Suchergebnisse für "30N450HV" : 8
Art der Ansicht :
Mindestbestellmenge: 2
Mindestbestellmenge: 2
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1545ns Features of semiconductor devices: high voltage |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IXYH30N450HV | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO247HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: THT Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1545ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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IXYH30N450HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1542ns Features of semiconductor devices: high voltage |
Produkt ist nicht verfügbar |
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IXYT30N450HV | Littelfuse | Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247 |
Produkt ist nicht verfügbar |
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IXYT30N450HV | IXYS |
Category: SMD IGBT transistors Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV Type of transistor: IGBT Technology: XPT™ Collector-emitter voltage: 4.5kV Collector current: 30A Power dissipation: 430W Case: TO268HV Gate-emitter voltage: ±20V Pulsed collector current: 200A Mounting: SMD Gate charge: 88nC Kind of package: tube Turn-on time: 632ns Turn-off time: 1542ns Features of semiconductor devices: high voltage Anzahl je Verpackung: 300 Stücke |
Produkt ist nicht verfügbar |
IXYH30N450HV |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 43.46 EUR |
IXYH30N450HV |
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO247HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO247HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: THT
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1545ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 43.46 EUR |
IXYH30N450HV |
Hersteller: Littelfuse
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYT30N450HV |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Produkt ist nicht verfügbar
IXYT30N450HV |
Hersteller: Littelfuse
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Trans IGBT Chip N-CH 900V 165A 830000mW 3-Pin(3+Tab) TO-247
Produkt ist nicht verfügbar
IXYT30N450HV |
Hersteller: IXYS
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 300 Stücke
Category: SMD IGBT transistors
Description: Transistor: IGBT; XPT™; 4.5kV; 30A; 430W; TO268HV
Type of transistor: IGBT
Technology: XPT™
Collector-emitter voltage: 4.5kV
Collector current: 30A
Power dissipation: 430W
Case: TO268HV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Mounting: SMD
Gate charge: 88nC
Kind of package: tube
Turn-on time: 632ns
Turn-off time: 1542ns
Features of semiconductor devices: high voltage
Anzahl je Verpackung: 300 Stücke
Produkt ist nicht verfügbar