Produkte > BROADCOM (AVAGO) > Alle Produkte des Herstellers BROADCOM (AVAGO) (1326) > Seite 23 nach 23
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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HST6-C190 | BROADCOM (AVAGO) |
Category: Phototransistors Description: Phototransistor; SMD; Dim: 1.7x0.8x0.65mm; 6V; Lens: transparent Collector-emitter voltage: 6V LED lens: transparent Type of photoelement: phototransistor Dark current: 0.1µA Dimensions: 1.7x0.8x0.65mm Front: convex Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
HST9-B350 | BROADCOM (AVAGO) |
Category: Phototransistors Description: Phototransistor; SMD; Dim: 3.2x1.8x1.1mm; 30V; Lens: black Collector-emitter voltage: 30V LED lens: black Type of photoelement: phototransistor Dark current: 0.1µA Dimensions: 3.2x1.8x1.1mm Front: convex Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
HST9-B400 | BROADCOM (AVAGO) |
Category: Phototransistors Description: Phototransistor; SMD; Dim: 3.2x1.6x2.55mm; 30V; Lens: black Collector-emitter voltage: 30V LED lens: black Type of photoelement: phototransistor Dark current: 0.1µA Dimensions: 3.2x1.6x2.55mm Front: convex Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
HST9-C350 | BROADCOM (AVAGO) |
Category: Phototransistors Description: Phototransistor; SMD; Dim: 3.2x1.6x1.1mm; 30V; Lens: transparent Collector-emitter voltage: 30V LED lens: transparent Type of photoelement: phototransistor Dark current: 0.1µA Dimensions: 3.2x1.6x1.1mm Front: convex Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
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MGA-655T6-BLKG | BROADCOM (AVAGO) |
![]() Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW Type of integrated circuit: RF amplifier Bandwidth: 2.5...4GHz Mounting: SMT Number of channels: 1 Operating temperature: -65...150°C Kind of package: bulk Power dissipation: 66mW Integrated circuit features: low noise Operating voltage: 4V Noise Figure: 1.2dB Open-loop gain: 14.7dB |
auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) |
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MGA-655T6-BLKG | BROADCOM (AVAGO) |
![]() Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW Type of integrated circuit: RF amplifier Bandwidth: 2.5...4GHz Mounting: SMT Number of channels: 1 Operating temperature: -65...150°C Kind of package: bulk Power dissipation: 66mW Integrated circuit features: low noise Operating voltage: 4V Noise Figure: 1.2dB Open-loop gain: 14.7dB Anzahl je Verpackung: 1 Stücke |
auf Bestellung 67 Stücke: Lieferzeit 7-14 Tag (e) |
|
HST6-C190 |
Hersteller: BROADCOM (AVAGO)
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 1.7x0.8x0.65mm; 6V; Lens: transparent
Collector-emitter voltage: 6V
LED lens: transparent
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 1.7x0.8x0.65mm
Front: convex
Mounting: SMD
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 1.7x0.8x0.65mm; 6V; Lens: transparent
Collector-emitter voltage: 6V
LED lens: transparent
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 1.7x0.8x0.65mm
Front: convex
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HST9-B350 |
Hersteller: BROADCOM (AVAGO)
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.8x1.1mm; 30V; Lens: black
Collector-emitter voltage: 30V
LED lens: black
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.8x1.1mm
Front: convex
Mounting: SMD
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.8x1.1mm; 30V; Lens: black
Collector-emitter voltage: 30V
LED lens: black
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.8x1.1mm
Front: convex
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HST9-B400 |
Hersteller: BROADCOM (AVAGO)
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.6x2.55mm; 30V; Lens: black
Collector-emitter voltage: 30V
LED lens: black
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.6x2.55mm
Front: convex
Mounting: SMD
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.6x2.55mm; 30V; Lens: black
Collector-emitter voltage: 30V
LED lens: black
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.6x2.55mm
Front: convex
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
HST9-C350 |
Hersteller: BROADCOM (AVAGO)
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.6x1.1mm; 30V; Lens: transparent
Collector-emitter voltage: 30V
LED lens: transparent
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.6x1.1mm
Front: convex
Mounting: SMD
Category: Phototransistors
Description: Phototransistor; SMD; Dim: 3.2x1.6x1.1mm; 30V; Lens: transparent
Collector-emitter voltage: 30V
LED lens: transparent
Type of photoelement: phototransistor
Dark current: 0.1µA
Dimensions: 3.2x1.6x1.1mm
Front: convex
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MGA-655T6-BLKG |
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Hersteller: BROADCOM (AVAGO)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW
Type of integrated circuit: RF amplifier
Bandwidth: 2.5...4GHz
Mounting: SMT
Number of channels: 1
Operating temperature: -65...150°C
Kind of package: bulk
Power dissipation: 66mW
Integrated circuit features: low noise
Operating voltage: 4V
Noise Figure: 1.2dB
Open-loop gain: 14.7dB
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW
Type of integrated circuit: RF amplifier
Bandwidth: 2.5...4GHz
Mounting: SMT
Number of channels: 1
Operating temperature: -65...150°C
Kind of package: bulk
Power dissipation: 66mW
Integrated circuit features: low noise
Operating voltage: 4V
Noise Figure: 1.2dB
Open-loop gain: 14.7dB
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |
MGA-655T6-BLKG |
![]() |
Hersteller: BROADCOM (AVAGO)
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW
Type of integrated circuit: RF amplifier
Bandwidth: 2.5...4GHz
Mounting: SMT
Number of channels: 1
Operating temperature: -65...150°C
Kind of package: bulk
Power dissipation: 66mW
Integrated circuit features: low noise
Operating voltage: 4V
Noise Figure: 1.2dB
Open-loop gain: 14.7dB
Anzahl je Verpackung: 1 Stücke
Category: SMD operational amplifiers
Description: IC: RF amplifier; 2.5÷4GHz; Ch: 1; 4V; Gain: 14.7dB; bulk; 66mW
Type of integrated circuit: RF amplifier
Bandwidth: 2.5...4GHz
Mounting: SMT
Number of channels: 1
Operating temperature: -65...150°C
Kind of package: bulk
Power dissipation: 66mW
Integrated circuit features: low noise
Operating voltage: 4V
Noise Figure: 1.2dB
Open-loop gain: 14.7dB
Anzahl je Verpackung: 1 Stücke
auf Bestellung 67 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
67+ | 1.07 EUR |