Produkte > MICROCHIP TECHNOLOGY > Alle Produkte des Herstellers MICROCHIP TECHNOLOGY (332808) > Seite 1749 nach 5547
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1N5420E3/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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JAN1N5420/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JANTX1N5420/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JAN1N5420US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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1N5420US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JANTX1N5420US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JANTXV1N5420/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JANTXV1N5420US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A D-5B Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 600 V |
Produkt ist nicht verfügbar |
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JANS1N5420 | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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JANS1N5420/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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JANS1N5420US | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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JANS1N5420US/TR | Microchip Technology |
Description: DIODE GEN PURP 600V 3A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A |
Produkt ist nicht verfügbar |
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CD5341B | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: Die Mounting Type: Surface Mount Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: Die Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 3 V |
Produkt ist nicht verfügbar |
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1N5806 | Microchip Technology |
Description: DIODE GEN PURP 150V 1A A AXIAL Packaging: Bulk Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 150 V |
auf Bestellung 222 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5807 | Microchip Technology |
Description: DIODE GEN PURP 50V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 50 V |
auf Bestellung 185 Stücke: Lieferzeit 21-28 Tag (e) |
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ADM00871 | Microchip Technology |
Description: MIC2810 3 OUTPUT PMIC EVALUATION Packaging: Bulk Voltage - Output: 1.25V, 1.4V, 3.3V Voltage - Input: 3.6V ~ 5.5V Current - Output: 600mA, 300mA, 300mA Frequency - Switching: 2MHz Regulator Topology: Buck Board Type: Fully Populated Utilized IC / Part: MIC2810 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Down with LDO Outputs and Type: 3, Non-Isolated |
Produkt ist nicht verfügbar |
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2N6284 | Microchip Technology |
Description: NPN TRANSISTOR Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V Supplier Device Package: TO-204AA (TO-3) Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 175 W |
Produkt ist nicht verfügbar |
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U3280M-NFBY | Microchip Technology |
Description: IC RFID TRANSP 100-150KHZ 16SSOP Packaging: Tube Mounting Type: Surface Mount Frequency: 100kHz ~ 150kHz Type: RFID Transponder Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6.5V |
Produkt ist nicht verfügbar |
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ATMEGA2560-16CU | Microchip Technology |
Description: IC MCU 8BIT 256KB FLASH 100CBGA Packaging: Tray Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 16MHz Program Memory Size: 256KB (128K x 16) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: AVR Data Converters: A/D 16x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 100-CBGA (9x9) Number of I/O: 86 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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ATMEGA2560V-8CU | Microchip Technology |
Description: IC MCU 8BIT 256KB FLASH 100CBGA Packaging: Tray Package / Case: 100-TFBGA Mounting Type: Surface Mount Speed: 8MHz Program Memory Size: 256KB (128K x 16) RAM Size: 8K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH EEPROM Size: 4K x 8 Core Processor: AVR Data Converters: A/D 16x10b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V Connectivity: EBI/EMI, I2C, SPI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Supplier Device Package: 100-CBGA (9x9) Number of I/O: 86 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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47L16T-I/ST | Microchip Technology |
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: EEPROM, SRAM Clock Frequency: 1 MHz Memory Format: EERAM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 1ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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47L16T-I/ST | Microchip Technology |
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 16Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: EEPROM, SRAM Clock Frequency: 1 MHz Memory Format: EERAM Supplier Device Package: 8-TSSOP Write Cycle Time - Word, Page: 1ms Memory Interface: I2C Access Time: 400 ns Memory Organization: 2K x 8 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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MAPLAD15KP14CAe3 | Microchip Technology |
Description: TVS DIODE 14VWM 23.2VC PLAD Packaging: Bulk Package / Case: Nonstandard SMD Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 645A Voltage - Reverse Standoff (Typ): 14V Supplier Device Package: PLAD Bidirectional Channels: 1 Voltage - Breakdown (Min): 15.6V Voltage - Clamping (Max) @ Ipp: 23.2V Power - Peak Pulse: 15000W (15kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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PD-9506GC/AC-EK | Microchip Technology |
Description: 6-PORT BT 60W NMS EU/UK CORD Packaging: Box Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 60W Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt Number of Ports: 6 Standard Number: 60950-1 |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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PD-9612GC/AC-EK | Microchip Technology |
Description: 12-PORT BT 90W NMS AC EU/UK CORD Packaging: Box Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 950W Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt Number of Ports: 12 Standard Number: 62368-1 |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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PD-9501GC/AC-UK | Microchip Technology |
Description: 1-PORT BT 60W 1G AC UK CORD Packaging: Bulk Size / Dimension: 5.94" L x 2.44" W x 1.50" H (150.9mm x 62.0mm x 38.1mm) Voltage - Output: 55V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 60W Compliance: IEEE802.3af, IEEE802.3at Current - Output: 1.1 A Number of Ports: 1 |
Produkt ist nicht verfügbar |
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PD-9501-10GC/AC-UK | Microchip Technology |
Description: 1-PORT BT 60W 10G AC UK CORD Packaging: Bulk Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm) Voltage - Output: 55V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Power (Watts) - Per Port: 60W Compliance: IEEE802.3af, IEEE802.3at Current - Output: 1.09 A Number of Ports: 1 |
Produkt ist nicht verfügbar |
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PD-9501-10GC/AC-CN | Microchip Technology |
Description: 1-PORT BT 60W 10G AC CN CORD Packaging: Bulk Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm) Voltage - Output: 55V Mounting Type: Desktop Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 60W Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt Number of Ports: 1 Standard Number: 60950-1 |
Produkt ist nicht verfügbar |
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PD-9606GC/AC-US | Microchip Technology |
Description: 6-PORT BT 90W NMS AC US CORD Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 54V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 90W Compliance: IEEE802.3bt Current - Output: 1.64 A Number of Ports: 6 |
Produkt ist nicht verfügbar |
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PD-9606GC/AC-AU | Microchip Technology |
Description: 6-PORT BT 90W NMS AC AU CORD Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 55V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 90W Compliance: IEEE802.3bt Current - Output: 1.64 A Number of Ports: 6 |
Produkt ist nicht verfügbar |
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PD-9606GC/AC-UK | Microchip Technology |
Description: 6-PORT BT 90W NMS AC UK CORD Packaging: Bulk Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm) Voltage - Output: 55V Mounting Type: Rack Mount Voltage - Input: 100 ~ 240 VAC Type: Midspan Injector Operating Temperature: 0°C ~ 40°C Data Rate: 10/100/1000 Mbps Approval Agency: CE Power (Watts) - Per Port: 90W Compliance: IEEE802.3bt Current - Output: 1.64 A Number of Ports: 6 |
Produkt ist nicht verfügbar |
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1N5811URS/TR | Microchip Technology |
Description: UFR,FRR Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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1N5811URS/TR | Microchip Technology |
Description: UFR,FRR Packaging: Cut Tape (CT) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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JANTXV1N5811URS/TR | Microchip Technology |
Description: UFR,FRR Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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JANS1N5811URS/TR | Microchip Technology |
Description: UFR,FRR Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Capacitance @ Vr, F: 60pF @ 10V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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UXM15P/TR | Microchip Technology |
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL Packaging: Tape & Reel (TR) Package / Case: 24-TFQFN Exposed Pad Mounting Type: Surface Mount Function: Prescaler Frequency: 0Hz ~ 20GHz RF Type: General Purpose Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9 Supplier Device Package: 24-QFN (4x4) |
Produkt ist nicht verfügbar |
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UXM15P/TR | Microchip Technology |
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL Packaging: Cut Tape (CT) Package / Case: 24-TFQFN Exposed Pad Mounting Type: Surface Mount Function: Prescaler Frequency: 0Hz ~ 20GHz RF Type: General Purpose Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9 Supplier Device Package: 24-QFN (4x4) |
Produkt ist nicht verfügbar |
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VTA1-2A0-10M0000000 | Microchip Technology |
Description: VTA1-2A0-10M0000000 Packaging: Tube |
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VTA1-2B1-2M04800000 | Microchip Technology |
Description: VTA1-2B1-2M04800000 Packaging: Tube |
Produkt ist nicht verfügbar |
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MP61010-M42 | Microchip Technology |
Description: GAAS PIN HERMETIC PILL Packaging: Bag Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 0.18pF @ 10V, 1MHz Resistance @ If, F: 1Ohm @ 20mA, 1GHz Voltage - Peak Reverse (Max): 50V Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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MP61012-P00 | Microchip Technology |
Description: GAAS PIN NON HERMETIC CHIP Packaging: Tray Package / Case: Die Diode Type: PIN - Single Operating Temperature: -55°C ~ 175°C Capacitance @ Vr, F: 0.35pF @ 10V, 1MHz Resistance @ If, F: 800mOhm @ 20mA, 1GHz Voltage - Peak Reverse (Max): 50V Supplier Device Package: Chip Current - Max: 50 mA |
Produkt ist nicht verfügbar |
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1N6009B | Microchip Technology |
Description: DIODE ZENER 24V 500MW DO35 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 62 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 18 V |
Produkt ist nicht verfügbar |
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2N3792 | Microchip Technology |
Description: TRANS PNP 80V 10A TO3 Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A Current - Collector Cutoff (Max): 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V Supplier Device Package: TO-3 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 5 W |
Produkt ist nicht verfügbar |
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MXSMCGLCE24A | Microchip Technology |
Description: TVS DIODE 24VWM 38.9VC SMCG Packaging: Bulk Package / Case: DO-215AB, SMC Gull Wing Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 100pF @ 1MHz Current - Peak Pulse (10/1000µs): 39A Voltage - Reverse Standoff (Typ): 24V Supplier Device Package: SMCG (DO-215AB) Unidirectional Channels: 1 Voltage - Breakdown (Min): 26.7V Voltage - Clamping (Max) @ Ipp: 38.9V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
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JANTX1N3338B | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-5 Power - Max: 50 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V |
Produkt ist nicht verfügbar |
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JANTXV1N3338B | Microchip Technology |
Description: ZENER DIODE Packaging: Bulk Tolerance: ±5% Package / Case: DO-203AB, DO-5, Stud Mounting Type: Stud Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 82 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-5 Power - Max: 50 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V |
Produkt ist nicht verfügbar |
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MCP73223T-C2SI/MF | Microchip Technology |
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-VFDFN Exposed Pad Number of Cells: 1 ~ 2 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Iron Phosphate Supplier Device Package: 10-DFN (3x3) Charge Current - Max: 1.1A Programmable Features: Current, Timer Fault Protection: Over Temperature, Over Voltage, Reverse Current Voltage - Supply (Max): 16V Battery Pack Voltage: 7.2V Current - Charging: Constant - Programmable |
Produkt ist nicht verfügbar |
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MCP73223T-C2SI/MF | Microchip Technology |
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN Packaging: Cut Tape (CT) Package / Case: 10-VFDFN Exposed Pad Number of Cells: 1 ~ 2 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Battery Chemistry: Lithium Iron Phosphate Supplier Device Package: 10-DFN (3x3) Charge Current - Max: 1.1A Programmable Features: Current, Timer Fault Protection: Over Temperature, Over Voltage, Reverse Current Voltage - Supply (Max): 16V Battery Pack Voltage: 7.2V Current - Charging: Constant - Programmable |
auf Bestellung 1488 Stücke: Lieferzeit 21-28 Tag (e) |
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MAX24287ETK2T | Microchip Technology |
Description: IC INTERFACE SPECIALIZED 68TQFN Packaging: Tape & Reel (TR) Package / Case: 68-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Ethernet Voltage - Supply: 1.14V ~ 3.465V Applications: Switch Interfacing Supplier Device Package: 68-TQFN-EP (8x8) |
Produkt ist nicht verfügbar |
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MAX24287ETK2T | Microchip Technology |
Description: IC INTERFACE SPECIALIZED 68TQFN Packaging: Cut Tape (CT) Package / Case: 68-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Ethernet Voltage - Supply: 1.14V ~ 3.465V Applications: Switch Interfacing Supplier Device Package: 68-TQFN-EP (8x8) |
Produkt ist nicht verfügbar |
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JAN1N5546DUR-1 | Microchip Technology |
Description: DIODE ZENER 33V 500MW DO213AA Packaging: Bulk Tolerance: ±1% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 33 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V |
Produkt ist nicht verfügbar |
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24LC128-I/SNG | Microchip Technology |
Description: IC EEPROM 128KBIT I2C 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 128Kbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.5V ~ 5.5V Technology: EEPROM Clock Frequency: 400 kHz Memory Format: EEPROM Supplier Device Package: 8-SOIC Grade: Automotive Write Cycle Time - Word, Page: 5ms Memory Interface: I2C Access Time: 900 ns Memory Organization: 16K x 8 Qualification: AEC-Q100 |
auf Bestellung 397 Stücke: Lieferzeit 21-28 Tag (e) |
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1N4979US/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: E-MELF Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 56 V |
auf Bestellung 101 Stücke: Lieferzeit 21-28 Tag (e) |
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1N4979US/TR | Microchip Technology |
Description: VOLTAGE REGULATOR Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: SQ-MELF, E Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 75 V Impedance (Max) (Zzt): 55 Ohms Supplier Device Package: E-MELF Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A Current - Reverse Leakage @ Vr: 2 µA @ 56 V |
auf Bestellung 101 Stücke: Lieferzeit 21-28 Tag (e) |
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JANTXV1N5543CUR-1 | Microchip Technology |
Description: DIODE ZENER 25V 500MW DO213AA Packaging: Bulk Tolerance: ±2% Package / Case: DO-213AA (Glass) Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 25 V Impedance (Max) (Zzt): 100 Ohms Supplier Device Package: DO-213AA Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 10 nA @ 22.4 V |
Produkt ist nicht verfügbar |
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MPF200TS-1FCSG536I | Microchip Technology |
Description: IC FPGA 300 I/O 536CSPBGA Packaging: Tray Package / Case: 536-LFBGA, CSPBGA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C (TJ) Voltage - Supply: 0.97V ~ 1.08V Number of Logic Elements/Cells: 192000 Supplier Device Package: 536-CSPBGA (16x16) Total RAM Bits: 13619200 Number of I/O: 300 DigiKey Programmable: Not Verified |
auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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MSMCJ15A/TR | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMCJ (DO-214AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MSMCJ15AE3/TR | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC SMCJ Packaging: Tape & Reel (TR) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: SMCJ (DO-214AB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MASMCJ15A | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
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MASMCJ15Ae3 | Microchip Technology |
Description: TVS DIODE 15VWM 24.4VC DO214AB Packaging: Bulk Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 61.5A Voltage - Reverse Standoff (Typ): 15V Supplier Device Package: DO-214AB (SMCJ) Unidirectional Channels: 1 Voltage - Breakdown (Min): 16.7V Voltage - Clamping (Max) @ Ipp: 24.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Grade: Military Qualification: MIL-PRF-19500 |
Produkt ist nicht verfügbar |
1N5420E3/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Produkt ist nicht verfügbar
JAN1N5420/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5420/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JAN1N5420US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5420US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5420US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTXV1N5420/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTXV1N5420US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANS1N5420 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Produkt ist nicht verfügbar
JANS1N5420/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Produkt ist nicht verfügbar
JANS1N5420US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Produkt ist nicht verfügbar
JANS1N5420US/TR |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Description: DIODE GEN PURP 600V 3A B SQ-MELF
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Produkt ist nicht verfügbar
CD5341B |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Die
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
1N5806 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Description: DIODE GEN PURP 150V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 222 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.1 EUR |
