SKM300GAR12E4 22892418 SEMIKRON DANFOSS
Hersteller: SEMIKRON DANFOSS
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 324A
Pulsed collector current: 900A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw
Case: SEMITRANS3
Application: for UPS; frequency changer; Inverter; photovoltaics
Collector current: 324A
Pulsed collector current: 900A
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Type of module: IGBT
Topology: buck chopper
Max. off-state voltage: 1.2kV
Semiconductor structure: diode/transistor
Gate-emitter voltage: ±20V
Anzahl je Verpackung: 1 Stücke
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Technische Details SKM300GAR12E4 22892418 SEMIKRON DANFOSS
Category: IGBT modules, Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw, Case: SEMITRANS3, Application: for UPS; frequency changer; Inverter; photovoltaics, Collector current: 324A, Pulsed collector current: 900A, Electrical mounting: FASTON connectors; screw, Mechanical mounting: screw, Type of module: IGBT, Topology: buck chopper, Max. off-state voltage: 1.2kV, Semiconductor structure: diode/transistor, Gate-emitter voltage: ±20V, Anzahl je Verpackung: 1 Stücke.
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SKM300GAR12E4 22892418 | Hersteller : SEMIKRON DANFOSS |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; screw Case: SEMITRANS3 Application: for UPS; frequency changer; Inverter; photovoltaics Collector current: 324A Pulsed collector current: 900A Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Type of module: IGBT Topology: buck chopper Max. off-state voltage: 1.2kV Semiconductor structure: diode/transistor Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |