Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3967) > Seite 22 nach 67
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| APA600-FG484 | MICROCHIP (MICROSEMI) |
 APA600-FG484 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FG484I | MICROCHIP (MICROSEMI) |
APA600-FG484I Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FG676 | MICROCHIP (MICROSEMI) |
APA600-FG676 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FG676I | MICROCHIP (MICROSEMI) |
APA600-FG676I Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG256 | MICROCHIP (MICROSEMI) |
APA600-FGG256 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG256M | MICROCHIP (MICROSEMI) |
APA600-FGG256M Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG484 | MICROCHIP (MICROSEMI) |
APA600-FGG484 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG484I | MICROCHIP (MICROSEMI) |
APA600-FGG484I Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG676 | MICROCHIP (MICROSEMI) |
APA600-FGG676 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-FGG676I | MICROCHIP (MICROSEMI) |
APA600-FGG676I Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-PQG208 | MICROCHIP (MICROSEMI) |
APA600-PQG208 Programmable circuits |
Produkt ist nicht verfügbar |
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| APA600-PQG208I | MICROCHIP (MICROSEMI) |
APA600-PQG208I Programmable circuits |
Produkt ist nicht verfügbar |
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| APA750-BG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-BG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-BGG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-BGG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-PQG208 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-PQG208I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Frequency: 180MHz Type of integrated circuit: FPGA |
Produkt ist nicht verfügbar |
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| APA750-BG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APA750-BG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APA750-BGG456 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APA750-BGG456I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 356 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PBGA456 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APA750-PQG208 | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 15mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APA750-PQG208I | MICROCHIP (MICROSEMI) |
Category: Programmable circuits Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA Supply voltage: 2.3...2.7V DC Mounting: SMD Quiescent current: 20mA Number of inputs/outputs: 158 Number of macrocells: 32768 Number of gates: 750k Memory: 144kB RAM Case: PQFP208 Frequency: 180MHz Type of integrated circuit: FPGA Anzahl je Verpackung: 24 Stücke |
Produkt ist nicht verfügbar |
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| APL502B2G | MICROCHIP (MICROSEMI) |
APL502B2G THT N channel transistors |
Produkt ist nicht verfügbar |
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| APL502J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 208A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 52A On-state resistance: 90mΩ Power dissipation: 568W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APL502J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 208A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 52A On-state resistance: 90mΩ Power dissipation: 568W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APL502LG | MICROCHIP (MICROSEMI) |
APL502LG THT N channel transistors |
Produkt ist nicht verfügbar |
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| APL602B2G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APL602B2G | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APL602J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 172A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 43A On-state resistance: 0.125Ω Power dissipation: 565W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| APL602J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 172A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 43A On-state resistance: 0.125Ω Power dissipation: 565W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: Linear™ Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APL602LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APL602LG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W Type of transistor: N-MOSFET Technology: Linear™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 49A Pulsed drain current: 196A Power dissipation: 730W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1001R6BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Gate charge: 55nC |
Produkt ist nicht verfügbar |
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APT1001R6BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3 Case: TO247-3 Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 32A Drain-source voltage: 1kV Drain current: 8A On-state resistance: 1.6Ω Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Gate charge: 55nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC |
Produkt ist nicht verfügbar |
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APT1001RBVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 278W Polarisation: unipolar Gate charge: 150nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1001RBVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC |
Produkt ist nicht verfügbar |
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APT1001RBVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: TO247-3 Mounting: THT Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1001RSVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: D3PAK Mounting: SMD Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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APT1001RSVRG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A Case: D3PAK Mounting: SMD Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 44A Drain-source voltage: 1kV Drain current: 11A On-state resistance: 1Ω Type of transistor: N-MOSFET Power dissipation: 280W Polarisation: unipolar Gate charge: 225nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| APT10021JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10021JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10021JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10021JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 148A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 37A On-state resistance: 0.21Ω Power dissipation: 694W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10025JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10025JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10025JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10025JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 5® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 136A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 34A On-state resistance: 0.25Ω Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.28Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10026JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.28Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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| APT10026JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 120A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 30A On-state resistance: 0.26Ω Power dissipation: 595W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC |
Produkt ist nicht verfügbar |
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| APT10026L2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC |
Produkt ist nicht verfügbar |
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| APT10026L2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX Case: TO264MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 152A Drain-source voltage: 1kV Drain current: 38A On-state resistance: 0.26Ω Type of transistor: N-MOSFET Power dissipation: 893W Polarisation: unipolar Gate charge: 267nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC |
Produkt ist nicht verfügbar |
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| APT10035B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX Case: TO247MAX Mounting: THT Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 112A Drain-source voltage: 1kV Drain current: 28A On-state resistance: 370mΩ Type of transistor: N-MOSFET Power dissipation: 690W Polarisation: unipolar Gate charge: 186nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| APA600-FG484 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FG484 Programmable circuits
APA600-FG484 Programmable circuits
Produkt ist nicht verfügbar
| APA600-FG484I |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FG484I Programmable circuits
APA600-FG484I Programmable circuits
Produkt ist nicht verfügbar
| APA600-FG676 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FG676 Programmable circuits
APA600-FG676 Programmable circuits
Produkt ist nicht verfügbar
| APA600-FG676I |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FG676I Programmable circuits
APA600-FG676I Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG256 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG256 Programmable circuits
APA600-FGG256 Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG256M |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG256M Programmable circuits
APA600-FGG256M Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG484 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG484 Programmable circuits
APA600-FGG484 Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG484I |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG484I Programmable circuits
APA600-FGG484I Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG676 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG676 Programmable circuits
APA600-FGG676 Programmable circuits
Produkt ist nicht verfügbar
| APA600-FGG676I |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-FGG676I Programmable circuits
APA600-FGG676I Programmable circuits
Produkt ist nicht verfügbar
| APA600-PQG208 |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-PQG208 Programmable circuits
APA600-PQG208 Programmable circuits
Produkt ist nicht verfügbar
| APA600-PQG208I |
|
Hersteller: MICROCHIP (MICROSEMI)
APA600-PQG208I Programmable circuits
APA600-PQG208I Programmable circuits
Produkt ist nicht verfügbar
| APA750-BG456 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-BG456I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-BGG456 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-BGG456I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-PQG208 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-PQG208I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Produkt ist nicht verfügbar
| APA750-BG456 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APA750-BG456I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APA750-BGG456 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APA750-BGG456I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PBGA456; Number of macrocells: 32768; I/O: 356; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 356
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PBGA456
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APA750-PQG208 |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 15mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 15mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APA750-PQG208I |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Category: Programmable circuits
Description: IC: FPGA; SMD; PQFP208; Number of macrocells: 32768; I/O: 158; 20mA
Supply voltage: 2.3...2.7V DC
Mounting: SMD
Quiescent current: 20mA
Number of inputs/outputs: 158
Number of macrocells: 32768
Number of gates: 750k
Memory: 144kB RAM
Case: PQFP208
Frequency: 180MHz
Type of integrated circuit: FPGA
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
| APL502B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
APL502B2G THT N channel transistors
APL502B2G THT N channel transistors
Produkt ist nicht verfügbar
| APL502J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APL502J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 52A; ISOTOP; screw; Idm: 208A; 568W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 208A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 52A
On-state resistance: 90mΩ
Power dissipation: 568W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APL502LG |
|
Hersteller: MICROCHIP (MICROSEMI)
APL502LG THT N channel transistors
APL502LG THT N channel transistors
Produkt ist nicht verfügbar
| APL602B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APL602B2G |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APL602J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APL602J |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 43A; ISOTOP; screw; Idm: 172A; 565W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 172A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 43A
On-state resistance: 0.125Ω
Power dissipation: 565W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: Linear™
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APL602LG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Produkt ist nicht verfügbar
| APL602LG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Linear™; unipolar; 600V; 49A; Idm: 196A; 730W
Type of transistor: N-MOSFET
Technology: Linear™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 49A
Pulsed drain current: 196A
Power dissipation: 730W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1001R6BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Produkt ist nicht verfügbar
| APT1001R6BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 8A; Idm: 32A; 266W; TO247-3
Case: TO247-3
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 32A
Drain-source voltage: 1kV
Drain current: 8A
On-state resistance: 1.6Ω
Type of transistor: N-MOSFET
Power dissipation: 266W
Polarisation: unipolar
Gate charge: 55nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1001RBVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Produkt ist nicht verfügbar
| APT1001RBVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 278W
Polarisation: unipolar
Gate charge: 150nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1001RBVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Produkt ist nicht verfügbar
| APT1001RBVRG |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: TO247-3
Mounting: THT
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT1001RSVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.72 EUR |
| APT1001RSVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 11A; Idm: 44A
Case: D3PAK
Mounting: SMD
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 44A
Drain-source voltage: 1kV
Drain current: 11A
On-state resistance: 1Ω
Type of transistor: N-MOSFET
Power dissipation: 280W
Polarisation: unipolar
Gate charge: 225nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 26 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 24.72 EUR |
| APT10021JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10021JFLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10021JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10021JLL |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 37A; ISOTOP; screw; Idm: 148A; 694W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 148A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 37A
On-state resistance: 0.21Ω
Power dissipation: 694W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10025JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10025JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10025JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10025JVR |
|
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 34A; ISOTOP; screw; Idm: 136A; 700W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 5®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 136A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 34A
On-state resistance: 0.25Ω
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10026JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.28Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.28Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10026JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.28Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.28Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10026JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.26Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.26Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| APT10026JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.26Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 30A; ISOTOP; screw; Idm: 120A; 595W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 120A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 30A
On-state resistance: 0.26Ω
Power dissipation: 595W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10026L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Produkt ist nicht verfügbar
| APT10026L2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10026L2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Produkt ist nicht verfügbar
| APT10026L2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 38A; Idm: 152A; 893W; TO264MAX
Case: TO264MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 152A
Drain-source voltage: 1kV
Drain current: 38A
On-state resistance: 0.26Ω
Type of transistor: N-MOSFET
Power dissipation: 893W
Polarisation: unipolar
Gate charge: 267nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| APT10035B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Produkt ist nicht verfügbar
| APT10035B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 28A; Idm: 112A; 690W; TO247MAX
Case: TO247MAX
Mounting: THT
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 112A
Drain-source voltage: 1kV
Drain current: 28A
On-state resistance: 370mΩ
Type of transistor: N-MOSFET
Power dissipation: 690W
Polarisation: unipolar
Gate charge: 186nC
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar