Suchergebnisse für "10nb37" : 17
Art der Ansicht :
Mindestbestellmenge: 21
Mindestbestellmenge: 21
Mindestbestellmenge: 3
Mindestbestellmenge: 9
| Foto | Bezeichnung | Hersteller | Beschreibung |
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STGB10NB37LZT4 Produktcode: 34446 |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: D PAK Vces: 410 Vce: 01.02.2015 Ic 25: 20 Ic 100: 10 |
verfügbar: 102 Stück
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STGB10NB37LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 440V Collector current: 20A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems |
auf Bestellung 621 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NB37LZT4 | STMicroelectronics |
Category: SMD IGBT transistors Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems Type of transistor: IGBT Collector-emitter voltage: 440V Collector current: 20A Power dissipation: 125W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Features of semiconductor devices: ESD protected gate; internally clamped; logic level Application: ignition systems Anzahl je Verpackung: 1 Stücke |
auf Bestellung 621 Stücke: Lieferzeit 7-14 Tag (e) |
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STGB10NB37LZT4 | STMicroelectronics |
Description: IGBT 440V 20A 125W D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W |
auf Bestellung 799 Stücke: Lieferzeit 21-28 Tag (e) |
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| STGB10NB37LZT4 | STMicroelectronics |
IGBT Transistors 10 A - 410 V Int Clamped IGBT |
auf Bestellung 1000 Stücke: Lieferzeit 98-112 Tag (e) |
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| STGB10NB37 |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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| STGB10NB37LZ; IGBT N-chanal; 20A 18V 125W; Корпус: D2PAK (TO-263); STM |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 1996 Stücke: Lieferzeit 7-21 Tag (e) |
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| Транзистор IGBT STGB10NB37LZT4 20A 440V D2PAK |
auf Bestellung 22 Stücke: Lieferzeit 14-21 Tag (e) |
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STGB10NB37LZ | STMicroelectronics |
 Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK Tube |
Produkt ist nicht verfügbar |
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STGB10NB37LZ | STMicroelectronics |
Description: IGBT 440V 20A 125W D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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STGB10NB37LZT4 | STMicroelectronics |
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| STGB10NB37LZT4 | STMicroelectronics |
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STGB10NB37LZT4 | STMicroelectronics |
Description: IGBT 440V 20A 125W D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
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STGP10NB37LZ | STMicroelectronics |
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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STGP10NB37LZ | STMicroelectronics |
Description: IGBT 440V 20A 125W TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A Supplier Device Package: TO-220 Td (on/off) @ 25°C: 1.3µs/8µs Switching Energy: 2.4mJ (on), 5mJ (off) Test Condition: 328V, 10A, 1kOhm, 5V Gate Charge: 28 nC Part Status: Obsolete Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 440 V Current - Collector Pulsed (Icm): 40 A Power - Max: 125 W |
Produkt ist nicht verfügbar |
| STGB10NB37LZT4 Produktcode: 34446 |
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Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: D PAK
Vces: 410
Vce: 01.02.2015
Ic 25: 20
Ic 100: 10
Gehäuse: D PAK
Vces: 410
Vce: 01.02.2015
Ic 25: 20
Ic 100: 10
verfügbar: 102 Stück
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 1.58 EUR |
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
auf Bestellung 621 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.43 EUR |
| 24+ | 3.09 EUR |
| 31+ | 2.35 EUR |
| 33+ | 2.22 EUR |
| STGB10NB37LZT4 |
|
Hersteller: STMicroelectronics
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; 440V; 20A; 125W; D2PAK; ignition systems
Type of transistor: IGBT
Collector-emitter voltage: 440V
Collector current: 20A
Power dissipation: 125W
Case: D2PAK
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Features of semiconductor devices: ESD protected gate; internally clamped; logic level
Application: ignition systems
Anzahl je Verpackung: 1 Stücke
auf Bestellung 621 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 3.43 EUR |
| 24+ | 3.09 EUR |
| 31+ | 2.35 EUR |
| 33+ | 2.22 EUR |
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Description: IGBT 440V 20A 125W D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
auf Bestellung 799 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.44 EUR |
| 10+ | 7.93 EUR |
| 100+ | 6.42 EUR |
| 500+ | 5.7 EUR |
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
IGBT Transistors 10 A - 410 V Int Clamped IGBT
IGBT Transistors 10 A - 410 V Int Clamped IGBT
auf Bestellung 1000 Stücke:
Lieferzeit 98-112 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 6.29 EUR |
| 11+ | 5.15 EUR |
| 100+ | 4 EUR |
| 250+ | 3.87 EUR |
| 500+ | 3.41 EUR |
| 1000+ | 2.33 EUR |
| 2000+ | 2.22 EUR |
| STGB10NB37LZ; IGBT N-chanal; 20A 18V 125W; Корпус: D2PAK (TO-263); STM |
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)| STGB10NB37LZ | |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK Tube
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK Tube
Produkt ist nicht verfügbar
| STGB10NB37LZ | |
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Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Description: IGBT 440V 20A 125W D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
| STGB10NB37LZT4 |
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Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Description: IGBT 440V 20A 125W D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar
| STGP10NB37LZ |
|
Hersteller: STMicroelectronics
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Trans IGBT Chip N-CH 440V 20A 125000mW Automotive 3-Pin(3+Tab) TO-220AB Tube
Produkt ist nicht verfügbar
| STGP10NB37LZ |
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Hersteller: STMicroelectronics
Description: IGBT 440V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Description: IGBT 440V 20A 125W TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 4.5V, 10A
Supplier Device Package: TO-220
Td (on/off) @ 25°C: 1.3µs/8µs
Switching Energy: 2.4mJ (on), 5mJ (off)
Test Condition: 328V, 10A, 1kOhm, 5V
Gate Charge: 28 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 440 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 125 W
Produkt ist nicht verfügbar