100+ | 12.17 EUR |
1N5807 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
auf Bestellung 185 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 16.64 EUR |
100+ | 15.43 EUR |
ADM00871 |
Hersteller: Microchip Technology
Description: MIC2810 3 OUTPUT PMIC EVALUATION
Packaging: Bulk
Voltage - Output: 1.25V, 1.4V, 3.3V
Voltage - Input: 3.6V ~ 5.5V
Current - Output: 600mA, 300mA, 300mA
Frequency - Switching: 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: MIC2810
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 3, Non-Isolated
Description: MIC2810 3 OUTPUT PMIC EVALUATION
Packaging: Bulk
Voltage - Output: 1.25V, 1.4V, 3.3V
Voltage - Input: 3.6V ~ 5.5V
Current - Output: 600mA, 300mA, 300mA
Frequency - Switching: 2MHz
Regulator Topology: Buck
Board Type: Fully Populated
Utilized IC / Part: MIC2810
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Down with LDO
Outputs and Type: 3, Non-Isolated
Produkt ist nicht verfügbar
2N6284 |
Hersteller: Microchip Technology
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1500 @ 1A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Produkt ist nicht verfügbar
U3280M-NFBY |
Hersteller: Microchip Technology
Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tube
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
Description: IC RFID TRANSP 100-150KHZ 16SSOP
Packaging: Tube
Mounting Type: Surface Mount
Frequency: 100kHz ~ 150kHz
Type: RFID Transponder
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6.5V
Produkt ist nicht verfügbar
ATMEGA2560-16CU |
Hersteller: Microchip Technology
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 16MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 4.5V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
ATMEGA2560V-8CU |
Hersteller: Microchip Technology
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 256KB FLASH 100CBGA
Packaging: Tray
Package / Case: 100-TFBGA
Mounting Type: Surface Mount
Speed: 8MHz
Program Memory Size: 256KB (128K x 16)
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
EEPROM Size: 4K x 8
Core Processor: AVR
Data Converters: A/D 16x10b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 1.8V ~ 5.5V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Supplier Device Package: 100-CBGA (9x9)
Number of I/O: 86
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
47L16T-I/ST |
Hersteller: Microchip Technology
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
47L16T-I/ST |
Hersteller: Microchip Technology
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Description: IC EERAM 16KBIT I2C 1MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 16Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: EEPROM, SRAM
Clock Frequency: 1 MHz
Memory Format: EERAM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 1ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 2K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
MAPLAD15KP14CAe3 |
Hersteller: Microchip Technology
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 645A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Description: TVS DIODE 14VWM 23.2VC PLAD
Packaging: Bulk
Package / Case: Nonstandard SMD
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 645A
Voltage - Reverse Standoff (Typ): 14V
Supplier Device Package: PLAD
Bidirectional Channels: 1
Voltage - Breakdown (Min): 15.6V
Voltage - Clamping (Max) @ Ipp: 23.2V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
Produkt ist nicht verfügbar
PD-9506GC/AC-EK |
Hersteller: Microchip Technology
Description: 6-PORT BT 60W NMS EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 6
Standard Number: 60950-1
Description: 6-PORT BT 60W NMS EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 6
Standard Number: 60950-1
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3418.64 EUR |
PD-9612GC/AC-EK |
Hersteller: Microchip Technology
Description: 12-PORT BT 90W NMS AC EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 950W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 12
Standard Number: 62368-1
Description: 12-PORT BT 90W NMS AC EU/UK CORD
Packaging: Box
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 950W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 12
Standard Number: 62368-1
auf Bestellung 5 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5699.56 EUR |
PD-9501GC/AC-UK |
Hersteller: Microchip Technology
Description: 1-PORT BT 60W 1G AC UK CORD
Packaging: Bulk
Size / Dimension: 5.94" L x 2.44" W x 1.50" H (150.9mm x 62.0mm x 38.1mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.1 A
Number of Ports: 1
Description: 1-PORT BT 60W 1G AC UK CORD
Packaging: Bulk
Size / Dimension: 5.94" L x 2.44" W x 1.50" H (150.9mm x 62.0mm x 38.1mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.1 A
Number of Ports: 1
Produkt ist nicht verfügbar
PD-9501-10GC/AC-UK |
Hersteller: Microchip Technology
Description: 1-PORT BT 60W 10G AC UK CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.09 A
Number of Ports: 1
Description: 1-PORT BT 60W 10G AC UK CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at
Current - Output: 1.09 A
Number of Ports: 1
Produkt ist nicht verfügbar
PD-9501-10GC/AC-CN |
Hersteller: Microchip Technology
Description: 1-PORT BT 60W 10G AC CN CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 1
Standard Number: 60950-1
Description: 1-PORT BT 60W 10G AC CN CORD
Packaging: Bulk
Size / Dimension: 6.93" L x 2.64" W x 1.51" H (176.0mm x 67.0mm x 38.3mm)
Voltage - Output: 55V
Mounting Type: Desktop
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 60W
Compliance: IEEE802.3af, IEEE802.3at, IEEE802.3bt
Number of Ports: 1
Standard Number: 60950-1
Produkt ist nicht verfügbar
PD-9606GC/AC-US |
Hersteller: Microchip Technology
Description: 6-PORT BT 90W NMS AC US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Description: 6-PORT BT 90W NMS AC US CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 54V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Produkt ist nicht verfügbar
PD-9606GC/AC-AU |
Hersteller: Microchip Technology
Description: 6-PORT BT 90W NMS AC AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Description: 6-PORT BT 90W NMS AC AU CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Produkt ist nicht verfügbar
PD-9606GC/AC-UK |
Hersteller: Microchip Technology
Description: 6-PORT BT 90W NMS AC UK CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Description: 6-PORT BT 90W NMS AC UK CORD
Packaging: Bulk
Size / Dimension: 17.30" L x 10.80" W x 1.75" H (439.4mm x 274.3mm x 44.5mm)
Voltage - Output: 55V
Mounting Type: Rack Mount
Voltage - Input: 100 ~ 240 VAC
Type: Midspan Injector
Operating Temperature: 0°C ~ 40°C
Data Rate: 10/100/1000 Mbps
Approval Agency: CE
Power (Watts) - Per Port: 90W
Compliance: IEEE802.3bt
Current - Output: 1.64 A
Number of Ports: 6
Produkt ist nicht verfügbar
1N5811URS/TR |
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
1N5811URS/TR |
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: UFR,FRR
Packaging: Cut Tape (CT)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
JANTXV1N5811URS/TR |
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
JANS1N5811URS/TR |
Hersteller: Microchip Technology
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: UFR,FRR
Packaging: Tape & Reel (TR)
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Produkt ist nicht verfügbar
UXM15P/TR |
Hersteller: Microchip Technology
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Tape & Reel (TR)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
UXM15P/TR |
Hersteller: Microchip Technology
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Cut Tape (CT)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
Description: 15GHZ PROGRAMMABLE 2/4/8 PRESCAL
Packaging: Cut Tape (CT)
Package / Case: 24-TFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Prescaler
Frequency: 0Hz ~ 20GHz
RF Type: General Purpose
Secondary Attributes: Divide by 2, 4, 5, 6, 7, 8, 9
Supplier Device Package: 24-QFN (4x4)
Produkt ist nicht verfügbar
VTA1-2A0-10M0000000 |
Produkt ist nicht verfügbar
VTA1-2B1-2M04800000 |
Produkt ist nicht verfügbar
MP61010-M42 |
Hersteller: Microchip Technology
Description: GAAS PIN HERMETIC PILL
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.18pF @ 10V, 1MHz
Resistance @ If, F: 1Ohm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Description: GAAS PIN HERMETIC PILL
Packaging: Bag
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.18pF @ 10V, 1MHz
Resistance @ If, F: 1Ohm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Current - Max: 50 mA
Produkt ist nicht verfügbar
MP61012-P00 |
Hersteller: Microchip Technology
Description: GAAS PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.35pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: Chip
Current - Max: 50 mA
Description: GAAS PIN NON HERMETIC CHIP
Packaging: Tray
Package / Case: Die
Diode Type: PIN - Single
Operating Temperature: -55°C ~ 175°C
Capacitance @ Vr, F: 0.35pF @ 10V, 1MHz
Resistance @ If, F: 800mOhm @ 20mA, 1GHz
Voltage - Peak Reverse (Max): 50V
Supplier Device Package: Chip
Current - Max: 50 mA
Produkt ist nicht verfügbar
1N6009B |
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 62 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Description: DIODE ZENER 24V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 62 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
Produkt ist nicht verfügbar
2N3792 |
Hersteller: Microchip Technology
Description: TRANS PNP 80V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Description: TRANS PNP 80V 10A TO3
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 2A, 10A
Current - Collector Cutoff (Max): 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 2V
Supplier Device Package: TO-3
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 5 W
Produkt ist nicht verfügbar
MXSMCGLCE24A |
Hersteller: Microchip Technology
Description: TVS DIODE 24VWM 38.9VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 24VWM 38.9VC SMCG
