ND171N18KHPSA2 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 1.8KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
Description: DIODE GEN PURP 1.8KV 171A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 171A
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 239.99 EUR |
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Technische Details ND171N18KHPSA2 Infineon Technologies
Description: DIODE GEN PURP 1.8KV 171A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 171A, Operating Temperature - Junction: 150°C, Voltage - DC Reverse (Vr) (Max): 1800 V, Voltage - Forward (Vf) (Max) @ If: 1.26 V @ 500 A, Current - Reverse Leakage @ Vr: 20 mA @ 1800 V.