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SM4F12CA-TP SM4F12CA-TP Micro Commercial Co SM4F5.0A-100A(SOD-123FL).pdf Description: 400W,TVS, SOD-123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
35+ 0.52 EUR
100+ 0.32 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
MSJU07N65A-TP MSJU07N65A-TP Micro Commercial Co MSJU07N65A(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Produkt ist nicht verfügbar
MSJU07N65A-TP MSJU07N65A-TP Micro Commercial Co MSJU07N65A(DPAK).pdf Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+ 2.08 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
B5819WHE3-TP B5819WHE3-TP Micro Commercial Co B5817WHE3-B5819WHE3(SOD-123).pdf Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
B5819WHE3-TP B5819WHE3-TP Micro Commercial Co B5817WHE3-B5819WHE3(SOD-123).pdf Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2761 Stücke:
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27+0.67 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 27
B5819WSHE3-TP B5819WSHE3-TP Micro Commercial Co B5817WSHE3-B5819WSHE3(SOD-323).pdf Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
B5819WSHE3-TP B5819WSHE3-TP Micro Commercial Co B5817WSHE3-B5819WSHE3(SOD-323).pdf Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2560 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
GS1MHE3-LTP GS1MHE3-LTP Micro Commercial Co GS1AHE3-L_GS1MHE3-L(SMA).pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 1A (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GS1MHE3-LTP GS1MHE3-LTP Micro Commercial Co GS1AHE3-L_GS1MHE3-L(SMA).pdf Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 1A (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3454 Stücke:
Lieferzeit 10-14 Tag (e)
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
KTC3199-O-AP KTC3199-O-AP Micro Commercial Co Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
KTC3199-Y-AP KTC3199-Y-AP Micro Commercial Co Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
KTC3199-GR-AP KTC3199-GR-AP Micro Commercial Co Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
1N4448WHE3-TP 1N4448WHE3-TP Micro Commercial Co 1N4448WHE3(SOD-123).pdf Description: DIODE GEN PURP 100V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.05 EUR
Mindestbestellmenge: 3000
1N4448WHE3-TP 1N4448WHE3-TP Micro Commercial Co 1N4448WHE3(SOD-123).pdf Description: DIODE GEN PURP 100V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 5480 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
160+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 63
MMS9012HE3-H-TP MMS9012HE3-H-TP Micro Commercial Co MMS9012HE3(SOT-23).pdf Description: TRANS PNP 25V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMS9012HE3-H-TP MMS9012HE3-H-TP Micro Commercial Co MMS9012HE3(SOT-23).pdf Description: TRANS PNP 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
60+ 0.3 EUR
122+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 40
2SA1980-O-AP 2SA1980-O-AP Micro Commercial Co 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-G-AP 2SA1980-G-AP Micro Commercial Co 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-Y-AP 2SA1980-Y-AP Micro Commercial Co 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-L-AP 2SA1980-L-AP Micro Commercial Co 2SA1980-x.pdf Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
SIL3724A-TP SIL3724A-TP Micro Commercial Co SIL3724A(SOT23-6L).pdf Description: MOSFET N/P-CH 30V 4.5A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
SIL3724A-TP SIL3724A-TP Micro Commercial Co SIL3724A(SOT23-6L).pdf Description: MOSFET N/P-CH 30V 4.5A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
BAS40-05HE3-TP BAS40-05HE3-TP Micro Commercial Co Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAS40-05HE3-TP BAS40-05HE3-TP Micro Commercial Co Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
93+ 0.19 EUR
171+ 0.1 EUR
500+ 0.081 EUR
1000+ 0.056 EUR
Mindestbestellmenge: 63
BSS84DW-TP BSS84DW-TP Micro Commercial Co BSS84DW(SOT-363).pdf Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
BSS84DW-TP BSS84DW-TP Micro Commercial Co BSS84DW(SOT-363).pdf Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.21 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 27
BSS8402DW-TP BSS8402DW-TP Micro Commercial Co BSS8402DW(SOT-363).pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
BSS8402DW-TP BSS8402DW-TP Micro Commercial Co BSS8402DW(SOT-363).pdf Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
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MCB150N06KY-TP MCB150N06KY-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
Produkt ist nicht verfügbar
MCB150N06KY-TP MCB150N06KY-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+ 2.1 EUR
100+ 1.67 EUR
Mindestbestellmenge: 7
SIC20120PTA-BP SIC20120PTA-BP Micro Commercial Co SIC20120PTA(TO-247).pdf Description: DIODE SIL CARB 1.2KV 10A TO247-3
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
1+50.53 EUR
10+ 46.6 EUR
100+ 39.79 EUR
500+ 36.13 EUR
MMBT2907AHE3-TP MMBT2907AHE3-TP Micro Commercial Co MMBT2907AHE3(SOT-23).pdf Description: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMBT2907AHE3-TP MMBT2907AHE3-TP Micro Commercial Co MMBT2907AHE3(SOT-23).pdf Description: TRANS PNP 60V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
87+ 0.2 EUR
160+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 63
MSJB17N80-TP MSJB17N80-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
MSJB17N80-TP MSJB17N80-TP Micro Commercial Co Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.15 EUR
10+ 6.01 EUR
100+ 4.86 EUR
Mindestbestellmenge: 3
BAV21WSHE3-TP BAV21WSHE3-TP Micro Commercial Co Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAV21WSHE3-TP BAV21WSHE3-TP Micro Commercial Co Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
BAV21WHE3-TP BAV21WHE3-TP Micro Commercial Co BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAV21WHE3-TP BAV21WHE3-TP Micro Commercial Co BAV19WHE3-BAV21WHE3(SOD-123).pdf Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
SK54LHE3-TP SK54LHE3-TP Micro Commercial Co SK52LHE3-SK510LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54LHE3-TP SK54LHE3-TP Micro Commercial Co SK52LHE3-SK510LHE3(DO-214AB).pdf Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1317 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
SK54BHE3-LTP SK54BHE3-LTP Micro Commercial Co SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54BHE3-LTP SK54BHE3-LTP Micro Commercial Co SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
28+ 0.64 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
SK54AHE3-LTP SK54AHE3-LTP Micro Commercial Co SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54AHE3-LTP SK54AHE3-LTP Micro Commercial Co SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 4482 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 24
BSS138HE3-TP BSS138HE3-TP Micro Commercial Co BSS138HE3(SOT-23).pdf Description: N-CHANNEL MOSFET SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BSS138HE3-TP BSS138HE3-TP Micro Commercial Co BSS138HE3(SOT-23).pdf Description: N-CHANNEL MOSFET SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
2SB1198HE3-R-TP 2SB1198HE3-R-TP Micro Commercial Co 2SB1198HE3-R(SOT-23).pdf Description: TRANS PNP 80V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
2SB1198HE3-R-TP 2SB1198HE3-R-TP Micro Commercial Co 2SB1198HE3-R(SOT-23).pdf Description: TRANS PNP 80V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2660 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
BCP56-16HE3-TP BCP56-16HE3-TP Micro Commercial Co BCP56-16HE3(SOT-223).pdf Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCP56-16HE3-TP BCP56-16HE3-TP Micro Commercial Co BCP56-16HE3(SOT-223).pdf Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSS8050HE3-H-TP MMSS8050HE3-H-TP Micro Commercial Co MMSS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSS8050HE3-H-TP MMSS8050HE3-H-TP Micro Commercial Co MMSS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
MMS8050HE3-H-TP MMS8050HE3-H-TP Micro Commercial Co MMS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMS8050HE3-H-TP MMS8050HE3-H-TP Micro Commercial Co MMS8050HE3(SOT-23).pdf Description: TRANS NPN 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
59+ 0.3 EUR
121+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
Mindestbestellmenge: 40
2SB562-B-AP 2SB562-B-AP Micro Commercial Co 2SB562.pdf Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
2SB562-C-AP 2SB562-C-AP Micro Commercial Co 2SB562.pdf Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
MMBT5551HE3-TP MMBT5551HE3-TP Micro Commercial Co MMBT5551HE3(SOT-23).pdf Description: TRANS NPN 160V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMBT5551HE3-TP MMBT5551HE3-TP Micro Commercial Co MMBT5551HE3(SOT-23).pdf Description: TRANS NPN 160V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
2SD1766-R-TP Micro Commercial Co 2SD1766(SOT-89).pdf Description: TRANSISTOR NPN SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
SM4F12CA-TP SM4F5.0A-100A(SOD-123FL).pdf
SM4F12CA-TP
Hersteller: Micro Commercial Co
Description: 400W,TVS, SOD-123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20.1A
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOD-123FL
Bidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 19.9V
Power - Peak Pulse: 400W
Power Line Protection: No
Part Status: Active
auf Bestellung 4820 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
35+ 0.52 EUR
100+ 0.32 EUR
500+ 0.22 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 26
MSJU07N65A-TP MSJU07N65A(DPAK).pdf
MSJU07N65A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
Produkt ist nicht verfügbar
MSJU07N65A-TP MSJU07N65A(DPAK).pdf
MSJU07N65A-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 2.5A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 25 V
auf Bestellung 2466 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.08 EUR
100+ 1.61 EUR
500+ 1.37 EUR
1000+ 1.11 EUR
Mindestbestellmenge: 7
B5819WHE3-TP B5817WHE3-B5819WHE3(SOD-123).pdf
B5819WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
B5819WHE3-TP B5817WHE3-B5819WHE3(SOD-123).pdf
B5819WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 1A SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 27
B5819WSHE3-TP B5817WSHE3-B5819WSHE3(SOD-323).pdf
B5819WSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
B5819WSHE3-TP B5817WSHE3-B5819WSHE3(SOD-323).pdf
B5819WSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 1A SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Current - Reverse Leakage @ Vr: 40 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2560 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.2 EUR
1000+ 0.15 EUR
Mindestbestellmenge: 26
GS1MHE3-LTP GS1AHE3-L_GS1MHE3-L(SMA).pdf
GS1MHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 1A (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
