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KBP10 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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KTC3875 KTC3875 LUGUANG ELECTRONIC KTC3875.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
Mindestbestellmenge: 720 Stücke
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LGE206 LUGUANG ELECTRONIC Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
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LGE2300 LGE2300 LUGUANG ELECTRONIC LGE2300.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: reel; tape
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)
1480+0.049 EUR
1660+0.043 EUR
1860+0.038 EUR
3000+0.035 EUR
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LGE2301 LGE2301 LUGUANG ELECTRONIC LGE2301.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1W
auf Bestellung 2072 Stücke:
Lieferzeit 14-21 Tag (e)
1300+0.055 EUR
1560+0.046 EUR
1765+0.041 EUR
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LGE2302 LGE2302 LUGUANG ELECTRONIC LGE2302-1.2W.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
1195+0.06 EUR
1435+0.05 EUR
1520+0.047 EUR
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LGE2304 LGE2304 LUGUANG ELECTRONIC LGE2304.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Case: SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 30V
Drain current: 3.3A
Gate charge: 6.7nC
On-state resistance: 75mΩ
Power dissipation: 0.35W
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 7190 Stücke:
Lieferzeit 14-21 Tag (e)
1270+0.056 EUR
1400+0.051 EUR
1550+0.046 EUR
3000+0.041 EUR
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LGE2312 LGE2312 LUGUANG ELECTRONIC LGE2312.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Case: SOT23
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)
590+0.12 EUR
935+0.077 EUR
1040+0.069 EUR
1175+0.061 EUR
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LGE3D20065A LUGUANG ELECTRONIC LGE3D20065A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20065D LUGUANG ELECTRONIC LGE3D20065D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
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LGE3D20065H LUGUANG ELECTRONIC LGE3D20065H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
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LGE3D20120A LUGUANG ELECTRONIC LGE3D20120A.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.2V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
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LGE3D20120D LUGUANG ELECTRONIC LGE3D20120D.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
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LGE3D20120H LUGUANG ELECTRONIC LGE3D20120H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 130A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
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LGE3D20170H LUGUANG ELECTRONIC LGE3D20170H.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3M20120Q LUGUANG ELECTRONIC LGE3M20120Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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LGE3M45170B LUGUANG ELECTRONIC LGE3M45170B.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
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LGE3M45170Q LUGUANG ELECTRONIC LGE3M45170Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
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LGEA1117-1.5 LGEA1117-1.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
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LGEA1117-1.8 LGEA1117-1.8 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
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LGEA1117-2.5 LGEA1117-2.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
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LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
495+0.15 EUR
595+0.12 EUR
700+0.1 EUR
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LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
500+0.14 EUR
595+0.12 EUR
700+0.1 EUR
1000+0.096 EUR
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LGEA1117-ADJ LGEA1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
340+0.21 EUR
530+0.14 EUR
625+0.11 EUR
740+0.097 EUR
Mindestbestellmenge: 340 Stücke
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LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
98+0.73 EUR
110+0.65 EUR
119+0.6 EUR
400+0.57 EUR
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LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
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LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
99+0.73 EUR
110+0.65 EUR
119+0.6 EUR
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LGEGW100N65FP LGEGW100N65FP LUGUANG ELECTRONIC LGEGW100N65FP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
12+6.42 EUR
13+5.69 EUR
30+5.28 EUR
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LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC LGEGW15N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
33+2.2 EUR
37+1.96 EUR
40+1.82 EUR
120+1.69 EUR
240+1.66 EUR
Mindestbestellmenge: 30 Stücke
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LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 232ns
Turn-on time: 74ns
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.45 EUR
33+2.2 EUR
37+1.94 EUR
40+1.82 EUR
120+1.69 EUR
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LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC LGEGW25N120S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
33+2.17 EUR
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LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC LGEGW40N120F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Power dissipation: 110W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 107nC
Turn-on time: 134ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
15+4.82 EUR
17+4.35 EUR
19+3.83 EUR
30+3.56 EUR
120+3.32 EUR
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LGEGW40N120F2 LGEGW40N120F2 LUGUANG ELECTRONIC LGEGW40N120F2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 270ns
Power dissipation: 417W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 250nC
Turn-on time: 135ns
auf Bestellung 182 Stücke:
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15+4.96 EUR
17+4.46 EUR
19+3.95 EUR
30+3.66 EUR
120+3.42 EUR
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LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC LGEGW40N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 310ns
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 121ns
auf Bestellung 112 Stücke:
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15+4.82 EUR
17+4.35 EUR
19+3.83 EUR
30+3.56 EUR
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LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 480 Stücke:
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29+2.5 EUR
32+2.25 EUR
36+1.99 EUR
39+1.84 EUR
120+1.73 EUR
240+1.69 EUR
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LGEGW50N65F1A LGEGW50N65F1A LUGUANG ELECTRONIC LGEGW50N65F1A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
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LGEGW50N65SEK LGEGW50N65SEK LUGUANG ELECTRONIC LGEGW50N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 122 Stücke:
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27+2.75 EUR
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LGEGW50N65SEU LGEGW50N65SEU LUGUANG ELECTRONIC LGEGW50N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 146 Stücke:
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24+3.05 EUR
27+2.75 EUR
30+2.42 EUR
32+2.25 EUR
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LGEGW60N65SEU LGEGW60N65SEU LUGUANG ELECTRONIC LGEGW60N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
auf Bestellung 79 Stücke:
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23+3.23 EUR
25+2.87 EUR
30+2.66 EUR
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LGEGW75N65F LGEGW75N65F LUGUANG ELECTRONIC LGEGW75N65F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
auf Bestellung 115 Stücke:
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16+4.58 EUR
18+4.13 EUR
20+3.65 EUR
30+3.4 EUR
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LGEGW75N65FP LGEGW75N65FP LUGUANG ELECTRONIC LGEGW75N65FP.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.69 EUR
17+4.25 EUR
20+3.75 EUR
30+3.49 EUR
120+3.26 EUR
240+3.16 EUR
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LGEGW75N65S LGEGW75N65S LUGUANG ELECTRONIC LGEGW75N65S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
auf Bestellung 78 Stücke:
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16+4.58 EUR
18+4.13 EUR
20+3.65 EUR
30+3.4 EUR
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LGET1117-1.5 LGET1117-1.5 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
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LGET1117-1.8 LGET1117-1.8 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
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LGET1117-3.3 LGET1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Voltage drop: 1.15V
Tolerance: ±1%
auf Bestellung 2213 Stücke:
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345+0.21 EUR
535+0.13 EUR
640+0.11 EUR
760+0.095 EUR
1000+0.089 EUR
2000+0.08 EUR
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LGET1117-5.0 LGET1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1733 Stücke:
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315+0.23 EUR
490+0.15 EUR
590+0.12 EUR
690+0.1 EUR
1000+0.097 EUR
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LGET1117-ADJ LGET1117-ADJ LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 3466 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
495+0.15 EUR
590+0.12 EUR
695+0.1 EUR
1000+0.097 EUR
2000+0.088 EUR
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LL4148 LL4148 LUGUANG ELECTRONIC LL4448-LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
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LL4448 LL4448 LUGUANG ELECTRONIC LL4448-LL4148.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 275 Stücke:
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275+0.26 EUR
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M4 M4 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
auf Bestellung 605 Stücke:
