YQ30NL10SEFHTL ROHM Semiconductor
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.77 EUR |
| 10+ | 3.13 EUR |
| 100+ | 2.48 EUR |
| 500+ | 2.09 EUR |
| 1000+ | 1.75 EUR |
| 2000+ | 1.67 EUR |
| 5000+ | 1.65 EUR |
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Technische Details YQ30NL10SEFHTL ROHM Semiconductor
Schottky Diodes & Rectifiers Trench MOS Structure, 100V, 30A, TO-263L, Highly Efficient SBD for Automotive: The YQ30NL10SEFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VF and low IR. While its low VF i.