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LGE3D20120D LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Produkt ist nicht verfügbar
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LGE3D20120D LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3D20120H LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
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LGE3D20120H LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3D20170H LUGUANG ELECTRONIC LGE3D20170H THT Schottky diodes
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LGE3D30065D LUGUANG ELECTRONIC LGE3D30065D THT Schottky diodes
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LGE3D30065H LUGUANG ELECTRONIC LGE3D30065H THT Schottky diodes
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LGE3D30120D LUGUANG ELECTRONIC LGE3D30120D THT Schottky diodes
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LGE3D30120H LUGUANG ELECTRONIC LGE3D30120H THT Schottky diodes
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LGE3D40065H LUGUANG ELECTRONIC LGE3D40065H THT Schottky diodes
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LGE3D40120H LUGUANG ELECTRONIC LGE3D40120H THT Schottky diodes
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LGE3D42090H LUGUANG ELECTRONIC LGE3D42090H THT Schottky diodes
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LGE3D50120H LUGUANG ELECTRONIC LGE3D50120H THT Schottky diodes
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LGE3M14120Q LUGUANG ELECTRONIC LGE3M14120Q THT N channel transistors
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LGE3M160120B LUGUANG ELECTRONIC LGE3M160120B THT N channel transistors
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LGE3M160120E LUGUANG ELECTRONIC LGE3M160120E SMD N channel transistors
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LGE3M160120Q LUGUANG ELECTRONIC LGE3M160120Q THT N channel transistors
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LGE3M18120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Produkt ist nicht verfügbar
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LGE3M18120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3M1K170B LUGUANG ELECTRONIC LGE3M1K170B THT N channel transistors
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LGE3M20120Q LUGUANG ELECTRONIC LGE3M20120Q THT N channel transistors
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LGE3M25120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59005A3ECD6A0D6&compId=LGE3M25120Q.pdf?ci_sign=2cd22c143281fc3218b9a593938b5d20bb4d0d14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 43mΩ
Power dissipation: 370W
Drain current: 60A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
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LGE3M25120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59005A3ECD6A0D6&compId=LGE3M25120Q.pdf?ci_sign=2cd22c143281fc3218b9a593938b5d20bb4d0d14 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 43mΩ
Power dissipation: 370W
Drain current: 60A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3M28065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5900E456DCCC0D6&compId=LGE3M28065Q.pdf?ci_sign=a1455990757c088f3a58e7f743bc980a1c65426b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 39mΩ
Power dissipation: 326W
Drain current: 67A
Pulsed drain current: 211A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 163nC
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LGE3M28065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5900E456DCCC0D6&compId=LGE3M28065Q.pdf?ci_sign=a1455990757c088f3a58e7f743bc980a1c65426b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 39mΩ
Power dissipation: 326W
Drain current: 67A
Pulsed drain current: 211A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 163nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3M30065B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590192155AF40D6&compId=LGE3M30065B.pdf?ci_sign=419eaefbc6a7a91613ebced9406402b271ab904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 326W
Drain current: 64A
Pulsed drain current: 212A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 147nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590192155AF40D6&compId=LGE3M30065B.pdf?ci_sign=419eaefbc6a7a91613ebced9406402b271ab904b Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 326W
Drain current: 64A
Pulsed drain current: 212A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 147nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4924C38B14100D6&compId=LGE3M30065Q.pdf?ci_sign=b07332cf1ad1e7b76d644810126fbea3701b98ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 45mΩ
Power dissipation: 300W
Drain current: 54A
Pulsed drain current: 170A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4924C38B14100D6&compId=LGE3M30065Q.pdf?ci_sign=b07332cf1ad1e7b76d644810126fbea3701b98ae Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 45mΩ
Power dissipation: 300W
Drain current: 54A
Pulsed drain current: 170A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59024CD69EDE0D6&compId=LGE3M35065Q.pdf?ci_sign=b532f9491d978cc9af38be083602b32a400d113f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 370W
Drain current: 40A
Pulsed drain current: 130A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...18V
