Technische Details BCR129S E6327 INFINEON
Description: BIPOLAR DIGITAL TRANSISTOR, Packaging: Bulk, Package / Case: 6-VSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Transistor Type: 2 PNP - Pre-Biased (Dual), Power - Max: 250mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V, Frequency - Transition: 150MHz, Resistor - Base (R1): 10kOhms, Supplier Device Package: PG-SOT363-PO, Part Status: Active.
Weitere Produktangebote BCR129S E6327
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BCR129SE6327 | Hersteller : ROCHESTER ELECTRONICS |
 Description: ROCHESTER ELECTRONICS - BCR129SE6327 - BCR129 - DIGITAL TRANSISTORtariffCode: 85412100 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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BCR129SE6327 | Hersteller : Infineon Technologies |
Trans Digital BJT NPN 50V 100mA Automotive 6-Pin SOT-363 T/R |
Produkt ist nicht verfügbar |
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BCR129SE6327 | Hersteller : Infineon Technologies |
Description: BIPOLAR DIGITAL TRANSISTOR Packaging: Bulk Package / Case: 6-VSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 5V Frequency - Transition: 150MHz Resistor - Base (R1): 10kOhms Supplier Device Package: PG-SOT363-PO Part Status: Active |
Produkt ist nicht verfügbar |
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| BCR 129S E6327 | Hersteller : Infineon Technologies |
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR |
Produkt ist nicht verfügbar |