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M6 M6 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
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M7 M7 LUGUANG ELECTRONIC M1-M7.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 1849 Stücke:
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1640+0.044 EUR
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MB05F MB05F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 8804 Stücke:
Lieferzeit 14-21 Tag (e)
785+0.092 EUR
1360+0.053 EUR
1510+0.047 EUR
1710+0.042 EUR
5000+0.041 EUR
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MB05S MB05S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6563 Stücke:
Lieferzeit 14-21 Tag (e)
425+0.17 EUR
745+0.096 EUR
1420+0.05 EUR
1575+0.045 EUR
3000+0.04 EUR
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MB10F MB10F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB10M MB10M LUGUANG ELECTRONIC MB2M-MB10M.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
auf Bestellung 5322 Stücke:
Lieferzeit 14-21 Tag (e)
425+0.17 EUR
985+0.073 EUR
1100+0.065 EUR
1245+0.057 EUR
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MB10S MB10S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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MB2F MB2F LUGUANG ELECTRONIC MB05F-MB10F.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
760+0.094 EUR
1335+0.054 EUR
1480+0.048 EUR
1680+0.043 EUR
5000+0.042 EUR
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MB2S MB2S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2230 Stücke:
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795+0.09 EUR
1305+0.055 EUR
1450+0.049 EUR
1640+0.044 EUR
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MB4S MB4S LUGUANG ELECTRONIC MB05S-MB10S.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3480 Stücke:
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715+0.1 EUR
1320+0.054 EUR
1465+0.049 EUR
1660+0.043 EUR
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KBP10
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 50A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 2A
Max. forward impulse current: 50A
Version: flat
Case: KBP
Electrical mounting: THT
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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KTC3875 KTC3875.pdf
KTC3875
Hersteller: LUGUANG ELECTRONIC
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 0.15A; 0.15W; SOT23
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.15A
Power dissipation: 0.15W
Case: SOT23
Current gain: 70...700
Mounting: SMD
Frequency: 80MHz
auf Bestellung 2250 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
720+0.1 EUR
1160+0.062 EUR
1290+0.056 EUR
1450+0.049 EUR
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LGE206
Hersteller: LUGUANG ELECTRONIC
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 2A; Ifsm: 60A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 2A
Max. forward impulse current: 60A
Version: flat
Case: D3K
Electrical mounting: THT
Max. forward voltage: 1.05V
Produkt ist nicht verfügbar
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LGE2300 LGE2300.pdf
LGE2300
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4A; 1.25W; SOT23
Polarisation: unipolar
Case: SOT23
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 11nC
On-state resistance: 32mΩ
Power dissipation: 1.25W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of package: reel; tape
auf Bestellung 3640 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1480+0.049 EUR
1660+0.043 EUR
1860+0.038 EUR
3000+0.035 EUR
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LGE2301 LGE2301.pdf
LGE2301
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1W
auf Bestellung 2072 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1300+0.055 EUR
1560+0.046 EUR
1765+0.041 EUR
Mindestbestellmenge: 1300 Stücke
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LGE2302 LGE2302-1.2W.pdf
LGE2302
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.35W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1520 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1195+0.06 EUR
1435+0.05 EUR
1520+0.047 EUR
Mindestbestellmenge: 1195 Stücke
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LGE2304 LGE2304.pdf
LGE2304
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.3A; 0.35W; SOT23
Case: SOT23
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Mounting: SMD
Drain-source voltage: 30V
Drain current: 3.3A
Gate charge: 6.7nC
On-state resistance: 75mΩ
Power dissipation: 0.35W
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 7190 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1270+0.056 EUR
1400+0.051 EUR
1550+0.046 EUR
3000+0.041 EUR
Mindestbestellmenge: 1270 Stücke
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LGE2312 LGE2312.pdf
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.9A
Case: SOT23
On-state resistance: 31mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2090 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
590+0.12 EUR
935+0.077 EUR
1040+0.069 EUR
1175+0.061 EUR
Mindestbestellmenge: 590 Stücke
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LGE3D20065A LGE3D20065A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 250uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3D20065D LGE3D20065D.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; Ir: 10uA
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 10µA
Max. forward voltage: 1.65V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 650V
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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LGE3D20065H LGE3D20065H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 250uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 0.25mA
Max. forward voltage: 1.7V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 110A
Max. off-state voltage: 650V
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3D20120A LGE3D20120A.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO220-2; Ir: 50uA
Case: TO220-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.2V
Load current: 20A
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3D20120D LGE3D20120D.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 30µA
Max. forward voltage: 2V
Load current: 10A x2
Max. forward impulse current: 160A
Max. off-state voltage: 1.2kV
Semiconductor structure: common cathode; double
Produkt ist nicht verfügbar
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LGE3D20120H LGE3D20120H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2V
Load current: 20A
Max. load current: 100A
Max. forward impulse current: 130A
Max. off-state voltage: 1.2kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3D20170H LGE3D20170H.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.7kV; 20A; TO247-2; Ir: 50uA
Case: TO247-2
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 50µA
Max. forward voltage: 2.3V
Load current: 20A
Max. load current: 140A
Max. forward impulse current: 190A
Max. off-state voltage: 1.7kV
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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LGE3M20120Q LGE3M20120Q.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 71A; 428W; TO247-4
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 71A
Power dissipation: 428W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 254nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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LGE3M45170B LGE3M45170B.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170Q LGE3M45170Q.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Kind of channel: enhancement
Mounting: THT
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Case: TO247-4
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 54nC
On-state resistance: 90mΩ
Drain current: 48A
Pulsed drain current: 160A
Power dissipation: 520W
Drain-source voltage: 1.7kV
Produkt ist nicht verfügbar
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LGEA1117-1.5 LGEx1117x_SER.pdf
LGEA1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGEA1117-1.8 LGEx1117x_SER.pdf
LGEA1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGEA1117-2.5 LGEx1117x_SER.pdf
LGEA1117-2.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
320+0.23 EUR
495+0.15 EUR
595+0.12 EUR
700+0.1 EUR
Mindestbestellmenge: 320 Stücke
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LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1160 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
325+0.22 EUR
500+0.14 EUR
595+0.12 EUR
700+0.1 EUR
1000+0.096 EUR
Mindestbestellmenge: 325 Stücke
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LGEA1117-ADJ LGEx1117x_SER.pdf
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 920 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
340+0.21 EUR
530+0.14 EUR
625+0.11 EUR
740+0.097 EUR
Mindestbestellmenge: 340 Stücke
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LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
88+0.82 EUR
98+0.73 EUR
110+0.65 EUR
119+0.6 EUR
400+0.57 EUR
Mindestbestellmenge: 88 Stücke
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LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
54+1.33 EUR
Mindestbestellmenge: 54 Stücke
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LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
88+0.82 EUR
99+0.73 EUR
110+0.65 EUR
119+0.6 EUR
Mindestbestellmenge: 88 Stücke
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LGEGW100N65FP LGEGW100N65FP.pdf
LGEGW100N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 100A; 500W; TO247PLUS
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247PLUS
Mounting: THT
Gate charge: 135nC
Kind of package: tube
Turn-on time: 205ns
Turn-off time: 375ns
Gate-emitter voltage: ±20V
Features of semiconductor devices: integrated anti-parallel diode
Collector current: 100A
Pulsed collector current: 300A
Collector-emitter voltage: 650V
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
10+7.15 EUR
12+6.42 EUR
13+5.69 EUR
30+5.28 EUR
Mindestbestellmenge: 10 Stücke
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LGEGW15N120TS LGEGW15N120TS.pdf
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.45 EUR
33+2.2 EUR
37+1.96 EUR
40+1.82 EUR
120+1.69 EUR
240+1.66 EUR
Mindestbestellmenge: 30 Stücke
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LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 20A
Power dissipation: 82W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 82nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 232ns
Turn-on time: 74ns
auf Bestellung 135 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
30+2.45 EUR
33+2.2 EUR
37+1.94 EUR
40+1.82 EUR
120+1.69 EUR
Mindestbestellmenge: 30 Stücke
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LGEGW25N120S LGEGW25N120S.pdf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
33+2.17 EUR
Mindestbestellmenge: 25 Stücke
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LGEGW40N120F LGEGW40N120F.pdf
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 503ns
Power dissipation: 110W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 107nC
Turn-on time: 134ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.82 EUR
17+4.35 EUR
19+3.83 EUR
30+3.56 EUR
120+3.32 EUR
Mindestbestellmenge: 15 Stücke
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LGEGW40N120F2 LGEGW40N120F2.pdf
LGEGW40N120F2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 270ns
Power dissipation: 417W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 250nC
Turn-on time: 135ns
auf Bestellung 182 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.96 EUR
17+4.46 EUR
19+3.95 EUR
30+3.66 EUR
120+3.42 EUR
Mindestbestellmenge: 15 Stücke
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LGEGW40N120TS LGEGW40N120TS.pdf
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Collector current: 40A
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 310ns
Power dissipation: 300W
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Kind of package: tube
Mounting: THT
Gate charge: 0.21µC
Turn-on time: 121ns
auf Bestellung 112 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
15+4.82 EUR
17+4.35 EUR
19+3.83 EUR
30+3.56 EUR
Mindestbestellmenge: 15 Stücke
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LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
29+2.5 EUR
32+2.25 EUR
36+1.99 EUR
39+1.84 EUR
120+1.73 EUR
240+1.69 EUR
Mindestbestellmenge: 29 Stücke
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LGEGW50N65F1A LGEGW50N65F1A.pdf
LGEGW50N65F1A
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
19+3.76 EUR
Mindestbestellmenge: 19 Stücke
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LGEGW50N65SEK LGEGW50N65SEK.pdf
LGEGW50N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 122 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.05 EUR
27+2.75 EUR
30+2.42 EUR
32+2.25 EUR
120+2.12 EUR
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LGEGW50N65SEU LGEGW50N65SEU.pdf
LGEGW50N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
24+3.05 EUR
27+2.75 EUR
30+2.42 EUR
32+2.25 EUR
120+2.12 EUR
Mindestbestellmenge: 24 Stücke
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LGEGW60N65SEU LGEGW60N65SEU.pdf
LGEGW60N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 60A; 151W; TO247
Type of transistor: IGBT
Case: TO247
Mounting: THT
Kind of package: tube
Turn-off time: 256ns
Gate-emitter voltage: ±20V
Power dissipation: 151W
Collector current: 60A
Pulsed collector current: 240A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 0.21µC
Turn-on time: 123ns
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
20+3.59 EUR
23+3.23 EUR
25+2.87 EUR
30+2.66 EUR
Mindestbestellmenge: 20 Stücke
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LGEGW75N65F LGEGW75N65F.pdf
LGEGW75N65F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 71W; TO247
Type of transistor: IGBT
Power dissipation: 71W
Case: TO247
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 161ns
Turn-off time: 274ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.58 EUR
18+4.13 EUR
20+3.65 EUR
30+3.4 EUR
Mindestbestellmenge: 16 Stücke
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LGEGW75N65FP LGEGW75N65FP.pdf
LGEGW75N65FP
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 500W; TO247
Type of transistor: IGBT
Power dissipation: 500W
Case: TO247
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 215ns
Turn-off time: 225ns
Collector current: 75A
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
auf Bestellung 347 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.69 EUR
17+4.25 EUR
20+3.75 EUR
30+3.49 EUR
120+3.26 EUR
240+3.16 EUR
Mindestbestellmenge: 16 Stücke
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LGEGW75N65S LGEGW75N65S.pdf
LGEGW75N65S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 250W; TO247
Type of transistor: IGBT
Power dissipation: 250W
Case: TO247
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 156ns
Turn-off time: 348ns
Collector current: 75A
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
16+4.58 EUR
18+4.13 EUR
20+3.65 EUR
30+3.4 EUR
Mindestbestellmenge: 16 Stücke
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LGET1117-1.5 LGEx1117x_SER.pdf
LGET1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGET1117-1.8 LGEx1117x_SER.pdf
LGET1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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LGET1117-3.3 LGEx1117x_SER.pdf
LGET1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 3.3V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Number of channels: 1
Input voltage: 4.75...10V
Voltage drop: 1.15V
Tolerance: ±1%
auf Bestellung 2213 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
345+0.21 EUR
535+0.13 EUR
640+0.11 EUR
760+0.095 EUR
1000+0.089 EUR
2000+0.08 EUR
Mindestbestellmenge: 345 Stücke
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LGET1117-5.0 LGEx1117x_SER.pdf
LGET1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT223; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1733 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
315+0.23 EUR
490+0.15 EUR
590+0.12 EUR
690+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 315 Stücke
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LGET1117-ADJ LGEx1117x_SER.pdf
LGET1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 3466 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
320+0.23 EUR
495+0.15 EUR
590+0.12 EUR
695+0.1 EUR
1000+0.097 EUR
2000+0.088 EUR
Mindestbestellmenge: 320 Stücke
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LL4148 LL4448-LL4148.pdf
LL4148
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.3A
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LL4448 LL4448-LL4148.pdf
LL4448
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; MiniMELF glass; Ufmax: 0.62V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Case: MiniMELF glass
Max. forward voltage: 0.62V
Max. load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 275 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
275+0.26 EUR
Mindestbestellmenge: 275 Stücke
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M4 M1-M7.pdf
M4
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
auf Bestellung 605 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 10 Stücke
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M6 M1-M7.pdf
M6
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward impulse current: 30A
Semiconductor structure: single diode
Case: SMAJ
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 1.1V
Load current: 1A
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 20 Stücke
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M7 M1-M7.pdf
M7
Hersteller: LUGUANG ELECTRONIC
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMAJ; Ufmax: 1.1V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Case: SMAJ
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Kind of package: reel; tape
auf Bestellung 1849 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
1640+0.044 EUR
Mindestbestellmenge: 1640 Stücke
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MB05F MB05F-MB10F.pdf
MB05F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 8804 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
785+0.092 EUR
1360+0.053 EUR
1510+0.047 EUR
1710+0.042 EUR
5000+0.041 EUR
Mindestbestellmenge: 785 Stücke
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MB05S MB05S-MB10S.pdf
MB05S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 6563 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
425+0.17 EUR
745+0.096 EUR
1420+0.05 EUR
1575+0.045 EUR
3000+0.04 EUR
Mindestbestellmenge: 425 Stücke
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MB10F MB05F-MB10F.pdf
MB10F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 4 Stücke
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MB10M MB2M-MB10M.pdf
MB10M
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBM; THT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBM
Electrical mounting: THT
Kind of package: bulk
Features of semiconductor devices: glass passivated
auf Bestellung 5322 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
425+0.17 EUR
985+0.073 EUR
1100+0.065 EUR
1245+0.057 EUR
Mindestbestellmenge: 425 Stücke
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MB10S MB05S-MB10S.pdf
MB10S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 1kV; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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MB2F MB05F-MB10F.pdf
MB2F
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBF; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBF
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
760+0.094 EUR
1335+0.054 EUR
1480+0.048 EUR
1680+0.043 EUR
5000+0.042 EUR
Mindestbestellmenge: 760 Stücke
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MB2S MB05S-MB10S.pdf
MB2S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 200V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 200V
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
auf Bestellung 2230 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
795+0.09 EUR
1305+0.055 EUR
1450+0.049 EUR
1640+0.044 EUR
Mindestbestellmenge: 795 Stücke
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MB4S MB05S-MB10S.pdf
MB4S
Hersteller: LUGUANG ELECTRONIC
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 400V; If: 0.5A; Ifsm: 35A; MBS; SMT
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.4kV
Load current: 0.5A
Max. forward impulse current: 35A
Case: MBS
Electrical mounting: SMT
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
715+0.1 EUR
1320+0.054 EUR
1465+0.049 EUR
1660+0.043 EUR
Mindestbestellmenge: 715 Stücke
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