| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IS25WE256E-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS25WE256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS25WP256E-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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IS25WP256E-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IS25WP256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS25WP256E-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: in-tray; tube Operating frequency: 166MHz Interface: DTR; QPI; SPI |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS61C5128AS-25QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 5V Access time: 25ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 38 Stücke: Lieferzeit 14-21 Tag (e) |
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IS25LP032D-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 32Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SOP8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS61WV51216EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS42S16100H-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP50 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 16Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx16bitx2 |
auf Bestellung 209 Stücke: Lieferzeit 14-21 Tag (e) |
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IS42S16800F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 128Mb DRAM Clock frequency: 166MHz Memory organisation: 2Mx16bitx4 |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS25WP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64WV51216EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS25LP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS25LP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS25WP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS25LQ512B-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 2.3...3.6V Memory: 512kb FLASH Operating frequency: 104MHz Interface: SPI Kind of memory: NOR Kind of interface: serial |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IS66WVS1M8BLL-104NLI | ISSI |
Category: Serial SRAM memories - integrated circ.Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 1Mx8bit Operating voltage: 3V Case: SO8 Mounting: SMD Operating temperature: -40...85°C Kind of interface: serial Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IS42SM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 6ns Supply voltage: 2.7...3.6V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42SM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42SM32800K-75BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 2.7...3.6V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42VM32800K-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 6ns Supply voltage: 1.7...1.95V DC Clock frequency: 166MHz Memory organisation: 2Mx32bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42VM32800K-75BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90 Operating temperature: -40...85°C Memory: 256Mb DRAM Type of integrated circuit: DRAM memory Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Mounting: SMD Case: TFBGA90 Access time: 7.5ns Supply voltage: 1.7...1.95V DC Clock frequency: 133MHz Memory organisation: 2Mx32bitx4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61C5128AS-25QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Operating voltage: 5V Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 25ns Memory organisation: 512kx8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS42S16400J-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP54 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 64Mb DRAM Clock frequency: 143MHz Memory organisation: 4Mx16bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IS43R86400F-5TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-6TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-6TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-6TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 6ns Supply voltage: 3...3.6V DC Clock frequency: 167MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-7TL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: 0...70°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-7TLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S86400F-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP54 II Access time: 7ns Supply voltage: 3...3.6V DC Clock frequency: 143MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43R86400F-5BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43R86400F-5TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TSOP66 II Access time: 5ns Supply voltage: 2.5V DC Clock frequency: 200MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR1; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-25DBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-25DBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-3DBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: 0...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-3DBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-3DBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 15ns Supply voltage: 1.7...1.9V DC Clock frequency: 333MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS43DR86400E-25DBLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60 Operating temperature: -40...85°C Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Case: TWBGA60 Access time: 12.5ns Supply voltage: 1.7...1.9V DC Clock frequency: 400MHz Memory organisation: 16Mx8bitx4 Memory: 512Mb DRAM Kind of memory: DDR2; SDRAM Type of integrated circuit: DRAM memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS34ML04G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S16100H-7TLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: reel; tape Kind of interface: parallel Kind of memory: SDRAM Case: TSOP50 II Operating temperature: -40...85°C Access time: 7ns Supply voltage: 3.3V DC Memory: 16Mb DRAM Clock frequency: 143MHz Memory organisation: 512kx16bitx2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS42S16100H-6BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60 Type of integrated circuit: DRAM memory Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SDRAM Case: TFBGA60 Operating temperature: -40...85°C Access time: 6ns Supply voltage: 3...3.6V DC Memory: 16Mb DRAM Clock frequency: 166MHz Memory organisation: 512kx16bitx2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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IS61WV20488BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 2048x8bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
auf Bestellung 131 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS61WV102416EDBLL-10B2LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64LF12832A-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64LF12832A-7.5TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: reel; tape Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64LPS12832A-200TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 3.1ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64LPS12832A-200TQLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: reel; tape Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 3.1ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS25618EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS61LPS25618EC-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Type of integrated circuit: SRAM memory Kind of package: reel; tape Kind of interface: parallel Mounting: SMD Kind of memory: SRAM Operating temperature: -40...85°C Access time: 3.1ns Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Case: QFP100 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| IS64LF12832EC-7.5TQLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel Type of integrated circuit: SRAM memory Kind of package: in-tray; tube Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Mounting: SMD Operating temperature: -40...125°C Access time: 7.5ns Operating voltage: 3.3V Memory: 4Mb SRAM Memory organisation: 128kx32bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
