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JAN1N6118A JAN1N6118A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 25.1VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6118AUS JAN1N6118AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 25.1VWM 45.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6126A JAN1N6126A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 51.7VWM 97.1VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6126AUS JAN1N6126AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6156A JAN1N6156A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Produkt ist nicht verfügbar
JAN1N829-1 JAN1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/159
Produkt ist nicht verfügbar
JAN1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/159
Produkt ist nicht verfügbar
JAN2N2219 JAN2N2219 Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2219A JAN2N2219A Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2219AL JAN2N2219AL Microchip Technology 8917-lds-0091-datasheet Description: TRANS NPN 50V 0.8A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2222A JAN2N2222A Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A TO218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
auf Bestellung 2589 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.75 EUR
100+ 5.33 EUR
Mindestbestellmenge: 5
JAN2N2222AL JAN2N2222AL Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
JAN2N2222AUB JAN2N2222AUB Microchip Technology 2N2221A%2C%202N2222A.pdf Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
JAN2N2369A JAN2N2369A Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
Jan2N2369AUB Jan2N2369AUB Microchip Technology 8893-lds-0057-datasheet Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
JAN2N2484 JAN2N2484 Microchip Technology 8894-lds-0058-datasheet Description: TRANS NPN 60V 0.05A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
Jan2N2484UB Jan2N2484UB Microchip Technology 8894-lds-0058-datasheet Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
JAN2N2905A JAN2N2905A Microchip Technology 122694-lds-0186-datasheet Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
JAN2N2905AL JAN2N2905AL Microchip Technology 125482-lds-0186-1-datasheet Description: TRANS PNP 60V 0.6A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
JAN2N2906A JAN2N2906A Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2906AUB JAN2N2906AUB Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2907A JAN2N2907A Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 335 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.53 EUR
100+ 6.07 EUR
Mindestbestellmenge: 4
JAN2N2907AL Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
Jan2N2907AUA Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2946A JAN2N2946A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 35V 0.1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/382
Produkt ist nicht verfügbar
JAN2N3019 JAN2N3019 Microchip Technology 122693-lds-0185-datasheet Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
JAN2N3019S JAN2N3019S Microchip Technology 125195-lds-0185-4-datasheet Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
JAN2N3439 JAN2N3439 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JAN2N3439L JAN2N3439L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 350V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JAN2N3440 JAN2N3440 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Produkt ist nicht verfügbar
JAN2N3440L JAN2N3440L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Produkt ist nicht verfügbar
JAN2N3501 JAN2N3501 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
1+32.32 EUR
JAN2N3501L JAN2N3501L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
JAN2N3501UB JAN2N3501UB Microchip Technology 125200-lds-0276-3-datasheet Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
JAN2N3700 JAN2N3700 Microchip Technology 125348-lds-0185-2-datasheet Description: TRANS NPN 80V 1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
JAN2N3700UB JAN2N3700UB Microchip Technology 125349-lds-0185-3-datasheet Description: TRANS NPN 80V 1A 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
JAN2N3735 JAN2N3735 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
JAN2N3735L JAN2N3735L Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
JAN2N3737UB JAN2N3737UB Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
Jan2N3810L Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Produkt ist nicht verfügbar
JAN2N4033 JAN2N4033 Microchip Technology 6070-2n4029-datasheet Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/512
Produkt ist nicht verfügbar
JAN2N5582 JAN2N5582 Microchip Technology 6091-2n5581-datasheet Description: TRANS NPN 50V 0.8A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
Produkt ist nicht verfügbar
JAN2N918UB Microchip Technology 8811-lds-0010-datasheet Description: TRANS NPN 15V 0.05A TO72
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
Produkt ist nicht verfügbar
JANTX1N3613 JANTX1N3613 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 600V 1A AXIAL
Produkt ist nicht verfügbar
JANTX1N3957 JANTX1N3957 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 1KV 1A
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/228
Produkt ist nicht verfügbar
JANTX1N4248 JANTX1N4248 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 800V 1A E3
Packaging: Bulk
Package / Case: E3
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: E3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/286
Produkt ist nicht verfügbar
JANTX1N4249 JANTX1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
JANTX1N4942 JANTX1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/359
Produkt ist nicht verfügbar
JANTX1N4944 JANTX1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
JANTX1N4960 JANTX1N4960 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 12V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Produkt ist nicht verfügbar
JANTX1N4980US JANTX1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N4987 JANTX1N4987 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 160V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N4987US JANTX1N4987US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 160V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N5188 JANTX1N5188 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
Produkt ist nicht verfügbar
JANTX1N5416US JANTX1N5416US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5418 JANTX1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5418US JANTX1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5420 JANTX1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5420US JANTX1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5550 JANTX1N5550 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 200V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N6118A 127891-lds-0277-datasheet
JAN1N6118A
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6118AUS 127892-lds-0277-1-datasheet
JAN1N6118AUS
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6126A 127891-lds-0277-datasheet
JAN1N6126A
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6126AUS 127892-lds-0277-1-datasheet
JAN1N6126AUS
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
JAN1N6156A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JAN1N6156A
Hersteller: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Produkt ist nicht verfügbar
JAN1N829-1 125462-lds-0220-datasheet
JAN1N829-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/159
Produkt ist nicht verfügbar
JAN1N829UR-1 11037-lds-0220-1-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Grade: Military
Qualification: MIL-PRF-19500/159
Produkt ist nicht verfügbar
JAN2N2219 8917-lds-0091-datasheet
JAN2N2219
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2219A 8917-lds-0091-datasheet
JAN2N2219A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2219AL 8917-lds-0091-datasheet
JAN2N2219AL
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
JAN2N2222A 2N2221A%2C%202N2222A.pdf
JAN2N2222A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
auf Bestellung 2589 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.75 EUR
100+ 5.33 EUR
Mindestbestellmenge: 5
JAN2N2222AL 2N2221A%2C%202N2222A.pdf
JAN2N2222AL
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
JAN2N2222AUB 2N2221A%2C%202N2222A.pdf
JAN2N2222AUB
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
JAN2N2369A 8893-lds-0057-datasheet
JAN2N2369A
Hersteller: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
Jan2N2369AUB 8893-lds-0057-datasheet
Jan2N2369AUB
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
JAN2N2484 8894-lds-0058-datasheet
JAN2N2484
Hersteller: Microchip Technology
Description: TRANS NPN 60V 0.05A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
Jan2N2484UB 8894-lds-0058-datasheet
Jan2N2484UB
Hersteller: Microchip Technology
Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
JAN2N2905A 122694-lds-0186-datasheet
JAN2N2905A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
JAN2N2905AL 125482-lds-0186-1-datasheet
JAN2N2905AL
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
JAN2N2906A 8896-lds-0059-datasheet
JAN2N2906A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2906AUB 8896-lds-0059-datasheet
JAN2N2906AUB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2907A 8896-lds-0059-datasheet
JAN2N2907A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 335 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.53 EUR
100+ 6.07 EUR
Mindestbestellmenge: 4
JAN2N2907AL 8896-lds-0059-datasheet
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
Jan2N2907AUA 8896-lds-0059-datasheet
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
JAN2N2946A 124373-lds-0236-datasheet
JAN2N2946A
Hersteller: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: TO-46
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/382
Produkt ist nicht verfügbar
JAN2N3019 122693-lds-0185-datasheet
JAN2N3019
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
JAN2N3019S 125195-lds-0185-4-datasheet
JAN2N3019S
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/391
Produkt ist nicht verfügbar
JAN2N3439 8830-lds-0022-datasheet
JAN2N3439
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JAN2N3439L 124290-lds-0022-1-datasheet
JAN2N3439L
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
JAN2N3440 8830-lds-0022-datasheet
JAN2N3440
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Produkt ist nicht verfügbar
JAN2N3440L 124290-lds-0022-1-datasheet
JAN2N3440L
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Current - Collector Cutoff (Max): 2µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/368
Produkt ist nicht verfügbar
JAN2N3501 125197-lds-0276-datasheet
JAN2N3501
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
auf Bestellung 43 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+32.32 EUR
JAN2N3501L 125198-lds-0276-1-datasheet
JAN2N3501L
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
JAN2N3501UB 125200-lds-0276-3-datasheet
JAN2N3501UB
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Produkt ist nicht verfügbar
JAN2N3700 125348-lds-0185-2-datasheet
JAN2N3700
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
JAN2N3700UB 125349-lds-0185-3-datasheet
JAN2N3700UB
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
JAN2N3735 8978-lds-0173-datasheet
JAN2N3735
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-39
Grade: Military
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
JAN2N3735L 8978-lds-0173-datasheet
JAN2N3735L
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
JAN2N3737UB 8978-lds-0173-datasheet
JAN2N3737UB
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A 3UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/395
Produkt ist nicht verfügbar
Jan2N3810L 8931-lds-0118-datasheet
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Produkt ist nicht verfügbar
JAN2N4033 6070-2n4029-datasheet
JAN2N4033
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/512
Produkt ist nicht verfügbar
JAN2N5582 6091-2n5581-datasheet
JAN2N5582
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46-3
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-46-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
Produkt ist nicht verfügbar
JAN2N918UB 8811-lds-0010-datasheet
Hersteller: Microchip Technology
Description: TRANS NPN 15V 0.05A TO72
Packaging: Bulk
Package / Case: 3-SMD, Non-Standard
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
Produkt ist nicht verfügbar
JANTX1N3613 123512-lds-0190-datasheet
JANTX1N3613
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 1A AXIAL
Produkt ist nicht verfügbar
JANTX1N3957 123512-lds-0190-datasheet
JANTX1N3957
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/228
Produkt ist nicht verfügbar
JANTX1N4248 123513-lds-0191-datasheet
JANTX1N4248
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 1A E3
Packaging: Bulk
Package / Case: E3
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: E3
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/286
Produkt ist nicht verfügbar
JANTX1N4249 123513-lds-0191-datasheet
JANTX1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Produkt ist nicht verfügbar
JANTX1N4942 129281-lds-0295-datasheet
JANTX1N4942
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/359
Produkt ist nicht verfügbar
JANTX1N4944 129281-lds-0295-datasheet
JANTX1N4944
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
JANTX1N4960 10913-sa5-37-datasheet
JANTX1N4960
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 2.5 Ohms
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Produkt ist nicht verfügbar
JANTX1N4980US 11059-sd44a-datasheet
JANTX1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Grade: Military
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N4987 10913-sa5-37-datasheet
JANTX1N4987
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N4987US 11059-sd44a-datasheet
JANTX1N4987US
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 5W D5B
Packaging: Bulk
Tolerance: ±5%
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 160 V
Impedance (Max) (Zzt): 350 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 121.6 V
Grade: Military
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
JANTX1N5188 11517-lds-0216-datasheet
JANTX1N5188
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/424
Produkt ist nicht verfügbar
JANTX1N5416US 11075-lds-0231-1-datasheet
JANTX1N5416US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5418 124360-lds-0231-datasheet
JANTX1N5418
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5418US 11075-lds-0231-1-datasheet
JANTX1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/411
Produkt ist nicht verfügbar
JANTX1N5420 124360-lds-0231-datasheet
JANTX1N5420
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5420US 11075-lds-0231-1-datasheet
JANTX1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
JANTX1N5550 11519-lds-0230-datasheet
JANTX1N5550
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 5A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Military
Qualification: MIL-PRF-19500/420
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