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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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AOT12N50 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.4A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced |
auf Bestellung 603 Stücke: Lieferzeit 14-21 Tag (e) |
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AOT12N50 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.4A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.52Ω Mounting: THT Gate charge: 37nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 603 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT12N50 | ALPHA&OMEGA |
Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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C12N50Z4 | Anaren | High Frequency/RF Resistors |
auf Bestellung 1105 Stücke: Lieferzeit 14-28 Tag (e) |
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C12N50Z4 | TTM Technologies, Inc. |
Description: SMD TERM 12W 50 OHM 6GHZ 1206 Packaging: Cut Tape (CT) Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Function: Termination Frequency: 6GHz RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS Secondary Attributes: 12W Part Status: Active |
auf Bestellung 134 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500100JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 NPO 10PF 5% 500V Tolerance: ±5% Features: General Purpose Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.071" (1.80mm) Capacitance: 10 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500101JCT | Cal-Chip Electronics, Inc. |
Description: CAP CER 100PF 500V C0G/NP0 1812 Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.071" (1.80mm) Part Status: Active Capacitance: 100 pF |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500101JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 100PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 100 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500102KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R 1000PF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 1000 pF |
auf Bestellung 985 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500103JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG .01UF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 10000 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500103KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .01UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 10000 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500104KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .1UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Cut Tape (CT) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
auf Bestellung 970 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500104MXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .1UF 20% 500V Tolerance: ±20% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.1 µF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500153KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .015UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.015 µF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500154KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .15UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.15 µF |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500222JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 2200PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 2200 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500223KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .022UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.022 µF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500224KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .22UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.22 µF |
auf Bestellung 700 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500331JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 330PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 330 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500332JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP 1812 COG 3300PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 3300 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500333KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .033UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.033 µF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500334KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .33UF 10% 500V Packaging: Tape & Reel (TR) |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500472JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 4700PF 5% 500V Tolerance: ±5% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 4700 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500472KCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 COG 4700PF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 4700 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500473KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .047UF 10% 500V Tolerance: ±10% Features: High Voltage Packaging: Tape & Reel (TR) Voltage - Rated: 500V Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.118" (3.00mm) Capacitance: 0.047 µF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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CHV1812N500474KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1812 X7R .47UF 10% 500V Packaging: Tape & Reel (TR) |
auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB12N50TM | onsemi / Fairchild | MOSFET 500V N-CH MOSFET |
auf Bestellung 767 Stücke: Lieferzeit 14-28 Tag (e) |
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FDB12N50UTM | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 10A D2PAK Packaging: Bulk Part Status: Active |
auf Bestellung 2040 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF12N50FT | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V |
auf Bestellung 35145 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF12N50NZ | onsemi |
Description: MOSFET N-CH 500V 11.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V |
auf Bestellung 1102 Stücke: Lieferzeit 21-28 Tag (e) |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF12N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.9A Power dissipation: 42W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF12N50T | onsemi |
Description: MOSFET N-CH 500V 11.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V |
auf Bestellung 941 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB12N50TM | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 12.1A Packaging: Bulk Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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HGTH12N50C1D | Harris Corporation |
Description: 12A, 500V, N-CHANNEL IGBT Packaging: Bulk Package / Case: TO-218-3 Isolated Tab, TO-218AC Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 100 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A Supplier Device Package: TO-218 Isolated Gate Charge: 19 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 500 V Current - Collector Pulsed (Icm): 17.5 A Power - Max: 75 W |
auf Bestellung 483 Stücke: Lieferzeit 21-28 Tag (e) |
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HGTH12N50CID | Harris Corporation |
Description: 12A, 500V, N CHANNEL IGBT WITH A Packaging: Bulk Part Status: Active |
auf Bestellung 1374 Stücke: Lieferzeit 21-28 Tag (e) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
auf Bestellung 277 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA12N50P | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 277 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA12N50P | IXYS | MOSFET 500V 12A |
auf Bestellung 623 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFP12N50P | IXYS | MOSFET HiPERFET Id12 BVdass500 |
auf Bestellung 517 Stücke: Lieferzeit 14-28 Tag (e) |
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IXFP12N50P | IXYS |
Description: MOSFET N-CH 500V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
auf Bestellung 450 Stücke: Lieferzeit 21-28 Tag (e) |
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IXTA12N50P | IXYS | MOSFET 12.0 Amps 500 V 0.5 Ohm Rds |
auf Bestellung 544 Stücke: Lieferzeit 14-28 Tag (e) |
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IXTP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP12N50P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: THT Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTP12N50P | IXYS |
Description: MOSFET N-CH 500V 12A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
auf Bestellung 73 Stücke: Lieferzeit 21-28 Tag (e) |
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IXTP12N50PM | IXYS/Littelfuse | N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3 |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
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LMDP-512-N50-WD6Q18.0-1-RH | Omnetics |
Description: CABLE ASSY D-MIC-D 51P 457.2MM Packaging: Bag Contact Finish: Gold Color: Multiple, Ribbon Length: 1.50' (457.20mm) Shielding: Unshielded Number of Positions: 51 Type: D-Type, Micro-D 1st Connector: Plug, Male Pins 2nd Connector: Individual Wire Leads Contact Finish Thickness: 50.0µin (1.27µm) Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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NTB12N50T4 | onsemi |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
auf Bestellung 3989 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHA12N50E-E3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs TO-220 FULLPAK |
auf Bestellung 519 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHA12N50E-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 10.5A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
auf Bestellung 995 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHA12N50E-GE3 | Vishay Siliconix |
Description: N-CHANNEL 500V Packaging: Cut Tape (CT) Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 32W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
auf Bestellung 909 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHB12N50E-GE3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs D2PAK (TO-263) |
auf Bestellung 116 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHD12N50E-GE3 | Vishay / Siliconix | MOSFET 500V Vds 30V Vgs DPAK (TO-252) |
auf Bestellung 5007 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHD12N50E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 550V 10.5A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TA) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 550 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
auf Bestellung 2993 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHF12N50C-E3 | Vishay Siliconix |
Description: MOSFET N-CH 500V 12A TO220 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Full Pack Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V |
auf Bestellung 855 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHP12N50C-E3 | Vishay / Siliconix | MOSFET N-Channel 500V |
auf Bestellung 2211 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP12N50E-BE3 | Vishay / Siliconix | MOSFET N-CHANNEL 500V |
auf Bestellung 1641 Stücke: Lieferzeit 14-28 Tag (e) |
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SIHP12N50E-BE3 | Vishay Siliconix |
Description: N-CHANNEL 500V Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V |
auf Bestellung 982 Stücke: Lieferzeit 21-28 Tag (e) |
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SIHP12N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 121A Power dissipation: 114W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
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SIHP12N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 6.6A Pulsed drain current: 121A Power dissipation: 114W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 50nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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AOT12N50 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
auf Bestellung 603 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.7 EUR |
50+ | 1.46 EUR |
59+ | 1.22 EUR |
62+ | 1.16 EUR |
500+ | 1.12 EUR |
AOT12N50 |
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.4A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.4A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.52Ω
Mounting: THT
Gate charge: 37nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 603 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
43+ | 1.7 EUR |
50+ | 1.46 EUR |
59+ | 1.22 EUR |
62+ | 1.16 EUR |
500+ | 1.12 EUR |
AOT12N50 |
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 520mOhm; 12A; 250W; -55°C ~ 150°C; AOT12N50 TAOT12n50
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.82 EUR |
C12N50Z4 |
Hersteller: Anaren
High Frequency/RF Resistors
High Frequency/RF Resistors
auf Bestellung 1105 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.61 EUR |
10+ | 7.7 EUR |
25+ | 6.92 EUR |
50+ | 6.68 EUR |
100+ | 5.75 EUR |
250+ | 4.99 EUR |
500+ | 4.5 EUR |
C12N50Z4 |
Hersteller: TTM Technologies, Inc.
Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Part Status: Active
Description: SMD TERM 12W 50 OHM 6GHZ 1206
Packaging: Cut Tape (CT)
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Function: Termination
Frequency: 6GHz
RF Type: AMPS, Cellular, DCS, GSM, PCS, PHS, UMTS
Secondary Attributes: 12W
Part Status: Active
auf Bestellung 134 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 8.63 EUR |
10+ | 7.7 EUR |
25+ | 6.93 EUR |
100+ | 6.31 EUR |
CHV1812N500100JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
Description: HVCAP1812 NPO 10PF 5% 500V
Tolerance: ±5%
Features: General Purpose
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.16 EUR |
CHV1812N500101JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: CAP CER 100PF 500V C0G/NP0 1812
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Part Status: Active
Capacitance: 100 pF
Description: CAP CER 100PF 500V C0G/NP0 1812
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.071" (1.80mm)
Part Status: Active
Capacitance: 100 pF
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.08 EUR |
2000+ | 1.03 EUR |
CHV1812N500101JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 100PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 100 pF
Description: HVCAP1812 COG 100PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 100 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.31 EUR |
CHV1812N500102KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R 1000PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
Description: HVCAP1812 X7R 1000PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 1000 pF
auf Bestellung 985 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.96 EUR |
12+ | 2.21 EUR |
50+ | 2.02 EUR |
100+ | 1.65 EUR |
500+ | 1.32 EUR |
CHV1812N500103JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG .01UF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
Description: HVCAP1812 COG .01UF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.99 EUR |
CHV1812N500103KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
Description: HVCAP1812 X7R .01UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 10000 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.72 EUR |
CHV1812N500104KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP1812 X7R .1UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Cut Tape (CT)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.66 EUR |
23+ | 1.16 EUR |
50+ | 0.98 EUR |
100+ | 0.8 EUR |
500+ | 0.66 EUR |
CHV1812N500104MXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
Description: HVCAP1812 X7R .1UF 20% 500V
Tolerance: ±20%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.1 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.65 EUR |
CHV1812N500153KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
Description: HVCAP1812 X7R .015UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.015 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.72 EUR |
CHV1812N500154KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
Description: HVCAP1812 X7R .15UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.15 µF
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 1.05 EUR |
CHV1812N500222JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
Description: HVCAP1812 COG 2200PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 2200 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.9 EUR |
CHV1812N500223KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
Description: HVCAP1812 X7R .022UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.022 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.05 EUR |
CHV1812N500224KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
Description: HVCAP1812 X7R .22UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.22 µF
auf Bestellung 700 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
700+ | 0.94 EUR |
CHV1812N500331JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
Description: HVCAP1812 COG 330PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 330 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.84 EUR |
CHV1812N500332JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP 1812 COG 3300PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
Description: HVCAP 1812 COG 3300PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 3300 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.09 EUR |
CHV1812N500333KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .033UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.033 µF
Description: HVCAP1812 X7R .033UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.033 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.16 EUR |
CHV1812N500334KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Tape & Reel (TR)
Description: HVCAP1812 X7R .33UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 1.15 EUR |
CHV1812N500472JCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
Description: HVCAP1812 COG 4700PF 5% 500V
Tolerance: ±5%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.02 EUR |
CHV1812N500472KCT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 COG 4700PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
Description: HVCAP1812 COG 4700PF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 4700 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.16 EUR |
CHV1812N500473KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
Description: HVCAP1812 X7R .047UF 10% 500V
Tolerance: ±10%
Features: High Voltage
Packaging: Tape & Reel (TR)
Voltage - Rated: 500V
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.126" W (4.60mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.118" (3.00mm)
Capacitance: 0.047 µF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.84 EUR |
CHV1812N500474KXT |
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
Description: HVCAP1812 X7R .47UF 10% 500V
Packaging: Tape & Reel (TR)
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 0.73 EUR |
FDB12N50TM |
Hersteller: onsemi / Fairchild
MOSFET 500V N-CH MOSFET
MOSFET 500V N-CH MOSFET
auf Bestellung 767 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.38 EUR |
12+ | 4.47 EUR |
100+ | 3.56 EUR |
250+ | 3.28 EUR |
500+ | 3.12 EUR |
800+ | 2.56 EUR |
2400+ | 2.42 EUR |
FDB12N50UTM |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Bulk
Part Status: Active
Description: MOSFET N-CH 500V 10A D2PAK
Packaging: Bulk
Part Status: Active
auf Bestellung 2040 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
333+ | 2.16 EUR |
FDPF12N50FT |
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
auf Bestellung 35145 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
286+ | 2.52 EUR |
FDPF12N50NZ |
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 5.75A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1235 pF @ 25 V
auf Bestellung 1102 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.63 EUR |
50+ | 3.72 EUR |
100+ | 3.06 EUR |
500+ | 2.59 EUR |
1000+ | 2.2 EUR |
FDPF12N50T |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.43 EUR |
33+ | 2.19 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
FDPF12N50T |
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.9A; 42W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.9A
Power dissipation: 42W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 2.43 EUR |
33+ | 2.19 EUR |
43+ | 1.67 EUR |
46+ | 1.57 EUR |
FDPF12N50T |
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V
Description: MOSFET N-CH 500V 11.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 25 V
auf Bestellung 941 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.32 EUR |
50+ | 5.08 EUR |
100+ | 4.18 EUR |
500+ | 3.54 EUR |
FQB12N50TM |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 12.1A
Packaging: Bulk
Part Status: Active
Description: MOSFET N-CH 500V 12.1A
Packaging: Bulk
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
258+ | 2.79 EUR |
HGTH12N50C1D |
Hersteller: Harris Corporation
Description: 12A, 500V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Supplier Device Package: TO-218 Isolated
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 17.5 A
Power - Max: 75 W
Description: 12A, 500V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-218-3 Isolated Tab, TO-218AC
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 100 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 20V, 17.5A
Supplier Device Package: TO-218 Isolated
Gate Charge: 19 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector Pulsed (Icm): 17.5 A
Power - Max: 75 W
auf Bestellung 483 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
121+ | 5.98 EUR |
HGTH12N50CID |
Hersteller: Harris Corporation
Description: 12A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
Description: 12A, 500V, N CHANNEL IGBT WITH A
Packaging: Bulk
Part Status: Active
auf Bestellung 1374 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
121+ | 5.98 EUR |
IXFA12N50P |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 277 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.68 EUR |
18+ | 4.2 EUR |
22+ | 3.33 EUR |
23+ | 3.16 EUR |
IXFA12N50P |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 277 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.68 EUR |
18+ | 4.2 EUR |
22+ | 3.33 EUR |
23+ | 3.16 EUR |
IXFA12N50P |
Hersteller: IXYS
MOSFET 500V 12A
MOSFET 500V 12A
auf Bestellung 623 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 10.01 EUR |
10+ | 8.42 EUR |
50+ | 7.15 EUR |
100+ | 6.24 EUR |
250+ | 6.06 EUR |
500+ | 5.67 EUR |
1000+ | 5.25 EUR |
IXFP12N50P |
Hersteller: IXYS
MOSFET HiPERFET Id12 BVdass500
MOSFET HiPERFET Id12 BVdass500
auf Bestellung 517 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 9.65 EUR |
10+ | 8.03 EUR |
50+ | 6.84 EUR |
100+ | 5.95 EUR |
250+ | 5.82 EUR |
500+ | 5.3 EUR |
1000+ | 4.97 EUR |
IXFP12N50P |
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.57 EUR |
10+ | 8.03 EUR |
100+ | 6.5 EUR |
IXTA12N50P |
Hersteller: IXYS
MOSFET 12.0 Amps 500 V 0.5 Ohm Rds
MOSFET 12.0 Amps 500 V 0.5 Ohm Rds
auf Bestellung 544 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 9.46 EUR |
10+ | 7.93 EUR |
50+ | 7.64 EUR |
100+ | 6.4 EUR |
250+ | 6.29 EUR |
500+ | 5.69 EUR |
1000+ | 4.94 EUR |
IXTP12N50P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
IXTP12N50P |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO220AB
Type of transistor: N-MOSFET
Technology: Polar™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 29nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 300ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
6+ | 11.91 EUR |
17+ | 4.2 EUR |
250+ | 2.57 EUR |
IXTP12N50P |
Hersteller: IXYS
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 73 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9 EUR |
50+ | 7.13 EUR |
IXTP12N50PM |
Hersteller: IXYS/Littelfuse
N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
N-канальний ПТ; Udss, В = 500; Id = 6 A; Ciss, пФ @ Uds, В = 1830; Qg, нКл = 29; Rds = 0,5 Ом; Ugs(th) = 5,5 В; Р, Вт = 50 Вт; Тексп, °C = -55...+150; Тип монт. = вивідний; TO-220-3
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 6.24 EUR |
10+ | 5.37 EUR |
100+ | 4.73 EUR |
LMDP-512-N50-WD6Q18.0-1-RH |
Hersteller: Omnetics
Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
Description: CABLE ASSY D-MIC-D 51P 457.2MM
Packaging: Bag
Contact Finish: Gold
Color: Multiple, Ribbon
Length: 1.50' (457.20mm)
Shielding: Unshielded
Number of Positions: 51
Type: D-Type, Micro-D
1st Connector: Plug, Male Pins
2nd Connector: Individual Wire Leads
Contact Finish Thickness: 50.0µin (1.27µm)
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 983.06 EUR |
NTB12N50T4 |
auf Bestellung 3989 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
197+ | 3.67 EUR |
SIHA12N50E-E3 |
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
MOSFET 500V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 519 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.93 EUR |
15+ | 3.64 EUR |
100+ | 2.91 EUR |
250+ | 2.76 EUR |
500+ | 2.42 EUR |
1000+ | 1.98 EUR |
5000+ | 1.92 EUR |
SIHA12N50E-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 10.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: MOSFET N-CH 500V 10.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 995 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.37 EUR |
10+ | 3.62 EUR |
100+ | 2.88 EUR |
500+ | 2.44 EUR |
SIHA12N50E-GE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 909 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.32 EUR |
10+ | 3.59 EUR |
100+ | 2.86 EUR |
500+ | 2.42 EUR |
SIHB12N50E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
MOSFET 500V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 116 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.67 EUR |
12+ | 4.71 EUR |
100+ | 3.74 EUR |
250+ | 3.46 EUR |
500+ | 3.3 EUR |
1000+ | 2.6 EUR |
2000+ | 2.54 EUR |
SIHD12N50E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
MOSFET 500V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 5007 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.19 EUR |
19+ | 2.76 EUR |
100+ | 2.36 EUR |
500+ | 2.15 EUR |
1000+ | 2.11 EUR |
SIHD12N50E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 550V 10.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: MOSFET N-CH 550V 10.5A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 550 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 2993 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.16 EUR |
10+ | 3.44 EUR |
100+ | 2.74 EUR |
500+ | 2.32 EUR |
1000+ | 1.97 EUR |
SIHF12N50C-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
Description: MOSFET N-CH 500V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 555mOhm @ 4A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1375 pF @ 25 V
auf Bestellung 855 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 12.14 EUR |
50+ | 9.62 EUR |
100+ | 8.25 EUR |
500+ | 7.33 EUR |
SIHP12N50C-E3 |
Hersteller: Vishay / Siliconix
MOSFET N-Channel 500V
MOSFET N-Channel 500V
auf Bestellung 2211 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 10.89 EUR |
10+ | 9.15 EUR |
25+ | 8.63 EUR |
100+ | 7.41 EUR |
250+ | 6.99 EUR |
500+ | 6.58 EUR |
1000+ | 5.28 EUR |
SIHP12N50E-BE3 |
Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 500V
MOSFET N-CHANNEL 500V
auf Bestellung 1641 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.32 EUR |
15+ | 3.61 EUR |
100+ | 2.86 EUR |
250+ | 2.63 EUR |
500+ | 2.39 EUR |
1000+ | 2.35 EUR |
2500+ | 2.3 EUR |
SIHP12N50E-BE3 |
Hersteller: Vishay Siliconix
Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
Description: N-CHANNEL 500V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 886 pF @ 100 V
auf Bestellung 982 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.29 EUR |
50+ | 3.45 EUR |
100+ | 2.84 EUR |
500+ | 2.4 EUR |
SIHP12N50E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
37+ | 1.94 EUR |
49+ | 1.49 EUR |
52+ | 1.4 EUR |
SIHP12N50E-GE3 |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 121A; 114W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6.6A
Pulsed drain current: 121A
Power dissipation: 114W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 50nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 2.16 EUR |
37+ | 1.94 EUR |
49+ | 1.49 EUR |
52+ | 1.4 EUR |
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