSFET 40V 110A 150W | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-05H-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-05H-E3 | Vishay | Trans MOSFET N-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M1P-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SUM40010EL-GE3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M1P-E3 | VISHAY | 08+ DO | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM110N04-2M1P-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 29A/110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.13W (Ta), 312W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18800 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M1P-E3 | Vishay | Trans MOSFET N-CH 40V 29A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M1P-E3 | Vishay | Trans MOSFET N-CH 40V 29A 3-Pin(2+Tab) D2PAK | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110N04-2M1P-E3 Produktcode: 164383 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||
SUM110N04-2M1P-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 29A/110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 3.13W (Ta), 312W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 18800 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M3L | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N04-2M3L-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SUM40010EL-GE3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M3L-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M3L-E3 | Vishay | Trans MOSFET N-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N04-2M7H-E3 | Vishay / Siliconix | MOSFET OBSOLETE-USE SUM110N04-2M1P-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05 | auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N05-06L | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N05-06L | Vishay / Siliconix | MOSFET 55V 110A 158W | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05-06L-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-IRFZ48SPBF | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05-06L-E3 | Vishay Siliconix | Description: MOSFET N-CH 55V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05-06L-E3 | Vishay | Trans MOSFET N-CH 55V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05-06L-E3 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N05-06L-T1-E3 | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N05H | auf Bestellung 7800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N06-04L | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) 200 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-04L | auf Bestellung 7800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N06-04L-E3 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) 200 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-05L | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-05L-E3 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S) 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-05L-T1-E3 | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-06 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S), 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-06-E3 | Vishay / Siliconix | MOSFET N-CHANNEL 60-V (D-S), 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M4L | VISHAY | T2BAC | auf Bestellung 270 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM110N06-3M4L-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M4L-E3 | Vishay | Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M4L-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12900 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M4L-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQM120N06-3M5LGE | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M9H-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M9H-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SUM50020EL-GE3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M9H-E3 | Vishay | Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) TO-263AB | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N06-3M9H-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-05 | VISHAY | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110N08-05 | Vishay | Trans MOSFET N-CH 75V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-05-E3 | Vishay | Trans MOSFET N-CH 75V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-07 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N08-07L | auf Bestellung 480 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N08-07L | Vishay | Trans MOSFET N-CH 75V 110A Automotive 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-07P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-07P-E3 | Vishay | Trans MOSFET N-CH 75V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-07P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 208.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-10 | Vishay | Trans MOSFET N-CH 75V 110A Automotive 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-10 | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N08-10-E3 | Vishay | Trans MOSFET N-CH 75V 110A Automotive 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N08-10-E3 | auf Bestellung 600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N10 | VISHAY | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110N10-0 | auf Bestellung 13500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N10-08 | auf Bestellung 33 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110N10-09 | VISHAY | 07+ | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM110N10-09 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 781-SUM110N10-09-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N10-09-E3 | Vishay | Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110N10-09-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110N10-09-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 794 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110N10-09-E3 | Vishay | Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110N10-09-E3 | Vishay / Siliconix | MOSFET 100V 110A 375W | auf Bestellung 3320 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110N10-09-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6700 pF @ 25 V | auf Bestellung 4253 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110N10-09-E3 | Vishay | Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110N10-09-E3 | Vishay | Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110N10-09-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 87A; 375W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 87A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 110nC Kind of channel: enhanced | auf Bestellung 794 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110N1009 | auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110P04-04L | VISHAY | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110P04-04L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-04L-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-04L-E3 | Vishay Semiconductors | MOSFET RECOMMENDED ALT SUM110P04-05-E3 | auf Bestellung 499 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-04L-E3 | Vishay Siliconix | Description: MOSFET P-CH 40V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V | auf Bestellung 16834 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-04L-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-04L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-04L-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 679 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-04L-E3 | Vishay Siliconix | Description: MOSFET P-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 25 V | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-04L-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-05-E3 | Vishay Siliconix | Description: MOSFET P-CH 40V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 15W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V | auf Bestellung 48000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-05-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P04-05-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -33A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 280nC Kind of channel: enhanced | auf Bestellung 775 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -33A; 375W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -33A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 280nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 775 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P04-05-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-05-E3 | VISHAY | Description: VISHAY - SUM110P04-05-E3 - Leistungs-MOSFET, p-Kanal, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0041ohm | auf Bestellung 5633 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P04-05-E3 | Vishay Siliconix | Description: MOSFET P-CH 40V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 15W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11300 pF @ 25 V | auf Bestellung 48786 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-05-E3 | Vishay Siliconix | P-канальний ПТ; Udss, В = 40; Id = 110; Ciss, пФ @ Uds, В = 11300 @ 25; Qg, нКл = 280; Rds = 5 мОм; Ugs(th) = 4 В; Р, Вт = 375; Тексп, °C = -55...+175; Тип монт. = smd; D2PAK | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P04-05-E3 | Vishay | Trans MOSFET P-CH 40V 110A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P04-05-E3 | Vishay Semiconductors | MOSFET 40V 110A 375W | auf Bestellung 19804 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P04-05-E3 | VISHAY | Description: VISHAY - SUM110P04-05-E3 - Leistungs-MOSFET, p-Kanal, 40 V, 110 A, 0.0041 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0041ohm | auf Bestellung 5633 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P06-07L | Vishay Siliconix | P-канальний ПТ; Udss, В = 60; Id = 110 А; Ciss, пФ @ Uds, В = 11400 @ 25; Qg, нКл = 345 @ 10 В; Rds = 6,9 мОм @ 30 A, 10 В; Ugs(th) = 3 В @ 250 мкА; Тексп, °C = -55...+175; D2PAK | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L | Vishay / Siliconix | MOSFET P-CHANNEL 60-V (D-S) 175 DEG.C MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P06-07L | TO-263 | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110P06-07L | Vishay | MOSFET,P CH,60V,110A,D2PAK | auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 20800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 Produktcode: 141393 | Transistoren > Transistoren P-Kanal-Feld | Produkt ist nicht verfügbar | ||||||||||||||||
