Produkte > LUGUANG ELECTRONIC > Alle Produkte des Herstellers LUGUANG ELECTRONIC (1105) > Seite 13 nach 19
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| KTC3875 | LUGUANG ELECTRONIC | KTC3875-LGE NPN SMD transistors |
auf Bestellung 2340 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| LGE201 | LUGUANG ELECTRONIC | LGE201-LGE Flat single phase diode bridge rectif. |
auf Bestellung 865 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| LGE2300 | LUGUANG ELECTRONIC | LGE2300-LGE SMD N channel transistors |
auf Bestellung 10980 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
LGE2301 | LUGUANG ELECTRONIC |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3A Gate charge: 12nC On-state resistance: 0.14Ω Power dissipation: 1W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 5237 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGE2301 | LUGUANG ELECTRONIC |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Drain current: -3A Gate charge: 12nC On-state resistance: 0.14Ω Power dissipation: 1W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5237 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| LGE2302 | LUGUANG ELECTRONIC | LGE2302-LGE SMD N channel transistors |
auf Bestellung 1660 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| LGE2304 | LUGUANG ELECTRONIC | LGE2304-LGE SMD N channel transistors |
auf Bestellung 6300 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| LGE2305 | LUGUANG ELECTRONIC | LGE2305-LGE SMD P channel transistors |
auf Bestellung 3515 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
LGE2312 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 31mΩ Polarisation: unipolar Kind of channel: enhancement |
auf Bestellung 3970 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGE2312 | LUGUANG ELECTRONIC |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Type of transistor: N-MOSFET Drain-source voltage: 20V Drain current: 4.9A On-state resistance: 31mΩ Polarisation: unipolar Kind of channel: enhancement Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3970 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| LGE3M40120Q | LUGUANG ELECTRONIC |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 39A Pulsed drain current: 117A Power dissipation: 300W Case: TO247-4 Gate-source voltage: -5...20V On-state resistance: 69mΩ Mounting: THT Gate charge: 145nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Technology: SiC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 4.75...10V Tolerance: ±1% Voltage drop: 1.15V |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Voltage drop: 1.15V |
auf Bestellung 1195 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
auf Bestellung 920 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEA1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 4.75...10V Tolerance: ±1% Voltage drop: 1.15V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 980 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEA1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 1A Case: SOT89 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Voltage drop: 1.15V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1195 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEA1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89 Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT89 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 920 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGB15N65T2 | LUGUANG ELECTRONIC |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO263 Type of transistor: IGBT Power dissipation: 125W Case: TO263 Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 621 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
auf Bestellung 139 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGF15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP Type of transistor: IGBT Power dissipation: 30.6W Case: TO220FP Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 139 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Power dissipation: 125W Case: TO220 Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V |
auf Bestellung 452 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGP15N65T2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 15A; 125W; TO220 Type of transistor: IGBT Power dissipation: 125W Case: TO220 Mounting: THT Gate charge: 45nC Kind of package: tube Turn-off time: 150ns Turn-on time: 40ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 15A Gate-emitter voltage: ±20V Pulsed collector current: 60A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 452 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| LGEGW100N65FP | LUGUANG ELECTRONIC | LGEGW100N65FP THT IGBT transistors |
auf Bestellung 118 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Mounting: THT Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247 Kind of package: tube Turn-on time: 50ns Gate charge: 0.12µC Turn-off time: 245ns Collector current: 15A Gate-emitter voltage: ±30V Power dissipation: 40W |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW15N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 15A; 40W; TO247 Mounting: THT Pulsed collector current: 45A Collector-emitter voltage: 1.2kV Type of transistor: IGBT Features of semiconductor devices: integrated anti-parallel diode Case: TO247 Kind of package: tube Turn-on time: 50ns Gate charge: 0.12µC Turn-off time: 245ns Collector current: 15A Gate-emitter voltage: ±30V Power dissipation: 40W Anzahl je Verpackung: 1 Stücke |
auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Power dissipation: 82W Case: TO247 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 74ns Gate charge: 82nC Turn-off time: 232ns |
auf Bestellung 144 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW20N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 20A; 82W; TO247 Type of transistor: IGBT Power dissipation: 82W Case: TO247 Mounting: THT Kind of package: tube Collector current: 20A Gate-emitter voltage: ±30V Pulsed collector current: 80A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 74ns Gate charge: 82nC Turn-off time: 232ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 144 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| LGEGW25N120S | LUGUANG ELECTRONIC | LGEGW25N120S THT IGBT transistors |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
|
LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW40N120F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 110W; TO247 Type of transistor: IGBT Power dissipation: 110W Case: TO247 Mounting: THT Gate charge: 107nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 134ns Turn-off time: 503ns Gate-emitter voltage: ±30V Pulsed collector current: 120A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 130 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW40N120F2 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 417W; TO247 Type of transistor: IGBT Power dissipation: 417W Case: TO247 Mounting: THT Gate charge: 250nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 135ns Turn-off time: 270ns Gate-emitter voltage: ±20V Pulsed collector current: 160A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 35 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW40N120TS | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 1.2kV; 40A; 300W; TO247 Type of transistor: IGBT Power dissipation: 300W Case: TO247 Mounting: THT Gate charge: 0.21µC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Collector current: 40A Collector-emitter voltage: 1.2kV Turn-on time: 121ns Turn-off time: 310ns Gate-emitter voltage: ±30V Pulsed collector current: 120A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 145 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW40N65F1 | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 40A; 94W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 40A Power dissipation: 94W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 120A Mounting: THT Gate charge: 83nC Kind of package: tube Turn-on time: 96ns Turn-off time: 187ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW50N65F1A | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 312W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 312W Case: TO247 Gate-emitter voltage: ±20V Pulsed collector current: 150A Mounting: THT Gate charge: 180nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 62ns Turn-off time: 268ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 92 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW50N65SEK | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 136 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns |
auf Bestellung 146 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW50N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 50A; 166W; TO247 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 50A Power dissipation: 166W Case: TO247 Gate-emitter voltage: ±30V Pulsed collector current: 200A Mounting: THT Gate charge: 200nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Turn-on time: 137ns Turn-off time: 331ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 146 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns |
auf Bestellung 113 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW60N65SEU | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 60A; 151W; TO247 Type of transistor: IGBT Case: TO247 Mounting: THT Kind of package: tube Gate-emitter voltage: ±20V Power dissipation: 151W Collector current: 60A Pulsed collector current: 240A Collector-emitter voltage: 650V Features of semiconductor devices: integrated anti-parallel diode Gate charge: 0.21µC Turn-on time: 123ns Turn-off time: 256ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 113 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Turn-off time: 274ns Turn-on time: 161ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW75N65F | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 71W; TO247 Type of transistor: IGBT Power dissipation: 71W Case: TO247 Mounting: THT Gate charge: 192nC Kind of package: tube Turn-off time: 274ns Turn-on time: 161ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 115 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGEGW75N65FP | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 500W; TO247 Type of transistor: IGBT Power dissipation: 500W Case: TO247 Mounting: THT Gate charge: 130nC Kind of package: tube Turn-off time: 225ns Turn-on time: 215ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±20V Pulsed collector current: 225A Collector-emitter voltage: 650V |
auf Bestellung 432 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Turn-off time: 348ns Turn-on time: 156ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V |
auf Bestellung 126 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGEGW75N65S | LUGUANG ELECTRONIC |
Category: THT IGBT transistorsDescription: Transistor: IGBT; 650V; 75A; 250W; TO247 Type of transistor: IGBT Power dissipation: 250W Case: TO247 Mounting: THT Gate charge: 340nC Kind of package: tube Turn-off time: 348ns Turn-on time: 156ns Features of semiconductor devices: integrated anti-parallel diode Collector current: 75A Gate-emitter voltage: ±30V Pulsed collector current: 300A Collector-emitter voltage: 650V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 126 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 4.75...10V Tolerance: ±1% Voltage drop: 1.15V |
auf Bestellung 2960 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V |
auf Bestellung 1983 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape |
auf Bestellung 3686 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LGET1117-3.3 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 3.3V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Number of channels: 1 Input voltage: 4.75...10V Tolerance: ±1% Voltage drop: 1.15V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2960 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGET1117-5.0 | LUGUANG ELECTRONIC |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 1.15V Output voltage: 5V Output current: 1A Case: SOT223 Mounting: SMD Kind of package: reel; tape Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 6.5...12V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1983 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LGET1117-ADJ | LUGUANG ELECTRONIC |
Category: LDO adjustable voltage regulatorsDescription: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 1.15V Output voltage: 1.25...12V Output current: 1A Case: SOT223 Mounting: SMD Operating temperature: 0...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 1.4...8V Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3686 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
|
LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.3A Max. forward impulse current: 1A Kind of package: reel; tape |
auf Bestellung 11327 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
LL4148 | LUGUANG ELECTRONIC |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.15A Semiconductor structure: single diode Case: MiniMELF glass Max. forward voltage: 0.62V Max. load current: 0.3A Max. forward impulse current: 1A Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 11327 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||
| LL4150 | LUGUANG ELECTRONIC |
LL4150-LGE SMD universal diodes |
auf Bestellung 15035 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||
| LL4151 | LUGUANG ELECTRONIC |
LL4151-LGE SMD universal diodes |
auf Bestellung 17009 Stücke: Lieferzeit 7-14 Tag (e) |
|
| KTC3875 |
Hersteller: LUGUANG ELECTRONIC
KTC3875-LGE NPN SMD transistors
KTC3875-LGE NPN SMD transistors
auf Bestellung 2340 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 646+ | 0.11 EUR |
| 1489+ | 0.048 EUR |
| 1573+ | 0.045 EUR |
| LGE201 |
Hersteller: LUGUANG ELECTRONIC
LGE201-LGE Flat single phase diode bridge rectif.
