TZ310N26KOGHPSA1 Infineon Technologies
Hersteller: Infineon Technologies
Description: DIODE BG-PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.6 kV
Description: DIODE BG-PB501-1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 445 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (RMS)) (Max): 700 A
Voltage - Off State: 2.6 kV
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Technische Details TZ310N26KOGHPSA1 Infineon Technologies
Description: DIODE BG-PB501-1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 125°C, Structure: Single, Current - Hold (Ih) (Max): 300 mA, Current - Gate Trigger (Igt) (Max): 250 mA, Current - Non Rep. Surge 50, 60Hz (Itsm): 9000A @ 50Hz, Number of SCRs, Diodes: 1 SCR, Current - On State (It (AV)) (Max): 445 A, Voltage - Gate Trigger (Vgt) (Max): 1.5 V, Current - On State (It (RMS)) (Max): 700 A, Voltage - Off State: 2.6 kV.