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59024CD69EDE0D6&compId=LGE3M35065Q.pdf?ci_sign=b532f9491d978cc9af38be083602b32a400d113f Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 370W
Drain current: 40A
Pulsed drain current: 130A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...18V
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5903052999C40D6&compId=LGE3M35120Q.pdf?ci_sign=1075c89bb29762ec661443ba4aedac7b74f03cf3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 63mΩ
Power dissipation: 300W
Drain current: 44A
Pulsed drain current: 130A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 148nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5903052999C40D6&compId=LGE3M35120Q.pdf?ci_sign=1075c89bb29762ec661443ba4aedac7b74f03cf3 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 63mΩ
Power dissipation: 300W
Drain current: 44A
Pulsed drain current: 130A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 148nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59038C173A580D6&compId=LGE3M40065B.pdf?ci_sign=7491181a615e0c3f11c7249b6c845270e503746e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59038C173A580D6&compId=LGE3M40065B.pdf?ci_sign=7491181a615e0c3f11c7249b6c845270e503746e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590433440D160D6&compId=LGE3M40065Q.pdf?ci_sign=190b5dd862dbaf09f7624cc62ad8c982924c250a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590433440D160D6&compId=LGE3M40065Q.pdf?ci_sign=190b5dd862dbaf09f7624cc62ad8c982924c250a Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40120Q LUGUANG ELECTRONIC LGE3M40120Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB49267BBF24CE0D6&compId=LGE3M45170B.pdf?ci_sign=6b3f5e4a20094785900799850c9f8bc512520ce6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB49267BBF24CE0D6&compId=LGE3M45170B.pdf?ci_sign=6b3f5e4a20094785900799850c9f8bc512520ce6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5904B0936F500D6&compId=LGE3M45170Q.pdf?ci_sign=cef1db883a6eadb4d832bbe6e44db2d3d974b215 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5904B0936F500D6&compId=LGE3M45170Q.pdf?ci_sign=cef1db883a6eadb4d832bbe6e44db2d3d974b215 Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59054FB72F840D6&compId=LGE3M50120B.pdf?ci_sign=75e93a87d679e689b5c93de67ddb827fe9d63eee Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 327W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120B LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59054FB72F840D6&compId=LGE3M50120B.pdf?ci_sign=75e93a87d679e689b5c93de67ddb827fe9d63eee Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 327W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492705F3D9800D6&compId=LGE3M50120Q.pdf?ci_sign=e5cf09086b2e65e4fb653a07c14f490eb4720f7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 344W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 344W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492705F3D9800D6&compId=LGE3M50120Q.pdf?ci_sign=e5cf09086b2e65e4fb653a07c14f490eb4720f7d Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 344W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 344W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M60065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4927F3EACA840D6&compId=LGE3M60065Q.pdf?ci_sign=907c8c1536ad74714cc94e9f74bd938f415f844e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 78nC
On-state resistance: 75mΩ
Drain current: 36A
Pulsed drain current: 97A
Power dissipation: 208W
Drain-source voltage: 650V
Kind of package: tube
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M60065Q LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4927F3EACA840D6&compId=LGE3M60065Q.pdf?ci_sign=907c8c1536ad74714cc94e9f74bd938f415f844e Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 78nC
On-state resistance: 75mΩ
Drain current: 36A
Pulsed drain current: 97A
Power dissipation: 208W
Drain-source voltage: 650V
Kind of package: tube
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M70120Q LUGUANG ELECTRONIC LGE3M70120Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M80120B LUGUANG ELECTRONIC LGE3M80120B THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M80120J LUGUANG ELECTRONIC LGE3M80120J SMD N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M80120Q LUGUANG ELECTRONIC LGE3M80120Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-1.5 LGEA1117-1.5 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-1.8 LGEA1117-1.8 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-2.5 LGEA1117-2.5 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-3.3 LGEA1117-3.3 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.24 EUR
475+0.15 EUR
570+0.13 EUR
795+0.09 EUR
840+0.086 EUR
Mindestbestellmenge: 305
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 LGEA1117-5.0 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
305+0.24 EUR
475+0.15 EUR
565+0.13 EUR
790+0.091 EUR
835+0.086 EUR
Mindestbestellmenge: 305
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ LGEA1117-ADJ LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
380+0.19 EUR
595+0.12 EUR
710+0.1 EUR
845+0.085 EUR
890+0.08 EUR
Mindestbestellmenge: 380
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-1.5 LGEA1117-1.5 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-1.8 LGEA1117-1.8 LUGUANG ELECTRONIC pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
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LGE3D20120D pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Produkt ist nicht verfügbar
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LGE3D20120D pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59182217E7440D6&compId=LGE3D20120D.pdf?ci_sign=52f6d4745eeb34f8e0f124ed252375234126d85b
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO247-3
Max. forward voltage: 2V
Max. forward impulse current: 160A
Kind of package: tube
Leakage current: 30µA
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3D20120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Produkt ist nicht verfügbar
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LGE3D20120H pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59140929B7680D6&compId=LGE3D20120H.pdf?ci_sign=fe727f90328e727d55a3978da8145e78d0c5c42c
Hersteller: LUGUANG ELECTRONIC
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ufmax: 2V
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 2V
Max. forward impulse current: 130A
Kind of package: tube
Leakage current: 50µA
Max. load current: 100A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3D20170H
Hersteller: LUGUANG ELECTRONIC
LGE3D20170H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D30065D
Hersteller: LUGUANG ELECTRONIC
LGE3D30065D THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D30065H
Hersteller: LUGUANG ELECTRONIC
LGE3D30065H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D30120D
Hersteller: LUGUANG ELECTRONIC
LGE3D30120D THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D30120H
Hersteller: LUGUANG ELECTRONIC
LGE3D30120H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D40065H
Hersteller: LUGUANG ELECTRONIC
LGE3D40065H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D40120H
Hersteller: LUGUANG ELECTRONIC
LGE3D40120H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D42090H
Hersteller: LUGUANG ELECTRONIC
LGE3D42090H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3D50120H
Hersteller: LUGUANG ELECTRONIC
LGE3D50120H THT Schottky diodes
Produkt ist nicht verfügbar
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LGE3M14120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M14120Q THT N channel transistors
Produkt ist nicht verfügbar
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LGE3M160120B
Hersteller: LUGUANG ELECTRONIC
LGE3M160120B THT N channel transistors
Produkt ist nicht verfügbar
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LGE3M160120E
Hersteller: LUGUANG ELECTRONIC
LGE3M160120E SMD N channel transistors
Produkt ist nicht verfügbar
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LGE3M160120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M160120Q THT N channel transistors
Produkt ist nicht verfügbar
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LGE3M18120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M18120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4923C6E793580D6&compId=LGE3M18120Q.pdf?ci_sign=7e83c72936c316ad271cc8a523a6e575f09dad6e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 74A; Idm: 220A; 428W
Case: TO247-4
Mounting: THT
Kind of package: tube
Polarisation: unipolar
Gate-source voltage: -5...20V
Gate charge: 235nC
On-state resistance: 34mΩ
Drain current: 74A
Pulsed drain current: 220A
Power dissipation: 428W
Drain-source voltage: 1.2kV
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M1K170B
Hersteller: LUGUANG ELECTRONIC
LGE3M1K170B THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M20120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M20120Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M25120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59005A3ECD6A0D6&compId=LGE3M25120Q.pdf?ci_sign=2cd22c143281fc3218b9a593938b5d20bb4d0d14
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 43mΩ
Power dissipation: 370W
Drain current: 60A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M25120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59005A3ECD6A0D6&compId=LGE3M25120Q.pdf?ci_sign=2cd22c143281fc3218b9a593938b5d20bb4d0d14
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 60A; Idm: 200A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 43mΩ
Power dissipation: 370W
Drain current: 60A
Pulsed drain current: 200A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M28065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5900E456DCCC0D6&compId=LGE3M28065Q.pdf?ci_sign=a1455990757c088f3a58e7f743bc980a1c65426b
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 39mΩ
Power dissipation: 326W
Drain current: 67A
Pulsed drain current: 211A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 163nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M28065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5900E456DCCC0D6&compId=LGE3M28065Q.pdf?ci_sign=a1455990757c088f3a58e7f743bc980a1c65426b
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 67A; Idm: 211A; 326W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 39mΩ
Power dissipation: 326W
Drain current: 67A
Pulsed drain current: 211A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -4...18V
Gate charge: 163nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590192155AF40D6&compId=LGE3M30065B.pdf?ci_sign=419eaefbc6a7a91613ebced9406402b271ab904b
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 326W
Drain current: 64A
Pulsed drain current: 212A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 147nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590192155AF40D6&compId=LGE3M30065B.pdf?ci_sign=419eaefbc6a7a91613ebced9406402b271ab904b
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 64A; Idm: 212A; 326W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 326W
Drain current: 64A
Pulsed drain current: 212A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 147nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4924C38B14100D6&compId=LGE3M30065Q.pdf?ci_sign=b07332cf1ad1e7b76d644810126fbea3701b98ae
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 45mΩ
Power dissipation: 300W
Drain current: 54A
Pulsed drain current: 170A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M30065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4924C38B14100D6&compId=LGE3M30065Q.pdf?ci_sign=b07332cf1ad1e7b76d644810126fbea3701b98ae
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 54A; Idm: 170A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 45mΩ
Power dissipation: 300W
Drain current: 54A
Pulsed drain current: 170A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59024CD69EDE0D6&compId=LGE3M35065Q.pdf?ci_sign=b532f9491d978cc9af38be083602b32a400d113f
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 370W
Drain current: 40A
Pulsed drain current: 130A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...18V
Gate charge: 30nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59024CD69EDE0D6&compId=LGE3M35065Q.pdf?ci_sign=b532f9491d978cc9af38be083602b32a400d113f
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 40A; Idm: 130A; 370W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 370W
Drain current: 40A
Pulsed drain current: 130A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...18V
Gate charge: 30nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5903052999C40D6&compId=LGE3M35120Q.pdf?ci_sign=1075c89bb29762ec661443ba4aedac7b74f03cf3
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 63mΩ
Power dissipation: 300W
Drain current: 44A
Pulsed drain current: 130A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 148nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M35120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5903052999C40D6&compId=LGE3M35120Q.pdf?ci_sign=1075c89bb29762ec661443ba4aedac7b74f03cf3
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 44A; Idm: 130A; 300W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 63mΩ
Power dissipation: 300W
Drain current: 44A
Pulsed drain current: 130A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 148nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59038C173A580D6&compId=LGE3M40065B.pdf?ci_sign=7491181a615e0c3f11c7249b6c845270e503746e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59038C173A580D6&compId=LGE3M40065B.pdf?ci_sign=7491181a615e0c3f11c7249b6c845270e503746e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590433440D160D6&compId=LGE3M40065Q.pdf?ci_sign=190b5dd862dbaf09f7624cc62ad8c982924c250a
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB590433440D160D6&compId=LGE3M40065Q.pdf?ci_sign=190b5dd862dbaf09f7624cc62ad8c982924c250a
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 58A; Idm: 180A; 348W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 55mΩ
Power dissipation: 348W
Drain current: 58A
Pulsed drain current: 180A
Drain-source voltage: 650V
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 110.8nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M40120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M40120Q THT N channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB49267BBF24CE0D6&compId=LGE3M45170B.pdf?ci_sign=6b3f5e4a20094785900799850c9f8bc512520ce6
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB49267BBF24CE0D6&compId=LGE3M45170B.pdf?ci_sign=6b3f5e4a20094785900799850c9f8bc512520ce6
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5904B0936F500D6&compId=LGE3M45170Q.pdf?ci_sign=cef1db883a6eadb4d832bbe6e44db2d3d974b215
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M45170Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5904B0936F500D6&compId=LGE3M45170Q.pdf?ci_sign=cef1db883a6eadb4d832bbe6e44db2d3d974b215
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.7kV; 48A; Idm: 160A; 520W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 90mΩ
Power dissipation: 520W
Drain current: 48A
Pulsed drain current: 160A
Drain-source voltage: 1.7kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 54nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59054FB72F840D6&compId=LGE3M50120B.pdf?ci_sign=75e93a87d679e689b5c93de67ddb827fe9d63eee
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 327W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120B pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB59054FB72F840D6&compId=LGE3M50120B.pdf?ci_sign=75e93a87d679e689b5c93de67ddb827fe9d63eee
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 327W
Mounting: THT
Case: TO247-3
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 327W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492705F3D9800D6&compId=LGE3M50120Q.pdf?ci_sign=e5cf09086b2e65e4fb653a07c14f490eb4720f7d
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 344W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 344W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M50120Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB492705F3D9800D6&compId=LGE3M50120Q.pdf?ci_sign=e5cf09086b2e65e4fb653a07c14f490eb4720f7d
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 145A; 344W
Mounting: THT
Case: TO247-4
Kind of package: tube
On-state resistance: 80mΩ
Power dissipation: 344W
Drain current: 43A
Pulsed drain current: 145A
Drain-source voltage: 1.2kV
Polarisation: unipolar
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Technology: SiC
Gate-source voltage: -5...20V
Gate charge: 0.12µC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LGE3M60065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4927F3EACA840D6&compId=LGE3M60065Q.pdf?ci_sign=907c8c1536ad74714cc94e9f74bd938f415f844e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 78nC
On-state resistance: 75mΩ
Drain current: 36A
Pulsed drain current: 97A
Power dissipation: 208W
Drain-source voltage: 650V
Kind of package: tube
Technology: SiC
Produkt ist nicht verfügbar
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LGE3M60065Q pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB4927F3EACA840D6&compId=LGE3M60065Q.pdf?ci_sign=907c8c1536ad74714cc94e9f74bd938f415f844e
Hersteller: LUGUANG ELECTRONIC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 36A; Idm: 97A; 208W
Case: TO247-4
Mounting: THT
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: -4...18V
Gate charge: 78nC
On-state resistance: 75mΩ
Drain current: 36A
Pulsed drain current: 97A
Power dissipation: 208W
Drain-source voltage: 650V
Kind of package: tube
Technology: SiC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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LGE3M70120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M70120Q THT N channel transistors
Produkt ist nicht verfügbar
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LGE3M80120B
Hersteller: LUGUANG ELECTRONIC
LGE3M80120B THT N channel transistors
Produkt ist nicht verfügbar
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LGE3M80120J
Hersteller: LUGUANG ELECTRONIC
LGE3M80120J SMD N channel transistors
Produkt ist nicht verfügbar
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LGE3M80120Q
Hersteller: LUGUANG ELECTRONIC
LGE3M80120Q THT N channel transistors
Produkt ist nicht verfügbar
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LGEA1117-1.5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Produkt ist nicht verfügbar
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LGEA1117-1.8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Produkt ist nicht verfügbar
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LGEA1117-2.5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-2.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 2.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.9...10V
Produkt ist nicht verfügbar
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LGEA1117-3.3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-3.3
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 3.3V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 4.75...10V
auf Bestellung 1040 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
305+0.24 EUR
475+0.15 EUR
570+0.13 EUR
795+0.09 EUR
840+0.086 EUR
Mindestbestellmenge: 305
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-5.0 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-5.0
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 6.5...12V
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
305+0.24 EUR
475+0.15 EUR
565+0.13 EUR
790+0.091 EUR
835+0.086 EUR
Mindestbestellmenge: 305
Im Einkaufswagen  Stück im Wert von  UAH
LGEA1117-ADJ pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-ADJ
Hersteller: LUGUANG ELECTRONIC
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.25÷12V; 1A; SOT89
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.25...12V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 1.4...8V
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
380+0.19 EUR
595+0.12 EUR
710+0.1 EUR
845+0.085 EUR
890+0.08 EUR
Mindestbestellmenge: 380
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LGEA1117-1.5 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-1.5
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.5V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3...10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
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LGEA1117-1.8 pVersion=0046&contRep=ZT&docId=005056AB281E1EDCB3F2B1AA19FB80D2&compId=LGEx1117x_SER.pdf?ci_sign=513116540c7a08c126fda250f320596a62d4753e
LGEA1117-1.8
Hersteller: LUGUANG ELECTRONIC
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 1A; SOT89; SMD; ±1%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.15V
Output voltage: 1.8V
Output current: 1A
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 3.2...10V
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
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