Produkte > LITTELFUSE > Alle Produkte des Herstellers LITTELFUSE (139806) > Seite 2330 nach 2331
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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SMF4L14CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L17CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 14.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L20CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 12.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L22CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 22V Breakdown voltage: 24.4...26.9V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L26CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 9.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L30CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 8.3A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L43CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 43V Breakdown voltage: 47.8...52.8V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L45CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 45V Breakdown voltage: 50...55.3V Max. forward impulse current: 5.5A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L9.0CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 9V Breakdown voltage: 10...11.1V Max. forward impulse current: 26.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L15CA | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L120A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 120V Breakdown voltage: 133...147V Max. forward impulse current: 1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L130A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 130V Breakdown voltage: 144...159V Max. forward impulse current: 1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L90A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 90V Breakdown voltage: 100...111V Max. forward impulse current: 1.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L160A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 160V Breakdown voltage: 178...197V Max. forward impulse current: 0.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L220A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 220V Breakdown voltage: 246...272V Max. forward impulse current: 0.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L12A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 20.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L15A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L16A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 17.8...19.7V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L17A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 18.9...20.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L100A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 100V Breakdown voltage: 111...123V Max. forward impulse current: 1.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L10A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L110A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 110V Breakdown voltage: 122...135V Max. forward impulse current: 1.1A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L11A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.2...13.5V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L13A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 14.4...15.9V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L14A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L150A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 150V Breakdown voltage: 167...185V Max. forward impulse current: 0.8A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L170A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 170V Breakdown voltage: 189...209V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L180A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 180V Breakdown voltage: 201...222V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L188A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 188V Breakdown voltage: 209...231V Max. forward impulse current: 0.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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SMF4L18A | LITTELFUSE |
![]() Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 20...22.1V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: SMF4L |
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TPSMF4L10A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 10V Breakdown voltage: 11.7V Max. forward impulse current: 23.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L15A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 15V Breakdown voltage: 17.6V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L11A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 11V Breakdown voltage: 12.85V Max. forward impulse current: 22A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L13A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 13V Breakdown voltage: 15.15V Max. forward impulse current: 18.6A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L14A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 14V Breakdown voltage: 16.4V Max. forward impulse current: 17.2A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L16A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 16V Breakdown voltage: 18.75V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L17A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 17V Breakdown voltage: 19.9V Max. forward impulse current: 14.5A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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TPSMF4L18A | LITTELFUSE |
![]() Description: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 18V Breakdown voltage: 21.05V Max. forward impulse current: 13.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: SOD123F Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: TPSMF4L |
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S8020LTP | LITTELFUSE |
![]() Description: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube Mounting: THT Kind of package: tube Features of semiconductor devices: glass passivated Case: TO220ABIns Type of thyristor: thyristor Gate current: 30mA Load current: 12.8A Max. load current: 20A Max. off-state voltage: 0.8kV |
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SMF4L14CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L17CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L20CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 22.2÷24.5V; 12.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 12.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L22CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 24.4÷26.9V; 11.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 22V
Breakdown voltage: 24.4...26.9V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L26CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 28.9÷31.9V; 9.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 9.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L30CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 33.3÷36.8V; 8.3A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L43CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 47.8÷52.8V; 5.8A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...52.8V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L45CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 50÷55.3V; 5.5A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 45V
Breakdown voltage: 50...55.3V
Max. forward impulse current: 5.5A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L9.0CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 10÷11.1V; 26.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 26.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L15CA |
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Hersteller: LITTELFUSE
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; bidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: bidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L120A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 133÷147V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 120V
Breakdown voltage: 133...147V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L130A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 144÷159V; 1A; unidirectional; ±5%; SOD123F; SMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 130V
Breakdown voltage: 144...159V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L90A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 100÷111V; 1.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 90V
Breakdown voltage: 100...111V
Max. forward impulse current: 1.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L160A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 178÷197V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 160V
Breakdown voltage: 178...197V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L220A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 246÷272V; 600mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 220V
Breakdown voltage: 246...272V
Max. forward impulse current: 0.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L12A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 13.3÷14.7V; 20.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 20.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L15A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 16.7÷18.5V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L16A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 17.8÷19.7V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 17.8...19.7V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L17A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 18.9÷20.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 18.9...20.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L100A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 111÷123V; 1.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 100V
Breakdown voltage: 111...123V
Max. forward impulse current: 1.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L10A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 11.1÷12.3V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L110A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 122÷135V; 1.1A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 110V
Breakdown voltage: 122...135V
Max. forward impulse current: 1.1A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L11A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 12.2÷13.5V; 22A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.2...13.5V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L13A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 14.4÷15.9V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 14.4...15.9V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L14A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 15.6÷17.2V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L150A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 167÷185V; 800mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 150V
Breakdown voltage: 167...185V
Max. forward impulse current: 0.8A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L170A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 189÷209V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 170V
Breakdown voltage: 189...209V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L180A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 201÷222V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 180V
Breakdown voltage: 201...222V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L188A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 209÷231V; 700mA; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 188V
Breakdown voltage: 209...231V
Max. forward impulse current: 0.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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SMF4L18A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 20÷22.1V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 20...22.1V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: SMF4L
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TPSMF4L10A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 11.7V; 23.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 10V
Breakdown voltage: 11.7V
Max. forward impulse current: 23.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L15A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 17.6V; 16.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 15V
Breakdown voltage: 17.6V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L11A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 12.85V; 22A; unidirectional; ±5%; SOD123F; TPSMF4L
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 11V
Breakdown voltage: 12.85V
Max. forward impulse current: 22A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L13A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 15.15V; 18.6A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 13V
Breakdown voltage: 15.15V
Max. forward impulse current: 18.6A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L14A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 16.4V; 17.2A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 14V
Breakdown voltage: 16.4V
Max. forward impulse current: 17.2A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L16A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 18.75V; 15.4A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 16V
Breakdown voltage: 18.75V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L17A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 19.9V; 14.5A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 17V
Breakdown voltage: 19.9V
Max. forward impulse current: 14.5A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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TPSMF4L18A |
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Hersteller: LITTELFUSE
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21.05V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 21.05V; 13.7A; unidirectional; ±5%; SOD123F
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 18V
Breakdown voltage: 21.05V
Max. forward impulse current: 13.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SOD123F
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: TPSMF4L
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S8020LTP |
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Hersteller: LITTELFUSE
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: TO220ABIns
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.8kV
Category: SMD/THT thyristors
Description: Thyristor; 800V; Ifmax: 20A; 12.8A; Igt: 30mA; TO220ABIns; THT; tube
Mounting: THT
Kind of package: tube
Features of semiconductor devices: glass passivated
Case: TO220ABIns
Type of thyristor: thyristor
Gate current: 30mA
Load current: 12.8A
Max. load current: 20A
Max. off-state voltage: 0.8kV
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