Suchergebnisse für "2sc3070" : 5
Art der Ansicht :
Mindestbestellmenge: 1402
Mindestbestellmenge: 1402
Mindestbestellmenge: 2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2SC3070-AE | ONSEMI |
Description: ONSEMI - 2SC3070-AE - 2SC3070-AE, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3070-AE | Sanyo |
Description: 2SC3070 - NPN EPITAXIAL PLANAR S Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
auf Bestellung 32000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3070-AE | onsemi |
Description: NPN SILICON TRANSISTOR Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V Frequency - Transition: 250MHz Supplier Device Package: 3-MP Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 1 W |
auf Bestellung 51000 Stücke: Lieferzeit 21-28 Tag (e) |
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2SC3070 |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTE2503 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 25V; 0.7A; 0.6W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 0.7A Power dissipation: 0.6W Case: TO92 Current gain: 600...3200 Mounting: THT Frequency: 270MHz |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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2SC3070-AE |
Hersteller: ONSEMI
Description: ONSEMI - 2SC3070-AE - 2SC3070-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 2SC3070-AE - 2SC3070-AE, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)2SC3070-AE |
Hersteller: Sanyo
Description: 2SC3070 - NPN EPITAXIAL PLANAR S
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
Description: 2SC3070 - NPN EPITAXIAL PLANAR S
Packaging: Bulk
Part Status: Active
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.5 EUR |
2SC3070-AE |
Hersteller: onsemi
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
Description: NPN SILICON TRANSISTOR
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 500mV @ 10mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: 3-MP
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 1 W
auf Bestellung 51000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1402+ | 0.5 EUR |
NTE2503 |
Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 0.7A; 0.6W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.7A
Power dissipation: 0.6W
Case: TO92
Current gain: 600...3200
Mounting: THT
Frequency: 270MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 25V; 0.7A; 0.6W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.7A
Power dissipation: 0.6W
Case: TO92
Current gain: 600...3200
Mounting: THT
Frequency: 270MHz
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 35.75 EUR |