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PIC32MM0032GPL028-E/ML PIC32MM0032GPL028-E/ML Microchip Technology PIC32MM0064GPL036-Family-Data-Sheet-DS60001324C.pdf Description: IC MCU 32BIT 32KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b; D/A 1x5b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Number of I/O: 22
DigiKey Programmable: Not Verified
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100+2.48 EUR
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PIC32MM0032GPL028-I/M6 PIC32MM0032GPL028-I/M6 Microchip Technology filehandler.aspx?ddocname=en586396 Description: IC MCU 32BIT 32KB FLASH 28UQFN
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PIC32MM0032GPL028T-I/M6 PIC32MM0032GPL028T-I/M6 Microchip Technology filehandler.aspx?ddocname=en586396 Description: IC MCU 32BIT 32KB FLASH 28UQFN
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PIC32MM0032GPL028T-I/SS PIC32MM0032GPL028T-I/SS Microchip Technology PIC32MM0064GPL036-Family-Data-Sheet-DS60001324C.pdf Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b; D/A 1x5b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 22
DigiKey Programmable: Not Verified
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PIC32MM0032GPL028T-I/ML PIC32MM0032GPL028T-I/ML Microchip Technology filehandler.aspx?ddocname=en586396 Description: IC MCU 32BIT 32KB FLASH 28QFN
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PIC32MM0032GPL028-E/SS PIC32MM0032GPL028-E/SS Microchip Technology filehandler.aspx?ddocname=en586396 Description: IC MCU 32BIT 32KB FLASH 28SSOP
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ATSAMG55G19B-UNT ATSAMG55G19B-UNT Microchip Technology Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf Description: WLCSP MRL B 105C TEMP T&R
Packaging: Tape & Reel (TR)
Package / Case: 49-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 49-WLCSP (2.84x2.84)
Number of I/O: 38
DigiKey Programmable: Not Verified
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PIC32MM0256GPM028-I/M6 PIC32MM0256GPM028-I/M6 Microchip Technology PIC32MM0256GPM064-Family-Data-Sheet-DS60001387D.pdf Description: IC MCU 32BIT 256KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-UQFN (4x4)
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
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MCP14E4-E/SN MCP14E4-E/SN Microchip Technology 22062b.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 18ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
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SST25VF010A-33-4C-QAE SST25VF010A-33-4C-QAE Microchip Technology 25081A.pdf Description: IC FLASH 1MBIT SPI 33MHZ 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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SST25VF010A-33-4I-ZAE SST25VF010A-33-4I-ZAE Microchip Technology 25081A.pdf Description: IC FLASH 1MBIT SPI 33MHZ 8CSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-CSP
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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PIC18F23K22T-I/SO PIC18F23K22T-I/SO Microchip Technology PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
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PIC18F23K22T-I/SO PIC18F23K22T-I/SO Microchip Technology PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
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DSPIC33CK64MP202-I/2N DSPIC33CK64MP202-I/2N Microchip Technology dsPIC33CK256MP508-Family-Data-Sheet-DS70005349J.pdf Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-UQFN (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
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MSCSM120AM50CT1AG MSCSM120AM50CT1AG Microchip Technology 1244785-mscsm120am50ct1ag-datasheet Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP1F
Part Status: Active
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MSCSM70AM19CT1AG MSCSM70AM19CT1AG Microchip Technology 1244935-mscsm70am19ct1ag-datasheet Description: MOSFET 2N-CH 700V 124A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP1F
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MSCSM120AM31CT1AG MSCSM120AM31CT1AG Microchip Technology 1244782-mscsm120am31ct1ag-datasheet Description: SIC 2N-CH 1200V 89A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP1F
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MSCSM70VM19C3AG MSCSM70VM19C3AG Microchip Technology 1244941-mscsm70vm19c3ag-datasheet Description: MOSFET 2N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM120HM50CT3AG MSCSM120HM50CT3AG Microchip Technology 1244789-mscsm120hm50ct3ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP3F
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MSCSM120AM16CT1AG MSCSM120AM16CT1AG Microchip Technology 1244779-mscsm120am16ct1ag-datasheet Description: SIC 2N-CH 1200V 173A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP1F
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MSCSM120SKM11CT3AG MSCSM120SKM11CT3AG Microchip Technology 1244790-mscsm120skm11ct3ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
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MSCSM120DAM11CT3AG MSCSM120DAM11CT3AG Microchip Technology 1244786-mscsm120dam11ct3ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