LGE201-LGE Flat single phase diode bridge rectif.
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 374+ | 0.19 EUR |
| 603+ | 0.12 EUR |
| 642+ | 0.11 EUR |
| LGE2300 |
Hersteller: LUGUANG ELECTRONIC
LGE2300-LGE SMD N channel transistors
LGE2300-LGE SMD N channel transistors
auf Bestellung 10980 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1327+ | 0.054 EUR |
| 1861+ | 0.038 EUR |
| 1969+ | 0.036 EUR |
| LGE2301 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 5237 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1335+ | 0.054 EUR |
| 1605+ | 0.045 EUR |
| 1820+ | 0.039 EUR |
| 3000+ | 0.038 EUR |
| LGE2301 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5237 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1335+ | 0.054 EUR |
| 1605+ | 0.045 EUR |
| 1820+ | 0.039 EUR |
| 3000+ | 0.038 EUR |
| LGE2302 |
Hersteller: LUGUANG ELECTRONIC
LGE2302-LGE SMD N channel transistors
LGE2302-LGE SMD N channel transistors
auf Bestellung 1660 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1090+ | 0.066 EUR |
| 1660+ | 0.043 EUR |
| 12000+ | 0.039 EUR |
| LGE2304 |
Hersteller: LUGUANG ELECTRONIC
LGE2304-LGE SMD N channel transistors
LGE2304-LGE SMD N channel transistors
auf Bestellung 6300 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1174+ | 0.061 EUR |
| 1749+ | 0.041 EUR |
| 1846+ | 0.039 EUR |
| LGE2305 |
Hersteller: LUGUANG ELECTRONIC
LGE2305-LGE SMD P channel transistors
LGE2305-LGE SMD P channel transistors
auf Bestellung 3515 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 445+ | 0.16 EUR |
| 1405+ | 0.051 EUR |
| 1484+ | 0.048 EUR |
| LGE2312 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 605+ | 0.12 EUR |
| 965+ | 0.074 EUR |
| 1070+ | 0.067 EUR |
| 1215+ | 0.059 EUR |
| 3000+ | 0.056 EUR |
| LGE2312 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3970 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 605+ | 0.12 EUR |
| 965+ | 0.074 EUR |
| 1070+ | 0.067 EUR |
| 1215+ | 0.059 EUR |
| 3000+ | 0.056 EUR |
| LGE3M40120Q |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LGEA1117-3.3 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 0.22 EUR |
| 520+ | 0.14 EUR |
| 625+ | 0.12 EUR |
| 730+ | 0.098 EUR |
| LGEA1117-5.0 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 0.22 EUR |
| 515+ | 0.14 EUR |
| 620+ | 0.12 EUR |
| 730+ | 0.099 EUR |
| 1000+ | 0.093 EUR |
| LGEA1117-ADJ |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 350+ | 0.21 EUR |
| 540+ | 0.13 EUR |
| 645+ | 0.11 EUR |
| 765+ | 0.094 EUR |
| LGEA1117-3.3 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 0.22 EUR |
| 520+ | 0.14 EUR |
| 625+ | 0.12 EUR |
| 730+ | 0.098 EUR |
| 1000+ | 0.092 EUR |
| 2000+ | 0.083 EUR |
| LGEA1117-5.0 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1195 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 330+ | 0.22 EUR |
| 515+ | 0.14 EUR |
| 620+ | 0.12 EUR |
| 730+ | 0.099 EUR |
| 1000+ | 0.093 EUR |
| 2000+ | 0.084 EUR |
| LGEA1117-ADJ |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 350+ | 0.21 EUR |
| 540+ | 0.13 EUR |
| 645+ | 0.11 EUR |
| 765+ | 0.094 EUR |
| 1000+ | 0.088 EUR |
| 2000+ | 0.08 EUR |
| 5000+ | 0.078 EUR |
| LGEGB15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.63 EUR |
| 124+ | 0.58 EUR |
| 400+ | 0.54 EUR |
| LGEGB15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.63 EUR |
| 124+ | 0.58 EUR |
| 400+ | 0.54 EUR |
| 800+ | 0.53 EUR |
| LGEGF15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| LGEGF15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 250+ | 0.54 EUR |
| 1000+ | 0.53 EUR |
| LGEGP15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 250+ | 0.54 EUR |
| LGEGP15N65T2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Turn-off time: 150ns
Turn-on time: 40ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 452 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 102+ | 0.7 EUR |
| 115+ | 0.62 EUR |
| 124+ | 0.58 EUR |
| 250+ | 0.54 EUR |
| 1000+ | 0.53 EUR |
| LGEGW100N65FP |
Hersteller: LUGUANG ELECTRONIC
LGEGW100N65FP THT IGBT transistors
LGEGW100N65FP THT IGBT transistors
auf Bestellung 118 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 7.65 EUR |
| 14+ | 5.21 EUR |
| 15+ | 4.92 EUR |
| 450+ | 4.73 EUR |
| LGEGW15N120TS |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 35+ | 2.07 EUR |
| 39+ | 1.86 EUR |
| 42+ | 1.72 EUR |
| 120+ | 1.6 EUR |
| 240+ | 1.59 EUR |
| LGEGW15N120TS |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.32 EUR |
| 35+ | 2.07 EUR |
| 39+ | 1.86 EUR |
| 42+ | 1.72 EUR |
| 120+ | 1.6 EUR |
| 240+ | 1.59 EUR |
| LGEGW20N65SEK |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 144 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.73 EUR |
| 120+ | 1.62 EUR |
| LGEGW20N65SEK |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 144 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.73 EUR |
| 120+ | 1.62 EUR |
| 240+ | 1.59 EUR |
| LGEGW25N120S |
Hersteller: LUGUANG ELECTRONIC
LGEGW25N120S THT IGBT transistors
LGEGW25N120S THT IGBT transistors
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 24+ | 3.09 EUR |
| 35+ | 2.1 EUR |
| 36+ | 1.99 EUR |
| 450+ | 1.9 EUR |
| LGEGW40N120F |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| 120+ | 3.23 EUR |
| LGEGW40N120F |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Power dissipation: 110W
Case: TO247
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 134ns
Turn-off time: 503ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| 120+ | 3.23 EUR |
| 240+ | 3.16 EUR |
| LGEGW40N120F2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| LGEGW40N120F2 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Power dissipation: 417W
Case: TO247
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 135ns
Turn-off time: 270ns
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| 120+ | 3.23 EUR |
| 240+ | 3.16 EUR |
| LGEGW40N120TS |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| 120+ | 3.23 EUR |
| LGEGW40N120TS |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Power dissipation: 300W
Case: TO247
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 40A
Collector-emitter voltage: 1.2kV
Turn-on time: 121ns
Turn-off time: 310ns
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.69 EUR |
| 17+ | 4.22 EUR |
| 20+ | 3.73 EUR |
| 30+ | 3.46 EUR |
| 120+ | 3.23 EUR |
| 240+ | 3.16 EUR |
| LGEGW40N65F1 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 68 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.73 EUR |
| LGEGW40N65F1 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 39+ | 1.87 EUR |
| 42+ | 1.73 EUR |
| 120+ | 1.62 EUR |
| 240+ | 1.59 EUR |
| LGEGW50N65F1A |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| LGEGW50N65F1A |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 92 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 120+ | 2.03 EUR |
| 240+ | 1.96 EUR |
| LGEGW50N65SEK |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 120+ | 2.03 EUR |
| LGEGW50N65SEK |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 120+ | 2.03 EUR |
| 240+ | 1.96 EUR |
| LGEGW50N65SEU |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 120+ | 2.03 EUR |
| LGEGW50N65SEU |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 2.93 EUR |
| 28+ | 2.63 EUR |
| 31+ | 2.32 EUR |
| 34+ | 2.16 EUR |
| 120+ | 2.03 EUR |
| 240+ | 1.96 EUR |
| LGEGW60N65SEU |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
auf Bestellung 113 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 24+ | 3.09 EUR |
| 27+ | 2.75 EUR |
| 30+ | 2.53 EUR |
| LGEGW60N65SEU |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
Turn-off time: 256ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 21+ | 3.42 EUR |
| 24+ | 3.09 EUR |
| 27+ | 2.75 EUR |
| 30+ | 2.53 EUR |
| 120+ | 2.37 EUR |
| 240+ | 2.32 EUR |
| LGEGW75N65F |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 18+ | 3.98 EUR |
| 21+ | 3.5 EUR |
| 30+ | 3.26 EUR |
| LGEGW75N65F |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Turn-off time: 274ns
Turn-on time: 161ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 115 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 18+ | 3.98 EUR |
| 21+ | 3.5 EUR |
| 30+ | 3.26 EUR |
| 120+ | 3.05 EUR |
| 240+ | 2.97 EUR |
| LGEGW75N65FP |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-off time: 225ns
Turn-on time: 215ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Collector-emitter voltage: 650V
auf Bestellung 432 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.36 EUR |
| 19+ | 3.93 EUR |
| 21+ | 3.46 EUR |
| 30+ | 3.23 EUR |
| 120+ | 3.02 EUR |
| 240+ | 2.93 EUR |
| LGEGW75N65S |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 126 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 18+ | 3.98 EUR |
| 21+ | 3.5 EUR |
| 30+ | 3.26 EUR |
| 120+ | 3.05 EUR |
| LGEGW75N65S |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-off time: 348ns
Turn-on time: 156ns
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Collector-emitter voltage: 650V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 126 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 4.4 EUR |
| 18+ | 3.98 EUR |
| 21+ | 3.5 EUR |
| 30+ | 3.26 EUR |
| 120+ | 3.05 EUR |
| 240+ | 2.97 EUR |
| LGET1117-3.3 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
auf Bestellung 2960 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 545+ | 0.13 EUR |
| 655+ | 0.11 EUR |
| 775+ | 0.093 EUR |
| 1000+ | 0.088 EUR |
| 2000+ | 0.079 EUR |
| LGET1117-5.0 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1983 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 325+ | 0.22 EUR |
| 510+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| LGET1117-ADJ |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
auf Bestellung 3686 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 325+ | 0.22 EUR |
| 505+ | 0.14 EUR |
| 605+ | 0.12 EUR |
| 710+ | 0.1 EUR |
| 1000+ | 0.095 EUR |
| 2000+ | 0.086 EUR |
| LGET1117-3.3 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Tolerance: ±1%
Voltage drop: 1.15V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2960 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 355+ | 0.2 EUR |
| 545+ | 0.13 EUR |
| 655+ | 0.11 EUR |
| 775+ | 0.093 EUR |
| 1000+ | 0.088 EUR |
| 2000+ | 0.079 EUR |
| 4000+ | 0.077 EUR |
| LGET1117-5.0 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1983 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 325+ | 0.22 EUR |
| 510+ | 0.14 EUR |
| 610+ | 0.12 EUR |
| 715+ | 0.1 EUR |
| 1000+ | 0.094 EUR |
| 2000+ | 0.085 EUR |
| 4000+ | 0.084 EUR |
| LGET1117-ADJ |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3686 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 325+ | 0.22 EUR |
| 505+ | 0.14 EUR |
| 605+ | 0.12 EUR |
| 710+ | 0.1 EUR |
| 1000+ | 0.095 EUR |
| 2000+ | 0.086 EUR |
| 4000+ | 0.084 EUR |
| LL4148 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 11327 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 1112+ | 0.064 EUR |
| 1761+ | 0.041 EUR |
| 2763+ | 0.026 EUR |
| 4202+ | 0.017 EUR |
| 4630+ | 0.015 EUR |
| LL4148 |
![]() |
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11327 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 455+ | 0.16 EUR |
| 1112+ | 0.064 EUR |
| 1761+ | 0.041 EUR |
| 2763+ | 0.026 EUR |
| 4202+ | 0.017 EUR |
| 4630+ | 0.015 EUR |
| LL4150 |
![]() |
Hersteller: LUGUANG ELECTRONIC
LL4150-LGE SMD universal diodes
LL4150-LGE SMD universal diodes
auf Bestellung 15035 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1634+ | 0.044 EUR |
| 5000+ | 0.014 EUR |
| LL4151 |
![]() |
Hersteller: LUGUANG ELECTRONIC
LL4151-LGE SMD universal diodes
LL4151-LGE SMD universal diodes
auf Bestellung 17009 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4238+ | 0.017 EUR |
| 4902+ | 0.015 EUR |
| 5209+ | 0.014 EUR |
| 10000+ | 0.013 EUR |