SUM110P06-07L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V | auf Bestellung 68316 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-07L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -110A; Idm: -240A; 375W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -110A Pulsed drain current: -240A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: SMD Gate charge: 345nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1627 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 | VISHAY | Description: VISHAY - SUM110P06-07L-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 3.75W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0055ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) | auf Bestellung 14523 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 5600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -110A; Idm: -240A; 375W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -110A Pulsed drain current: -240A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 13.8mΩ Mounting: SMD Gate charge: 345nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 1627 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 345 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 25 V | auf Bestellung 67854 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-07L-E3 | Vishay | Transistor P-Channel MOSFET; 60V; 20V; 6,9mOhm; 110A; 375W; -55°C ~ 175°C; SUM110P06-07L TSUM110P06-07l Anzahl je Verpackung: 5 Stücke | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P06-07L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-07L-E3 | Vishay Semiconductors | MOSFET 60V 110A 375W | auf Bestellung 16047 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-07L-E3 | VISHAY | Description: VISHAY - SUM110P06-07L-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 110 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 3.75W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0055ohm | auf Bestellung 27920 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
sum110p06-08l | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM110P06-08L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V | auf Bestellung 3183 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-08L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P06-08L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P06-08L-E3 | VISHAY | Description: VISHAY - SUM110P06-08L-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 110 A, 0.0065 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 272W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 272W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.0065ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0065ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 4507 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P06-08L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P06-08L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET Type of transistor: P-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P06-08L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-08L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P06-08L-E3 | Vishay Semiconductors | MOSFET 60V 110A 272W 8.0mohm @ 10V | auf Bestellung 167331 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P06-08L-E3 | VISHAY | Description: VISHAY - SUM110P06-08L-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 110 A, 0.0065 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: No rohsCompliant: YES Verlustleistung: 272W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0065ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) | auf Bestellung 4507 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P06-08L-E3 | Vishay | Trans MOSFET P-CH 60V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P0608LE3 | VISHAY | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110P08-11-E3 | Vishay Siliconix | Description: MOSFET P-CH 80V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.1mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P08-11L | VISHAY | auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM110P08-11L | VISHAY | 09+ SOP | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Vishay / Siliconix | MOSFET 80V 110A 375W | auf Bestellung 95946 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P08-11L-E3 | Vishay Siliconix | Description: MOSFET P-CH 80V 110A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V | auf Bestellung 46400 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P08-11L-E3 | VISHAY | Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 110A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0093ohm | auf Bestellung 13470 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P08-11L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -110A Pulsed drain current: -120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 0.27µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 796 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 19200 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P08-11L-E3 | Vishay Siliconix | Description: MOSFET P-CH 80V 110A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 11.2mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10850 pF @ 40 V | auf Bestellung 46772 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 7200 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | Vishay | Trans MOSFET P-CH 80V 110A 3-Pin(2+Tab) D2PAK | auf Bestellung 2400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM110P08-11L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -80V; -110A; Idm: -120A; 125W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -110A Pulsed drain current: -120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 11.2mΩ Mounting: SMD Gate charge: 0.27µC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 796 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM110P08-11L-E3 | VISHAY | Description: VISHAY - SUM110P08-11L-E3 - Leistungs-MOSFET, p-Kanal, 80 V, 110 A, 0.0093 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: Y-EX Verlustleistung: 375W Kanaltyp: p-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0093ohm rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) | auf Bestellung 3152 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM11N08-07 | auf Bestellung 7800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM120N04-1M7L-E3 | Vishay | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM120N04-1M7L-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11685 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM120N04-1M7L-GE3 | Vishay | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM1234 | auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM1500RMXL2U | APC by Schneider Electric | UPS - Uninterruptible Power Supplies APC Smart-UPS XL Rackmount/Tower | Produkt ist nicht verfügbar | |||||||||||||||
SUM18N25-165-E3 | Vishay Siliconix | Description: MOSFET N-CH 250V 18A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM18N25-165-E3 | Vishay | Trans MOSFET N-CH 250V 18A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM18N25-165-E3 | Vishay Siliconix | Description: MOSFET N-CH 250V 18A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM23N15-73 | auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM23N15-73-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 23A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM23N15-73-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 23A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM23N15-73-E3 | Vishay | Trans MOSFET N-CH 150V 23A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM25P10-138-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 16.7A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 6A, 10V Power Dissipation (Max): 3.75W (Ta), 88.2W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM25P10-138-E3 | Vishay | Trans MOSFET P-CH 100V 16.7A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM27N20 | auf Bestellung 213 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM27N20-78 | VISHAY | DO-41 | auf Bestellung 4000000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM27N20-78-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 27A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM27N20-78-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 27A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM27N20-78-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 27A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM2891 ISS.1 FAIR | Impcross | SUM2891 ISS.1 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM3000RMXL2U | APC by Schneider Electric | UPS - Uninterruptible Power Supplies APC Smart-UPS XL Rackmount/Tower | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-1 ISS. 14 | Autofour Precision Engineering | SUM3016-1 ISS. 14 | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-1 ISS. 14 FAIR | Autofour Precision Engineering | SUM3016-1 ISS. 14 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-10 ISS. 14 | Autofour Precision Engineering | SUM3016-10 ISS. 14 | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-10 ISS. 14 FAIR | Autofour Precision Engineering | SUM3016-10 ISS. 14 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-2 ISS.14 | Autofour Precision Engineering | SUM3016-2 ISS.14 | Produkt ist nicht verfügbar | |||||||||||||||
SUM3016-2 ISS.14 FAIR | Autofour Precision Engineering | SUM3016-2 ISS.14 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM33N20-60P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 33A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM33N20-60P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 33A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM33N20-60P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 33A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM36N20-54P | auf Bestellung 180 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM36N20-54P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 36A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM36N20-54P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 36A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 15V Power Dissipation (Max): 3.12W (Ta), 166W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM40010EL-GE3 | Vishay | Trans MOSFET N-CH 40V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40010EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V | auf Bestellung 4938 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40010EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A | Produkt ist nicht verfügbar | |||||||||||||||
SUM40010EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 120A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 120A On-state resistance: 1.9mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 230nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM40010EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: D²PAK (TO-263) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11155 pF @ 30 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40010EL-GE3 | Vishay Semiconductors | MOSFET 40V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 3174 Stücke: Lieferzeit 795-799 Tag (e) |
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SUM40012EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 150A On-state resistance: 2.24mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A | Produkt ist nicht verfügbar | |||||||||||||||
SUM40012EL-GE3 | VISHAY | Description: VISHAY - SUM40012EL-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00139 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00139ohm | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM40012EL-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 150A; Idm: 300A Case: TO263 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 150A On-state resistance: 2.24mΩ Type of transistor: N-MOSFET Power dissipation: 150W Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 300A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM40012EL-GE3 | Vishay / Siliconix | MOSFET 40V Vds +/-20V Vgs TO-263 | auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40012EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 150A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.67mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V | auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40012EL-GE3 | VISHAY | Description: VISHAY - SUM40012EL-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 150 A, 0.00139 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 150W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00139ohm | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM40012EL-GE3 | Vishay | Trans MOSFET N-CH 40V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40012EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 150A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.67mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10930 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM40014M-GE3 | Vishay / Siliconix | MOSFET 40V-DUAL N-CHANNEL | auf Bestellung 4617 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40014M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V | auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40014M-GE3 | Vishay | Trans MOSFET N-CH 40V 200A | auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM40014M-GE3 | VISHAY | Description: VISHAY - SUM40014M-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.00082 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: ThunderFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00082ohm | auf Bestellung 2163 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM40014M-GE3 | Vishay | SUM40014M-GE3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM40014M-GE3 | Vishay | Trans MOSFET N-CH 40V 200A | Produkt ist nicht verfügbar | |||||||||||||||
SUM40014M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 200A; Idm: 400A Case: TO263-7 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 200A On-state resistance: 1.36mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A | Produkt ist nicht verfügbar | |||||||||||||||
SUM40014M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 40V 200A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15780 pF @ 20 V | auf Bestellung 6175 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM40014M-GE3 | VISHAY | Description: VISHAY - SUM40014M-GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.00082 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7Pin(s) Produktpalette: ThunderFET productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00082ohm | auf Bestellung 2163 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM40014M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 200A; Idm: 400A Case: TO263-7 Kind of package: reel; tape Mounting: SMD Technology: TrenchFET® Drain-source voltage: 40V Drain current: 200A On-state resistance: 1.36mΩ Type of transistor: N-MOSFET Power dissipation: 375W Polarisation: unipolar Gate charge: 275nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 400A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N02-12P-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 40A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N05-19L-E3 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM40N10-30 | auf Bestellung 31 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM40N10-30-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 40A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N10-30-E3 | auf Bestellung 180 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM40N10-30-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 40A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 15A, 10V Power Dissipation (Max): 3.75W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N10-30-E3 | Vishay | Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N10-30-GE3 | Vishay | Trans MOSFET N-CH 100V 40A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N15-38-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 40A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N15-38-E3 | Vishay | Trans MOSFET N-CH 150V 40A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N15-38-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 40A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM40N15-38-E3 | Vishay / Siliconix | MOSFET 150V 40A 166W 38mohm @ 10V | auf Bestellung 1407 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM4285 ISS.1 FAIR | Impcross | SUM4285 ISS.1 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4293 ISS. 1 FAIR | Impcross | SUM4293 ISS. 1 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4298 ISS. 2 FAIR | Impcross | SUM4298 ISS. 2 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4301-1 ISSUE 1 FAIR | Invotec Group | SUM4301-1 ISSUE 1 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4460 FAIR | London Nameplate Manufacturing | SUM4460 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58 | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM45N25-58 | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM45N25-58-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58 | Vishay | Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay Siliconix | Description: MOSFET N-CH 250V 45A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay | Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay | Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | VISHAY | SUM45N25-58-E3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay | Trans MOSFET N-CH 250V 45A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay Siliconix | Description: MOSFET N-CH 250V 45A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM45N25-58-E3 | Vishay / Siliconix | MOSFET 250V 45A 375W 58mohm @ 10V | auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM45N25-58-E3 | VISHAY | Description: VISHAY - SUM45N25-58-E3 - Leistungs-MOSFET, n-Kanal, 250 V, 45 A, 0.047 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 250V rohsCompliant: YES Dauer-Drainstrom Id: 45A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.047ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 499 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM4685-1 ISS. 3 | Autofour Precision Engineering | SUM4685-1 ISS. 3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM4685-1 ISS. 3 FAIR | Autofour Precision Engineering | SUM4685-1 ISS. 3 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4760-1 ISS.1 | Impcross | Impcross | Produkt ist nicht verfügbar | |||||||||||||||
SUM4760-1 ISS.1 FAIR | Impcross | SUM4760-1 ISS.1 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM4792 | Autofour Precision Engineering | SUM4792 | Produkt ist nicht verfügbar | |||||||||||||||
SUM4792 FAIR | Autofour Precision Engineering | SUM4792 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM47N10 | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM47N10-24L-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 47A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Power Dissipation (Max): 3.75W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM47N10-24L-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 47A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 40A, 10V Power Dissipation (Max): 3.75W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM47N10-24L-E3 | Vishay | Trans MOSFET N-CH 100V 47A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM4810 ISS. 3 FAIR | Impcross | SUM4810 ISS. 3 FAIR | Produkt ist nicht verfügbar | |||||||||||||||
SUM50010E-GE3 | Vishay | Trans MOSFET N-CH 60V 150A 3-Pin(2+Tab) D2PAK | auf Bestellung 749 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM50010E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM50010E-GE3 | Vishay Semiconductors | MOSFET 60V Vds; 20V Vgs TO-263 | auf Bestellung 2202 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM50010E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 150A TO263 Packaging: Strip Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 1.75mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 212 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10895 pF @ 30 V | auf Bestellung 1534 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM50010E-GE3 | Vishay | Trans MOSFET N-CH 60V 150A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM50010E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.2mΩ Mounting: SMD Gate charge: 212nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM50010EL-GE3 | Vishay | MOSFET 60V Vds 150A 375W 175C | auf Bestellung 300 Stücke: Lieferzeit 122-126 Tag (e) |
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SUM50020E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 120A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM50020E-GE3 | Vishay | N-Channel 60 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM50020E-GE3 | VISHAY | SUM50020E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM50020E-GE3 | Vishay Semiconductors | MOSFET 60V Vds TrenchFET TO-263-3 | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM50020E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 120A TO263 | auf Bestellung 57 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM50020EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 120A TO263 | auf Bestellung 1094 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM50020EL-GE3 | VISHAY | SUM50020EL-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM50020EL-GE3 | Vishay / Siliconix | MOSFET 60V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM50020EL-GE3 | Vishay Siliconix | Description: MOSFET N-CH 60V 120A TO263 | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM50020EL-GE3 | Vishay | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM50020EL-GE3 | Vishay | Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM50N03 | auf Bestellung 80 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM50N03-13LC | auf Bestellung 19975 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM50N03-13LC-E3 | Vishay | Trans MOSFET N-CH 30V 50A 5-Pin(4+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM50N03-13LC-E3 | Vishay / Siliconix | MOSFET 30V 50A 83W w/Sense Terminal | Produkt ist nicht verfügbar | |||||||||||||||
SUM50N06-16L-E3 | Vishay | Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM50N06-16L-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 50A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V Power Dissipation (Max): 3.7W (Ta), 93W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1325 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM50P10-42-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 36A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM50UF | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM52N20-39P | Vishay | Trans MOSFET N-CH 200V 52A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM52N20-39P-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 52A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 20A, 15V Power Dissipation (Max): 3.12W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 15V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 185 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM5550A | SUM | 04+ TSSOP-28P | auf Bestellung 169 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM55N03-16P-E3 | auf Bestellung 860 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM55P06-19L | VISHAY | 09+ DIP | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM55P06-19L-E3 | Vishay Siliconix | MOSFET P-CH 60V 55A D2PAK | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM55P06-19L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 55A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM55P06-19L-E3 | Vishay / Siliconix | MOSFET 60V 55A 125W | auf Bestellung 7822 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK SUM55P06-19L-E3 TSUM55P06-19l Anzahl je Verpackung: 10 Stücke | auf Bestellung 205 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM55P06-19L-E3 | VISHAY | Description: VISHAY - SUM55P06-19L-E3 - Leistungs-MOSFET, p-Kanal, 60 V, 55 A, 0.015 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 55A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 125W Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 125W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.015ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.015ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 1484 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM55P06-19L-E3 | Vishay | Trans MOSFET P-CH 60V 55A 3-Pin(2+Tab) D2PAK | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM55P06-19L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -31A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -31A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 115nC Kind of channel: enhanced | auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM55P06-19L-E3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -31A; 125W; D2PAK,TO263 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -31A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 115nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 1013 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM55P06-19L-E3 | Vishay Siliconix | Description: MOSFET P-CH 60V 55A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V | auf Bestellung 2421 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM55P0619L | VISHAY | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM60020E-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 80-V (D-S) MOSFET | auf Bestellung 20757 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60020E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 150A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V | auf Bestellung 2867 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60020E-GE3 | Vishay | Trans MOSFET N-CH 80V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60020E-GE3 | Vishay | Trans MOSFET N-CH 80V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60020E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 150A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10680 pF @ 40 V | auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60020E-GE3 | Vishay | Trans MOSFET N-CH 80V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60020E-GE3 | VISHAY | SUM60020E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM60030E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM60030E-GE3 | Vishay Semiconductors | MOSFET N-Channel 80V (D-S) TrenchFET | auf Bestellung 2223 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60030E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 80V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 141 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7910 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM60061EL-GE3 | Vishay / Siliconix | MOSFET 80V P-CH (D-S) | auf Bestellung 495 Stücke: Lieferzeit 646-650 Tag (e) |
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SUM60061EL-GE3 | VISHAY | SUM60061EL-GE3 SMD P channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM60061EL-GE3 | Vishay Siliconix | Description: P-CHANNEL 80 V (D-S) MOSFET D2PA Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 218 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9600 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N02-3M9P-E3 | Vishay | Trans MOSFET N-CH 20V 60A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N02-3M9P-E3 | Vishay Siliconix | Description: MOSFET N-CH 20V 60A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 5950 pF @ 10 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N02-3M9P-E3 | Vishay / Siliconix | MOSFET 20V 60A 120W 3.9mohm @ 10V | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-05C | auf Bestellung 599 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N04-05LT-E3 | Vishay | Trans MOSFET N-CH 40V 60A 5-Pin(4+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-05T-E3 | Vishay / Siliconix | MOSFET 40V 60A 200W w/Sensing Diode | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-06T | auf Bestellung 6400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N04-06T-E3 | Vishay / Siliconix | MOSFET 40V 60A 200W w/Sensing Diode | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-12 | auf Bestellung 137 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N04-12LT | 09+ | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM60N04-12LT | Vishay / Siliconix | MOSFET 40V 60A 110W | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-12LT | auf Bestellung 5852 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N04-12LT-E3 | Vishay / Siliconix | MOSFET 40V 60A 110W | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N04-12LT-E3 | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N04-1ZLT | auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N0412LT | N/A | auf Bestellung 118 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM60N06-15 | auf Bestellung 155 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N06-15-E3 | Vishay | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N10-17 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60N10-17-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 60A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60N10-17-E3 | Vishay | Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM60N10-17-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 150W Case: TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N10-17-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 60A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 25 V | auf Bestellung 2782 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60N10-17-E3 | Vishay | Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N10-17-E3 | Vishay Semiconductors | MOSFET 100V 60A 150W | auf Bestellung 2837 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM60N10-17-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 60A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 100A Power dissipation: 150W Case: TO263 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 0.1µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM60N10-17-E3 | Vishay | Trans MOSFET N-CH 100V 60A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM60P05 | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60P05-11LT | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM60P05-11LT-E3 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM65N20-30 | VISHAY | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM65N20-30 | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM65N20-30-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM65N20-30-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM65N20-30-E3 | Vishay | Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 65A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM65N20-30-E3 | Vishay | Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM65N20-30-E3 | Vishay | Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM65N20-30-E3 | Vishay | Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK | auf Bestellung 1577 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 65A; Idm: 140A; 375W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 65A Pulsed drain current: 140A Power dissipation: 375W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 130nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM65N20-30-E3 Produktcode: 192327 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
SUM65N20-30-E3 | Vishay Siliconix | Description: MOSFET N-CH 200V 65A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V | auf Bestellung 5169 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM65N20-30-E3 | Vishay | Trans MOSFET N-CH 200V 65A 3-Pin(2+Tab) D2PAK | auf Bestellung 1577 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM65N20-30-E3 | Vishay Semiconductors | MOSFET 200V 65A 375W 30mohm @ 10V | auf Bestellung 6182 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM6600HR | auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM6600HR | SOP-56L | auf Bestellung 999 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUM6K1N | auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM70030E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 150A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V | auf Bestellung 4637 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030E-GE3 | VISHAY | Description: VISHAY - SUM70030E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0024 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm | auf Bestellung 1978 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70030E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.48mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 3-Pin(2+Tab) D2PAK | auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70030E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 150A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.88mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 3-Pin(2+Tab) D2PAK | auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70030E-GE3 | Vishay Semiconductors | MOSFET 100V Vds; 20V Vgs TO-263 | auf Bestellung 1260 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.48mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030E-GE3 | VISHAY | Description: VISHAY - SUM70030E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0024 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0024ohm | auf Bestellung 1978 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70030E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 7-Pin(6+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | Vishay / Siliconix | MOSFET N-CHANNEL 100-V (D-S) MOSFET | auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 150A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V | auf Bestellung 293 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70030M-GE3 | VISHAY | Description: VISHAY - SUM70030M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0029 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100 rohsCompliant: YES Dauer-Drainstrom Id: 150 hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Verlustleistung Pd: 375 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 375 Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 7 Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0029 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0029 SVHC: Lead (10-Jun-2022) | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70030M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 150A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10870 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | Vishay | N-Channel 100 V (D-S) MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 7-Pin(6+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70030M-GE3 | VISHAY | Description: VISHAY - SUM70030M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0029 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 375 Kanaltyp: n-Kanal euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.0029 rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 SVHC: Lead (10-Jun-2022) | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70040E-GE3 | VISHAY | Description: VISHAY - SUM70040E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0032 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0032ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70040E-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK Reel | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040E-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK Reel | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 76nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 789 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM70040E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V | auf Bestellung 954 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70040E-GE3 | VISHAY | Description: VISHAY - SUM70040E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.0032 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0032ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70040E-GE3 | Vishay / Siliconix | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70040E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 125W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 76nC Kind of channel: enhanced | auf Bestellung 789 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70040E-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK Reel | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70040E-GE3-X | Vishay | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 120A TO263-7 Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | VISHAY | Description: VISHAY - SUM70040M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm | auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70040M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 120A TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 50 V | auf Bestellung 787 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70040M-GE3 | VISHAY | Description: VISHAY - SUM70040M-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 120 A, 0.003 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 120A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 7Pins productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.003ohm | auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70040M-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay | Trans MOSFET N-CH 100V 120A 7-Pin(6+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
SUM70040M-GE3 | Vishay Semiconductors | MOSFET 100V Vds 20V Vgs TO-263-7L | auf Bestellung 1046 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70042E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 200A Power dissipation: 278W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042E-GE3 | Vishay Siliconix | Description: N-CHANNEL 100-V (D-S) MOSFET D2P Packaging: Strip Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 20A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6490 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2287 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70042E-GE3 | VISHAY | Description: VISHAY - SUM70042E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0033 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 278W Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0033ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm | auf Bestellung 4677 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70042E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 200A Power dissipation: 278W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A Tube | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042E-GE3 | Vishay | MOSFET N-CHANNEL 100-V (D-S) | auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70042E-GE3 | Vishay | Trans MOSFET N-CH 100V 150A 3-Pin(2+Tab) D2PAK Tube | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042E-GE3 | VISHAY | Description: VISHAY - SUM70042E-GE3 - Leistungs-MOSFET, n-Kanal, 100 V, 150 A, 0.0033 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 150A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 278W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pins Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0033ohm | auf Bestellung 4677 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM70042M | Vishay | SUM70042M | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042M-GE3 | Vishay / Siliconix | MOSFET N-Channel 100 V (D-S) MOSFET PowerPAK SO-8, 2.5 mohm a. 10V 2.3 mohm a. 7.5V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70042M-GE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) MOSFET D2P Packaging: Cut Tape (CT) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V | auf Bestellung 780 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70042M-GE3 | Vishay Siliconix | Description: N-CHANNEL 100 V (D-S) MOSFET D2P Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 3.83mOhm @ 20A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6750 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 131A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 | Vishay | Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 Produktcode: 180235 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
SUM70060E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 131A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 131A (Tc) Rds On (Max) @ Id, Vgs: 5.6mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3330 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70060E-GE3 | Vishay Semiconductors | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 14395 Stücke: Lieferzeit 234-238 Tag (e) |
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SUM70060E-GE3 | Vishay | Trans MOSFET N-CH 100V 131A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | Vishay | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 120A Power dissipation: 125W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 50A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | Vishay Semiconductors | MOSFET 100V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 4704 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM70090E-GE3 | Vishay | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 120A Power dissipation: 125W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | Vishay | Trans MOSFET N-CH 100V 50A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70090E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 100V 50A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | Vishay Siliconix | Description: MOSFET P-CH 100V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | Vishay Siliconix | P-канальний ПТ; Udss, В = 100; Ciss, пФ @ Uds, В = 7000 @ 50; Qg, нКл = 190; Р, Вт = 375; Тексп, °C = -55...+175; TO-263 | auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM70101EL-GE3 | Vishay | Trans MOSFET P-CH 100V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | Vishay Siliconix | Description: MOSFET P-CH 100V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 10.1mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | Vishay | Trans MOSFET P-CH 100V 120A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | VISHAY | Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -100V; -120A; 375W Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -120A Pulsed drain current: -240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Gate charge: 0.19µC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM70101EL-GE3 | Vishay Semiconductors | MOSFET -100V Vds 20V Vgs TO-263 | auf Bestellung 6211 Stücke: Lieferzeit 234-238 Tag (e) |
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SUM70N03-09CP | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM70N03-09CP-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 70A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 93W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70N03-09CP-E3 | Vishay | Trans MOSFET N-CH 30V 70A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70N04-07L | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM70N04-07L-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 70A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM70N04-07L-E3 | Vishay | Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM70N06-11 | auf Bestellung 4080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM70N06-11-E3 | VISHAY | 09+ TO252 | auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
SUM75N04-05L | auf Bestellung 9900 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM75N06-09L | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM75N06-09L | Vishay / Siliconix | MOSFET OBSOLETE - USE SUM75N06-09L-E3 | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N06-09L-E3 | Vishay | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N06-09L-E3 | Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-IRFZ48SPBF | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N06-09L-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N06-09L-T1-E3 | Vishay / Siliconix | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N15-18P-E3 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM75N15-18P-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 75A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM75N15-18P-E3 | Vishay | Trans MOSFET N-CH 150V 75A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM80090E-GE3 | VISHAY | Description: VISHAY - SUM80090E-GE3 - Leistungs-MOSFET, n-Kanal, 150 V, 128 A, 0.0075 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 150V rohsCompliant: YES Dauer-Drainstrom Id: 128A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 375W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0075ohm SVHC: Lead (10-Jun-2022) | auf Bestellung 5128 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM80090E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 128A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V | auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM80090E-GE3 | Vishay | Trans MOSFET N-CH 150V 128A 3-Pin(2+Tab) D2PAK | auf Bestellung 218 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM80090E-GE3 | Vishay / Siliconix | MOSFET 150V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 7410 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM80090E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 128A Pulsed drain current: 240A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM80090E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 128A; Idm: 240A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 128A Pulsed drain current: 240A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM80090E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 150V 128A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 128A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3425 pF @ 75 V | auf Bestellung 2233 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM85N02-05P | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N03-06P | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N03-06P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 85A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N03-06P-E3 | Vishay | Trans MOSFET N-CH 30V 85A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N03-06P-E3 | Vishay | Trans MOSFET N-CH 30V 85A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N03-07P | Vishay | Trans MOSFET N-CH 30V 85A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N03-07P | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N03-07P-E3 | Vishay | Trans MOSFET N-CH 30V 85A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N03-08P | auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N15-19 | auf Bestellung 31200 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N15-19-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N15-19-E3 | auf Bestellung 6400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM85N15-19-E3 | Vishay | Trans MOSFET N-CH 150V 85A Automotive 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N15-19-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 85A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM85N15-19-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 85A; Idm: 180A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 85A Pulsed drain current: 180A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM85N15-19-E3 | Vishay Semiconductors | MOSFET 150V 85A 375W 19mohm @ 10V | auf Bestellung 392 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM85N15-19-E3 | Vishay Siliconix | Description: MOSFET N-CH 150V 85A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4750 pF @ 25 V | auf Bestellung 875 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM865070 | Celduc Inc. | Description: SSR 45A/24-510VAC/VDR/INPUT 3,5- | Produkt ist nicht verfügbar | |||||||||||||||
SUM865070 | CELDUC | Category: One Phase Solid State Relays Description: Relay: solid state; Ucntrl: 3.5÷32VDC; 45A; 24÷510VAC; -55÷100°C Body dimensions: 45x90x98mm Operating temperature: -55...100°C IP rating: IP20 Control voltage: 3.5...32V DC Design: heatsink Switching method: zero voltage switching Switched voltage: 24...510V AC Relay series: SUL Max. operating current: 45A Type of relay: solid state Mounting: for DIN rail mounting Relay variant: 1-phase Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM865070 | CELDUC | Category: One Phase Solid State Relays Description: Relay: solid state; Ucntrl: 3.5÷32VDC; 45A; 24÷510VAC; -55÷100°C Body dimensions: 45x90x98mm Operating temperature: -55...100°C IP rating: IP20 Control voltage: 3.5...32V DC Design: heatsink Switching method: zero voltage switching Switched voltage: 24...510V AC Relay series: SUL Max. operating current: 45A Type of relay: solid state Mounting: for DIN rail mounting Relay variant: 1-phase | Produkt ist nicht verfügbar | |||||||||||||||
SUM867070 | CELDUC | Category: One Phase Solid State Relays Description: Relay: solid state; Ucntrl: 3.5÷32VDC; 45A; 24÷510VAC; -55÷100°C Type of relay: solid state Control voltage: 3.5...32V DC Max. operating current: 45A Switched voltage: 24...510V AC Relay variant: 1-phase Mounting: for DIN rail mounting Operating temperature: -55...100°C Body dimensions: 45x90x98mm Relay series: SUL Switching method: zero voltage switching IP rating: IP20 Design: heatsink | Produkt ist nicht verfügbar | |||||||||||||||
SUM867070 | CELDUC | Category: One Phase Solid State Relays Description: Relay: solid state; Ucntrl: 3.5÷32VDC; 45A; 24÷510VAC; -55÷100°C Type of relay: solid state Control voltage: 3.5...32V DC Max. operating current: 45A Switched voltage: 24...510V AC Relay variant: 1-phase Mounting: for DIN rail mounting Operating temperature: -55...100°C Body dimensions: 45x90x98mm Relay series: SUL Switching method: zero voltage switching IP rating: IP20 Design: heatsink Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90100E-GE3 | VISHAY | SUM90100E-GE3 SMD N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
SUM90100E-GE3 | Vishay Siliconix | Description: N-CHANNEL 200-V (D-S) MOSFET D2P | Produkt ist nicht verfügbar | |||||||||||||||
SUM90140E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 75A On-state resistance: 17mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90140E-GE3 | Vishay | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90140E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 90A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90140E-GE3 | Vishay Semiconductors | MOSFET 200V Vds 20V Vgs D2PAK (TO-263) | auf Bestellung 4496 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM90140E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 75A; 125W; D2PAK,TO263 Case: D2PAK; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Gate charge: 64nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 200V Drain current: 75A On-state resistance: 17mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM90140E-GE3 | Vishay | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM90140E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 90A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90142E-GE3 | Vishay | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM90142E-GE3 | Vishay Semiconductors | MOSFET 200V Vds 20V Vgs TO-263 | auf Bestellung 6983 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90142E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 100 V | auf Bestellung 157 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90142E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM90142E-GE3 | Vishay | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90142E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90142E-GE3 | Vishay | Trans MOSFET N-CH 200V 90A 3-Pin(2+Tab) D2PAK | auf Bestellung 717 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM90142E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 90A; Idm: 240A Case: TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Kind of package: reel; tape Gate charge: 87nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 240A Drain-source voltage: 200V Drain current: 90A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | Vishay | Trans MOSFET N-CH 200V 64A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 64A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 64A Pulsed drain current: 100A Power dissipation: 230W Case: TO263 Gate-source voltage: ±20V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | Vishay Semiconductors | MOSFET 200V Vds 20V Vgs TO-263 | auf Bestellung 3899 Stücke: Lieferzeit 877-881 Tag (e) |
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SUM90220E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 64A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | Vishay | Trans MOSFET N-CH 200V 64A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | Vishay | Trans MOSFET N-CH 200V 64A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90220E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 64A; Idm: 100A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 64A Pulsed drain current: 100A Power dissipation: 230W Case: TO263 Gate-source voltage: ±20V On-state resistance: 23.5mΩ Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM90330E-GE3 | Vishay Semiconductors | MOSFET 200V Vds 20V Vgs TO-263 | auf Bestellung 3141 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90330E-GE3 | Vishay | N-Channel 200 V MOSFET | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM90330E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 35.1A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90330E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
SUM90330E-GE3 | Vishay Siliconix | Description: MOSFET N-CH 200V 35.1A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.1A (Tc) Rds On (Max) @ Id, Vgs: 37.5mOhm @ 12.2A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1172 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90330E-GE3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N03-2M2P | auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM90N03-2M2P-E3 | Vishay | Trans MOSFET N-CH 30V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N03-2M2P-E3 Produktcode: 82556 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
SUM90N03-2M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V | auf Bestellung 1037 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90N03-2M2P-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 200A Power dissipation: 250W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 257nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N03-2M2P-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 90A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 90A Pulsed drain current: 200A Power dissipation: 250W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.7mΩ Mounting: SMD Gate charge: 257nC Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N03-2M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH 30V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 32A, 10V Power Dissipation (Max): 3.75W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 257 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12065 pF @ 15 V | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90N03-2M2P-E3 | Vishay Semiconductors | MOSFET 30V 90A 250W | auf Bestellung 783 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90N04-3M3P-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 90A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N04-3M3P-E3 | Vishay / Siliconix | MOSFET 40 Volts 90 Amps 125 Watts | auf Bestellung 5585 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
SUM90N04-3M3P-E3 | Vishay | Trans MOSFET N-CH 40V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N04-3M3P-E3 | Vishay Siliconix | Description: MOSFET N-CH 40V 90A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N06-4M4P-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N06-4M4P-E3 | Vishay | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N06-4M4P-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6190 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N06-4M4P-E3 | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM90N06-5M5P-E3 | Vishay Siliconix | Description: MOSFET N-CH 60V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N06-5M5P-E3 | Vishay | Trans MOSFET N-CH 60V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-4M8P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-4M8P-E3 | Vishay | Trans MOSFET N-CH 75V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-6M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 90A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-6M2P-E3 | Vishay | Trans MOSFET N-CH 75V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-6MP | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM90N08-7M6P-E3 | Vishay Siliconix | Description: MOSFET N-CH 75V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 30A, 10V Power Dissipation (Max): 3.75W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3528 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N08-7M6P-E3 | Vishay | Trans MOSFET N-CH 75V 90A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90N10-8M2P-E3 | Vishay / Siliconix | MOSFET 100V 90A 300W | auf Bestellung 967 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90N10-8M2P-E3 | Vishay | Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM90N10-8M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 50 V | auf Bestellung 5293 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90N10-8M2P-E3 | VISHAY | Description: VISHAY - SUM90N10-8M2P-E3 - Leistungs-MOSFET, n-Kanal, 100 V, 90 A, 0.0067 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 300W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0067ohm | auf Bestellung 1604 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM90N10-8M2P-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Pulsed drain current: 240A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 647 Stücke: Lieferzeit 14-21 Tag (e) |
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SUM90N10-8M2P-E3 | VISHAY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 90A; Idm: 240A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 90A Pulsed drain current: 240A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 150nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 647 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM90N10-8M2P-E3 | Vishay Siliconix | Description: MOSFET N-CH 100V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.2mOhm @ 20A, 10V Power Dissipation (Max): 3.75W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 50 V | auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90P10-19 | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUM90P10-19-E3 | Vishay Siliconix | Description: MOSFET P-CH 100V 90A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
SUM90P10-19L-E3 | Vishay | Trans MOSFET P-CH 100V 17.2A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90P10-19L-E3 | VISHAY | SUM90P10-19L-E3 SMD P channel transistors | auf Bestellung 727 Stücke: Lieferzeit 7-14 Tag (e) |
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SUM90P10-19L-E3 | VISHAY | Description: VISHAY - SUM90P10-19L-E3 - Leistungs-MOSFET, p-Kanal, 100 V, 90 A, 0.0156 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 375W Anzahl der Pins: 3Pins Produktpalette: - productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0156ohm | auf Bestellung 2858 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM90P10-19L-E3 | Vishay Siliconix | Description: MOSFET P-CH 100V 90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V | auf Bestellung 5969 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90P10-19L-E3 | Vishay | Trans MOSFET P-CH 100V 17.2A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
SUM90P10-19L-E3 | Vishay Semiconductors | MOSFET 100V 90A 375W 19mohm @ 10V | auf Bestellung 8393 Stücke: Lieferzeit 10-14 Tag (e) |
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SUM90P10-19L-E3 | Vishay | Trans MOSFET P-CH 100V 17.2A 3-Pin(2+Tab) D2PAK | auf Bestellung 4800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
SUM90P10-19L-E3 | Vishay Siliconix | Description: MOSFET P-CH 100V 90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 13.6W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 326 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 50 V | auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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SUMIL25 | auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUMMA01 | auf Bestellung 2669 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
SUMMARY DATA P/L 59 | Kyocera AVX | Kyocera AVX Components | Produkt ist nicht verfügbar | |||||||||||||||
SUMMERREV1.1 | CARRY | auf Bestellung 226 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUMMESPBL35 | DELTA PLUS | DEL-SUMMESPBL35 Leg protection | auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL36 | DELTA PLUS | DEL-SUMMESPBL36 Leg protection | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL37 | DELTA PLUS | DEL-SUMMESPBL37 Leg protection | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL38 | DELTA PLUS | DEL-SUMMESPBL38 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL39 | DELTA PLUS | DEL-SUMMESPBL39 Leg protection | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL40 | DELTA PLUS | Category: Leg protection Description: Shoes; Size: 40; yellow-blue; cotton,polyester; with metal toecap Type of OSH component: shoes Size: 40 Colour: yellow-blue Material: cotton; polyester Conform to the norm: CE; EN ISO 20344:2011; EN ISO 20345:2011 Resistance to: cutting; impact; perforation; slip Version: with metal toecap Manufacturer series: SUMMER S1P SRC Application of OSH: craftman; light industry; logistics; second work; services | auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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SUMMESPBL40 | DELTA PLUS | Category: Leg protection Description: Shoes; Size: 40; yellow-blue; cotton,polyester; with metal toecap Type of OSH component: shoes Size: 40 Colour: yellow-blue Material: cotton; polyester Conform to the norm: CE; EN ISO 20344:2011; EN ISO 20345:2011 Resistance to: cutting; impact; perforation; slip Version: with metal toecap Manufacturer series: SUMMER S1P SRC Application of OSH: craftman; light industry; logistics; second work; services Anzahl je Verpackung: 1 Stücke | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL41 | DELTA PLUS | DEL-SUMMESPBL41 Leg protection | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL42 | DELTA PLUS | DEL-SUMMESPBL42 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL43 | DELTA PLUS | DEL-SUMMESPBL43 Leg protection | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPBL44 | DELTA PLUS | DEL-SUMMESPBL44 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL45 | DELTA PLUS | DEL-SUMMESPBL45 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL46 | DELTA PLUS | DEL-SUMMESPBL46 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL47 | DELTA PLUS | DEL-SUMMESPBL47 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPBL48 | DELTA PLUS | DEL-SUMMESPBL48 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR35 | DELTA PLUS | DEL-SUMMESPGR35 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR36 | DELTA PLUS | DEL-SUMMESPGR36 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR37 | DELTA PLUS | DEL-SUMMESPGR37 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR38 | DELTA PLUS | DEL-SUMMESPGR38 Leg protection | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR39 | DELTA PLUS | DEL-SUMMESPGR39 Leg protection | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR40 | DELTA PLUS | DEL-SUMMESPGR40 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR41 | DELTA PLUS | DEL-SUMMESPGR41 Leg protection | auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR42 | DELTA PLUS | Category: Leg protection Description: Shoes; Size: 42; grey-orange; cotton,polyester; with metal toecap Conform to the norm: CE; EN ISO 20344:2011; EN ISO 20345:2011 Manufacturer series: SUMMER S1P SRC Resistance to: cutting; impact; perforation; slip Colour: grey-orange Material: cotton; polyester Type of OSH component: shoes Size: 42 Version: with metal toecap Application of OSH: craftman; light industry; logistics; second work; services | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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SUMMESPGR42 | DELTA PLUS | Category: Leg protection Description: Shoes; Size: 42; grey-orange; cotton,polyester; with metal toecap Conform to the norm: CE; EN ISO 20344:2011; EN ISO 20345:2011 Manufacturer series: SUMMER S1P SRC Resistance to: cutting; impact; perforation; slip Colour: grey-orange Material: cotton; polyester Type of OSH component: shoes Size: 42 Version: with metal toecap Application of OSH: craftman; light industry; logistics; second work; services Anzahl je Verpackung: 1 Stücke | auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR43 | DELTA PLUS | DEL-SUMMESPGR43 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR44 | DELTA PLUS | DEL-SUMMESPGR44 Leg protection | auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR45 | DELTA PLUS | DEL-SUMMESPGR45 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR46 | DELTA PLUS | DEL-SUMMESPGR46 Leg protection | auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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SUMMESPGR47 | DELTA PLUS | DEL-SUMMESPGR47 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMESPGR48 | DELTA PLUS | DEL-SUMMESPGR48 Leg protection | Produkt ist nicht verfügbar | |||||||||||||||
SUMMITS93X6XS02 | N/A | auf Bestellung 429 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUMMITS93X6XS03 | N/A | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUMMITSMS24S06 | N/A | auf Bestellung 590 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUMMITSMS24S09 | N/A | auf Bestellung 423 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
SUMMITSMS24VPS06 | N/A | auf Bestellung 76 Stücke: Lieferzeit 21-28 Tag (e) |