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1N4963US 1N4963US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 16V 5W D5B
Produkt ist nicht verfügbar
1N4964 1N4964 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 18V 5W AXIAL
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.7 EUR
Mindestbestellmenge: 2
1N4965 1N4965 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 20V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 15.2 V
auf Bestellung 127 Stücke:
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2+11.35 EUR
100+ 10.55 EUR
Mindestbestellmenge: 2
1N4965US 1N4965US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 20V 5W D5B
Produkt ist nicht verfügbar
1N4967 1N4967 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 24V 5W AXIAL
Produkt ist nicht verfügbar
1N4969 1N4969 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 30V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
auf Bestellung 146 Stücke:
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2+10.45 EUR
100+ 9.71 EUR
Mindestbestellmenge: 2
1N4969US 1N4969US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 30V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Produkt ist nicht verfügbar
1N4970 1N4970 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 33V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
auf Bestellung 107 Stücke:
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2+10.58 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
1N4970US 1N4970US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 33V 5W D5B
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.79 EUR
Mindestbestellmenge: 2
1N4971 1N4971 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 36V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 320 Stücke:
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2+10.58 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
1N4971US 1N4971US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 36V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 154 Stücke:
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2+13.82 EUR
Mindestbestellmenge: 2
1N4972 1N4972 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 39V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.49 EUR
100+ 9.73 EUR
Mindestbestellmenge: 2
1N4976 1N4976 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 56V 5W AXIAL
Produkt ist nicht verfügbar
1N4976US 1N4976US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 56V 5W D5B
Produkt ist nicht verfügbar
1N4979 1N4979 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 75V 5W AXIAL
Produkt ist nicht verfügbar
1N4979US 1N4979US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 75V 5W D5B
Produkt ist nicht verfügbar
1N4980 1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
1N4980US 1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
1N4988 1N4988 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 180V 5W AXIAL
Produkt ist nicht verfügbar
1N4988US 1N4988US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 180V 5W D5B
Produkt ist nicht verfügbar
1N4989 1N4989 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 200V 5W AXIAL
Produkt ist nicht verfügbar
1N4989US 1N4989US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
1N5181 Microchip Technology 10953-lds-0266-datasheet Description: DIODE GP 4KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Produkt ist nicht verfügbar
1N5182 Microchip Technology 10953-lds-0266-datasheet Description: DIODE GP 5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Produkt ist nicht verfügbar
1N5183 Microchip Technology 10953-lds-0266-datasheet Description: DIODE GP 7.5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
Produkt ist nicht verfügbar
1N5184 Microchip Technology 10953-lds-0266-datasheet Description: DIODE GP 10KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Produkt ist nicht verfügbar
1N5186 1N5186 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
1N5186US 1N5186US Microchip Technology 11078-sd61a-datasheet Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
1N5187 1N5187 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
1N5187US 1N5187US Microchip Technology 11078-sd61a-datasheet Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
1N5188 1N5188 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
1N5188US 1N5188US Microchip Technology 11078-sd61a-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
1N5189 1N5189 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
1N5189US 1N5189US Microchip Technology 11078-sd61a-datasheet Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
1N5190 1N5190 Microchip Technology 11517-lds-0216-datasheet Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
1N5194 1N5194 Microchip Technology 8848-lds-0031-datasheet Description: DIODE GEN PURP 70V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
1N5194UR Microchip Technology 8850-lds-0032-datasheet Description: DIODE GEN PURP 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
1N5195 1N5195 Microchip Technology 8852-lds-0033-datasheet Description: DIODE GEN PURP 180V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
1N5195UR Microchip Technology 8854-lds-0034-datasheet Description: DIODE GP 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
1N5196 1N5196 Microchip Technology 8856-lds-0035-datasheet Description: DIODE GEN PURP 225V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
1N5196UR Microchip Technology 8858-lds-0036-datasheet Description: DIODE GP 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
1N5415 1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
1N5416 1N5416 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.03 EUR
100+ 9.33 EUR
Mindestbestellmenge: 2
1N5416US 1N5416US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.02 EUR
100+ 15.8 EUR
Mindestbestellmenge: 2
1N5417 1N5417 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
1N5417US 1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 200V 3A D5B
Produkt ist nicht verfügbar
1N5418 1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.88 EUR
Mindestbestellmenge: 2
1N5418US 1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
1N5419 1N5419 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 500V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
1N5419US 1N5419US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
1N5420 1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5420US 1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5533B 1N5533B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
1N5534B 1N5534B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Produkt ist nicht verfügbar
1N5535B 1N5535B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Produkt ist nicht verfügbar
1N5536B 1N5536B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
1N5537B 1N5537B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 17V 500MW DO35
Produkt ist nicht verfügbar
1N5538B 1N5538B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
1N5539B 1N5539B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
1N5546B 1N5546B Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
1N4963US 11059-sd44a-datasheet
1N4963US
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 5W D5B
Produkt ist nicht verfügbar
1N4964 10913-sa5-37-datasheet
1N4964
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 5W AXIAL
auf Bestellung 81 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.7 EUR
Mindestbestellmenge: 2
1N4965 10913-sa5-37-datasheet
1N4965
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 4.5 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 15.2 V
auf Bestellung 127 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.35 EUR
100+ 10.55 EUR
Mindestbestellmenge: 2
1N4965US 11059-sd44a-datasheet
1N4965US
Hersteller: Microchip Technology
Description: DIODE ZENER 20V 5W D5B
Produkt ist nicht verfügbar
1N4967 10913-sa5-37-datasheet
1N4967
Hersteller: Microchip Technology
Description: DIODE ZENER 24V 5W AXIAL
Produkt ist nicht verfügbar
1N4969 10913-sa5-37-datasheet
1N4969
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
auf Bestellung 146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.45 EUR
100+ 9.71 EUR
Mindestbestellmenge: 2
1N4969US 11059-sd44a-datasheet
1N4969US
Hersteller: Microchip Technology
Description: DIODE ZENER 30V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 30 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 22.8 V
Produkt ist nicht verfügbar
1N4970 10913-sa5-37-datasheet
1N4970
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 10 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 25.1 V
auf Bestellung 107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.58 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
1N4970US 11059-sd44a-datasheet
1N4970US
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 5W D5B
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.79 EUR
Mindestbestellmenge: 2
1N4971 10913-sa5-37-datasheet
1N4971
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.58 EUR
100+ 9.83 EUR
Mindestbestellmenge: 2
1N4971US 11059-sd44a-datasheet
1N4971US
Hersteller: Microchip Technology
Description: DIODE ZENER 36V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: D-5B
Part Status: Active
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 27.4 V
auf Bestellung 154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.82 EUR
Mindestbestellmenge: 2
1N4972 10913-sa5-37-datasheet
1N4972
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 39 V
Impedance (Max) (Zzt): 14 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 29.7 V
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.49 EUR
100+ 9.73 EUR
Mindestbestellmenge: 2
1N4976 10913-sa5-37-datasheet
1N4976
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W AXIAL
Produkt ist nicht verfügbar
1N4976US 11059-sd44a-datasheet
1N4976US
Hersteller: Microchip Technology
Description: DIODE ZENER 56V 5W D5B
Produkt ist nicht verfügbar
1N4979 10913-sa5-37-datasheet
1N4979
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W AXIAL
Produkt ist nicht verfügbar
1N4979US 11059-sd44a-datasheet
1N4979US
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 5W D5B
Produkt ist nicht verfügbar
1N4980 10913-sa5-37-datasheet
1N4980
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: E, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
1N4980US 11059-sd44a-datasheet
1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Tolerance: ±5%
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 82 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: D-5B
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Produkt ist nicht verfügbar
1N4988 10913-sa5-37-datasheet
1N4988
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W AXIAL
Produkt ist nicht verfügbar
1N4988US 11059-sd44a-datasheet
1N4988US
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 5W D5B
Produkt ist nicht verfügbar
1N4989 10913-sa5-37-datasheet
1N4989
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W AXIAL
Produkt ist nicht verfügbar
1N4989US 11059-sd44a-datasheet
1N4989US
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 5W D5B
Produkt ist nicht verfügbar
1N5181 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 4KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 4000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Produkt ist nicht verfügbar
1N5182 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 5000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Produkt ist nicht verfügbar
1N5183 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 7.5KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 7500 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 7500 V
Produkt ist nicht verfügbar
1N5184 10953-lds-0266-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 10KV 100MA S AXIAL
Packaging: Bulk
Package / Case: S, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 100mA
Supplier Device Package: S, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 10000 V
Voltage - Forward (Vf) (Max) @ If: 10 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 10000 V
Produkt ist nicht verfügbar
1N5186 11517-lds-0216-datasheet
1N5186
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
1N5186US 11078-sd61a-datasheet
1N5186US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Produkt ist nicht verfügbar
1N5187 11517-lds-0216-datasheet
1N5187
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
1N5187US 11078-sd61a-datasheet
1N5187US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Produkt ist nicht verfügbar
1N5188 11517-lds-0216-datasheet
1N5188
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
1N5188US 11078-sd61a-datasheet
1N5188US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 400 V
Produkt ist nicht verfügbar
1N5189 11517-lds-0216-datasheet
1N5189
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
1N5189US 11078-sd61a-datasheet
1N5189US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 500 V
Produkt ist nicht verfügbar
1N5190 11517-lds-0216-datasheet
1N5190
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Produkt ist nicht verfügbar
1N5194 8848-lds-0031-datasheet
1N5194
Hersteller: Microchip Technology
Description: DIODE GEN PURP 70V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
1N5194UR 8850-lds-0032-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 70V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 70 V
Produkt ist nicht verfügbar
1N5195 8852-lds-0033-datasheet
1N5195
Hersteller: Microchip Technology
Description: DIODE GEN PURP 180V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
1N5195UR 8854-lds-0034-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 180V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
Produkt ist nicht verfügbar
1N5196 8856-lds-0035-datasheet
1N5196
Hersteller: Microchip Technology
Description: DIODE GEN PURP 225V 200MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
1N5196UR 8858-lds-0036-datasheet
Hersteller: Microchip Technology
Description: DIODE GP 225V 200MA DO213AA
Packaging: Bulk
Package / Case: DO-213AA (Glass)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 225 V
Produkt ist nicht verfügbar
1N5415 124360-lds-0231-datasheet
1N5415
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Produkt ist nicht verfügbar
1N5416 124360-lds-0231-datasheet
1N5416
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 447 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.03 EUR
100+ 9.33 EUR
Mindestbestellmenge: 2
1N5416US 11075-lds-0231-1-datasheet
1N5416US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 100V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
auf Bestellung 116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+17.02 EUR
100+ 15.8 EUR
Mindestbestellmenge: 2
1N5417 124360-lds-0231-datasheet
1N5417
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A B AXIAL
Packaging: Bulk
Package / Case: Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Produkt ist nicht verfügbar
1N5417US 11075-lds-0231-1-datasheet
1N5417US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A D5B
Produkt ist nicht verfügbar
1N5418 124360-lds-0231-datasheet
1N5418
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A B SQ-MELF
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 51 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.88 EUR
Mindestbestellmenge: 2
1N5418US 11075-lds-0231-1-datasheet
1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
1N5419 124360-lds-0231-datasheet
1N5419
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
1N5419US 11075-lds-0231-1-datasheet
1N5419US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 500V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Produkt ist nicht verfügbar
1N5420 124360-lds-0231-datasheet
1N5420
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5420US 11075-lds-0231-1-datasheet
1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5533B 123956-lds-0037-1-datasheet
1N5533B
Hersteller: Microchip Technology
Description: DIODE ZENER 13V 500MW DO35
Produkt ist nicht verfügbar
1N5534B 123956-lds-0037-1-datasheet
1N5534B
Hersteller: Microchip Technology
Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 101 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Produkt ist nicht verfügbar
1N5535B 123956-lds-0037-1-datasheet
1N5535B
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 102 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Produkt ist nicht verfügbar
1N5536B 123956-lds-0037-1-datasheet
1N5536B
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
Produkt ist nicht verfügbar
1N5537B 123956-lds-0037-1-datasheet
1N5537B
Hersteller: Microchip Technology
Description: DIODE ZENER 17V 500MW DO35
Produkt ist nicht verfügbar
1N5538B 123956-lds-0037-1-datasheet
1N5538B
Hersteller: Microchip Technology
Description: DIODE ZENER 18V 500MW DO35
Produkt ist nicht verfügbar
1N5539B 123956-lds-0037-1-datasheet
1N5539B
Hersteller: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Produkt ist nicht verfügbar
1N5546B 123956-lds-0037-1-datasheet
1N5546B
Hersteller: Microchip Technology
Description: DIODE ZENER 33V 500MW DO35
Produkt ist nicht verfügbar
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