Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (353998) > Seite 1603 nach 5900
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DSC1223DI2-156M2500T | Microchip Technology |
 Description: MEMS OSC SMD |
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| DSC1223DA3-100M0000T | Microchip Technology | Description: OSC MEMS LVDS SMD |
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DSC1223NE2-100M0000 | Microchip Technology |
Description: MEMS OSC, LOW JITTER, 100MHZ, LV |
Produkt ist nicht verfügbar |
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-3.20-mm-x-2.50-mm.jpg "DSC1101CE1-100.0000T") |
DSC1101CE1-100.0000T | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVCMO Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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| DSC1001CE1-100.0000T | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ CMOS SMD Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
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DSC1101CE1-100.0000 | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVCMO Packaging: Tube Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.6V Current - Supply (Max): 35mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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| DSC1103CE1-100.0000 | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVDS Packaging: Tube Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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| DSC1001CE1-100.0000 | Microchip Technology |
Description: MEMS OSC XO 100.0000MHZ CMOS SMD Packaging: Tube Package / Case: 4-SMD, No Lead Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: CMOS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 1.8V ~ 3.3V Ratings: AEC-Q100 Current - Supply (Max): 10.5mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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| DSC1103CE1-100.0000T | Microchip Technology |
Description: MEMS OSC LOW JITTER 100MHZ LVDS Packaging: Tape & Reel (TR) Package / Case: 6-VDFN Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm) Mounting Type: Surface Mount Output: LVDS Function: Standby (Power Down) Type: XO (Standard) Operating Temperature: -20°C ~ 70°C Frequency Stability: ±50ppm Voltage - Supply: 2.25V ~ 3.63V Current - Supply (Max): 32mA Height - Seated (Max): 0.035" (0.90mm) Frequency: 100 MHz Base Resonator: MEMS |
Produkt ist nicht verfügbar |
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| MASMCGLCE110Ae3 | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCG |
Produkt ist nicht verfügbar |
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MSMCJLCE110AE3/TR | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCJ |
Produkt ist nicht verfügbar |
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| MXSMCGLCE110A | Microchip Technology |
Description: TVS DIODE 110VWM 178VC SMCG |
Produkt ist nicht verfügbar |
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| JAN1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTXV1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTX1N2814RB | Microchip Technology | Description: ZENER DIODE |
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| JAN1N2814RB | Microchip Technology | Description: ZENER DIODE |
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| JANTX1N2814B | Microchip Technology | Description: ZENER DIODE |
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| JANTXV1N2814RB | Microchip Technology | Description: ZENER DIODE |
Produkt ist nicht verfügbar |
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| 2N4003 | Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-211MB, TO-63-4, Stud Mounting Type: Stud Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Supplier Device Package: TO-63 Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
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24FC16T-E/OT36KVAO | Microchip Technology |
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V, |
Produkt ist nicht verfügbar |
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LP0701LG-G | Microchip Technology |
Description: MOSFET P-CH 16.5V 700MA 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 1.1mA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 16.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
Produkt ist nicht verfügbar |
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MSMLJ8.5CA | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
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MSMLJ8.5Ae3 | Microchip Technology |
Description: TVS DIODE 8.5VWM 14.4VC DO214AB |
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MSMLJ90A | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
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MSMLJ8.0CA | Microchip Technology |
Description: TVS DIODE 8VWM 13.6VC DO214AB |
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MSMLJ90Ae3 | Microchip Technology |
Description: TVS DIODE 90VWM 146VC DO214AB |
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MSMLJ75CA | Microchip Technology |
Description: TVS DIODE 75VWM 121VC DO214AB |
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MSMLJ9.0CA | Microchip Technology |
Description: TVS DIODE 9VWM 15.4VC DO214AB |
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MSMLJ85AE3 | Microchip Technology |
Description: TVS DIODE 85VWM 137VC DO214AB |
Produkt ist nicht verfügbar |
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ATTINY24V-10SSU | Microchip Technology |
 Description: IC MCU 8BIT 2KB FLASH 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Speed: 10MHz Program Memory Size: 2KB (1K x 16) RAM Size: 128 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 128 x 8 Core Processor: AVR Data Converters: A/D 8x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: USI Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT Supplier Device Package: 14-SOIC Part Status: Active Number of I/O: 12 DigiKey Programmable: Verified |
auf Bestellung 865 Stücke: Lieferzeit 10-14 Tag (e) |
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-Axial-Microchip.JPG "JANS1N5711-1/TR") |
JANS1N5711-1/TR | Microchip Technology |
Description: DIODE SCHOTTKY 70V 33MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 2pF @ 0V, 1MHz Current - Average Rectified (Io): 33mA Supplier Device Package: DO-35 (DO-204AH) Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Current - Reverse Leakage @ Vr: 200 nA @ 50 V Grade: Military Qualification: MIL-PRF-19500/444 |
Produkt ist nicht verfügbar |
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DSC6083CI2A-032K800 | Microchip Technology |
Description: MEMS OSC XO 32.8000KHZ CMOS SMD |
auf Bestellung 140 Stücke: Lieferzeit 10-14 Tag (e) |
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PIC32MK1024GPK100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 100TQFP Packaging: Tape & Reel (TR) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b; D/A 3x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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PIC32MK1024GPK100T-E/PT | Microchip Technology |
Description: IC MCU 32BIT 1MB FLASH 100TQFP Packaging: Cut Tape (CT) Package / Case: 100-TQFP Mounting Type: Surface Mount Speed: 120MHz Program Memory Size: 1MB (1M x 8) RAM Size: 256K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: MIPS32® microAptiv™ Data Converters: A/D 42x12b; D/A 3x12b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT Supplier Device Package: 100-TQFP (12x12) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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| 2N5741 | Microchip Technology | Description: POWER BJT |
Produkt ist nicht verfügbar |
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AT91SAM7SE32B-CU | Microchip Technology |
Description: IC MCU 16/32B 32KB FLSH 144LFBGA Packaging: Tray Package / Case: 144-LFBGA Mounting Type: Surface Mount Speed: 55MHz Program Memory Size: 32KB (32K x 8) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: ARM7® Data Converters: A/D 8x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V Connectivity: EBI/EMI, I2C, SPI, SSC, UART/USART, USB Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 144-LFBGA (10x10) Part Status: Active Number of I/O: 88 DigiKey Programmable: Not Verified |
auf Bestellung 184 Stücke: Lieferzeit 10-14 Tag (e) |
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VXM1-1B1-24M5750000TR | Microchip Technology | Description: VXM1-1B1-24M5750000TR |
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VXM1-1B1-24M5750000 | Microchip Technology | Description: VXM1-1B1-24M5750000 |
Produkt ist nicht verfügbar |
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JANSP2N2907AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSG2N2907AUBC | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANTX2N2907AP | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSM2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JAN2N2907AUBP/TR | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Tape & Reel (TR) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
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JANTXVR2N2907AUB | Microchip Technology |
Description: RH SMALL-SIGNAL BJT _ UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANSD2N2907AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANKCDR2N2907A | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANTXV2N2907AP | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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JANSL2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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MSR2N2907AL | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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| JANSP2N2907AUA | Microchip Technology |
Description: RH SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UA Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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JANTXV2N2907AUBC | Microchip Technology |
Description: SMALL-SIGNAL BJT Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UBC Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
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DSPIC33CK256MP608T-I/PT | Microchip Technology |
Description: IC MCU 16BIT 256KB FLASH 80TQFP Packaging: Tape & Reel (TR) Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 100MIPs Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 24x12b SAR; D/A 6x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Active Number of I/O: 69 DigiKey Programmable: Not Verified |
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DSPIC33CK256MP608T-I/PT | Microchip Technology |
Description: IC MCU 16BIT 256KB FLASH 80TQFP Packaging: Cut Tape (CT) Package / Case: 80-TQFP Mounting Type: Surface Mount Speed: 100MIPs Program Memory Size: 256KB (256K x 8) RAM Size: 64K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: dsPIC Data Converters: A/D 24x12b SAR; D/A 6x12b Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT Supplier Device Package: 80-TQFP (12x12) Part Status: Active Number of I/O: 69 DigiKey Programmable: Not Verified |
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JANS1N5308-1 | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Bulk Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V Grade: Military Qualification: MIL-PRF-19500/463 |
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JANTXV1N5308-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V Grade: Military Qualification: MIL-PRF-19500/463 |
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JAN1N5308UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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JANTX1N5308-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-7 Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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JANS1N5308UR-1 | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Bulk Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V Grade: Military Qualification: MIL-PRF-19500/463 |
Produkt ist nicht verfügbar |
