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DFS400HF17I3C2 | Leapers Semiconductor Co.,Ltd |
Description: MOSFET 2N-CH 1700V 420A Packaging: Box Package / Case: Module Mounting Type: Chassis Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 2.585kW (Tc) Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 420A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V FET Feature: Silicon Carbide (SiC) Vgs(th) (Max) @ Id: 2.7V @ 240mA |
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| DFS400HF17I3C2 |
Hersteller: Leapers Semiconductor Co.,Ltd
Description: MOSFET 2N-CH 1700V 420A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.585kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 2.7V @ 240mA
Description: MOSFET 2N-CH 1700V 420A
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.585kW (Tc)
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 420A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 30500pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 400A, 15V
Gate Charge (Qg) (Max) @ Vgs: 1.022nC @ 15V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 2.7V @ 240mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH