RX3P12BATC16 Rohm Semiconductor
Hersteller: Rohm SemiconductorDescription: PCH -100V -120A POWER MOSFET: RX
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V
Power Dissipation (Max): 201W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 10.68 EUR |
| 50+ | 8.53 EUR |
| 100+ | 7.63 EUR |
| 500+ | 6.73 EUR |
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Technische Details RX3P12BATC16 Rohm Semiconductor
Description: PCH -100V -120A POWER MOSFET: RX, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 12.3mOhm @ 60A, 10V, Power Dissipation (Max): 201W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 385 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16600 pF @ 50 V.