GS1MHE3-LTP GS1AHE3-L_GS1MHE3-L(SMA).pdf
GS1MHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 1KV 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery > 500ns, > 1A (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 3454 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
29+0.62 EUR
42+ 0.42 EUR
100+ 0.21 EUR
500+ 0.17 EUR
1000+ 0.12 EUR
2000+ 0.1 EUR
Mindestbestellmenge: 29
KTC3199-O-AP
KTC3199-O-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
KTC3199-Y-AP
KTC3199-Y-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
KTC3199-GR-AP
KTC3199-GR-AP
Hersteller: Micro Commercial Co
Description: TRANS NPN 50V 0.15A TO92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Part Status: Obsolete
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Produkt ist nicht verfügbar
1N4448WHE3-TP 1N4448WHE3(SOD-123).pdf
1N4448WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 250MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.05 EUR
Mindestbestellmenge: 3000
1N4448WHE3-TP 1N4448WHE3(SOD-123).pdf
1N4448WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 100V 250MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 250mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2.5 µA @ 75 V
Qualification: AEC-Q101
auf Bestellung 5480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
160+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 63
MMS9012HE3-H-TP MMS9012HE3(SOT-23).pdf
MMS9012HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 25V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMS9012HE3-H-TP MMS9012HE3(SOT-23).pdf
MMS9012HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
60+ 0.3 EUR
122+ 0.14 EUR
500+ 0.12 EUR
1000+ 0.084 EUR
Mindestbestellmenge: 40
2SA1980-O-AP 2SA1980-x.pdf
2SA1980-O-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-G-AP 2SA1980-x.pdf
2SA1980-G-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-Y-AP 2SA1980-x.pdf
2SA1980-Y-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
2SA1980-L-AP 2SA1980-x.pdf
2SA1980-L-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 50V 0.15A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 2A, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
SIL3724A-TP SIL3724A(SOT23-6L).pdf
SIL3724A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 30V 4.5A SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
Produkt ist nicht verfügbar
SIL3724A-TP SIL3724A(SOT23-6L).pdf
SIL3724A-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 30V 4.5A SOT23-6L
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A, 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 315pF @ 10V, 365pF @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 3A, 10V, 90mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 6.08nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-6L
Part Status: Active
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.58 EUR
100+ 0.35 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
Mindestbestellmenge: 24
BAS40-05HE3-TP
BAS40-05HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAS40-05HE3-TP
BAS40-05HE3-TP
Hersteller: Micro Commercial Co
Description: DIODE ARR SCHOTT 40V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 40 mA
Current - Reverse Leakage @ Vr: 200 nA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2480 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
93+ 0.19 EUR
171+ 0.1 EUR
500+ 0.081 EUR
1000+ 0.056 EUR
Mindestbestellmenge: 63
BSS84DW-TP BSS84DW(SOT-363).pdf
BSS84DW-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.15 EUR
Mindestbestellmenge: 3000
BSS84DW-TP BSS84DW(SOT-363).pdf
BSS84DW-TP
Hersteller: Micro Commercial Co
Description: MOSFET 2P-CH 50V 0.16A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 160mA
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 25V
Rds On (Max) @ Id, Vgs: 8Ohm @ 100mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 8990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
27+0.67 EUR
37+ 0.48 EUR
100+ 0.24 EUR
500+ 0.21 EUR
1000+ 0.17 EUR
Mindestbestellmenge: 27
BSS8402DW-TP BSS8402DW(SOT-363).pdf
BSS8402DW-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
Produkt ist nicht verfügbar
BSS8402DW-TP BSS8402DW(SOT-363).pdf
BSS8402DW-TP
Hersteller: Micro Commercial Co
Description: MOSFET N/P-CH 60V/50V SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 200mW
Drain to Source Voltage (Vdss): 60V, 50V
Current - Continuous Drain (Id) @ 25°C: 115mA, 130mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V, 30pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V, 10Ohm @ 100mA, 5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA, 2V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 1713 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
28+0.65 EUR
35+ 0.51 EUR
100+ 0.31 EUR
500+ 0.28 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 28
MCB150N06KY-TP
MCB150N06KY-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
Produkt ist nicht verfügbar
MCB150N06KY-TP
MCB150N06KY-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 147W
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4650 pF @ 30 V
auf Bestellung 665 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.53 EUR
10+ 2.1 EUR
100+ 1.67 EUR
Mindestbestellmenge: 7
SIC20120PTA-BP SIC20120PTA(TO-247).pdf
SIC20120PTA-BP
Hersteller: Micro Commercial Co
Description: DIODE SIL CARB 1.2KV 10A TO247-3
auf Bestellung 1800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+50.53 EUR
10+ 46.6 EUR
100+ 39.79 EUR
500+ 36.13 EUR
MMBT2907AHE3-TP MMBT2907AHE3(SOT-23).pdf
MMBT2907AHE3-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 60V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMBT2907AHE3-TP MMBT2907AHE3(SOT-23).pdf
MMBT2907AHE3-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 60V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Qualification: AEC-Q101
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
63+0.28 EUR
87+ 0.2 EUR
160+ 0.11 EUR
500+ 0.086 EUR
1000+ 0.06 EUR
Mindestbestellmenge: 63
MSJB17N80-TP
MSJB17N80-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Produkt ist nicht verfügbar
MSJB17N80-TP
MSJB17N80-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 719 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.15 EUR
10+ 6.01 EUR
100+ 4.86 EUR
Mindestbestellmenge: 3
BAV21WSHE3-TP
BAV21WSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAV21WSHE3-TP
BAV21WSHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
BAV21WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV21WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BAV21WHE3-TP BAV19WHE3-BAV21WHE3(SOD-123).pdf
BAV21WHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE GEN PURP 200V 200MA SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
SK54LHE3-TP SK52LHE3-SK510LHE3(DO-214AB).pdf
SK54LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54LHE3-TP SK52LHE3-SK510LHE3(DO-214AB).pdf
SK54LHE3-TP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1317 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
25+0.72 EUR
29+ 0.62 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 25
SK54BHE3-LTP SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf
SK54BHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54BHE3-LTP SK52BHE3-L-SK510BHE3-L(DO-214AA).pdf
SK54BHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 2847 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
22+0.83 EUR
28+ 0.64 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.24 EUR
Mindestbestellmenge: 22
SK54AHE3-LTP SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf
SK54AHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
SK54AHE3-LTP SK52AHE3-L-SK510AHE3-L(DO-214AC).pdf
SK54AHE3-LTP
Hersteller: Micro Commercial Co
Description: DIODE SCHOTTKY 40V 5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 4482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
24+0.74 EUR
31+ 0.57 EUR
100+ 0.34 EUR
500+ 0.32 EUR
1000+ 0.22 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 24
BSS138HE3-TP BSS138HE3(SOT-23).pdf
BSS138HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BSS138HE3-TP BSS138HE3(SOT-23).pdf
BSS138HE3-TP
Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 220mA, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
2SB1198HE3-R-TP 2SB1198HE3-R(SOT-23).pdf
2SB1198HE3-R-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 80V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
2SB1198HE3-R-TP 2SB1198HE3-R(SOT-23).pdf
2SB1198HE3-R-TP
Hersteller: Micro Commercial Co
Description: TRANS PNP 80V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 100mA, 3V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 200 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2660 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
BCP56-16HE3-TP BCP56-16HE3(SOT-223).pdf
BCP56-16HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
BCP56-16HE3-TP BCP56-16HE3(SOT-223).pdf
BCP56-16HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 80V 1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSS8050HE3-H-TP MMSS8050HE3(SOT-23).pdf
MMSS8050HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 25V 1.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMSS8050HE3-H-TP MMSS8050HE3(SOT-23).pdf
MMSS8050HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 25V 1.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
MMS8050HE3-H-TP MMS8050HE3(SOT-23).pdf
MMS8050HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 25V 0.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMS8050HE3-H-TP MMS8050HE3(SOT-23).pdf
MMS8050HE3-H-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 25V 0.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2273 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
40+0.44 EUR
59+ 0.3 EUR
121+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.085 EUR
Mindestbestellmenge: 40
2SB562-B-AP 2SB562.pdf
2SB562-B-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
2SB562-C-AP 2SB562.pdf
2SB562-C-AP
Hersteller: Micro Commercial Co
Description: TRANS PNP 20V 1A TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: TO-92
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 900 mW
Produkt ist nicht verfügbar
MMBT5551HE3-TP MMBT5551HE3(SOT-23).pdf
MMBT5551HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 160V 0.6A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
MMBT5551HE3-TP MMBT5551HE3(SOT-23).pdf
MMBT5551HE3-TP
Hersteller: Micro Commercial Co
Description: TRANS NPN 160V 0.6A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 300 mW
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46
2SD1766-R-TP 2SD1766(SOT-89).pdf
Hersteller: Micro Commercial Co
Description: TRANSISTOR NPN SOT-89
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
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