Produkte > MICROCHIP (MICROSEMI) > Alle Produkte des Herstellers MICROCHIP (MICROSEMI) (3883) > Seite 23 nach 65
Foto | Bezeichnung | Hersteller | Beschreibung |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT1003RBLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1003RKLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT1003RKLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: THT Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1003RSFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT1003RSFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT1003RSLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT1003RSLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 139W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 3Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10045B2FLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10045B2LLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.46Ω Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT10045JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.46Ω Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.45Ω Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT10045JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W Type of module: MOSFET transistor Case: ISOTOP Technology: POWER MOS 7® Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 84A Semiconductor structure: single transistor Drain-source voltage: 1kV Drain current: 21A On-state resistance: 0.45Ω Power dissipation: 460W Polarisation: unipolar Electrical mounting: screw Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10045LFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10045LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10045LLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 23A Pulsed drain current: 92A Power dissipation: 565W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 154nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10050B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10050B2VFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10050JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.5Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor |
Produkt ist nicht verfügbar |
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APT10050JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 19A Pulsed drain current: 76A Power dissipation: 450W Case: ISOTOP Gate-source voltage: ±30V On-state resistance: 0.5Ω Kind of channel: enhanced Semiconductor structure: single transistor Electrical mounting: screw Mechanical mounting: screw Type of module: MOSFET transistor Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10050LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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APT10050LVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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APT10050LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10050LVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 21A Pulsed drain current: 84A Power dissipation: 520W Case: TO264 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 500nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10078BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10078BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10078BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10078BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: THT Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10078SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10078SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 14A Pulsed drain current: 56A Power dissipation: 403W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 780mΩ Mounting: SMD Gate charge: 95nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10086BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10086BVFRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10086BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A Type of transistor: N-MOSFET Technology: POWER MOS 5® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 13A Pulsed drain current: 52A Power dissipation: 370W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 860mΩ Mounting: THT Gate charge: 275nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10090BFLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10090BLLG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3 Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT10090SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT10090SLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 7® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 12A Pulsed drain current: 48A Power dissipation: 298W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: SMD Gate charge: 71nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100D60B2G | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max |
Produkt ist nicht verfügbar |
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APT100D60B2G | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED Type of diode: rectifying Technology: FRED Mounting: THT Max. off-state voltage: 0.6kV Load current: 100A Semiconductor structure: single diode Features of semiconductor devices: fast switching Case: T-Max Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100DL60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Mechanical mounting: screw Kind of package: tube Version: module Technology: FRED Leads: M4 screws Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 100A Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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APT100DL60HJ | MICROCHIP (MICROSEMI) |
Category: Sing. ph. diode bridge rectif. - others Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw Mechanical mounting: screw Kind of package: tube Version: module Technology: FRED Leads: M4 screws Max. off-state voltage: 0.6kV Electrical mounting: screw Load current: 100A Case: SOT227B Type of bridge rectifier: single-phase Max. forward voltage: 2V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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APT100F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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APT100F50J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 490A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 500V Drain current: 65A On-state resistance: 36mΩ Power dissipation: 960W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 270A Application: motors Max. off-state voltage: 650V Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper |
Produkt ist nicht verfügbar |
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APT100GLQ65JU2 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 270A Application: motors Max. off-state voltage: 650V Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: boost chopper Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GLQ65JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 270A Application: motors Max. off-state voltage: 650V Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper |
Produkt ist nicht verfügbar |
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APT100GLQ65JU3 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A Mechanical mounting: screw Technology: Field Stop; Trench Pulsed collector current: 270A Application: motors Max. off-state voltage: 650V Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: SOT227B Gate-emitter voltage: ±20V Collector current: 100A Topology: buck chopper Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN120B2G | MICROCHIP (MICROSEMI) | APT100GN120B2G THT IGBT transistors |
Produkt ist nicht verfügbar |
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APT100GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 70A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT100GN120J | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 70A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 70A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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APT100GN120JDQ4 | MICROCHIP (MICROSEMI) |
Category: IGBT modules Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B Type of module: IGBT Semiconductor structure: single transistor Max. off-state voltage: 1.2kV Collector current: 70A Case: SOT227B Application: for inductive load; for UPS; motors; SMPS Electrical mounting: screw Gate-emitter voltage: ±30V Pulsed collector current: 300A Technology: Field Stop; Trench Mechanical mounting: screw Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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APT100GN60B2G | MICROCHIP (MICROSEMI) | APT100GN60B2G THT IGBT transistors |
Produkt ist nicht verfügbar |
APT1003RBLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RBLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RKLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RKLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2FLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2LLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JFLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JLL |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050B2VFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050B2VFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APT10050JVFR |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050LVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 36.67 EUR |
3+ | 34.66 EUR |
APT10050LVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 36.67 EUR |
3+ | 34.66 EUR |
APT10050LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050LVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078SLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078SLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVFRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVRG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BFLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090SLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090SLLG |
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100D60B2G |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Produkt ist nicht verfügbar
APT100D60B2G |
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100DL60HJ |
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.23 EUR |
APT100DL60HJ |
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 40.23 EUR |
APT100F50J |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT100F50J |
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU2 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Produkt ist nicht verfügbar
APT100GLQ65JU2 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU3 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Produkt ist nicht verfügbar
APT100GLQ65JU3 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120B2G |
Hersteller: MICROCHIP (MICROSEMI)
APT100GN120B2G THT IGBT transistors
APT100GN120B2G THT IGBT transistors
Produkt ist nicht verfügbar
APT100GN120J |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120J |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120JDQ4 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120JDQ4 |
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN60B2G |
Hersteller: MICROCHIP (MICROSEMI)
APT100GN60B2G THT IGBT transistors
APT100GN60B2G THT IGBT transistors
Produkt ist nicht verfügbar