Produkte > WND
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
WND08P16DJ | WeEn Semiconductors | Description: DIODE GEN PURP 1.6KV 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V | auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND08P16DJ | WeEn Semiconductors | WND08P16DJ SMD universal diodes | auf Bestellung 1373 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
WND08P16DJ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND08P16D/TO252/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
WND08P16DJ | WeEn Semiconductors | Description: DIODE GEN PURP 1.6KV 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V | auf Bestellung 24808 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND08P16DJ | Ween | WND08P16D/TO252/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
WND08P16XQ | WeEn Semiconductors | Description: DIODE GEN PURP 1.6KV 8A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V | Produkt ist nicht verfügbar | |||||||||||||||
WND08P16XQ | Ween | WND08P16X/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND08P16XQ | WeEn Semiconductors | WND08P16XQ THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||
WND08P16XQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode | Produkt ist nicht verfügbar | |||||||||||||||
WND100FET | Ohmite | Description: RES 100 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 Ohms | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND100FET | Ohmite | Wirewound Resistors - Through Hole 3W 100 ohm 1% | auf Bestellung 377 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND100FET | Ohmite | Description: RES 100 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 Ohms | auf Bestellung 1441 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND10M600XQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND10M600X/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND10M600XQ | WeEn Semiconductors | Description: WND10M600X/TO-220F/STANDARD MARK Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 980 mV @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||
WND10M600XQ | WeEn Semiconductors | WND10M600XQ THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||
WND10P08XQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode | Produkt ist nicht verfügbar | |||||||||||||||
WND10P08XQ | WeEn Semiconductors | Description: DIODE GEN PURP 800V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | auf Bestellung 1632 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND10P08XQ | WeEn Semiconductors | WND10P08XQ THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||
WND10P08YQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND10P08Y/IITO220-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND10P08YQ | WeEn Semiconductors | Description: DIODE GP 800V 10A IITO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: IITO-220-2 Operating Temperature - Junction: 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V | auf Bestellung 5978 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND10RFET | Ohmite | Description: RES 10 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 10 Ohms | auf Bestellung 3500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND10RFET | Ohmite | Wirewound Resistors - Through Hole 3W 10 ohm 1% | auf Bestellung 2998 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND10RFET | Ohmite | Description: RES 10 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 10 Ohms | auf Bestellung 3611 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND15RFET | Ohmite | Wirewound Resistors - Through Hole 3W 15 ohm 1% | auf Bestellung 282 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND15RFET | Ohmite | Description: RES 15 OHM 3W 1% AXIAL | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND15RFET | Ohmite | Description: RES 15 OHM 3W 1% AXIAL | Produkt ist nicht verfügbar | |||||||||||||||
WND1K0FET | Ohmite | Description: RES 1K OHM 3W 1% AXIAL | Produkt ist nicht verfügbar | |||||||||||||||
WND1K0FET | Ohmite | Description: RES 1K OHM 3W 1% AXIAL | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND1K0FET | Ohmite | Wirewound Resistors - Through Hole 3W 1K ohm 1% | auf Bestellung 940 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND1R0FET | Ohmite | Description: RES 1 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 1 Ohms | auf Bestellung 3042 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND1R0FET | Ohmite | Wirewound Resistors - Through Hole 3W 1 ohm 1% | auf Bestellung 1087 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND1R0FET | Ohmite | Description: RES 1 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 1 Ohms | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND250FET | Ohmite | Description: RES 250 OHM 3W 1% AXIAL | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND250FET | Ohmite | Wirewound Resistors - Through Hole 3W 250 ohm 1% | auf Bestellung 993 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND250FET | Ohmite | Description: RES 250 OHM 3W 1% AXIAL | Produkt ist nicht verfügbar | |||||||||||||||
WND2K5FET | Ohmite | Description: RES 2.5K OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 2.5 kOhms | auf Bestellung 2650 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND2K5FET | Ohmite | Description: RES 2.5K OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±20ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 2.5 kOhms | auf Bestellung 3195 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND2K5FET | Ohmite | Wirewound Resistors - Through Hole 3W 2.5K ohm 1% | auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND35P08Q | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND35P08/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08Q | WeEn Semiconductors | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD59; TO220AC Max. forward voltage: 1.35V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08Q | WeEn Semiconductors | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; SOD59,TO220AC Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD59; TO220AC Max. forward voltage: 1.35V | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08Q | WeEn Semiconductors | Description: WND35P08/TO-220AC/STANDARD MARKI Packaging: Bulk Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A Current - Reverse Leakage @ Vr: 50 µA @ 600 V | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08XQ | WeEn Semiconductors | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD113; TO220FP-2 Max. forward voltage: 1.35V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08XQ | WeEn Semiconductors | Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 35A; tube; Ifsm: 400A; Ufmax: 1.35V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 35A Semiconductor structure: single diode Kind of package: tube Max. forward impulse current: 0.4kA Case: SOD113; TO220FP-2 Max. forward voltage: 1.35V | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08XQ | WeEn Semiconductors | Description: WND35P08X/TO-220F/STANDARD MARKI Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: TO-220F Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08XQ | Ween | WND35P08X/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND35P08XQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND35P08X/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND35P12BJ | WeEn Semiconductors | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 35A; D2PAK,SOT404; Ufmax: 1.35V Mounting: SMD Max. forward voltage: 1.35V Max. off-state voltage: 1.2kV Load current: 35A Kind of package: reel; tape Semiconductor structure: single diode Case: D2PAK; SOT404 Type of diode: rectifying Max. forward impulse current: 0.4kA | Produkt ist nicht verfügbar | |||||||||||||||
WND35P12BJ | WeEn Semiconductors | Description: DIODE GEN PURP 1.2KV 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND35P12BJ | Ween | WND35P12B/TO263/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
WND35P12BJ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND35P12B/TO263/REEL 13" Q1/T1 *STANDARD MARK SMD | auf Bestellung 4778 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND35P12BJ | WeEn Semiconductors | Category: SMD universal diodes Description: Diode: rectifying; SMD; 1.2kV; 35A; D2PAK,SOT404; Ufmax: 1.35V Mounting: SMD Max. forward voltage: 1.35V Max. off-state voltage: 1.2kV Load current: 35A Kind of package: reel; tape Semiconductor structure: single diode Case: D2PAK; SOT404 Type of diode: rectifying Max. forward impulse current: 0.4kA Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
WND35P12BJ | WeEn Semiconductors | Description: DIODE GEN PURP 1.2KV 35A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: D2PAK Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 35 A Current - Reverse Leakage @ Vr: 50 µA @ 1200 V | auf Bestellung 7152 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND45P16WQ | Ween | Standard Reverse Recovery Power Diode in TO247-2L Package | Produkt ist nicht verfügbar | |||||||||||||||
WND45P16WQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching WND45P16W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND45P16WQ | WeEn Semiconductors | WND45P16WQ THT universal diodes | auf Bestellung 581 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
WND45P16WQ | WeEn Semiconductors | Description: DIODE GEN PURP 1.6KV 45A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 45A Supplier Device Package: TO-247-2 Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 45 A Current - Reverse Leakage @ Vr: 10 µA @ 1600 V | auf Bestellung 1056 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND4863MTE | auf Bestellung 36 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
WND560FET | Ohmite | Description: RES 560 OHM 3W 1% AXIAL | auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) | |||||||||||||||
WND560FET | Ohmite | Wirewound Resistors - Through Hole 3W 560 ohm 1% | auf Bestellung 220 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND560FET | Ohmite | Description: RES 560 OHM 3W 1% AXIAL | Produkt ist nicht verfügbar | |||||||||||||||
WND5R0FET | Ohmite | Description: RES 5 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 5 Ohms | auf Bestellung 30340 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND5R0FET | Ohmite | Wirewound Resistors - Through Hole 3W 5 ohm 1% | auf Bestellung 1230 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND5R0FET | Ohmite | Description: RES 5 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±50ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 5 Ohms | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND60P1600WQ | Ween | WND60P1600WQ - Package Type: TO247-2L | Produkt ist nicht verfügbar | |||||||||||||||
WND60P16WQ | Ween | WND60P16W/TO247-2L/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
WND60P16WQ | WeEn Semiconductors | Description: DIODE GEN PURP 1.6KV 60A TO247-2 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 60A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 60 A Current - Reverse Leakage @ Vr: 50 µA @ 1600 V | auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WND60P16WQ | WeEn Semiconductors | WND60P16WQ THT universal diodes | Produkt ist nicht verfügbar | |||||||||||||||
WND60P16WQ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching Standard reverse recovery pwr diode | Produkt ist nicht verfügbar | |||||||||||||||
WNDR10FET | Ohmite | Description: RES 0.1 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±90ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 mOhms | Produkt ist nicht verfügbar | |||||||||||||||
WNDR10FET | Ohmite | Wirewound Resistors - Through Hole 3W 0.1 ohm 1% | auf Bestellung 999 Stücke: Lieferzeit 223-227 Tag (e) |
| ||||||||||||||
WNDR10FET | Ohmite | Description: RES 0.1 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±90ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Part Status: Active Resistance: 100 mOhms | Produkt ist nicht verfügbar | |||||||||||||||
WNDR50FET | Ohmite | Description: RES 0.5 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Cut Tape (CT) Package / Case: Axial Temperature Coefficient: ±90ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 500 mOhms | auf Bestellung 3356 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WNDR50FET | Ohmite | Wirewound Resistors - Through Hole 3W 0.5 ohm 1% | auf Bestellung 497 Stücke: Lieferzeit 10-14 Tag (e) |
| ||||||||||||||
WNDR50FET | Ohmite | Description: RES 0.5 OHM 1% 3W AXIAL Power (Watts): 3W Tolerance: ±1% Features: Non-Inductive Packaging: Tape & Reel (TR) Package / Case: Axial Temperature Coefficient: ±90ppm/°C Size / Dimension: 0.217" Dia x 0.533" L (5.50mm x 13.54mm) Composition: Wirewound Operating Temperature: -55°C ~ 150°C Number of Terminations: 2 Supplier Device Package: Axial Resistance: 500 mOhms | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
|