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MSCSM70HM19CT3AG MSCSM70HM19CT3AG Microchip Technology 1244936-mscsm70hm19ct3ag-datasheet Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM70AM10CT3AG MSCSM70AM10CT3AG Microchip Technology 1244934-mscsm70am10ct3ag-datasheet Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM31CT3AG MSCSM120HM31CT3AG Microchip Technology Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM70VM10C4AG MSCSM70VM10C4AG Microchip Technology 1244940-mscsm70vm10c4ag-datasheet Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
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MSCSM70TAM19CT3AG MSCSM70TAM19CT3AG Microchip Technology 1244939-mscsm70tam19ct3ag-datasheet Description: MOSFET 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM70AM07CT3AG MSCSM70AM07CT3AG Microchip Technology 1244933-mscsm70am07ct3ag-datasheet Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
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MSCSM120TAM31CT3AG MSCSM120TAM31CT3AG Microchip Technology 1244794-mscsm120tam31ct3ag-datasheet Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
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MSCSM120AM11CT3AG MSCSM120AM11CT3AG Microchip Technology 1244778-mscsm120am11ct3ag-datasheet Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
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MSCSM120AM08CT3AG MSCSM120AM08CT3AG Microchip Technology 1244777-mscsm120am08ct3ag-datasheet Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM16CT3AG MSCSM120HM16CT3AG Microchip Technology 1244787-mscsm120hm16ct3ag-datasheet Description: SIC 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
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MSCSM70TAM10CTPAG MSCSM70TAM10CTPAG Microchip Technology 1244938-mscsm70tam10ctpag-datasheet Description: PM-MOSFET-SIC-SBD~-SP6P
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MSCSM70AM025CT6AG MSCSM70AM025CT6AG Microchip Technology 00003052C.pdf Description: PM-MOSFET-SIC-SBD~-SP6C
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MSCSM120TAM16CTPAG MSCSM120TAM16CTPAG Microchip Technology 1244792-mscsm120tam16ctpag-datasheet Description: SIC 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM042CT6AG MSCSM120AM042CT6AG Microchip Technology 1244784-mscsm120am042ct6ag-datasheet Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
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MSCSM70TAM05TPAG MSCSM70TAM05TPAG Microchip Technology 1244937-mscsm70tam05tpag-datasheet Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
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MSCSM70AM025CD3AG Microchip Technology 00003052C.pdf Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
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MSCSM70AM025CT6LIAG MSCSM70AM025CT6LIAG Microchip Technology MSCSM70AM025CT6LIAG_Preliminary_Apr2020.pdf Description: PM-MOSFET-SIC-SBD~-SP6C LI
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MSCSM120AM042CT6LIAG MSCSM120AM042CT6LIAG Microchip Technology 1244803-mscsm120am042ct6liag Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
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MSCSM120AM042CD3AG MSCSM120AM042CD3AG Microchip Technology Microsemi_MSCSM120AM042CD3AG_Phase_Leg_SiC_MOSFET.pdf Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120TAM11CTPAG MSCSM120TAM11CTPAG Microchip Technology 1244791-mscsm120tam11ctpag-datasheet Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM027CT6AG MSCSM120AM027CT6AG Microchip Technology 1244781-mscsm120am027ct6ag-datasheet Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
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MSCSM120AM027CD3AG MSCSM120AM027CD3AG Microchip Technology 1244780-mscsm120am027cd3ag-datasheet Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120AM02CT6LIAG MSCSM120AM02CT6LIAG Microchip Technology 1244801-mscsm120am02ct6liag-datasheet Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
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1N938A 1N938A Microchip Technology 125410-lds-0155-datasheet Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
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2+15.96 EUR
Mindestbestellmenge: 2
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MART100KP300Ae3 MART100KP300Ae3 Microchip Technology 77294-mrt100kp-pdf Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N823-1 JAN1N823-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AT28HC256-70SU-T AT28HC256-70SU-T Microchip Technology Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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AT28HC256-70SU-T AT28HC256-70SU-T Microchip Technology Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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JANTXV2N5339U3 Microchip Technology Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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AT27C080-12DC AT27C080-12DC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90DC AT27C080-90DC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RC AT27C080-12RC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RI AT27C080-12RI Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-15RC AT27C080-15RC Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-15RI AT27C080-15RI Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-90RC AT27C080-90RC Microchip Technology AT27C080%20%28Oct98%29.pdf Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90RI AT27C080-90RI Microchip Technology AT27C080%20(Oct98).pdf Description: IC EPROM 8M PARALLEL 32SOIC
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ATMXT1664T3-C2U035 Microchip Technology mXT1664T3%20Touchscreen%20Controller%20Product%20Datasheet_40002054B.pdf Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
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PIC32MM0032GPL028-E/ML PIC32MM0064GPL036-Family-Data-Sheet-DS60001324C.pdf
PIC32MM0032GPL028-E/ML
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28QFN
Packaging: Tube
Package / Case: 28-VQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b; D/A 1x5b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-QFN (6x6)
Number of I/O: 22
DigiKey Programmable: Not Verified
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6+2.99 EUR
25+2.69 EUR
100+2.48 EUR
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PIC32MM0032GPL028-I/M6 filehandler.aspx?ddocname=en586396
PIC32MM0032GPL028-I/M6
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28UQFN
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PIC32MM0032GPL028T-I/M6 filehandler.aspx?ddocname=en586396
PIC32MM0032GPL028T-I/M6
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28UQFN
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PIC32MM0032GPL028T-I/SS PIC32MM0064GPL036-Family-Data-Sheet-DS60001324C.pdf
PIC32MM0032GPL028T-I/SS
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Packaging: Tape & Reel (TR)
Package / Case: 28-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b; D/A 1x5b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-SSOP
Number of I/O: 22
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PIC32MM0032GPL028T-I/ML filehandler.aspx?ddocname=en586396
PIC32MM0032GPL028T-I/ML
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28QFN
Produkt ist nicht verfügbar
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PIC32MM0032GPL028-E/SS filehandler.aspx?ddocname=en586396
PIC32MM0032GPL028-E/SS
Hersteller: Microchip Technology
Description: IC MCU 32BIT 32KB FLASH 28SSOP
Produkt ist nicht verfügbar
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ATSAMG55G19B-UNT Atmel-11289-32-bit-Cortex-M4-Microcontroller-SAM-G55_Summary-Datasheet.pdf
ATSAMG55G19B-UNT
Hersteller: Microchip Technology
Description: WLCSP MRL B 105C TEMP T&R
Packaging: Tape & Reel (TR)
Package / Case: 49-UFBGA, WLCSP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 176K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4
Data Converters: A/D 8x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.62V ~ 3.6V
Connectivity: I2C, SPI, UART/USART, USB
Peripherals: DMA, I2S, POR, PWM, WDT
Supplier Device Package: 49-WLCSP (2.84x2.84)
Number of I/O: 38
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PIC32MM0256GPM028-I/M6 PIC32MM0256GPM064-Family-Data-Sheet-DS60001387D.pdf
PIC32MM0256GPM028-I/M6
Hersteller: Microchip Technology
Description: IC MCU 32BIT 256KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 25MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 32K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 12x10/12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2V ~ 3.6V
Connectivity: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Peripherals: Brown-out Detect/Reset, DMA, HLVD, I2S, POR, PWM, WDT
Supplier Device Package: 28-UQFN (4x4)
Part Status: Active
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 54 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.14 EUR
25+3.74 EUR
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MCP14E4-E/SN 22062b.pdf
MCP14E4-E/SN
Hersteller: Microchip Technology
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 15ns, 18ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: IGBT, N-Channel, P-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.4V
Current - Peak Output (Source, Sink): 4A, 4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 711 Stücke:
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Anzahl Preis
5+4.03 EUR
25+3.36 EUR
100+3.07 EUR
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SST25VF010A-33-4C-QAE 25081A.pdf
SST25VF010A-33-4C-QAE
Hersteller: Microchip Technology
Description: IC FLASH 1MBIT SPI 33MHZ 8WSON
Packaging: Tube
Package / Case: 8-WDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-WSON
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
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SST25VF010A-33-4I-ZAE 25081A.pdf
SST25VF010A-33-4I-ZAE
Hersteller: Microchip Technology
Description: IC FLASH 1MBIT SPI 33MHZ 8CSP
Packaging: Tape & Reel (TR)
Package / Case: 8-UFBGA, CSPBGA
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH
Clock Frequency: 33 MHz
Memory Format: FLASH
Supplier Device Package: 8-CSP
Part Status: Active
Write Cycle Time - Word, Page: 20µs
Memory Interface: SPI
Memory Organization: 128K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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PIC18F23K22T-I/SO PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf
PIC18F23K22T-I/SO
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1600+3.38 EUR
Mindestbestellmenge: 1600
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PIC18F23K22T-I/SO PIC18(L)F2X-4XK22-Data-Sheet-40001412H.pdf
PIC18F23K22T-I/SO
Hersteller: Microchip Technology
Description: IC MCU 8BIT 8KB FLASH 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Speed: 64MHz
Program Memory Size: 8KB (4K x 16)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 256 x 8
Core Processor: PIC
Data Converters: A/D 19x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.3V ~ 5.5V
Connectivity: I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, HLVD, POR, PWM, WDT
Supplier Device Package: 28-SOIC
Part Status: Active
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 3031 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.08 EUR
25+3.74 EUR
100+3.38 EUR
Mindestbestellmenge: 5
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DSPIC33CK64MP202-I/2N dsPIC33CK256MP508-Family-Data-Sheet-DS70005349J.pdf
DSPIC33CK64MP202-I/2N
Hersteller: Microchip Technology
Description: IC MCU 16BIT 64KB FLASH 28UQFN
Packaging: Tube
Package / Case: 28-UQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz
Program Memory Size: 64KB (64K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 12x12b; D/A 3x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, Motor Control PWM, POR, PWM, QEI, WDT
Supplier Device Package: 28-UQFN (6x6)
Number of I/O: 21
DigiKey Programmable: Not Verified
auf Bestellung 305 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
25+4.6 EUR
100+4.16 EUR
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MSCSM120AM50CT1AG 1244785-mscsm120am50ct1ag-datasheet
MSCSM120AM50CT1AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 55A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 245W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 1000V
Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 137nC @ 20V
Vgs(th) (Max) @ Id: 2.7V @ 1mA
Supplier Device Package: SP1F
Part Status: Active
Produkt ist nicht verfügbar
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MSCSM70AM19CT1AG 1244935-mscsm70am19ct1ag-datasheet
MSCSM70AM19CT1AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 124A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP1F
Produkt ist nicht verfügbar
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MSCSM120AM31CT1AG 1244782-mscsm120am31ct1ag-datasheet
MSCSM120AM31CT1AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 89A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP1F
Produkt ist nicht verfügbar
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MSCSM70VM19C3AG 1244941-mscsm70vm19c3ag-datasheet
MSCSM70VM19C3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
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MSCSM120HM50CT3AG 1244789-mscsm120hm50ct3ag-datasheet
MSCSM120HM50CT3AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
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MSCSM120AM16CT1AG 1244779-mscsm120am16ct1ag-datasheet
MSCSM120AM16CT1AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 173A SP1F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP1F
Produkt ist nicht verfügbar
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MSCSM120SKM11CT3AG 1244790-mscsm120skm11ct3ag-datasheet
MSCSM120SKM11CT3AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Part Status: Active
Current: 254 A
Voltage: 1.2 kV
auf Bestellung 4 Stücke:
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Anzahl Preis
1+280.56 EUR
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MSCSM120DAM11CT3AG 1244786-mscsm120dam11ct3ag-datasheet
MSCSM120DAM11CT3AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 1 Phase
Voltage - Isolation: 4000Vrms
Current: 254 A
Voltage: 1.2 kV
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1+423.74 EUR
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MSCSM70HM19CT3AG 1244936-mscsm70hm19ct3ag-datasheet
MSCSM70HM19CT3AG
Hersteller: Microchip Technology
Description: MOSFET 4N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
Produkt ist nicht verfügbar
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MSCSM70AM10CT3AG 1244934-mscsm70am10ct3ag-datasheet
MSCSM70AM10CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 241A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 690W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 241A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP3F
Part Status: Active
auf Bestellung 4 Stücke:
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Anzahl Preis
1+429.35 EUR
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MSCSM120HM31CT3AG
MSCSM120HM31CT3AG
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Part Status: Active
auf Bestellung 3 Stücke:
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Anzahl Preis
1+439.4 EUR
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MSCSM70VM10C4AG 1244940-mscsm70vm10c4ag-datasheet
MSCSM70VM10C4AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP4
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 674W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 238A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9000pF @ 700V
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 430nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 8mA
Supplier Device Package: SP4
Part Status: Active
auf Bestellung 1 Stücke:
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Anzahl Preis
1+548.12 EUR
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MSCSM70TAM19CT3AG 1244939-mscsm70tam19ct3ag-datasheet
MSCSM70TAM19CT3AG
Hersteller: Microchip Technology
Description: MOSFET 6N-CH 700V 124A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 365W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 124A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 700V
Rds On (Max) @ Id, Vgs: 19mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 215nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 4mA
Supplier Device Package: SP3F
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+396.65 EUR
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MSCSM70AM07CT3AG 1244933-mscsm70am07ct3ag-datasheet
MSCSM70AM07CT3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 700V 353A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 988W (Tc)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
Vgs(th) (Max) @ Id: 2.4V @ 12mA
Supplier Device Package: SP3F
auf Bestellung 3 Stücke:
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Anzahl Preis
1+612.06 EUR
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MSCSM120TAM31CT3AG 1244794-mscsm120tam31ct3ag-datasheet
MSCSM120TAM31CT3AG
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 89A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 395W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3020pF @ 1000V
Rds On (Max) @ Id, Vgs: 31mOhm @ 40A, 20V
Gate Charge (Qg) (Max) @ Vgs: 232nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SP3F
Produkt ist nicht verfügbar
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MSCSM120AM11CT3AG 1244778-mscsm120am11ct3ag-datasheet
MSCSM120AM11CT3AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 254A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.067kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 254A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP3F
Produkt ist nicht verfügbar
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MSCSM120AM08CT3AG 1244777-mscsm120am08ct3ag-datasheet
MSCSM120AM08CT3AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 337A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.409kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 337A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 12.08pF @ 1000V
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 160A, 20V
Gate Charge (Qg) (Max) @ Vgs: 928nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 4mA
Supplier Device Package: SP3F
Part Status: Active
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MSCSM120HM16CT3AG 1244787-mscsm120hm16ct3ag-datasheet
MSCSM120HM16CT3AG
Hersteller: Microchip Technology
Description: SIC 4N-CH 1200V 173A SP3F
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 745W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 173A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP3F
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MSCSM70TAM10CTPAG 1244938-mscsm70tam10ctpag-datasheet
MSCSM70TAM10CTPAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6P
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MSCSM70AM025CT6AG 00003052C.pdf
MSCSM70AM025CT6AG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C
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MSCSM120TAM16CTPAG 1244792-mscsm120tam16ctpag-datasheet
MSCSM120TAM16CTPAG
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 171A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 728W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 171A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM042CT6AG 1244784-mscsm120am042ct6ag-datasheet
MSCSM120AM042CT6AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 495A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C
Part Status: Active
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MSCSM70TAM05TPAG 1244937-mscsm70tam05tpag-datasheet
MSCSM70TAM05TPAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC~-SP6P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Type: MOSFET
Configuration: 3 Phase Inverter
Part Status: Active
Current: 273 A
Voltage: 700 V
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MSCSM70AM025CD3AG 00003052C.pdf
Hersteller: Microchip Technology
Description: SIC 700V 538A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Technology: Silicon Carbide (SiC)
Drain to Source Voltage (Vdss): 700V
Current - Continuous Drain (Id) @ 25°C: 538A (Tc)
Supplier Device Package: D3
Part Status: Active
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MSCSM70AM025CT6LIAG MSCSM70AM025CT6LIAG_Preliminary_Apr2020.pdf
MSCSM70AM025CT6LIAG
Hersteller: Microchip Technology
Description: PM-MOSFET-SIC-SBD~-SP6C LI
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MSCSM120AM042CT6LIAG 1244803-mscsm120am042ct6liag
MSCSM120AM042CT6LIAG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18100pF @ 1kV
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: SP6C LI
Part Status: Active
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MSCSM120AM042CD3AG Microsemi_MSCSM120AM042CD3AG_Phase_Leg_SiC_MOSFET.pdf
MSCSM120AM042CD3AG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 495A D3
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.031kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 495A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 18.1pF @ 1000V
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 240A, 20V
Gate Charge (Qg) (Max) @ Vgs: 1392nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 6mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120TAM11CTPAG 1244791-mscsm120tam11ctpag-datasheet
MSCSM120TAM11CTPAG
Hersteller: Microchip Technology
Description: SIC 6N-CH 1200V 251A SP6-P
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 6 N-Channel (3-Phase Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.042kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 251A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 9060pF @ 1000V
Rds On (Max) @ Id, Vgs: 10.4mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs: 696nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 3mA
Supplier Device Package: SP6-P
Part Status: Active
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MSCSM120AM027CT6AG 1244781-mscsm120am027ct6ag-datasheet
MSCSM120AM027CT6AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 733A SP6C
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: SP6C
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MSCSM120AM027CD3AG 1244780-mscsm120am027cd3ag-datasheet
MSCSM120AM027CD3AG
Hersteller: Microchip Technology
Description: SIC 2N-CH 1200V 733A D3
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 2.97kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27000pF @1000V
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 9mA
Supplier Device Package: D3
Part Status: Active
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MSCSM120AM02CT6LIAG 1244801-mscsm120am02ct6liag-datasheet
MSCSM120AM02CT6LIAG
Hersteller: Microchip Technology
Description: MOSFET 2N-CH 1200V 947A SP6C LI
Packaging: Tube
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N Channel (Phase Leg)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 3.75kW (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 947A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 36240pF @ 1000V
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 480A, 20V
Gate Charge (Qg) (Max) @ Vgs: 2784nC @ 20V
Vgs(th) (Max) @ Id: 2.8V @ 12mA
Supplier Device Package: SP6C LI
Part Status: Active
auf Bestellung 1 Stücke:
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1+2612.12 EUR
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1N938A 125410-lds-0155-datasheet
1N938A
Hersteller: Microchip Technology
Description: DIODE ZENER
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 9 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
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Anzahl Preis
2+15.96 EUR
Mindestbestellmenge: 2
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MART100KP300Ae3 77294-mrt100kp-pdf
MART100KP300Ae3
Hersteller: Microchip Technology
Description: TVS DIODE 300VWM 590VC CASE 5A
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 300V
Supplier Device Package: Case 5A (DO-204AR)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 333V
Voltage - Clamping (Max) @ Ipp: 590V
Power - Peak Pulse: 100000W (100kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
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JAN1N823-1 125462-lds-0220-datasheet
JAN1N823-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Qualification: MIL-PRF-19500/159
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AT28HC256-70SU-T Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf
AT28HC256-70SU-T
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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AT28HC256-70SU-T Military-Grade-256-Kbit-High-Speed-Paged-Parallel-EEPROM-Data-Sheet-20006352A.pdf
AT28HC256-70SU-T
Hersteller: Microchip Technology
Description: IC EEPROM 256KBIT PAR 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EEPROM
Memory Format: EEPROM
Supplier Device Package: 28-SOIC
Write Cycle Time - Word, Page: 10ms
Memory Interface: Parallel
Access Time: 70 ns
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
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JANTXV2N5339U3
Hersteller: Microchip Technology
Description: TRANS NPN 100V 5A U-3
Packaging: Bulk
Package / Case: TO-276AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: U-3 (TO-276AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
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AT27C080-12DC AT27C080%20%28Oct98%29.pdf
AT27C080-12DC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90DC AT27C080%20%28Oct98%29.pdf
AT27C080-90DC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32CDIP
Packaging: Tube
Package / Case: 32-CDIP (0.600", 15.24mm)
Mounting Type: Through Hole
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - UV
Memory Format: EPROM
Supplier Device Package: 32-CDIP
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RC AT27C080%20%28Oct98%29.pdf
AT27C080-12RC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-12RI AT27C080%20%28Oct98%29.pdf
AT27C080-12RI
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 120 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-15RC AT27C080%20(Oct98).pdf
AT27C080-15RC
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-15RI AT27C080%20(Oct98).pdf
AT27C080-15RI
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
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AT27C080-90RC AT27C080%20%28Oct98%29.pdf
AT27C080-90RC
Hersteller: Microchip Technology
Description: IC EPROM 8MBIT PARALLEL 32SOIC
Packaging: Tube
Package / Case: 32-SOIC (0.445", 11.30mm Width)
Mounting Type: Surface Mount
Memory Size: 8Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 70°C (TC)
Voltage - Supply: 4.5V ~ 5.5V
Technology: EPROM - OTP
Memory Format: EPROM
Supplier Device Package: 32-SOIC
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 1M x 8
DigiKey Programmable: Not Verified
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AT27C080-90RI AT27C080%20(Oct98).pdf
AT27C080-90RI
Hersteller: Microchip Technology
Description: IC EPROM 8M PARALLEL 32SOIC
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ATMXT1664T3-C2U035 mXT1664T3%20Touchscreen%20Controller%20Product%20Datasheet_40002054B.pdf
Hersteller: Microchip Technology
Description: 1664 CHANNEL TOUCHSCREEN CONTROL
Packaging: Tray
Package / Case: 162-UFBGA
Mounting Type: Surface Mount
Interface: I2C, SPI, USB
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.135V ~ 3.465V
Resolution (Bits): 12 b
Supplier Device Package: 162-UFBGA (10x5)
Voltage Reference: Internal
Touchscreen: 2 Wire Capacitive
Part Status: Active
Current - Supply: 11.28 mA
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