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AUIRF3710ZSTRL AUIRF3710ZSTRL Infineon Technologies AG auirf3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CE6327HTSA1 BC847CE6327HTSA1 Infineon Technologies AG bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.74 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BC847CWH6327XTSA1 BC847CWH6327XTSA1 Infineon Technologies AG bc847_8_9_bc850.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4962 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
309+0.23 EUR
539+0.13 EUR
687+0.1 EUR
827+0.087 EUR
1000+0.072 EUR
2500+0.056 EUR
3000+0.053 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF IRF3710LPBF Infineon Technologies AG irf3710spbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF IRF3710PBF Infineon Technologies AG irf3710.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
50+1.46 EUR
61+1.18 EUR
100+1.06 EUR
250+0.93 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF IRF3710STRLPBF Infineon Technologies AG irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF IRF3710STRRPBF Infineon Technologies AG irf3710spbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF IRF3710ZPBF Infineon Technologies AG irf3710z.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 82nC
Kind of package: tube
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF IRF3710ZSTRLPBF Infineon Technologies AG irf3710zpbf.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260MPBF IRFP260MPBF Infineon Technologies AG irfp260mpbf.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.63 EUR
27+2.66 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260NPBF IRFP260NPBF Infineon Technologies AG irfp260n.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
14+5.25 EUR
24+3.05 EUR
26+2.82 EUR
50+2.67 EUR
100+2.49 EUR
125+2.46 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRS2453DSTRPBF IRS2453DSTRPBF Infineon Technologies AG irs2453d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 2443 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
55+1.3 EUR
57+1.27 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
AUIRF3710ZSTRL auirf3710z.pdf
AUIRF3710ZSTRL
Hersteller: Infineon Technologies AG
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC847CE6327HTSA1 bc847_8_9_bc850.pdf
BC847CE6327HTSA1
Hersteller: Infineon Technologies AG
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT23
Mounting: SMD
Frequency: 250MHz
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
BC847CWH6327XTSA1 bc847_8_9_bc850.pdf
BC847CWH6327XTSA1
Hersteller: Infineon Technologies AG
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.33W; SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.33W
Case: SOT323
Mounting: SMD
Frequency: 250MHz
auf Bestellung 4962 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
309+0.23 EUR
539+0.13 EUR
687+0.1 EUR
827+0.087 EUR
1000+0.072 EUR
2500+0.056 EUR
3000+0.053 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710LPBF irf3710spbf.pdf
IRF3710LPBF
Hersteller: Infineon Technologies AG
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO262
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710PBF irf3710.pdf
IRF3710PBF
Hersteller: Infineon Technologies AG
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 86.7nC
Kind of package: tube
auf Bestellung 380 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
50+1.46 EUR
61+1.18 EUR
100+1.06 EUR
250+0.93 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRLPBF irf3710spbf.pdf
IRF3710STRLPBF
Hersteller: Infineon Technologies AG
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
auf Bestellung 419 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.17 EUR
46+1.56 EUR
55+1.31 EUR
100+1.21 EUR
250+1.08 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710STRRPBF irf3710spbf.pdf
IRF3710STRRPBF
Hersteller: Infineon Technologies AG
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 57A; 200W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 57A
Power dissipation: 200W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZPBF irf3710z.pdf
IRF3710ZPBF
Hersteller: Infineon Technologies AG
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: THT
Kind of channel: enhancement
Technology: HEXFET®
Gate charge: 82nC
Kind of package: tube
auf Bestellung 388 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.1 EUR
48+1.52 EUR
61+1.18 EUR
66+1.09 EUR
74+0.98 EUR
100+0.9 EUR
200+0.83 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
IRF3710ZSTRLPBF irf3710zpbf.pdf
IRF3710ZSTRLPBF
Hersteller: Infineon Technologies AG
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 59A; 160W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 59A
Power dissipation: 160W
Case: D2PAK
Mounting: SMD
Kind of channel: enhancement
Technology: HEXFET®
Kind of package: reel
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260MPBF irfp260mpbf.pdf
IRFP260MPBF
Hersteller: Infineon Technologies AG
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.63 EUR
27+2.66 EUR
33+2.22 EUR
40+1.82 EUR
50+1.63 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
IRFP260NPBF irfp260n.pdf
IRFP260NPBF
Hersteller: Infineon Technologies AG
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 35A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 35A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 234nC
Kind of package: tube
Kind of channel: enhancement
Technology: HEXFET®
auf Bestellung 243 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.25 EUR
24+3.05 EUR
26+2.82 EUR
50+2.67 EUR
100+2.49 EUR
125+2.46 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
IRS2453DSTRPBF irs2453d.pdf
IRS2453DSTRPBF
Hersteller: Infineon Technologies AG
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; SO14; -260÷180mA; 1W; Ch: 4; 10÷16.6VDC; 600V
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: ballast controller; gate driver; high-/low-side
Case: SO14
Output current: -260...180mA
Power: 1W
Number of channels: 4
Supply voltage: 10...16.6V DC
Mounting: SMD
Operating temperature: -25...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 0.12µs
Turn-off time: 50ns
auf Bestellung 2443 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
55+1.3 EUR
57+1.27 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH