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HER306 LUGUANG ELECTRONIC HER301G-HER308G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
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HER307 LUGUANG ELECTRONIC HER301G-HER308G.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER308 HER308 LUGUANG ELECTRONIC HER301G-HER308G.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
194+0.37 EUR
345+0.21 EUR
569+0.13 EUR
881+0.081 EUR
1007+0.071 EUR
1250+0.064 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
HER308 HER308 LUGUANG ELECTRONIC HER301G-HER308G.pdf description Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
194+0.37 EUR
345+0.21 EUR
569+0.13 EUR
881+0.081 EUR
1007+0.071 EUR
1250+0.064 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
HER504 LUGUANG ELECTRONIC HER501G-HER508G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
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HER508 HER508 LUGUANG ELECTRONIC HER501G-HER508G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
166+0.43 EUR
295+0.24 EUR
485+0.15 EUR
750+0.095 EUR
858+0.083 EUR
1250+0.077 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
HER508 HER508 LUGUANG ELECTRONIC HER501G-HER508G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.72 EUR
166+0.43 EUR
295+0.24 EUR
485+0.15 EUR
750+0.095 EUR
858+0.083 EUR
1250+0.077 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
HER604 LUGUANG ELECTRONIC HER601G-HER608G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER604S LUGUANG ELECTRONIC HER601S-HER608S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER605 LUGUANG ELECTRONIC HER601G-HER608G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER605S LUGUANG ELECTRONIC HER601S-HER608S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
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HER606 LUGUANG ELECTRONIC HER601G-HER608G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER606S LUGUANG ELECTRONIC HER601S-HER608S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER608 HER608 LUGUANG ELECTRONIC HER601G-HER608G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
208+0.34 EUR
410+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
HER608 HER608 LUGUANG ELECTRONIC HER601G-HER608G.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
208+0.34 EUR
410+0.17 EUR
500+0.14 EUR
1000+0.086 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
HER608S HER608S LUGUANG ELECTRONIC HER601S-HER608S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
156+0.46 EUR
278+0.26 EUR
455+0.16 EUR
705+0.1 EUR
807+0.089 EUR
1250+0.083 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
HER608S HER608S LUGUANG ELECTRONIC HER601S-HER608S.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
93+0.77 EUR
156+0.46 EUR
278+0.26 EUR
455+0.16 EUR
705+0.1 EUR
807+0.089 EUR
1250+0.083 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
KTC3875 LUGUANG ELECTRONIC KTC3875-LGE NPN SMD transistors
auf Bestellung 2330 Stücke:
Lieferzeit 7-14 Tag (e)
637+0.11 EUR
1498+0.048 EUR
1583+0.045 EUR
Mindestbestellmenge: 637
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LGE201 LUGUANG ELECTRONIC LGE201-LGE Flat single phase diode bridge rectif.
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
463+0.15 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 463
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LGE2300 LUGUANG ELECTRONIC LGE2300-LGE SMD N channel transistors
auf Bestellung 6240 Stücke:
Lieferzeit 7-14 Tag (e)
1306+0.055 EUR
1856+0.039 EUR
1964+0.036 EUR
Mindestbestellmenge: 1306
Im Einkaufswagen  Stück im Wert von  UAH
LGE2301 LGE2301 LUGUANG ELECTRONIC LGE2301.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 4007 Stücke:
Lieferzeit 14-21 Tag (e)
1335+0.054 EUR
1615+0.044 EUR
1825+0.039 EUR
3000+0.038 EUR
Mindestbestellmenge: 1335
Im Einkaufswagen  Stück im Wert von  UAH
LGE2301 LGE2301 LUGUANG ELECTRONIC LGE2301.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4007 Stücke:
Lieferzeit 7-14 Tag (e)
1335+0.054 EUR
1615+0.044 EUR
1825+0.039 EUR
3000+0.038 EUR
Mindestbestellmenge: 1335
Im Einkaufswagen  Stück im Wert von  UAH
LGE2302 LUGUANG ELECTRONIC LGE2302-LGE SMD N channel transistors
auf Bestellung 1640 Stücke:
Lieferzeit 7-14 Tag (e)
1073+0.067 EUR
1640+0.043 EUR
12000+0.04 EUR
Mindestbestellmenge: 1073
Im Einkaufswagen  Stück im Wert von  UAH
LGE2304 LUGUANG ELECTRONIC LGE2304-LGE SMD N channel transistors
auf Bestellung 6160 Stücke:
Lieferzeit 7-14 Tag (e)
1155+0.062 EUR
1743+0.041 EUR
1846+0.039 EUR
Mindestbestellmenge: 1155
Im Einkaufswagen  Stück im Wert von  UAH
LGE2305 LUGUANG ELECTRONIC LGE2305-LGE SMD P channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
15+4.76 EUR
335+0.21 EUR
920+0.077 EUR
12000+0.049 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 LGE2312 LUGUANG ELECTRONIC LGE2312.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3920 Stücke:
Lieferzeit 14-21 Tag (e)
610+0.12 EUR
970+0.074 EUR
1080+0.066 EUR
1220+0.059 EUR
3000+0.056 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 LGE2312 LUGUANG ELECTRONIC LGE2312.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3920 Stücke:
Lieferzeit 7-14 Tag (e)
610+0.12 EUR
970+0.074 EUR
1080+0.066 EUR
1220+0.059 EUR
3000+0.056 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40120Q LUGUANG ELECTRONIC LGE3M40120Q.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
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LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
325+0.22 EUR
505+0.14 EUR
610+0.12 EUR
715+0.1 EUR
Mindestbestellmenge: 325
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)
320+0.23 EUR
495+0.14 EUR
590+0.12 EUR
700+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
325+0.22 EUR
505+0.14 EUR
610+0.12 EUR
715+0.1 EUR
1000+0.094 EUR
2000+0.085 EUR
5000+0.083 EUR
Mindestbestellmenge: 325
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC LGEx1117x_SER.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1195 Stücke:
Lieferzeit 7-14 Tag (e)
320+0.23 EUR
495+0.14 EUR
590+0.12 EUR
700+0.1 EUR
1000+0.097 EUR
2000+0.087 EUR
5000+0.085 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ LUGUANG ELECTRONIC LGEA1117-ADJ-LGE LDO adjustable voltage regulators
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)
349+0.21 EUR
828+0.086 EUR
876+0.082 EUR
10000+0.079 EUR
Mindestbestellmenge: 349
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
400+0.56 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGB15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
400+0.56 EUR
800+0.55 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGF15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 90
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LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGP15N65T2 LUGUANG ELECTRONIC LGEGx15N65.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 452 Stücke:
Lieferzeit 7-14 Tag (e)
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
1000+0.55 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP LUGUANG ELECTRONIC LGEGW100N65FP THT IGBT transistors
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)
10+7.86 EUR
14+5.18 EUR
15+4.9 EUR
450+4.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC LGEGW15N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
40+1.79 EUR
120+1.66 EUR
240+1.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS LUGUANG ELECTRONIC LGEGW15N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 378 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
40+1.79 EUR
120+1.66 EUR
240+1.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.36 EUR
34+2.12 EUR
39+1.87 EUR
41+1.74 EUR
120+1.63 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK LUGUANG ELECTRONIC LGEGW20N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.36 EUR
34+2.12 EUR
39+1.87 EUR
41+1.74 EUR
120+1.63 EUR
240+1.59 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC LGEGW25N120S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.89 EUR
28+2.59 EUR
32+2.29 EUR
34+2.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S LUGUANG ELECTRONIC LGEGW25N120S.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.89 EUR
28+2.59 EUR
32+2.29 EUR
34+2.13 EUR
120+1.99 EUR
240+1.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC LGEGW40N120F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F LUGUANG ELECTRONIC LGEGW40N120F.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LGEGW40N120F2 LUGUANG ELECTRONIC LGEGW40N120F2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LGEGW40N120F2 LUGUANG ELECTRONIC LGEGW40N120F2.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC LGEGW40N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS LUGUANG ELECTRONIC LGEGW40N120TS.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1 LUGUANG ELECTRONIC LGEGW40N65F1.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.39 EUR
120+1.63 EUR
240+1.59 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65F1A LGEGW50N65F1A LUGUANG ELECTRONIC LGEGW50N65F1A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65F1A LGEGW50N65F1A LUGUANG ELECTRONIC LGEGW50N65F1A.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEK LGEGW50N65SEK LUGUANG ELECTRONIC LGEGW50N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEK LGEGW50N65SEK LUGUANG ELECTRONIC LGEGW50N65SEK.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEU LGEGW50N65SEU LUGUANG ELECTRONIC LGEGW50N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEU LGEGW50N65SEU LUGUANG ELECTRONIC LGEGW50N65SEU.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
HER306 HER301G-HER308G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER307 description HER301G-HER308G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER308 description HER301G-HER308G.pdf
HER308
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
194+0.37 EUR
345+0.21 EUR
569+0.13 EUR
881+0.081 EUR
1007+0.071 EUR
1250+0.064 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
HER308 description HER301G-HER308G.pdf
HER308
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 125A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Case: DO201AD
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
120+0.6 EUR
194+0.37 EUR
345+0.21 EUR
569+0.13 EUR
881+0.081 EUR
1007+0.071 EUR
1250+0.064 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
HER504 HER501G-HER508G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 5A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 5A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER508 HER501G-HER508G.pdf
HER508
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
166+0.43 EUR
295+0.24 EUR
485+0.15 EUR
750+0.095 EUR
858+0.083 EUR
1250+0.077 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
HER508 HER501G-HER508G.pdf
HER508
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
100+0.72 EUR
166+0.43 EUR
295+0.24 EUR
485+0.15 EUR
750+0.095 EUR
858+0.083 EUR
1250+0.077 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
HER604 HER601G-HER608G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER604S HER601S-HER608S.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 300V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 300V
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER605 HER601G-HER608G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER605S HER601S-HER608S.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.3V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.3V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER606 HER601G-HER608G.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER606S HER601S-HER608S.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
HER608 HER601G-HER608G.pdf
HER608
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
208+0.34 EUR
410+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
HER608 HER601G-HER608G.pdf
HER608
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; R6; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: R6
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
125+0.57 EUR
208+0.34 EUR
410+0.17 EUR
500+0.14 EUR
1000+0.086 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
HER608S HER601S-HER608S.pdf
HER608S
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
auf Bestellung 1250 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
156+0.46 EUR
278+0.26 EUR
455+0.16 EUR
705+0.1 EUR
807+0.089 EUR
1250+0.083 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
HER608S HER601S-HER608S.pdf
HER608S
Hersteller: LUGUANG ELECTRONIC
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 6A; tape; Ifsm: 200A; DO27; Ufmax: 1.7V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 6A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 200A
Case: DO27
Max. forward voltage: 1.7V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1250 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
93+0.77 EUR
156+0.46 EUR
278+0.26 EUR
455+0.16 EUR
705+0.1 EUR
807+0.089 EUR
1250+0.083 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
KTC3875
Hersteller: LUGUANG ELECTRONIC
KTC3875-LGE NPN SMD transistors
auf Bestellung 2330 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
637+0.11 EUR
1498+0.048 EUR
1583+0.045 EUR
Mindestbestellmenge: 637
Im Einkaufswagen  Stück im Wert von  UAH
LGE201
Hersteller: LUGUANG ELECTRONIC
LGE201-LGE Flat single phase diode bridge rectif.
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
463+0.15 EUR
610+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 463
Im Einkaufswagen  Stück im Wert von  UAH
LGE2300
Hersteller: LUGUANG ELECTRONIC
LGE2300-LGE SMD N channel transistors
auf Bestellung 6240 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1306+0.055 EUR
1856+0.039 EUR
1964+0.036 EUR
Mindestbestellmenge: 1306
Im Einkaufswagen  Stück im Wert von  UAH
LGE2301 LGE2301.pdf
LGE2301
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 4007 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1335+0.054 EUR
1615+0.044 EUR
1825+0.039 EUR
3000+0.038 EUR
Mindestbestellmenge: 1335
Im Einkaufswagen  Stück im Wert von  UAH
LGE2301 LGE2301.pdf
LGE2301
Hersteller: LUGUANG ELECTRONIC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: P-MOSFET
Drain-source voltage: -20V
Drain current: -3A
Gate charge: 12nC
On-state resistance: 0.14Ω
Power dissipation: 1W
Gate-source voltage: ±12V
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4007 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1335+0.054 EUR
1615+0.044 EUR
1825+0.039 EUR
3000+0.038 EUR
Mindestbestellmenge: 1335
Im Einkaufswagen  Stück im Wert von  UAH
LGE2302
Hersteller: LUGUANG ELECTRONIC
LGE2302-LGE SMD N channel transistors
auf Bestellung 1640 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1073+0.067 EUR
1640+0.043 EUR
12000+0.04 EUR
Mindestbestellmenge: 1073
Im Einkaufswagen  Stück im Wert von  UAH
LGE2304
Hersteller: LUGUANG ELECTRONIC
LGE2304-LGE SMD N channel transistors
auf Bestellung 6160 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1155+0.062 EUR
1743+0.041 EUR
1846+0.039 EUR
Mindestbestellmenge: 1155
Im Einkaufswagen  Stück im Wert von  UAH
LGE2305
Hersteller: LUGUANG ELECTRONIC
LGE2305-LGE SMD P channel transistors
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.76 EUR
335+0.21 EUR
920+0.077 EUR
12000+0.049 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 LGE2312.pdf
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 3920 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
610+0.12 EUR
970+0.074 EUR
1080+0.066 EUR
1220+0.059 EUR
3000+0.056 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
LGE2312 LGE2312.pdf
LGE2312
Hersteller: LUGUANG ELECTRONIC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 4.9A; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Drain-source voltage: 20V
Drain current: 4.9A
On-state resistance: 31mΩ
Polarisation: unipolar
Kind of channel: enhancement
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3920 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
610+0.12 EUR
970+0.074 EUR
1080+0.066 EUR
1220+0.059 EUR
3000+0.056 EUR
Mindestbestellmenge: 610
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40120Q LGE3M40120Q.pdf
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 39A; Idm: 117A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 39A
Pulsed drain current: 117A
Power dissipation: 300W
Case: TO247-4
Gate-source voltage: -5...20V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 145nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
325+0.22 EUR
505+0.14 EUR
610+0.12 EUR
715+0.1 EUR
Mindestbestellmenge: 325
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1195 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
320+0.23 EUR
495+0.14 EUR
590+0.12 EUR
700+0.1 EUR
1000+0.097 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEx1117x_SER.pdf
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
325+0.22 EUR
505+0.14 EUR
610+0.12 EUR
715+0.1 EUR
1000+0.094 EUR
2000+0.085 EUR
5000+0.083 EUR
Mindestbestellmenge: 325
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEx1117x_SER.pdf
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1195 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
320+0.23 EUR
495+0.14 EUR
590+0.12 EUR
700+0.1 EUR
1000+0.097 EUR
2000+0.087 EUR
5000+0.085 EUR
Mindestbestellmenge: 320
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
LGEA1117-ADJ-LGE LDO adjustable voltage regulators
auf Bestellung 920 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
349+0.21 EUR
828+0.086 EUR
876+0.082 EUR
10000+0.079 EUR
Mindestbestellmenge: 349
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
400+0.56 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGB15N65T2 LGEGx15N65.pdf
LGEGB15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO263
Type of transistor: IGBT
Power dissipation: 125W
Case: TO263
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
400+0.56 EUR
800+0.55 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 139 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGF15N65T2 LGEGx15N65.pdf
LGEGF15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 30.6W; TO220FP
Type of transistor: IGBT
Power dissipation: 30.6W
Case: TO220FP
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
1000+0.54 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
auf Bestellung 452 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGP15N65T2 LGEGx15N65.pdf
LGEGP15N65T2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 15A; 125W; TO220
Type of transistor: IGBT
Power dissipation: 125W
Case: TO220
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 40ns
Turn-off time: 150ns
Collector current: 15A
Gate-emitter voltage: ±20V
Pulsed collector current: 60A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 452 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
90+0.8 EUR
100+0.72 EUR
112+0.64 EUR
121+0.59 EUR
250+0.56 EUR
1000+0.55 EUR
Mindestbestellmenge: 90
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW100N65FP
Hersteller: LUGUANG ELECTRONIC
LGEGW100N65FP THT IGBT transistors
auf Bestellung 110 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+7.86 EUR
14+5.18 EUR
15+4.9 EUR
450+4.78 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS.pdf
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
40+1.79 EUR
120+1.66 EUR
240+1.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW15N120TS LGEGW15N120TS.pdf
LGEGW15N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 40W; TO247
Mounting: THT
Pulsed collector current: 45A
Collector-emitter voltage: 1.2kV
Type of transistor: IGBT
Features of semiconductor devices: integrated anti-parallel diode
Case: TO247
Kind of package: tube
Turn-on time: 50ns
Gate charge: 0.12µC
Turn-off time: 245ns
Collector current: 15A
Gate-emitter voltage: ±30V
Power dissipation: 40W
Anzahl je Verpackung: 1 Stücke
auf Bestellung 378 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.4 EUR
34+2.16 EUR
38+1.92 EUR
40+1.79 EUR
120+1.66 EUR
240+1.63 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
auf Bestellung 140 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.36 EUR
34+2.12 EUR
39+1.87 EUR
41+1.74 EUR
120+1.63 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW20N65SEK LGEGW20N65SEK.pdf
LGEGW20N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 20A; 82W; TO247
Type of transistor: IGBT
Power dissipation: 82W
Case: TO247
Mounting: THT
Kind of package: tube
Collector current: 20A
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Collector-emitter voltage: 650V
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 74ns
Gate charge: 82nC
Turn-off time: 232ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.36 EUR
34+2.12 EUR
39+1.87 EUR
41+1.74 EUR
120+1.63 EUR
240+1.59 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S.pdf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.59 EUR
32+2.29 EUR
34+2.13 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW25N120S LGEGW25N120S.pdf
LGEGW25N120S
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 100W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 100W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 80A
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Turn-on time: 57ns
Features of semiconductor devices: integrated anti-parallel diode
Turn-off time: 460ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 91 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.89 EUR
28+2.59 EUR
32+2.29 EUR
34+2.13 EUR
120+1.99 EUR
240+1.93 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F.pdf
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F LGEGW40N120F.pdf
LGEGW40N120F
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 110W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 110W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 107nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 134ns
Turn-off time: 503ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 130 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LGEGW40N120F2.pdf
LGEGW40N120F2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120F2 LGEGW40N120F2.pdf
LGEGW40N120F2
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 417W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 417W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 160A
Mounting: THT
Gate charge: 250nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 135ns
Turn-off time: 270ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS.pdf
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N120TS LGEGW40N120TS.pdf
LGEGW40N120TS
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 300W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 40A
Power dissipation: 300W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 121ns
Turn-off time: 310ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 145 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.73 EUR
17+4.26 EUR
20+3.76 EUR
30+3.49 EUR
120+3.26 EUR
240+3.19 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW40N65F1 LGEGW40N65F1.pdf
LGEGW40N65F1
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 40A; 94W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 40A
Power dissipation: 94W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 83nC
Kind of package: tube
Turn-on time: 96ns
Turn-off time: 187ns
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
30+2.39 EUR
120+1.63 EUR
240+1.59 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65F1A LGEGW50N65F1A.pdf
LGEGW50N65F1A
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65F1A LGEGW50N65F1A.pdf
LGEGW50N65F1A
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 312W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 312W
Case: TO247
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 62ns
Turn-off time: 268ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEK LGEGW50N65SEK.pdf
LGEGW50N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEK LGEGW50N65SEK.pdf
LGEGW50N65SEK
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 136 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEU LGEGW50N65SEU.pdf
LGEGW50N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
auf Bestellung 146 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
LGEGW50N65SEU LGEGW50N65SEU.pdf
LGEGW50N65SEU
Hersteller: LUGUANG ELECTRONIC
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 50A; 166W; TO247
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 50A
Power dissipation: 166W
Case: TO247
Gate-emitter voltage: ±30V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 200nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Turn-on time: 137ns
Turn-off time: 331ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 146 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.93 EUR
28+2.65 EUR
31+2.33 EUR
34+2.16 EUR
120+2.03 EUR
240+1.96 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
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