IS25WP080D-JKLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8 Type of integrated circuit: FLASH memory Case: WSON8 Mounting: SMD Operating temperature: -40...105°C Dimensions: 6x5mm Operating voltage: 1.65...1.95V Memory: 8Mb FLASH Operating frequency: 133MHz Interface: DTR; QPI; SPI Kind of memory: NOR Kind of interface: serial |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS34ML02G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Mounting: SMD Kind of package: in-tray; tube Kind of interface: parallel Case: TSOP48 Operating temperature: -40...85°C Operating voltage: 2.7...3.6V Memory: 2Gb FLASH Kind of memory: NAND Interface: parallel 8bit Type of integrated circuit: FLASH memory |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
IS34ML01G081-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Mounting: SMD Case: VFBGA63 Operating temperature: -40...85°C Interface: parallel 8bit Kind of interface: parallel Kind of memory: NAND Operating voltage: 2.7...3.6V Memory: 1Gb FLASH |
auf Bestellung 397 Stücke: Lieferzeit 14-21 Tag (e) |
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IS34ML01G084-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Mounting: SMD Case: VFBGA63 Operating temperature: -40...85°C Interface: parallel 8bit Kind of interface: parallel Kind of memory: NAND Operating voltage: 2.7...3.6V Memory: 1Gb FLASH |
auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) |
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| IS34MW01G164-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Case: VFBGA63 Kind of interface: parallel Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
|
IS34ML02G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Case: TSOP48 Kind of interface: parallel Interface: parallel 8bit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| IS43LR16640A-5BL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C Kind of package: in-tray; tube Case: TWBGA60 Kind of interface: parallel Operating temperature: 0...70°C Access time: 5ns Supply voltage: 1.7...1.95V DC Memory: 1Gb DRAM Memory organisation: 16Mx16bitx4 Clock frequency: 200MHz Kind of memory: LPDDR; SDRAM Type of integrated circuit: DRAM memory Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IS25WE256E-RHLA3 |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WE256E-RHLA3-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WP256E-JLLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WP256E-JLLE-TR |
![]() |
Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WP256E-RHLA3-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WP256E-RHLE |
![]() |
Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: in-tray; tube
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS61C5128AS-25QLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 5V
Access time: 25ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 9.52 EUR |
| 10+ | 9.3 EUR |
| IS25LP032D-JNLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 32MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SOP8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 32Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SOP8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 3.58 EUR |
| IS61WV51216EDBLL-10BLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S16100H-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
auf Bestellung 209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 2.57 EUR |
| IS42S16800F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 128MbDRAM; 2Mx16bitx4; 166MHz; 6ns; TSOP54 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 128Mb DRAM
Clock frequency: 166MHz
Memory organisation: 2Mx16bitx4
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 10.21 EUR |
| IS25WP080D-JULE-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS64WV51216EDBLL-10CTLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25LP016D-JULE-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25LP080D-JULE-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25WP016D-JULE-TR |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS25LQ512B-JKLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 512kbFLASH; SPI; 104MHz; 2.3÷3.6V; WSON8; serial
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 2.3...3.6V
Memory: 512kb FLASH
Operating frequency: 104MHz
Interface: SPI
Kind of memory: NOR
Kind of interface: serial
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 7.95 EUR |
| IS66WVS1M8BLL-104NLI |
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Hersteller: ISSI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 8MbSRAM; 1Mx8bit; 3V; SO8; -40÷85°C; serial
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 1Mx8bit
Operating voltage: 3V
Case: SO8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS42SM32800K-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Produkt ist nicht verfügbar
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| IS42SM32800K-75BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Produkt ist nicht verfügbar
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| IS42SM32800K-75BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 2.7...3.6V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS42VM32800K-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 166MHz; 6ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 6ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 166MHz
Memory organisation: 2Mx32bitx4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42VM32800K-75BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 256MbDRAM; 2Mx32bitx4; 133MHz; 7.5ns; TFBGA90
Operating temperature: -40...85°C
Memory: 256Mb DRAM
Type of integrated circuit: DRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Mounting: SMD
Case: TFBGA90
Access time: 7.5ns
Supply voltage: 1.7...1.95V DC
Clock frequency: 133MHz
Memory organisation: 2Mx32bitx4
Produkt ist nicht verfügbar
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| IS61C5128AS-25QLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 5V; 25ns; SOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Operating voltage: 5V
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 25ns
Memory organisation: 512kx8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS42S16400J-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bit
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 64MbDRAM; 4Mx16bit; 143MHz; 7ns; TSOP54 II; 3.3VDC
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP54 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 64Mb DRAM
Clock frequency: 143MHz
Memory organisation: 4Mx16bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43R86400F-5TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-6TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-6TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-6TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 167MHz; 6ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 6ns
Supply voltage: 3...3.6V DC
Clock frequency: 167MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-7TL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-7TLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS42S86400F-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 143MHz; 7ns; TSOP54 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP54 II
Access time: 7ns
Supply voltage: 3...3.6V DC
Clock frequency: 143MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43R86400F-5BLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43R86400F-5TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 200MHz; 5ns; TSOP66 II
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TSOP66 II
Access time: 5ns
Supply voltage: 2.5V DC
Clock frequency: 200MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR1; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43DR86400E-25DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43DR86400E-25DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43DR86400E-3DBL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: 0...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43DR86400E-3DBLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS43DR86400E-3DBLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 333MHz; 15ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 15ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 333MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
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| IS43DR86400E-25DBLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 16Mx8bitx4; 400MHz; 12.5ns; TWBGA60
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Case: TWBGA60
Access time: 12.5ns
Supply voltage: 1.7...1.9V DC
Clock frequency: 400MHz
Memory organisation: 16Mx8bitx4
Memory: 512Mb DRAM
Kind of memory: DDR2; SDRAM
Type of integrated circuit: DRAM memory
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS34ML04G081-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS42S16100H-7TLI-TR |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 143MHz; 7ns; TSOP50 II
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SDRAM
Case: TSOP50 II
Operating temperature: -40...85°C
Access time: 7ns
Supply voltage: 3.3V DC
Memory: 16Mb DRAM
Clock frequency: 143MHz
Memory organisation: 512kx16bitx2
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| IS42S16100H-6BLI |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 16Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx16bitx2
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 16MbDRAM; 512kx16bitx2; 166MHz; 6ns; TFBGA60
Type of integrated circuit: DRAM memory
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SDRAM
Case: TFBGA60
Operating temperature: -40...85°C
Access time: 6ns
Supply voltage: 3...3.6V DC
Memory: 16Mb DRAM
Clock frequency: 166MHz
Memory organisation: 512kx16bitx2
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| IS61WV20488BLL-10TLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 2048x8bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 2048x8bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
auf Bestellung 131 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 34.75 EUR |
| 5+ | 31.77 EUR |
| 25+ | 28.6 EUR |
| 100+ | 26.81 EUR |
| IS61WV102416EDBLL-10B2LI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Produkt ist nicht verfügbar
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| IS64LF12832A-7.5TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS64LF12832A-7.5TQLA3-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS64LPS12832A-200TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS64LPS12832A-200TQLA3-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 3.1ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Produkt ist nicht verfügbar
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| IS61LPS25618A-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS61LPS25618EC-200TQLI |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS61LPS25618EC-200TQLI-TR |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Type of integrated circuit: SRAM memory
Kind of package: reel; tape
Kind of interface: parallel
Mounting: SMD
Kind of memory: SRAM
Operating temperature: -40...85°C
Access time: 3.1ns
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Case: QFP100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS64LF12832EC-7.5TQLA3 |
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Hersteller: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 128kx32bit; 3.3V; 7.5ns; QFP100; parallel
Type of integrated circuit: SRAM memory
Kind of package: in-tray; tube
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Mounting: SMD
Operating temperature: -40...125°C
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4Mb SRAM
Memory organisation: 128kx32bit
Produkt ist nicht verfügbar
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| IS25WP080D-JKLE |
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Hersteller: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 8Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; WSON8
Type of integrated circuit: FLASH memory
Case: WSON8
Mounting: SMD
Operating temperature: -40...105°C
Dimensions: 6x5mm
Operating voltage: 1.65...1.95V
Memory: 8Mb FLASH
Operating frequency: 133MHz
Interface: DTR; QPI; SPI
Kind of memory: NOR
Kind of interface: serial
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 53+ | 1.36 EUR |
| 54+ | 1.33 EUR |
| IS34ML02G081-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Mounting: SMD
Kind of package: in-tray; tube
Kind of interface: parallel
Case: TSOP48
Operating temperature: -40...85°C
Operating voltage: 2.7...3.6V
Memory: 2Gb FLASH
Kind of memory: NAND
Interface: parallel 8bit
Type of integrated circuit: FLASH memory
Produkt ist nicht verfügbar
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| IS34ML01G081-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: VFBGA63
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of interface: parallel
Kind of memory: NAND
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: VFBGA63
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of interface: parallel
Kind of memory: NAND
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
auf Bestellung 397 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 6.32 EUR |
| 13+ | 5.69 EUR |
| 25+ | 5.06 EUR |
| 100+ | 4.75 EUR |
| IS34ML01G084-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: VFBGA63
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of interface: parallel
Kind of memory: NAND
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Mounting: SMD
Case: VFBGA63
Operating temperature: -40...85°C
Interface: parallel 8bit
Kind of interface: parallel
Kind of memory: NAND
Operating voltage: 2.7...3.6V
Memory: 1Gb FLASH
auf Bestellung 220 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.8 EUR |
| 20+ | 3.76 EUR |
| IS34MW01G164-BLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Case: VFBGA63
Kind of interface: parallel
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IS34ML02G084-TLI |
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Hersteller: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Case: TSOP48
Kind of interface: parallel
Interface: parallel 8bit
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IS43LR16640A-5BL |
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Hersteller: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 1GbDRAM; 16Mx16bitx4; 200MHz; 5ns; TWBGA60; 0÷70°C
Kind of package: in-tray; tube
Case: TWBGA60
Kind of interface: parallel
Operating temperature: 0...70°C
Access time: 5ns
Supply voltage: 1.7...1.95V DC
Memory: 1Gb DRAM
Memory organisation: 16Mx16bitx4
Clock frequency: 200MHz
Kind of memory: LPDDR; SDRAM
Type of integrated circuit: DRAM memory
Mounting: SMD
Produkt ist nicht verfügbar
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