G2K3N10L6 Goford Semiconductor
Hersteller: Goford SemiconductorDescription: MOSFET 2N-CH 100V 3A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6L
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.67W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V
Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
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Technische Details G2K3N10L6 Goford Semiconductor
Description: MOSFET 2N-CH 100V 3A SOT23-6L, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Supplier Device Package: SOT-23-6L, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.67W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 536pF @ 50V, Rds On (Max) @ Id, Vgs: 220mOhm @ 2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, FET Feature: Standard, Vgs(th) (Max) @ Id: 2.2V @ 250µA.