Suchergebnisse für "12N50" : > 60

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AOT12N50 AOT12N50 ALPHA & OMEGA SEMICONDUCTOR AOTF12N50-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.7 EUR
50+ 1.46 EUR
59+ 1.22 EUR
62+ 1.16 EUR
500+ 1.12 EUR
Mindestbestellmenge: 43
AOT12N50 AOT12N50 ALPHA & OMEGA SEMICONDUCTOR AOTF12N50-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.7 EUR
50+ 1.46 EUR
59+ 1.22 EUR
62+ 1.16 EUR
500+ 1.12 EUR
Mindestbestellmenge: 43
AOT12N50 ALPHA&OMEGA AOT12N50.pdf Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.82 EUR
Mindestbestellmenge: 20
C12N50Z4 C12N50Z4 Anaren C12N50Z4-3364878.pdf High Frequency/RF Resistors
auf Bestellung 1105 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.61 EUR
10+ 7.7 EUR
25+ 6.92 EUR
50+ 6.68 EUR
100+ 5.75 EUR
250+ 4.99 EUR
500+ 4.5 EUR
Mindestbestellmenge: 7
C12N50Z4 TTM Technologies, Inc. C12N50Z4.pdf Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Part Status: Active
auf Bestellung 134 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.63 EUR
10+ 7.7 EUR
25+ 6.93 EUR
100+ 6.31 EUR
Mindestbestellmenge: 4
CHV1812N500100JCT CHV1812N500100JCT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500101JCT CHV1812N500101JCT Cal-Chip Electronics, Inc. chv_series-1.pdf Description: CAP CER 100PF 500V C0G/NP0 1812
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.08 EUR
2000+ 1.03 EUR
Mindestbestellmenge: 1000
CHV1812N500101JCT CHV1812N500101JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG 100PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 100 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.31 EUR
Mindestbestellmenge: 1000
CHV1812N500102KXT CHV1812N500102KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R 1000PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
9+2.96 EUR
12+ 2.21 EUR
50+ 2.02 EUR
100+ 1.65 EUR
500+ 1.32 EUR
Mindestbestellmenge: 9
CHV1812N500103JCT CHV1812N500103JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG .01UF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+2.99 EUR
Mindestbestellmenge: 1000
CHV1812N500103KXT CHV1812N500103KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.72 EUR
Mindestbestellmenge: 1000
CHV1812N500104KXT CHV1812N500104KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.66 EUR
23+ 1.16 EUR
50+ 0.98 EUR
100+ 0.8 EUR
500+ 0.66 EUR
Mindestbestellmenge: 16
CHV1812N500104MXT CHV1812N500104MXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.65 EUR
Mindestbestellmenge: 1000
CHV1812N500153KXT CHV1812N500153KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.72 EUR
Mindestbestellmenge: 1000
CHV1812N500154KXT CHV1812N500154KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
500+1.05 EUR
Mindestbestellmenge: 500
CHV1812N500222JCT CHV1812N500222JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.9 EUR
Mindestbestellmenge: 1000
CHV1812N500223KXT CHV1812N500223KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.05 EUR
Mindestbestellmenge: 1000
CHV1812N500224KXT CHV1812N500224KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
700+0.94 EUR
Mindestbestellmenge: 700
CHV1812N500331JCT CHV1812N500331JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.84 EUR
Mindestbestellmenge: 1000
CHV1812N500332JCT CHV1812N500332JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP 1812 COG 3300PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.09 EUR
Mindestbestellmenge: 1000
CHV1812N500333KXT CHV1812N500333KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .033UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.033 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500334KXT CHV1812N500334KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
500+1.15 EUR
Mindestbestellmenge: 500
CHV1812N500472JCT CHV1812N500472JCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.02 EUR
Mindestbestellmenge: 1000
CHV1812N500472KCT CHV1812N500472KCT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 COG 4700PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500473KXT CHV1812N500473KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+0.84 EUR
Mindestbestellmenge: 1000
CHV1812N500474KXT CHV1812N500474KXT Cal-Chip Electronics, Inc. gmc_series.pdf Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