Packaging: Bulk
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 100pF @ 1MHz
Current - Peak Pulse (10/1000µs): 39A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
JANTX1N3338B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
Produkt ist nicht verfügbar
JANTXV1N3338B |
Hersteller: Microchip Technology
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
Description: ZENER DIODE
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Stud Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-5
Power - Max: 50 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 62.2 V
Produkt ist nicht verfügbar
MCP73223T-C2SI/MF |
Hersteller: Microchip Technology
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
MCP73223T-C2SI/MF |
Hersteller: Microchip Technology
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
Description: IC BAT CNTL IRON PHOS 1-2C 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-VFDFN Exposed Pad
Number of Cells: 1 ~ 2
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Battery Chemistry: Lithium Iron Phosphate
Supplier Device Package: 10-DFN (3x3)
Charge Current - Max: 1.1A
Programmable Features: Current, Timer
Fault Protection: Over Temperature, Over Voltage, Reverse Current
Voltage - Supply (Max): 16V
Battery Pack Voltage: 7.2V
Current - Charging: Constant - Programmable
auf Bestellung 1488 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.8 EUR |
25+ | 4.83 EUR |
100+ | 4.37 EUR |
MAX24287ETK2T |
Hersteller: Microchip Technology
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Tape & Reel (TR)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Tape & Reel (TR)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
Produkt ist nicht verfügbar
MAX24287ETK2T |
Hersteller: Microchip Technology
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Cut Tape (CT)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
Description: IC INTERFACE SPECIALIZED 68TQFN
Packaging: Cut Tape (CT)
Package / Case: 68-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Ethernet
Voltage - Supply: 1.14V ~ 3.465V
Applications: Switch Interfacing
Supplier Device Package: 68-TQFN-EP (8x8)
Produkt ist nicht verfügbar
JAN1N5546DUR-1 |
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Description: DIODE ZENER 33V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 29.7 V
Produkt ist nicht verfügbar
24LC128-I/SNG |
Hersteller: Microchip Technology
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
Qualification: AEC-Q100
Description: IC EEPROM 128KBIT I2C 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 16K x 8
Qualification: AEC-Q100
auf Bestellung 397 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.85 EUR |
25+ | 1.76 EUR |
100+ | 1.69 EUR |
1N4979US/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: E-MELF
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Description: VOLTAGE REGULATOR
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: E-MELF
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
auf Bestellung 101 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
101+ | 19.58 EUR |
1N4979US/TR |
Hersteller: Microchip Technology
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: E-MELF
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
Description: VOLTAGE REGULATOR
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 75 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: E-MELF
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 56 V
auf Bestellung 101 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 21.09 EUR |
JANTXV1N5543CUR-1 |
Hersteller: Microchip Technology
Description: DIODE ZENER 25V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.4 V
Description: DIODE ZENER 25V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 25 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 22.4 V
Produkt ist nicht verfügbar
MPF200TS-1FCSG536I |
Hersteller: Microchip Technology
Description: IC FPGA 300 I/O 536CSPBGA
Packaging: Tray
Package / Case: 536-LFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 0.97V ~ 1.08V
Number of Logic Elements/Cells: 192000
Supplier Device Package: 536-CSPBGA (16x16)
Total RAM Bits: 13619200
Number of I/O: 300
DigiKey Programmable: Not Verified
Description: IC FPGA 300 I/O 536CSPBGA
Packaging: Tray
Package / Case: 536-LFBGA, CSPBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C (TJ)
Voltage - Supply: 0.97V ~ 1.08V
Number of Logic Elements/Cells: 192000
Supplier Device Package: 536-CSPBGA (16x16)
Total RAM Bits: 13619200
Number of I/O: 300
DigiKey Programmable: Not Verified
auf Bestellung 10 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1819.22 EUR |
MSMCJ15A/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MSMCJ15AE3/TR |
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC SMCJ
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SMCJ (DO-214AB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MASMCJ15A |
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
MASMCJ15Ae3 |
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar