SIDC16D60SIC3 Infineon Technologies

Description: DIODE SIL CARB 600V 5A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 170pF @ 1V, 1MHz, Current - Average Rectified (Io): 5A, Supplier Device Package: Sawn on foil, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A, Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5, Voltage Coupled to Current - Reverse Leakage @ Vr: 600, Current - Reverse Leakage @ Vr: 200 µA @ 600 V.