500+0.73 EUR
Mindestbestellmenge: 500
FDB12N50TM FDB12N50TM onsemi / Fairchild FDB12N50TM_D-2312093.pdf MOSFET 500V N-CH MOSFET
auf Bestellung 767 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.38 EUR
12+ 4.47 EUR
100+ 3.56 EUR
250+ 3.28 EUR
500+ 3.12 EUR
800+ 2.56 EUR
2400+ 2.42 EUR
Mindestbestellmenge: 10
FDB12N50UTM FDB12N50UTM Fairchild Semiconductor FDB12N50U.pdf?t.download=true&u=ovmfp3 Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Bulk
Part Status: Active
auf Bestellung 2040 Stücke:
Lieferzeit 21-28 Tag (e)
333+2.16 EUR
Mindestbestellmenge: 333
FDPF12N50FT FDPF12N50FT Fairchild Semiconductor FAIRS46306-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
auf Bestellung 35145 Stücke:
Lieferzeit 21-28 Tag (e)
286+2.52 EUR
Mindestbestellmenge: 286
FDPF12N50NZ FDPF12N50NZ onsemi fdpf12n50nz-d.pdf Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
auf Bestellung 1102 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.63 EUR
50+ 3.72 EUR
100+ 3.06 EUR
500+ 2.59 EUR
1000+ 2.2 EUR
Mindestbestellmenge: 6
FDPF12N50T FDPF12N50T ONSEMI FDP12N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.43 EUR
33+ 2.19 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDPF12N50T FDPF12N50T ONSEMI FDP12N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)
30+2.43 EUR
33+ 2.19 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDPF12N50T FDPF12N50T onsemi fdpf12n50t-d.pdf Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V
auf Bestellung 941 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.32 EUR
50+ 5.08 EUR
100+ 4.18 EUR
500+ 3.54 EUR
Mindestbestellmenge: 5
FQB12N50TM FQB12N50TM Fairchild Semiconductor Description: MOSFET N-CH 500V 12.1A
Packaging: Bulk
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
258+2.79 EUR
Mindestbestellmenge: 258
HGTH12N50C1D Harris Corporation HRISD027-3-33.pdf?t.download=true&u=5oefqw Description: 12A, 500V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Supplier Device Package: TO-218 Isolated
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 17.5 A
Power - Max: 75 W
auf Bestellung 483 Stücke:
Lieferzeit 21-28 Tag (e)
121+5.98 EUR
Mindestbestellmenge: 121
HGTH12N50CID Harris Corporation HGTH12N50.pdf?t.download=true&u=ovmfp3 Description: 12A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1374 Stücke:
Lieferzeit 21-28 Tag (e)
121+5.98 EUR
Mindestbestellmenge: 121
IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.68 EUR
18+ 4.2 EUR
22+ 3.33 EUR
23+ 3.16 EUR
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IXFA12N50P IXFA12N50P IXYS IXF_12N50P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.68 EUR
18+ 4.2 EUR
22+ 3.33 EUR
23+ 3.16 EUR
Mindestbestellmenge: 16
IXFA12N50P IXFA12N50P IXYS media-3321540.pdf MOSFET 500V 12A
auf Bestellung 623 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.01 EUR
10+ 8.42 EUR
50+ 7.15 EUR
100+ 6.24 EUR
250+ 6.06 EUR
500+ 5.67 EUR
1000+ 5.25 EUR
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IXFP12N50P IXFP12N50P IXYS media-3321540.pdf MOSFET HiPERFET Id12 BVdass500
auf Bestellung 517 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.65 EUR
10+ 8.03 EUR
50+ 6.84 EUR
100+ 5.95 EUR
250+ 5.82 EUR
500+ 5.3 EUR
1000+ 4.97 EUR
Mindestbestellmenge: 6
IXFP12N50P IXFP12N50P IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.57 EUR
10+ 8.03 EUR
100+ 6.5 EUR
Mindestbestellmenge: 3
IXTA12N50P IXTA12N50P IXYS media-3319745.pdf MOSFET 12.0 Amps 500 V 0.5 Ohm Rds
auf Bestellung 544 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.46 EUR
10+ 7.93 EUR
50+ 7.64 EUR
100+ 6.4 EUR
250+ 6.29 EUR
500+ 5.69 EUR
1000+ 4.94 EUR
Mindestbestellmenge: 6
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
IXTP12N50P IXTP12N50P IXYS IXTA12N50P-DTE.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
6+ 11.91 EUR
17+ 4.2 EUR
250+ 2.57 EUR
Mindestbestellmenge: 5
IXTP12N50P IXTP12N50P IXYS DS99322F(IXTA-TI-TP12N50P).pdf Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 73 Stücke:
Lieferzeit 21-28 Tag (e)
3+9 EUR
50+ 7.13 EUR
Mindestbestellmenge: 3
IXTP12N50PM IXYS/Littelfuse littelfuse_discrete_mosfets_n-channel_standard_ixtp12n50pm_datasheet.pdf.pdf N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
2+6.24 EUR
10+ 5.37 EUR
100+ 4.73 EUR
Mindestbestellmenge: 2
LMDP-512-N50-WD6Q18.0-1-RH LMDP-512-N50-WD6Q18.0-1-RH Omnetics Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
1+983.06 EUR
NTB12N50T4 NTB12N50T4 onsemi ONSMS32473-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3989 Stücke:
Lieferzeit 21-28 Tag (e)
197+3.67 EUR
Mindestbestellmenge: 197
SIHA12N50E-E3 SIHA12N50E-E3 Vishay / Siliconix siha12n50e.pdf MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 519 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.93 EUR
15+ 3.64 EUR
100+ 2.91 EUR
250+ 2.76 EUR
500+ 2.42 EUR
1000+ 1.98 EUR
5000+ 1.92 EUR
Mindestbestellmenge: 14
SIHA12N50E-E3 SIHA12N50E-E3 Vishay Siliconix siha12n50e.pdf Description: MOSFET N-CH 500V 10.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
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SIHA12N50E-GE3 SIHA12N50E-GE3 Vishay Siliconix siha12n50e.pdf Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 909 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.32 EUR
10+ 3.59 EUR
100+ 2.86 EUR
500+ 2.42 EUR
Mindestbestellmenge: 7
SIHB12N50E-GE3 SIHB12N50E-GE3 Vishay / Siliconix sihb12n50e.pdf MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 116 Stücke:
Lieferzeit 14-28 Tag (e)
10+5.67 EUR
12+ 4.71 EUR
100+ 3.74 EUR
250+ 3.46 EUR
500+ 3.3 EUR
1000+ 2.6 EUR
2000+ 2.54 EUR
Mindestbestellmenge: 10
SIHD12N50E-GE3 SIHD12N50E-GE3 Vishay / Siliconix sihd12n50e.pdf MOSFET 500V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 5007 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.19 EUR
19+ 2.76 EUR
100+ 2.36 EUR
500+ 2.15 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 13
SIHD12N50E-GE3 SIHD12N50E-GE3 Vishay Siliconix sihd12n50e.pdf Description: MOSFET N-CH 550V 10.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 2993 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.16 EUR
10+ 3.44 EUR
100+ 2.74 EUR
500+ 2.32 EUR
1000+ 1.97 EUR
Mindestbestellmenge: 7
SIHF12N50C-E3 SIHF12N50C-E3 Vishay Siliconix sihp12n5.pdf Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 855 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.14 EUR
50+ 9.62 EUR
100+ 8.25 EUR
500+ 7.33 EUR
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SIHP12N50C-E3 SIHP12N50C-E3 Vishay / Siliconix sihp12n5.pdf MOSFET N-Channel 500V
auf Bestellung 2211 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.89 EUR
10+ 9.15 EUR
25+ 8.63 EUR
100+ 7.41 EUR
250+ 6.99 EUR
500+ 6.58 EUR
1000+ 5.28 EUR
Mindestbestellmenge: 5
SIHP12N50E-BE3 SIHP12N50E-BE3 Vishay / Siliconix sihp12n50e.pdf MOSFET N-CHANNEL 500V
auf Bestellung 1641 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.32 EUR
15+ 3.61 EUR
100+ 2.86 EUR
250+ 2.63 EUR
500+ 2.39 EUR
1000+ 2.35 EUR
2500+ 2.3 EUR
Mindestbestellmenge: 13
SIHP12N50E-BE3 SIHP12N50E-BE3 Vishay Siliconix sihp12n50e.pdf Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 982 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.29 EUR
50+ 3.45 EUR
100+ 2.84 EUR
500+ 2.4 EUR
Mindestbestellmenge: 7
SIHP12N50E-GE3 SIHP12N50E-GE3 VISHAY sihp12n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
37+ 1.94 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 34
SIHP12N50E-GE3 SIHP12N50E-GE3 VISHAY sihp12n50e.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)
34+2.16 EUR
37+ 1.94 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 34
AOT12N50 AOTF12N50-DTE.pdf
AOT12N50
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.7 EUR
50+ 1.46 EUR
59+ 1.22 EUR
62+ 1.16 EUR
500+ 1.12 EUR
Mindestbestellmenge: 43
AOT12N50 AOTF12N50-DTE.pdf
AOT12N50
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.7 EUR
50+ 1.46 EUR
59+ 1.22 EUR
62+ 1.16 EUR
500+ 1.12 EUR
Mindestbestellmenge: 43
AOT12N50 AOT12N50.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.82 EUR
Mindestbestellmenge: 20
C12N50Z4 C12N50Z4-3364878.pdf
C12N50Z4
Hersteller: Anaren
High Frequency/RF Resistors
auf Bestellung 1105 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.61 EUR
10+ 7.7 EUR
25+ 6.92 EUR
50+ 6.68 EUR
100+ 5.75 EUR
250+ 4.99 EUR
500+ 4.5 EUR
Mindestbestellmenge: 7
C12N50Z4 C12N50Z4.pdf
Hersteller: TTM Technologies, Inc.
Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Part Status: Active
auf Bestellung 134 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.63 EUR
10+ 7.7 EUR
25+ 6.93 EUR
100+ 6.31 EUR
Mindestbestellmenge: 4
CHV1812N500100JCT chv_series-1.pdf
CHV1812N500100JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500101JCT chv_series-1.pdf
CHV1812N500101JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: CAP CER 100PF 500V C0G/NP0 1812
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.08 EUR
2000+ 1.03 EUR
Mindestbestellmenge: 1000
CHV1812N500101JCT gmc_series.pdf
CHV1812N500101JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 100PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 100 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.31 EUR
Mindestbestellmenge: 1000
CHV1812N500102KXT gmc_series.pdf
CHV1812N500102KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R 1000PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+2.96 EUR
12+ 2.21 EUR
50+ 2.02 EUR
100+ 1.65 EUR
500+ 1.32 EUR
Mindestbestellmenge: 9
CHV1812N500103JCT gmc_series.pdf
CHV1812N500103JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG .01UF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+2.99 EUR
Mindestbestellmenge: 1000
CHV1812N500103KXT gmc_series.pdf
CHV1812N500103KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.72 EUR
Mindestbestellmenge: 1000
CHV1812N500104KXT gmc_series.pdf
CHV1812N500104KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.66 EUR
23+ 1.16 EUR
50+ 0.98 EUR
100+ 0.8 EUR
500+ 0.66 EUR
Mindestbestellmenge: 16
CHV1812N500104MXT gmc_series.pdf
CHV1812N500104MXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.65 EUR
Mindestbestellmenge: 1000
CHV1812N500153KXT gmc_series.pdf
CHV1812N500153KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.72 EUR
Mindestbestellmenge: 1000
CHV1812N500154KXT gmc_series.pdf
CHV1812N500154KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+1.05 EUR
Mindestbestellmenge: 500
CHV1812N500222JCT gmc_series.pdf
CHV1812N500222JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.9 EUR
Mindestbestellmenge: 1000
CHV1812N500223KXT gmc_series.pdf
CHV1812N500223KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.05 EUR
Mindestbestellmenge: 1000
CHV1812N500224KXT gmc_series.pdf
CHV1812N500224KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
700+0.94 EUR
Mindestbestellmenge: 700
CHV1812N500331JCT gmc_series.pdf
CHV1812N500331JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.84 EUR
Mindestbestellmenge: 1000
CHV1812N500332JCT gmc_series.pdf
CHV1812N500332JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP 1812 COG 3300PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.09 EUR
Mindestbestellmenge: 1000
CHV1812N500333KXT gmc_series.pdf
CHV1812N500333KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .033UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.033 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500334KXT gmc_series.pdf
CHV1812N500334KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+1.15 EUR
Mindestbestellmenge: 500
CHV1812N500472JCT gmc_series.pdf
CHV1812N500472JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.02 EUR
Mindestbestellmenge: 1000
CHV1812N500472KCT gmc_series.pdf
CHV1812N500472KCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.16 EUR
Mindestbestellmenge: 1000
CHV1812N500473KXT gmc_series.pdf
CHV1812N500473KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+0.84 EUR
Mindestbestellmenge: 1000
CHV1812N500474KXT gmc_series.pdf
CHV1812N500474KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+0.73 EUR
Mindestbestellmenge: 500
FDB12N50TM FDB12N50TM_D-2312093.pdf
FDB12N50TM
Hersteller: onsemi / Fairchild
MOSFET 500V N-CH MOSFET
auf Bestellung 767 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.38 EUR
12+ 4.47 EUR
100+ 3.56 EUR
250+ 3.28 EUR
500+ 3.12 EUR
800+ 2.56 EUR
2400+ 2.42 EUR
Mindestbestellmenge: 10
FDB12N50UTM FDB12N50U.pdf?t.download=true&u=ovmfp3
FDB12N50UTM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Bulk
Part Status: Active
auf Bestellung 2040 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
333+2.16 EUR
Mindestbestellmenge: 333
FDPF12N50FT FAIRS46306-1.pdf?t.download=true&u=5oefqw
FDPF12N50FT
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
auf Bestellung 35145 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
286+2.52 EUR
Mindestbestellmenge: 286
FDPF12N50NZ fdpf12n50nz-d.pdf
FDPF12N50NZ
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
auf Bestellung 1102 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.63 EUR
50+ 3.72 EUR
100+ 3.06 EUR
500+ 2.59 EUR
1000+ 2.2 EUR
Mindestbestellmenge: 6
FDPF12N50T FDP12N50.pdf
FDPF12N50T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.19 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDPF12N50T FDP12N50.pdf
FDPF12N50T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+2.43 EUR
33+ 2.19 EUR
43+ 1.67 EUR
46+ 1.57 EUR
Mindestbestellmenge: 30
FDPF12N50T fdpf12n50t-d.pdf
FDPF12N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V
auf Bestellung 941 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.32 EUR
50+ 5.08 EUR
100+ 4.18 EUR
500+ 3.54 EUR
Mindestbestellmenge: 5
FQB12N50TM
FQB12N50TM
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 12.1A
Packaging: Bulk
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
258+2.79 EUR
Mindestbestellmenge: 258
HGTH12N50C1D HRISD027-3-33.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: 12A, 500V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Supplier Device Package: TO-218 Isolated
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 17.5 A
Power - Max: 75 W
auf Bestellung 483 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
121+5.98 EUR
Mindestbestellmenge: 121
HGTH12N50CID HGTH12N50.pdf?t.download=true&u=ovmfp3
Hersteller: Harris Corporation
Description: 12A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1374 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
121+5.98 EUR
Mindestbestellmenge: 121
IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.68 EUR
18+ 4.2 EUR
22+ 3.33 EUR
23+ 3.16 EUR
Mindestbestellmenge: 16
IXFA12N50P IXF_12N50P.pdf
IXFA12N50P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.68 EUR
18+ 4.2 EUR
22+ 3.33 EUR
23+ 3.16 EUR
Mindestbestellmenge: 16
IXFA12N50P media-3321540.pdf
IXFA12N50P
Hersteller: IXYS
MOSFET 500V 12A
auf Bestellung 623 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.01 EUR
10+ 8.42 EUR
50+ 7.15 EUR
100+ 6.24 EUR
250+ 6.06 EUR
500+ 5.67 EUR
1000+ 5.25 EUR
Mindestbestellmenge: 6
IXFP12N50P media-3321540.pdf
IXFP12N50P
Hersteller: IXYS
MOSFET HiPERFET Id12 BVdass500
auf Bestellung 517 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.65 EUR
10+ 8.03 EUR
50+ 6.84 EUR
100+ 5.95 EUR
250+ 5.82 EUR
500+ 5.3 EUR
1000+ 4.97 EUR
Mindestbestellmenge: 6
IXFP12N50P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_12n50p_datasheet.pdf.pdf
IXFP12N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.57 EUR
10+ 8.03 EUR
100+ 6.5 EUR
Mindestbestellmenge: 3
IXTA12N50P media-3319745.pdf
IXTA12N50P
Hersteller: IXYS
MOSFET 12.0 Amps 500 V 0.5 Ohm Rds
auf Bestellung 544 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.46 EUR
10+ 7.93 EUR
50+ 7.64 EUR
100+ 6.4 EUR
250+ 6.29 EUR
500+ 5.69 EUR
1000+ 4.94 EUR
Mindestbestellmenge: 6
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
Mindestbestellmenge: 5
IXTP12N50P IXTA12N50P-DTE.pdf
IXTP12N50P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.3 EUR
6+ 11.91 EUR
17+ 4.2 EUR
250+ 2.57 EUR
Mindestbestellmenge: 5
IXTP12N50P DS99322F(IXTA-TI-TP12N50P).pdf
IXTP12N50P
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 73 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9 EUR
50+ 7.13 EUR
Mindestbestellmenge: 3
IXTP12N50PM littelfuse_discrete_mosfets_n-channel_standard_ixtp12n50pm_datasheet.pdf.pdf
Hersteller: IXYS/Littelfuse
N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+6.24 EUR
10+ 5.37 EUR
100+ 4.73 EUR
Mindestbestellmenge: 2
LMDP-512-N50-WD6Q18.0-1-RH
LMDP-512-N50-WD6Q18.0-1-RH
Hersteller: Omnetics
Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+983.06 EUR
NTB12N50T4 ONSMS32473-1.pdf?t.download=true&u=5oefqw
NTB12N50T4
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Part Status: Active
auf Bestellung 3989 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
197+3.67 EUR
Mindestbestellmenge: 197
SIHA12N50E-E3 siha12n50e.pdf
SIHA12N50E-E3
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 519 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.93 EUR
15+ 3.64 EUR
100+ 2.91 EUR
250+ 2.76 EUR
500+ 2.42 EUR
1000+ 1.98 EUR
5000+ 1.92 EUR
Mindestbestellmenge: 14
SIHA12N50E-E3 siha12n50e.pdf
SIHA12N50E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.37 EUR
10+ 3.62 EUR
100+ 2.88 EUR
500+ 2.44 EUR
Mindestbestellmenge: 6
SIHA12N50E-GE3 siha12n50e.pdf
SIHA12N50E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.32 EUR
10+ 3.59 EUR
100+ 2.86 EUR
500+ 2.42 EUR
Mindestbestellmenge: 7
SIHB12N50E-GE3 sihb12n50e.pdf
SIHB12N50E-GE3
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 116 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
10+5.67 EUR
12+ 4.71 EUR
100+ 3.74 EUR
250+ 3.46 EUR
500+ 3.3 EUR
1000+ 2.6 EUR
2000+ 2.54 EUR
Mindestbestellmenge: 10
SIHD12N50E-GE3 sihd12n50e.pdf
SIHD12N50E-GE3
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 5007 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.19 EUR
19+ 2.76 EUR
100+ 2.36 EUR
500+ 2.15 EUR
1000+ 2.11 EUR
Mindestbestellmenge: 13
SIHD12N50E-GE3 sihd12n50e.pdf
SIHD12N50E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 550V 10.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 2993 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.16 EUR
10+ 3.44 EUR
100+ 2.74 EUR
500+ 2.32 EUR
1000+ 1.97 EUR
Mindestbestellmenge: 7
SIHF12N50C-E3 sihp12n5.pdf
SIHF12N50C-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 855 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.14 EUR
50+ 9.62 EUR
100+ 8.25 EUR
500+ 7.33 EUR
Mindestbestellmenge: 3
SIHP12N50C-E3 sihp12n5.pdf
SIHP12N50C-E3
Hersteller: Vishay / Siliconix
MOSFET N-Channel 500V
auf Bestellung 2211 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+10.89 EUR
10+ 9.15 EUR
25+ 8.63 EUR
100+ 7.41 EUR
250+ 6.99 EUR
500+ 6.58 EUR
1000+ 5.28 EUR
Mindestbestellmenge: 5
SIHP12N50E-BE3 sihp12n50e.pdf
SIHP12N50E-BE3
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 500V
auf Bestellung 1641 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
13+4.32 EUR
15+ 3.61 EUR
100+ 2.86 EUR
250+ 2.63 EUR
500+ 2.39 EUR
1000+ 2.35 EUR
2500+ 2.3 EUR
Mindestbestellmenge: 13
SIHP12N50E-BE3 sihp12n50e.pdf
SIHP12N50E-BE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 982 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+4.29 EUR
50+ 3.45 EUR
100+ 2.84 EUR
500+ 2.4 EUR
Mindestbestellmenge: 7
SIHP12N50E-GE3 sihp12n50e.pdf
SIHP12N50E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.16 EUR
37+ 1.94 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 34
SIHP12N50E-GE3 sihp12n50e.pdf
SIHP12N50E-GE3
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
34+2.16 EUR
37+ 1.94 EUR
49+ 1.49 EUR
52+ 1.4 EUR
Mindestbestellmenge: 34
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