YQ10RSM10SDTL1 ROHM Semiconductor
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl
auf Bestellung 7989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 2.02 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.89 EUR |
| 2000+ | 0.84 EUR |
| 4000+ | 0.8 EUR |
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Technische Details YQ10RSM10SDTL1 ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 10A, TO-277A, Highly Efficient SBD: The YQ10RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF it achieves stabl.