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APT1003RBLLG APT1003RBLLG MICROCHIP (MICROSEMI) APT1003RxLL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RBLLG APT1003RBLLG MICROCHIP (MICROSEMI) APT1003RxLL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RKLLG APT1003RKLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RKLLG APT1003RKLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSFLLG APT1003RSFLLG MICROCHIP (MICROSEMI) Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSFLLG APT1003RSFLLG MICROCHIP (MICROSEMI) Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSLLG APT1003RSLLG MICROCHIP (MICROSEMI) APT1003RxLL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSLLG APT1003RSLLG MICROCHIP (MICROSEMI) APT1003RxLL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2FLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2FLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2LLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2LLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JFLL MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JFLL MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JLL MICROCHIP (MICROSEMI) 123946-apt10045jll-d-pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JLL MICROCHIP (MICROSEMI) 123946-apt10045jll-d-pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LFLLG APT10045LFLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LFLLG APT10045LFLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LLLG APT10045LLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LLLG APT10045LLLG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050B2VFRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050B2VFRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050JVFR MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APT10050JVFR MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050LVFRG APT10050LVFRG MICROCHIP (MICROSEMI) 5638-apt10050lvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
2+36.67 EUR
3+ 34.66 EUR
Mindestbestellmenge: 2
APT10050LVFRG APT10050LVFRG MICROCHIP (MICROSEMI) 5638-apt10050lvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
2+36.67 EUR
3+ 34.66 EUR
Mindestbestellmenge: 2
APT10050LVRG APT10050LVRG MICROCHIP (MICROSEMI) 5638-apt10050lvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050LVRG APT10050LVRG MICROCHIP (MICROSEMI) 5638-apt10050lvr-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BFLLG APT10078BFLLG MICROCHIP (MICROSEMI) 6550-apt10078bfllg-apt10078sfllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BFLLG APT10078BFLLG MICROCHIP (MICROSEMI) 6550-apt10078bfllg-apt10078sfllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BLLG APT10078BLLG MICROCHIP (MICROSEMI) 5639-apt10078bll-apt10078sll-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BLLG APT10078BLLG MICROCHIP (MICROSEMI) 5639-apt10078bll-apt10078sll-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078SLLG APT10078SLLG MICROCHIP (MICROSEMI) 5639-apt10078bll-apt10078sll-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078SLLG APT10078SLLG MICROCHIP (MICROSEMI) 5639-apt10078bll-apt10078sll-datasheet Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVFRG APT10086BVFRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVFRG APT10086BVFRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVRG APT10086BVRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVRG APT10086BVRG MICROCHIP (MICROSEMI) Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BFLLG APT10090BFLLG MICROCHIP (MICROSEMI) 6552-apt10090bfllg-apt10090sfllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BFLLG APT10090BFLLG MICROCHIP (MICROSEMI) 6552-apt10090bfllg-apt10090sfllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BLLG APT10090BLLG MICROCHIP (MICROSEMI) 6553-apt10090bllg-apt10090sllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BLLG APT10090BLLG MICROCHIP (MICROSEMI) 6553-apt10090bllg-apt10090sllg-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090SLLG APT10090SLLG MICROCHIP (MICROSEMI) Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090SLLG APT10090SLLG MICROCHIP (MICROSEMI) Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100D60B2G MICROCHIP (MICROSEMI) Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Produkt ist nicht verfügbar
APT100D60B2G MICROCHIP (MICROSEMI) Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100DL60HJ APT100DL60HJ MICROCHIP (MICROSEMI) APT100DL60HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
2+40.23 EUR
Mindestbestellmenge: 2
APT100DL60HJ APT100DL60HJ MICROCHIP (MICROSEMI) APT100DL60HJ.pdf Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
2+40.23 EUR
Mindestbestellmenge: 2
APT100F50J MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT100F50J MICROCHIP (MICROSEMI) Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU2 MICROCHIP (MICROSEMI) 136224-apt100glq65ju2-rev0-datasheet Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Produkt ist nicht verfügbar
APT100GLQ65JU2 MICROCHIP (MICROSEMI) 136224-apt100glq65ju2-rev0-datasheet Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU3 APT100GLQ65JU3 MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Produkt ist nicht verfügbar
APT100GLQ65JU3 APT100GLQ65JU3 MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120B2G MICROCHIP (MICROSEMI) APT100GN120B2G THT IGBT transistors
Produkt ist nicht verfügbar
APT100GN120J MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120J MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120JDQ4 MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120JDQ4 MICROCHIP (MICROSEMI) Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN60B2G MICROCHIP (MICROSEMI) APT100GN60B2G THT IGBT transistors
Produkt ist nicht verfügbar
APT1003RBLLG APT1003RxLL.pdf
APT1003RBLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RBLLG APT1003RxLL.pdf
APT1003RBLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RKLLG
APT1003RKLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RKLLG
APT1003RKLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; TO220-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance:
Mounting: THT
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSFLLG
APT1003RSFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSFLLG
APT1003RSFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT1003RSLLG APT1003RxLL.pdf
APT1003RSLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT1003RSLLG APT1003RxLL.pdf
APT1003RSLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 4A; Idm: 16A; 139W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 139W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance:
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2FLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2FLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045B2LLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045B2LLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO247MAX
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JFLL
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JFLL
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.46Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045JLL 123946-apt10045jll-d-pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT10045JLL 123946-apt10045jll-d-pdf
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 21A; ISOTOP; screw; Idm: 84A; 460W
Type of module: MOSFET transistor
Case: ISOTOP
Technology: POWER MOS 7®
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 84A
Semiconductor structure: single transistor
Drain-source voltage: 1kV
Drain current: 21A
On-state resistance: 0.45Ω
Power dissipation: 460W
Polarisation: unipolar
Electrical mounting: screw
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LFLLG
APT10045LFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LFLLG
APT10045LFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10045LLLG
APT10045LLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10045LLLG
APT10045LLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 23A; Idm: 92A; 565W; TO264
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 565W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 154nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050B2VFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050B2VFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050JVFR
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar
APT10050JVFR
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 1kV; 19A; ISOTOP; screw; Idm: 76A; 450W
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 19A
Pulsed drain current: 76A
Power dissipation: 450W
Case: ISOTOP
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Kind of channel: enhanced
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10050LVFRG 5638-apt10050lvr-datasheet
APT10050LVFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+36.67 EUR
3+ 34.66 EUR
Mindestbestellmenge: 2
APT10050LVFRG 5638-apt10050lvr-datasheet
APT10050LVFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+36.67 EUR
3+ 34.66 EUR
Mindestbestellmenge: 2
APT10050LVRG 5638-apt10050lvr-datasheet
APT10050LVRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10050LVRG 5638-apt10050lvr-datasheet
APT10050LVRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 21A; Idm: 84A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 21A
Pulsed drain current: 84A
Power dissipation: 520W
Case: TO264
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 500nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BFLLG 6550-apt10078bfllg-apt10078sfllg-datasheet
APT10078BFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BFLLG 6550-apt10078bfllg-apt10078sfllg-datasheet
APT10078BFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078BLLG 5639-apt10078bll-apt10078sll-datasheet
APT10078BLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078BLLG 5639-apt10078bll-apt10078sll-datasheet
APT10078BLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: THT
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10078SLLG 5639-apt10078bll-apt10078sll-datasheet
APT10078SLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10078SLLG 5639-apt10078bll-apt10078sll-datasheet
APT10078SLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 14A; Idm: 56A; 403W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 403W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 95nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVFRG
APT10086BVFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVFRG
APT10086BVFRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10086BVRG
APT10086BVRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10086BVRG
APT10086BVRG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 1kV; 13A; Idm: 52A
Type of transistor: N-MOSFET
Technology: POWER MOS 5®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 370W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 860mΩ
Mounting: THT
Gate charge: 275nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BFLLG 6552-apt10090bfllg-apt10090sfllg-datasheet
APT10090BFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BFLLG 6552-apt10090bfllg-apt10090sfllg-datasheet
APT10090BFLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090BLLG 6553-apt10090bllg-apt10090sllg-datasheet
APT10090BLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090BLLG 6553-apt10090bllg-apt10090sllg-datasheet
APT10090BLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; TO247-3
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT10090SLLG
APT10090SLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT10090SLLG
APT10090SLLG
Hersteller: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 12A; Idm: 48A; 298W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 7®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 12A
Pulsed drain current: 48A
Power dissipation: 298W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 71nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100D60B2G
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Produkt ist nicht verfügbar
APT100D60B2G
Hersteller: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 100A; T-Max; FRED
Type of diode: rectifying
Technology: FRED
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 100A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: T-Max
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100DL60HJ APT100DL60HJ.pdf
APT100DL60HJ
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+40.23 EUR
Mindestbestellmenge: 2
APT100DL60HJ APT100DL60HJ.pdf
APT100DL60HJ
Hersteller: MICROCHIP (MICROSEMI)
Category: Sing. ph. diode bridge rectif. - others
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 100A; screw; screw
Mechanical mounting: screw
Kind of package: tube
Version: module
Technology: FRED
Leads: M4 screws
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Load current: 100A
Case: SOT227B
Type of bridge rectifier: single-phase
Max. forward voltage: 2V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+40.23 EUR
Mindestbestellmenge: 2
APT100F50J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Produkt ist nicht verfügbar
APT100F50J
Hersteller: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 500V; 65A; ISOTOP; screw; Idm: 490A; 960W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 490A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 500V
Drain current: 65A
On-state resistance: 36mΩ
Power dissipation: 960W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU2 136224-apt100glq65ju2-rev0-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Produkt ist nicht verfügbar
APT100GLQ65JU2 136224-apt100glq65ju2-rev0-datasheet
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; motors
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: boost chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GLQ65JU3
APT100GLQ65JU3
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Produkt ist nicht verfügbar
APT100GLQ65JU3
APT100GLQ65JU3
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 650V; Ic: 100A
Mechanical mounting: screw
Technology: Field Stop; Trench
Pulsed collector current: 270A
Application: motors
Max. off-state voltage: 650V
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: SOT227B
Gate-emitter voltage: ±20V
Collector current: 100A
Topology: buck chopper
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120B2G
Hersteller: MICROCHIP (MICROSEMI)
APT100GN120B2G THT IGBT transistors
Produkt ist nicht verfügbar
APT100GN120J
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120J
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN120JDQ4
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Produkt ist nicht verfügbar
APT100GN120JDQ4
Hersteller: MICROCHIP (MICROSEMI)
Category: IGBT modules
Description: Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 70A; SOT227B
Type of module: IGBT
Semiconductor structure: single transistor
Max. off-state voltage: 1.2kV
Collector current: 70A
Case: SOT227B
Application: for inductive load; for UPS; motors; SMPS
Electrical mounting: screw
Gate-emitter voltage: ±30V
Pulsed collector current: 300A
Technology: Field Stop; Trench
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
APT100GN60B2G
Hersteller: MICROCHIP (MICROSEMI)
APT100GN60B2G THT IGBT transistors
Produkt ist nicht verfügbar
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