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1N5308/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 475MW Packaging: Tape & Reel (TR) Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C Supplier Device Package: DO-7 Part Status: Active Power - Max: 475mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V |
Produkt ist nicht verfügbar |
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1N5308UR-1/TR | Microchip Technology |
Description: DIODE CUR REG 100V 2.97MA 500MW Packaging: Tape & Reel (TR) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Supplier Device Package: DO-213AB (MELF, LL41) Part Status: Active Power - Max: 500mW Voltage - Anode - Cathode (Vak)(Max): 100V Regulator Current (Max): 2.97mA Voltage - Limiting (Max): 2.15V |
Produkt ist nicht verfügbar |
| DSC1223DI2-156M2500T |
|
Hersteller: Microchip Technology
Description: MEMS OSC SMD
Description: MEMS OSC SMD
Produkt ist nicht verfügbar
| DSC1223DA3-100M0000T |
Hersteller: Microchip Technology
Description: OSC MEMS LVDS SMD
Description: OSC MEMS LVDS SMD
Produkt ist nicht verfügbar
| DSC1223NE2-100M0000 |
|
Hersteller: Microchip Technology
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
Description: MEMS OSC, LOW JITTER, 100MHZ, LV
Produkt ist nicht verfügbar
| DSC1101CE1-100.0000T |
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Hersteller: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| DSC1001CE1-100.0000T |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| DSC1101CE1-100.0000 |
|
Hersteller: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVCMO
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.6V
Current - Supply (Max): 35mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| DSC1103CE1-100.0000 |
|
Hersteller: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tube
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| DSC1001CE1-100.0000 |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC XO 100.0000MHZ CMOS SMD
Packaging: Tube
Package / Case: 4-SMD, No Lead
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: CMOS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 1.8V ~ 3.3V
Ratings: AEC-Q100
Current - Supply (Max): 10.5mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| DSC1103CE1-100.0000T |
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Hersteller: Microchip Technology
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Description: MEMS OSC LOW JITTER 100MHZ LVDS
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN
Size / Dimension: 0.126" L x 0.098" W (3.20mm x 2.50mm)
Mounting Type: Surface Mount
Output: LVDS
Function: Standby (Power Down)
Type: XO (Standard)
Operating Temperature: -20°C ~ 70°C
Frequency Stability: ±50ppm
Voltage - Supply: 2.25V ~ 3.63V
Current - Supply (Max): 32mA
Height - Seated (Max): 0.035" (0.90mm)
Frequency: 100 MHz
Base Resonator: MEMS
Produkt ist nicht verfügbar
| MASMCGLCE110Ae3 |
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Hersteller: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
Description: TVS DIODE 110VWM 178VC SMCG
Produkt ist nicht verfügbar
| MSMCJLCE110AE3/TR |
|
Hersteller: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCJ
Description: TVS DIODE 110VWM 178VC SMCJ
Produkt ist nicht verfügbar
| MXSMCGLCE110A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 110VWM 178VC SMCG
Description: TVS DIODE 110VWM 178VC SMCG
Produkt ist nicht verfügbar
| 2N4003 |
Hersteller: Microchip Technology
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Description: POWER BJT
Packaging: Bulk
Package / Case: TO-211MB, TO-63-4, Stud
Mounting Type: Stud Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-63
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 100 W
Produkt ist nicht verfügbar
| 24FC16T-E/OT36KVAO |
|
Hersteller: Microchip Technology
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
Description: 16KB I2C EEPROM, 1MHZ 1.7-5.5V,
Produkt ist nicht verfügbar
| LP0701LG-G |
|
Hersteller: Microchip Technology
Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 16.5V 700MA 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 300mA, 5V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 1.1mA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 16.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Produkt ist nicht verfügbar
| MSMLJ8.5CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ8.5Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Description: TVS DIODE 8.5VWM 14.4VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ90A |
|
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ8.0CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 8VWM 13.6VC DO214AB
Description: TVS DIODE 8VWM 13.6VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ90Ae3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 90VWM 146VC DO214AB
Description: TVS DIODE 90VWM 146VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ75CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 75VWM 121VC DO214AB
Description: TVS DIODE 75VWM 121VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ9.0CA |
|
Hersteller: Microchip Technology
Description: TVS DIODE 9VWM 15.4VC DO214AB
Description: TVS DIODE 9VWM 15.4VC DO214AB
Produkt ist nicht verfügbar
| MSMLJ85AE3 |
|
Hersteller: Microchip Technology
Description: TVS DIODE 85VWM 137VC DO214AB
Description: TVS DIODE 85VWM 137VC DO214AB
Produkt ist nicht verfügbar
| ATTINY24V-10SSU | |
|
Hersteller: Microchip Technology
Description: IC MCU 8BIT 2KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
Description: IC MCU 8BIT 2KB FLASH 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Speed: 10MHz
Program Memory Size: 2KB (1K x 16)
RAM Size: 128 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 128 x 8
Core Processor: AVR
Data Converters: A/D 8x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: USI
Peripherals: Brown-out Detect/Reset, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 14-SOIC
Part Status: Active
Number of I/O: 12
DigiKey Programmable: Verified
auf Bestellung 865 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 3.34 EUR |
| 25+ | 3.05 EUR |
| 100+ | 2.77 EUR |
| JANS1N5711-1/TR |
Hersteller: Microchip Technology
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Description: DIODE SCHOTTKY 70V 33MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 33mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Grade: Military
Qualification: MIL-PRF-19500/444
Produkt ist nicht verfügbar
| DSC6083CI2A-032K800 |
|
Hersteller: Microchip Technology
Description: MEMS OSC XO 32.8000KHZ CMOS SMD
Description: MEMS OSC XO 32.8000KHZ CMOS SMD
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 11+ | 1.62 EUR |
| PIC32MK1024GPK100T-E/PT |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Tape & Reel (TR)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| PIC32MK1024GPK100T-E/PT |
|
Hersteller: Microchip Technology
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 1MB FLASH 100TQFP
Packaging: Cut Tape (CT)
Package / Case: 100-TQFP
Mounting Type: Surface Mount
Speed: 120MHz
Program Memory Size: 1MB (1M x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: MIPS32® microAptiv™
Data Converters: A/D 42x12b; D/A 3x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.3V ~ 3.6V
Connectivity: I2C, IrDA, LINbus, PMP, SPI, UART/USART, USB OTG
Peripherals: Brown-out Detect/Reset, DMA, I2S, POR, PWM, WDT
Supplier Device Package: 100-TQFP (12x12)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| AT91SAM7SE32B-CU |
|
Hersteller: Microchip Technology
Description: IC MCU 16/32B 32KB FLSH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 55MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V
Connectivity: EBI/EMI, I2C, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
Description: IC MCU 16/32B 32KB FLSH 144LFBGA
Packaging: Tray
Package / Case: 144-LFBGA
Mounting Type: Surface Mount
Speed: 55MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM7®
Data Converters: A/D 8x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V
Connectivity: EBI/EMI, I2C, SPI, SSC, UART/USART, USB
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 144-LFBGA (10x10)
Part Status: Active
Number of I/O: 88
DigiKey Programmable: Not Verified
auf Bestellung 184 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 17.58 EUR |
| 25+ | 15.98 EUR |
| 100+ | 14.47 EUR |
| VXM1-1B1-24M5750000TR |
Hersteller: Microchip Technology
Description: VXM1-1B1-24M5750000TR
Description: VXM1-1B1-24M5750000TR
Produkt ist nicht verfügbar
| VXM1-1B1-24M5750000 |
Hersteller: Microchip Technology
Description: VXM1-1B1-24M5750000
Description: VXM1-1B1-24M5750000
Produkt ist nicht verfügbar
| JANSP2N2907AUB |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANSG2N2907AUBC |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANTX2N2907AP |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANSM2N2907AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JAN2N2907AUBP/TR |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: SMALL-SIGNAL BJT
Packaging: Tape & Reel (TR)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
| JANTXVR2N2907AUB |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT _ UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT _ UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANSD2N2907AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANKCDR2N2907A |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANTXV2N2907AP |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANSL2N2907AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| MSR2N2907AL |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANSP2N2907AUA |
Hersteller: Microchip Technology
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: RH SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| JANTXV2N2907AUBC |
Hersteller: Microchip Technology
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: SMALL-SIGNAL BJT
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UBC
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
| DSPIC33CK256MP608T-I/PT |
|
Hersteller: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Tape & Reel (TR)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| DSPIC33CK256MP608T-I/PT |
|
Hersteller: Microchip Technology
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
Description: IC MCU 16BIT 256KB FLASH 80TQFP
Packaging: Cut Tape (CT)
Package / Case: 80-TQFP
Mounting Type: Surface Mount
Speed: 100MIPs
Program Memory Size: 256KB (256K x 8)
RAM Size: 64K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: dsPIC
Data Converters: A/D 24x12b SAR; D/A 6x12b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: CANbus, I²C, IrDA, LINbus, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, DMA, I²S, Motor Control, POR, PWM, QEI, WDT
Supplier Device Package: 80-TQFP (12x12)
Part Status: Active
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
| JANS1N5308-1 |
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
| JANTXV1N5308-1/TR |
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
| JAN1N5308UR-1/TR |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
| JANTX1N5308-1/TR |
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
| JANS1N5308UR-1 |
|
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Bulk
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Grade: Military
Qualification: MIL-PRF-19500/463
Produkt ist nicht verfügbar
| 1N5308/TR |
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Description: DIODE CUR REG 100V 2.97MA 475MW
Packaging: Tape & Reel (TR)
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: DO-7
Part Status: Active
Power - Max: 475mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Produkt ist nicht verfügbar
| 1N5308UR-1/TR |
Hersteller: Microchip Technology
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Description: DIODE CUR REG 100V 2.97MA 500MW
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Supplier Device Package: DO-213AB (MELF, LL41)
Part Status: Active
Power - Max: 500mW
Voltage - Anode - Cathode (Vak)(Max): 100V
Regulator Current (Max): 2.97mA
Voltage - Limiting (Max): 2.15V
Produkt ist nicht verfügbar