2ED020I06-FI

2ED020I06-FI Infineon Technologies


Infineon_2ED020I06_FI_DS_v02_00_EN-1125647.pdf Hersteller: Infineon Technologies
Gate Drivers 650V Isolated HB,2A Comparator & OPAMP
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.79 EUR
10+ 4.29 EUR
100+ 3.52 EUR
250+ 3.34 EUR
500+ 2.99 EUR
1000+ 2.5 EUR
2000+ 2.39 EUR
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Technische Details 2ED020I06-FI Infineon Technologies

Description: HALF-BRIDGE PERIPHERAL DRIVER, Packaging: Bulk, Package / Case: 18-SOIC (0.295", 7.50mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TJ), Voltage - Supply: 14V ~ 18V, Input Type: Inverting, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-18-2, Rise / Fall Time (Typ): 20ns, 20ns, Channel Type: Independent, Driven Configuration: High-Side and Low-Side, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 0.8V, 2V, Current - Peak Output (Source, Sink): 1A, 2A, Part Status: Active, DigiKey Programmable: Not Verified.

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2ED020I06FI 2ED020I06FI Hersteller : Infineon Technologies INFN-S-A0001299747-1.pdf?t.download=true&u=5oefqw Description: HALF-BRIDGE PERIPHERAL DRIVER
Packaging: Bulk
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 14V ~ 18V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 650 V
Supplier Device Package: PG-DSO-18-2
Rise / Fall Time (Typ): 20ns, 20ns
Channel Type: Independent
Driven Configuration: High-Side and Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 1A, 2A
Part Status: Active
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar