Suchergebnisse für "30n06" : > 60

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30N06 30N06 UMW UMW%2030N06.pdf Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
auf Bestellung 2072 Stücke:
Lieferzeit 21-28 Tag (e)
16+1.64 EUR
19+ 1.41 EUR
100+ 0.98 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 16
BXT330N06D BXT330N06D BRIDGELUX BXT330N06D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDMS030N06B FDMS030N06B onsemi / Fairchild FDMS030N06B_D-2312391.pdf MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET
auf Bestellung 12911 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.66 EUR
10+ 6.06 EUR
100+ 5.49 EUR
250+ 5.46 EUR
500+ 4.99 EUR
1000+ 4.26 EUR
3000+ 3.98 EUR
Mindestbestellmenge: 8
FDMS030N06B Fairchild/ON Semiconductor fdms030n06b-d.pdf N-канальний ПТ; Udss, В = 60; Id = 100; Ciss, пФ @ Uds, В = 7560 @ 30; Qg, нКл = 75 @ 10 В; Rds = 3 мОм; Ugs(th) = 4,5; Р, Вт = 104; Тексп, °C = -55...+150; Тип монт. = smd; PowerTDFN-8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
1+11.3 EUR
10+ 9.73 EUR
100+ 8.56 EUR
FDMS030N06B FDMS030N06B onsemi fdms030n06b-d.pdf Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+3.97 EUR
Mindestbestellmenge: 3000
FDMS030N06B FDMS030N06B onsemi fdms030n06b-d.pdf Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 5165 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.16 EUR
10+ 6.85 EUR
100+ 5.54 EUR
500+ 4.93 EUR
1000+ 4.22 EUR
Mindestbestellmenge: 4
FDP030N06 FDP030N06 onsemi / Fairchild FDP030N06_D-2312690.pdf MOSFET NCH 60V 3.0Mohm
auf Bestellung 998 Stücke:
Lieferzeit 14-28 Tag (e)
5+11.15 EUR
10+ 9.36 EUR
25+ 8.81 EUR
100+ 7.57 EUR
250+ 7.12 EUR
500+ 6.73 EUR
1000+ 5.98 EUR
Mindestbestellmenge: 5
FDP030N06 FDP030N06 onsemi fdp030n06-d.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
auf Bestellung 867 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.08 EUR
50+ 8.78 EUR
100+ 7.52 EUR
500+ 6.69 EUR
Mindestbestellmenge: 3
FDP030N06B Fairchild Semiconductor Description: 1-ELEMENT, N-CHANNEL, MOS FET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
185+3.89 EUR
Mindestbestellmenge: 185
FDP030N06B-F102 FDP030N06B-F102 onsemi / Fairchild FDP030N06B_F102_D-2312772.pdf MOSFET N-Channel PowerTrench MOSFET 60V, 195A, 3.1mO
auf Bestellung 1266 Stücke:
Lieferzeit 14-28 Tag (e)
9+5.8 EUR
12+ 4.65 EUR
100+ 3.82 EUR
500+ 3.15 EUR
800+ 2.53 EUR
Mindestbestellmenge: 9
FDP030N06B-F102 FDP030N06B-F102 onsemi fdp030n06b-f102-d.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
auf Bestellung 1495 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.77 EUR
50+ 4.63 EUR
100+ 3.81 EUR
500+ 3.22 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 5
FQD30N06TM FQD30N06TM onsemi / Fairchild FQD30N06_D-2313675.pdf MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
auf Bestellung 13852 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.65 EUR
24+ 2.19 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
2500+ 1.11 EUR
5000+ 1.05 EUR
Mindestbestellmenge: 20
FQD30N06TM FQD30N06TM onsemi fqd30n06-d.pdf Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 4311 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.65 EUR
12+ 2.18 EUR
100+ 1.69 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 10
FQD30N06TM FQD30N06TM onsemi fqd30n06-d.pdf Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.1 EUR
Mindestbestellmenge: 2500
FQP30N06 FQP30N06 onsemi ONSM-S-A0003585260-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 8358 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.67 EUR
50+ 2.95 EUR
100+ 2.34 EUR
500+ 1.98 EUR
1000+ 1.61 EUR
2000+ 1.52 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 8
FQP30N06L ON-Semicoductor fqp30n06l-d.pdf Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB FQP30N06L TFQP30n06l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.91 EUR
Mindestbestellmenge: 20
FQPF30N06 FQPF30N06 Fairchild Semiconductor FAIRS12505-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 82723 Stücke:
Lieferzeit 21-28 Tag (e)
523+1.37 EUR
Mindestbestellmenge: 523
G030N06M G030N06M Goford Semiconductor GOFORD-G030N06M.pdf Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
800+2.54 EUR
Mindestbestellmenge: 800
G030N06T G030N06T Goford Semiconductor GOFORD-G030N06T.pdf Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.85 EUR
Mindestbestellmenge: 1000
G030N06T G030N06T Goford Semiconductor GOFORD-G030N06T.pdf Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 61 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.1 EUR
10+ 4.22 EUR
Mindestbestellmenge: 6
G130N06M G130N06M Goford Semiconductor GOFORD-G130N06M.pdf Description: MOSFET N-CH 60V 90A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
1600+0.82 EUR
Mindestbestellmenge: 1600
G130N06M G130N06M Goford Semiconductor GOFORD-G130N06M.pdf Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
auf Bestellung 783 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.16 EUR
15+ 1.77 EUR
100+ 1.37 EUR
Mindestbestellmenge: 13
G130N06S G130N06S Goford Semiconductor GOFORD-G130N06S.pdf Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
auf Bestellung 3990 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.4 EUR
22+ 1.21 EUR
100+ 0.83 EUR
500+ 0.7 EUR
1000+ 0.59 EUR
2000+ 0.53 EUR
Mindestbestellmenge: 19
G130N06S G130N06S Goford Semiconductor GOFORD-G130N06S.pdf Description: MOSFET N-CH 60V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.5 EUR
Mindestbestellmenge: 4000
G130N06S2 G130N06S2 Goford Semiconductor GOFORD-G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.89 EUR
Mindestbestellmenge: 4000
G130N06S2 G130N06S2 Goford Semiconductor GOFORD-G130N06S2.pdf Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3750 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.21 EUR
15+ 1.81 EUR
100+ 1.41 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
2000+ 0.91 EUR
Mindestbestellmenge: 12
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 Infineon Technologies Infineon_IAUZ30N06S5L140_DataSheet_v01_00_EN-1863858.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 24249 Stücke:
Lieferzeit 14-28 Tag (e)
32+1.64 EUR
38+ 1.37 EUR
100+ 1.12 EUR
500+ 0.99 EUR
1000+ 0.84 EUR
2500+ 0.82 EUR
5000+ 0.79 EUR
Mindestbestellmenge: 32
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 Infineon Technologies Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6 Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.79 EUR
10000+ 0.75 EUR
Mindestbestellmenge: 5000
IAUZ30N06S5L140ATMA1 IAUZ30N06S5L140ATMA1 Infineon Technologies Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6 Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
auf Bestellung 24415 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
16+ 1.64 EUR
100+ 1.28 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
IPD30N06S215ATMA2 IPD30N06S215ATMA2 Infineon Technologies Infineon_IPD30N06S2_15_DS_v01_00_en-1226988.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 4465 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.68 EUR
23+ 2.31 EUR
100+ 1.94 EUR
500+ 1.77 EUR
1000+ 1.6 EUR
2500+ 1.56 EUR
5000+ 1.52 EUR
Mindestbestellmenge: 20
IPD30N06S215ATMA2 IPD30N06S215ATMA2 Infineon Technologies Infineon-IPD30N06S2_15-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e70a5e0a Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 6575 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.85 EUR
10+ 3.15 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
IPD30N06S215ATMA2 IPD30N06S215ATMA2 Infineon Technologies Infineon-IPD30N06S2_15-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e70a5e0a Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.59 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 2500
IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon_IPD30N06S2_23_DS_v01_00_en-1731671.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 14479 Stücke:
Lieferzeit 14-28 Tag (e)
18+3.04 EUR
21+ 2.51 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.35 EUR
2500+ 1.27 EUR
5000+ 1.21 EUR
Mindestbestellmenge: 18
IPD30N06S223ATMA2 IPD30N06S223ATMA2 Infineon Technologies Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)
9+3.07 EUR
11+ 2.51 EUR
100+ 1.95 EUR
500+ 1.65 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 9
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 Infineon Technologies Infineon_IPD30N06S2L_13_DS_v01_00_en-1731848.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 2427 Stücke:
Lieferzeit 14-28 Tag (e)
16+3.46 EUR
18+ 2.91 EUR
100+ 2.33 EUR
250+ 2.28 EUR
500+ 1.98 EUR
1000+ 1.71 EUR
2500+ 1.64 EUR
Mindestbestellmenge: 16
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 Infineon Technologies Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 17954 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.61 EUR
10+ 3.01 EUR
100+ 2.39 EUR
500+ 2.02 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 8
IPD30N06S2L13ATMA4 IPD30N06S2L13ATMA4 Infineon Technologies Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.63 EUR
5000+ 1.57 EUR
12500+ 1.52 EUR
Mindestbestellmenge: 2500
IPD30N06S2L23ATMA1 IPD30N06S2L23ATMA1 Infineon Technologies IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 2010 Stücke:
Lieferzeit 21-28 Tag (e)
650+1.1 EUR
Mindestbestellmenge: 650
IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies Infineon_IPD30N06S2L_23_DS_v01_00_en-1226928.pdf MOSFET MOSFET_)40V 60V)
auf Bestellung 65966 Stücke:
Lieferzeit 14-28 Tag (e)
27+1.98 EUR
32+ 1.67 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1.2 EUR
2500+ 1.18 EUR
Mindestbestellmenge: 27
IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 14117 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.24 EUR
15+ 1.83 EUR
100+ 1.42 EUR
500+ 1.21 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 12
IPD30N06S2L23ATMA3 IPD30N06S2L23ATMA3 Infineon Technologies Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69 Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.19 EUR
Mindestbestellmenge: 2500
IPD30N06S4L23ATMA2 IPD30N06S4L23ATMA2 Infineon Technologies Infineon_IPD30N06S4L_23_DS_v01_00_en-1731656.pdf MOSFET MOSFET
auf Bestellung 9329 Stücke:
Lieferzeit 14-28 Tag (e)
27+1.96 EUR
33+ 1.61 EUR
100+ 1.35 EUR
500+ 1.23 EUR
1000+ 1.1 EUR
2500+ 1.06 EUR
5000+ 1.02 EUR
Mindestbestellmenge: 27
IPD30N06S4L23ATMA2 IPD30N06S4L23ATMA2 Infineon Technologies Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5 Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1110 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 Infineon Technologies Infineon_IPP030N06NF2S_DataSheet_v02_02_EN-3043222.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 1153 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.67 EUR
18+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
2000+ 1.53 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 15
IPP030N06NF2SAKMA1 IPP030N06NF2SAKMA1 Infineon Technologies Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83 Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
auf Bestellung 862 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.67 EUR
50+ 2.94 EUR
100+ 2.33 EUR
500+ 1.98 EUR
Mindestbestellmenge: 8
IPP230N06L3G IPP230N06L3G Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 9620 Stücke:
Lieferzeit 21-28 Tag (e)
693+1.03 EUR
Mindestbestellmenge: 693
IPP230N06L3GXKSA1 IPP230N06L3GXKSA1 Infineon Technologies INFNS19526-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
831+0.86 EUR
Mindestbestellmenge: 831
IQE030N06NM5ATMA1 IQE030N06NM5ATMA1 Infineon Technologies Infineon_IQE030N06NM5_DataSheet_v02_00_EN-2942432.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 6843 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.86 EUR
10+ 5.72 EUR
100+ 4.55 EUR
250+ 4.34 EUR
500+ 3.85 EUR
1000+ 3.12 EUR
5000+ 2.99 EUR
Mindestbestellmenge: 8
IQE030N06NM5ATMA1 IQE030N06NM5ATMA1 Infineon Technologies Infineon-IQE030N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8257277f7a Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+2.96 EUR
Mindestbestellmenge: 5000
IQE030N06NM5ATMA1 IQE030N06NM5ATMA1 Infineon Technologies Infineon-IQE030N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8257277f7a Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 7358 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.81 EUR
10+ 5.67 EUR
100+ 4.51 EUR
500+ 3.82 EUR
1000+ 3.24 EUR
2000+ 3.08 EUR
Mindestbestellmenge: 4
IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon_IQE030N06NM5CG_DataSheet_v02_00_EN-2942450.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 4906 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.86 EUR
10+ 5.72 EUR
100+ 4.55 EUR
250+ 4.34 EUR
500+ 3.85 EUR
1000+ 3.12 EUR
5000+ 2.99 EUR
Mindestbestellmenge: 8
IQE030N06NM5CGATMA1 IQE030N06NM5CGATMA1 Infineon Technologies Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 4960 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.81 EUR
10+ 5.67 EUR
100+ 4.51 EUR
500+ 3.82 EUR
1000+ 3.24 EUR
2000+ 3.08 EUR
Mindestbestellmenge: 4
IQE030N06NM5CGSCATMA1 IQE030N06NM5CGSCATMA1 Infineon Technologies Infineon_IQE030N06NM5CGSC_DataSheet_v02_00_EN-3073605.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 5820 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.79 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.63 EUR
250+ 4.37 EUR
500+ 4.11 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 8
IQE030N06NM5SCATMA1 IQE030N06NM5SCATMA1 Infineon Technologies Infineon_IQE030N06NM5SC_DataSheet_v02_00_EN-3073870.pdf MOSFET TRENCH 40<-<100V
auf Bestellung 3620 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.79 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.63 EUR
250+ 4.37 EUR
500+ 4.11 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 8
MCAC30N06Y-TP Micro Commercial Components (MCC) MCAC30N06Y(DFN5060).pdf MOSFET 60V N-Ch 20Vgs 130A 30W
auf Bestellung 4834 Stücke:
Lieferzeit 14-28 Tag (e)
29+1.81 EUR
33+ 1.61 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.71 EUR
2500+ 0.7 EUR
5000+ 0.66 EUR
Mindestbestellmenge: 29
MTA30N06E MTA30N06E Motorola FSCLS08796-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5283 Stücke:
Lieferzeit 21-28 Tag (e)
148+4.87 EUR
Mindestbestellmenge: 148
MTAJ30N06ELFK MTAJ30N06ELFK onsemi Description: NFET T0220FP JPN
Packaging: Bulk
Part Status: Active
auf Bestellung 396 Stücke:
Lieferzeit 21-28 Tag (e)
163+4.44 EUR
Mindestbestellmenge: 163
NP30N06QDK-E1-AY NP30N06QDK-E1-AY Renesas Electronics Corporation np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471 Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4955 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.58 EUR
10+ 5.46 EUR
100+ 4.35 EUR
500+ 3.68 EUR
1000+ 3.12 EUR
Mindestbestellmenge: 4
NP30N06QDK-E1-AY NP30N06QDK-E1-AY Renesas Electronics Corporation np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471 Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.96 EUR
Mindestbestellmenge: 2500
NP30N06QDK-E1-AY NP30N06QDK-E1-AY Renesas Electronics REN_r07ds1332ej0200_pomosfet_DST_20180524-3075889.pdf MOSFET POWER TR2 AUTOMOTIVE MOS DUAL N-CH
auf Bestellung 2500 Stücke:
Lieferzeit 203-217 Tag (e)
8+6.63 EUR
10+ 5.51 EUR
100+ 4.37 EUR
250+ 4.21 EUR
500+ 3.69 EUR
1000+ 3.15 EUR
2500+ 2.96 EUR
Mindestbestellmenge: 8
30N06 UMW%2030N06.pdf
30N06
Hersteller: UMW
Description: 60V 25A 30MR@10V,15A 34.7W 2.5V@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1562 pF @ 25 V
auf Bestellung 2072 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+1.64 EUR
19+ 1.41 EUR
100+ 0.98 EUR
500+ 0.81 EUR
1000+ 0.69 EUR
Mindestbestellmenge: 16
BXT330N06D BXT330N06D.pdf
BXT330N06D
Hersteller: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14A
Pulsed drain current: 80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 24.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
FDMS030N06B FDMS030N06B_D-2312391.pdf
FDMS030N06B
Hersteller: onsemi / Fairchild
MOSFET NCh 80V 120A 5.3mOhm PowerTrench MOSFET
auf Bestellung 12911 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.66 EUR
10+ 6.06 EUR
100+ 5.49 EUR
250+ 5.46 EUR
500+ 4.99 EUR
1000+ 4.26 EUR
3000+ 3.98 EUR
Mindestbestellmenge: 8
FDMS030N06B fdms030n06b-d.pdf
Hersteller: Fairchild/ON Semiconductor
N-канальний ПТ; Udss, В = 60; Id = 100; Ciss, пФ @ Uds, В = 7560 @ 30; Qg, нКл = 75 @ 10 В; Rds = 3 мОм; Ugs(th) = 4,5; Р, Вт = 104; Тексп, °C = -55...+150; Тип монт. = smd; PowerTDFN-8
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+11.3 EUR
10+ 9.73 EUR
100+ 8.56 EUR
FDMS030N06B fdms030n06b-d.pdf
FDMS030N06B
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+3.97 EUR
Mindestbestellmenge: 3000
FDMS030N06B fdms030n06b-d.pdf
FDMS030N06B
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 5165 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.16 EUR
10+ 6.85 EUR
100+ 5.54 EUR
500+ 4.93 EUR
1000+ 4.22 EUR
Mindestbestellmenge: 4
FDP030N06 FDP030N06_D-2312690.pdf
FDP030N06
Hersteller: onsemi / Fairchild
MOSFET NCH 60V 3.0Mohm
auf Bestellung 998 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+11.15 EUR
10+ 9.36 EUR
25+ 8.81 EUR
100+ 7.57 EUR
250+ 7.12 EUR
500+ 6.73 EUR
1000+ 5.98 EUR
Mindestbestellmenge: 5
FDP030N06 fdp030n06-d.pdf
FDP030N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9815 pF @ 25 V
auf Bestellung 867 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.08 EUR
50+ 8.78 EUR
100+ 7.52 EUR
500+ 6.69 EUR
Mindestbestellmenge: 3
FDP030N06B
Hersteller: Fairchild Semiconductor
Description: 1-ELEMENT, N-CHANNEL, MOS FET
Packaging: Bulk
Part Status: Active
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
185+3.89 EUR
Mindestbestellmenge: 185
FDP030N06B-F102 FDP030N06B_F102_D-2312772.pdf
FDP030N06B-F102
Hersteller: onsemi / Fairchild
MOSFET N-Channel PowerTrench MOSFET 60V, 195A, 3.1mO
auf Bestellung 1266 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+5.8 EUR
12+ 4.65 EUR
100+ 3.82 EUR
500+ 3.15 EUR
800+ 2.53 EUR
Mindestbestellmenge: 9
FDP030N06B-F102 fdp030n06b-f102-d.pdf
FDP030N06B-F102
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
auf Bestellung 1495 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.77 EUR
50+ 4.63 EUR
100+ 3.81 EUR
500+ 3.22 EUR
1000+ 2.73 EUR
Mindestbestellmenge: 5
FQD30N06TM FQD30N06_D-2313675.pdf
FQD30N06TM
Hersteller: onsemi / Fairchild
MOSFET 60V 22.7A N-CHANNEL QFET MOSFET
auf Bestellung 13852 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.65 EUR
24+ 2.19 EUR
100+ 1.71 EUR
500+ 1.45 EUR
1000+ 1.18 EUR
2500+ 1.11 EUR
5000+ 1.05 EUR
Mindestbestellmenge: 20
FQD30N06TM fqd30n06-d.pdf
FQD30N06TM
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 4311 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.65 EUR
12+ 2.18 EUR
100+ 1.69 EUR
500+ 1.44 EUR
1000+ 1.17 EUR
Mindestbestellmenge: 10
FQD30N06TM fqd30n06-d.pdf
FQD30N06TM
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.7A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.7A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 11.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.1 EUR
Mindestbestellmenge: 2500
FQP30N06 ONSM-S-A0003585260-1.pdf?t.download=true&u=5oefqw
FQP30N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 30A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 15A, 10V
Power Dissipation (Max): 79W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 8358 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.67 EUR
50+ 2.95 EUR
100+ 2.34 EUR
500+ 1.98 EUR
1000+ 1.61 EUR
2000+ 1.52 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 8
FQP30N06L fqp30n06l-d.pdf
Hersteller: ON-Semicoductor
Trans MOSFET N-CH 60V 32A 3-Pin(3+Tab) TO-220AB FQP30N06L TFQP30n06l
Anzahl je Verpackung: 10 Stücke
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.91 EUR
Mindestbestellmenge: 20
FQPF30N06 FAIRS12505-1.pdf?t.download=true&u=5oefqw
FQPF30N06
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 21A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 10.5A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 25 V
auf Bestellung 82723 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
523+1.37 EUR
Mindestbestellmenge: 523
G030N06M GOFORD-G030N06M.pdf
G030N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12432 pF @ 30 V
auf Bestellung 800 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
800+2.54 EUR
Mindestbestellmenge: 800
G030N06T GOFORD-G030N06T.pdf
G030N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+1.85 EUR
Mindestbestellmenge: 1000
G030N06T GOFORD-G030N06T.pdf
G030N06T
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 223A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 223A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 30A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11999 pF @ 30 V
auf Bestellung 61 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+5.1 EUR
10+ 4.22 EUR
Mindestbestellmenge: 6
G130N06M GOFORD-G130N06M.pdf
G130N06M
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 90A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 1600 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1600+0.82 EUR
Mindestbestellmenge: 1600
G130N06M GOFORD-G130N06M.pdf
G130N06M
Hersteller: Goford Semiconductor
Description: N60V, 90A,RD<12M@10V,VTH1.0V~2.4
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: TO-263
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 36.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2867 pF @ 30 V
auf Bestellung 783 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.16 EUR
15+ 1.77 EUR
100+ 1.37 EUR
Mindestbestellmenge: 13
G130N06S GOFORD-G130N06S.pdf
G130N06S
Hersteller: Goford Semiconductor
Description: MOSFET, N-CH,60V,9A,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3068 pF @ 30 V
auf Bestellung 3990 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.4 EUR
22+ 1.21 EUR
100+ 0.83 EUR
500+ 0.7 EUR
1000+ 0.59 EUR
2000+ 0.53 EUR
Mindestbestellmenge: 19
G130N06S GOFORD-G130N06S.pdf
G130N06S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 60V 9A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
Power Dissipation (Max): 2.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.5 EUR
Mindestbestellmenge: 4000
G130N06S2 GOFORD-G130N06S2.pdf
G130N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.89 EUR
Mindestbestellmenge: 4000
G130N06S2 GOFORD-G130N06S2.pdf
G130N06S2
Hersteller: Goford Semiconductor
Description: MOSFET 2N-CH 60V 9A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3021pF @ 30V
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOP
Part Status: Active
auf Bestellung 3750 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.21 EUR
15+ 1.81 EUR
100+ 1.41 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
2000+ 0.91 EUR
Mindestbestellmenge: 12
IAUZ30N06S5L140ATMA1 Infineon_IAUZ30N06S5L140_DataSheet_v01_00_EN-1863858.pdf
IAUZ30N06S5L140ATMA1
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
auf Bestellung 24249 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
32+1.64 EUR
38+ 1.37 EUR
100+ 1.12 EUR
500+ 0.99 EUR
1000+ 0.84 EUR
2500+ 0.82 EUR
5000+ 0.79 EUR
Mindestbestellmenge: 32
IAUZ30N06S5L140ATMA1 Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6
IAUZ30N06S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.79 EUR
10000+ 0.75 EUR
Mindestbestellmenge: 5000
IAUZ30N06S5L140ATMA1 Infineon-IAUZ30N06S5L140-DataSheet-v01_00-EN.pdf?fileId=5546d46271bf4f920171f471819e61b6
IAUZ30N06S5L140ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TSDSON-8-32
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tj)
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TSDSON-8-32
Part Status: Active
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 30 V
auf Bestellung 24415 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.64 EUR
100+ 1.28 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
IPD30N06S215ATMA2 Infineon_IPD30N06S2_15_DS_v01_00_en-1226988.pdf
IPD30N06S215ATMA2
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
auf Bestellung 4465 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.68 EUR
23+ 2.31 EUR
100+ 1.94 EUR
500+ 1.77 EUR
1000+ 1.6 EUR
2500+ 1.56 EUR
5000+ 1.52 EUR
Mindestbestellmenge: 20
IPD30N06S215ATMA2 Infineon-IPD30N06S2_15-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e70a5e0a
IPD30N06S215ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 6575 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.85 EUR
10+ 3.15 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.69 EUR
Mindestbestellmenge: 7
IPD30N06S215ATMA2 Infineon-IPD30N06S2_15-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433e70a5e0a
IPD30N06S215ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 14.7mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.59 EUR
5000+ 1.51 EUR
Mindestbestellmenge: 2500
IPD30N06S223ATMA2 Infineon_IPD30N06S2_23_DS_v01_00_en-1731671.pdf
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
auf Bestellung 14479 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
18+3.04 EUR
21+ 2.51 EUR
100+ 1.96 EUR
500+ 1.66 EUR
1000+ 1.35 EUR
2500+ 1.27 EUR
5000+ 1.21 EUR
Mindestbestellmenge: 18
IPD30N06S223ATMA2 Infineon-IPD30N06S2_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba1b5d61&ack=t
IPD30N06S223ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 21A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 25 V
auf Bestellung 2350 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9+3.07 EUR
11+ 2.51 EUR
100+ 1.95 EUR
500+ 1.65 EUR
1000+ 1.35 EUR
Mindestbestellmenge: 9
IPD30N06S2L13ATMA4 Infineon_IPD30N06S2L_13_DS_v01_00_en-1731848.pdf
IPD30N06S2L13ATMA4
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
auf Bestellung 2427 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
16+3.46 EUR
18+ 2.91 EUR
100+ 2.33 EUR
250+ 2.28 EUR
500+ 1.98 EUR
1000+ 1.71 EUR
2500+ 1.64 EUR
Mindestbestellmenge: 16
IPD30N06S2L13ATMA4 Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t
IPD30N06S2L13ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 17954 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.61 EUR
10+ 3.01 EUR
100+ 2.39 EUR
500+ 2.02 EUR
1000+ 1.72 EUR
Mindestbestellmenge: 8
IPD30N06S2L13ATMA4 Infineon-IPD30N06S2L_13-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433ba8d5d65&ack=t
IPD30N06S2L13ATMA4
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 30A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 17500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.63 EUR
5000+ 1.57 EUR
12500+ 1.52 EUR
Mindestbestellmenge: 2500
IPD30N06S2L23ATMA1 IPD30N06S2L-23_green.pdf?folderId=db3a304412b407950112b4322c6d574b&fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-3
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 2010 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
650+1.1 EUR
Mindestbestellmenge: 650
IPD30N06S2L23ATMA3 Infineon_IPD30N06S2L_23_DS_v01_00_en-1226928.pdf
IPD30N06S2L23ATMA3
Hersteller: Infineon Technologies
MOSFET MOSFET_)40V 60V)
auf Bestellung 65966 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.98 EUR
32+ 1.67 EUR
100+ 1.44 EUR
500+ 1.22 EUR
1000+ 1.2 EUR
2500+ 1.18 EUR
Mindestbestellmenge: 27
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 14117 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.24 EUR
15+ 1.83 EUR
100+ 1.42 EUR
500+ 1.21 EUR
1000+ 1.19 EUR
Mindestbestellmenge: 12
IPD30N06S2L23ATMA3 Infineon-IPD30N06S2L_23-DS-v01_00-en.pdf?fileId=db3a304412b407950112b433bafe5d69
IPD30N06S2L23ATMA3
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A TO252-31
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 22A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.19 EUR
Mindestbestellmenge: 2500
IPD30N06S4L23ATMA2 Infineon_IPD30N06S4L_23_DS_v01_00_en-1731656.pdf
IPD30N06S4L23ATMA2
Hersteller: Infineon Technologies
MOSFET MOSFET
auf Bestellung 9329 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
27+1.96 EUR
33+ 1.61 EUR
100+ 1.35 EUR
500+ 1.23 EUR
1000+ 1.1 EUR
2500+ 1.06 EUR
5000+ 1.02 EUR
Mindestbestellmenge: 27
IPD30N06S4L23ATMA2 Infineon-IPD30N06S4L_23-DS-v01_00-en.pdf?fileId=db3a30431ff9881501203887944f0ca5
IPD30N06S4L23ATMA2
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 30A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 10µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1560 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1110 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.6 EUR
13+ 2.12 EUR
100+ 1.65 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
Mindestbestellmenge: 10
IPP030N06NF2SAKMA1 Infineon_IPP030N06NF2S_DataSheet_v02_02_EN-3043222.pdf
IPP030N06NF2SAKMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 1153 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
15+3.67 EUR
18+ 3.02 EUR
100+ 2.35 EUR
500+ 1.99 EUR
1000+ 1.62 EUR
2000+ 1.53 EUR
5000+ 1.45 EUR
Mindestbestellmenge: 15
IPP030N06NF2SAKMA1 Infineon-IPP030N06NF2S-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c80f4d3290180fd60b8793c83
IPP030N06NF2SAKMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.05mOhm @ 70A, 10V
Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 80µA
Supplier Device Package: PG-TO220-3-U05
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 30 V
auf Bestellung 862 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.67 EUR
50+ 2.94 EUR
100+ 2.33 EUR
500+ 1.98 EUR
Mindestbestellmenge: 8
IPP230N06L3G INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3G
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V
auf Bestellung 9620 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
693+1.03 EUR
Mindestbestellmenge: 693
IPP230N06L3GXKSA1 INFNS19526-1.pdf?t.download=true&u=5oefqw
IPP230N06L3GXKSA1
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A
Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V
Power Dissipation (Max): 36W
Vgs(th) (Max) @ Id: 2.2V @ 11µA
Supplier Device Package: PG-TO220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
831+0.86 EUR
Mindestbestellmenge: 831
IQE030N06NM5ATMA1 Infineon_IQE030N06NM5_DataSheet_v02_00_EN-2942432.pdf
IQE030N06NM5ATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 6843 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.86 EUR
10+ 5.72 EUR
100+ 4.55 EUR
250+ 4.34 EUR
500+ 3.85 EUR
1000+ 3.12 EUR
5000+ 2.99 EUR
Mindestbestellmenge: 8
IQE030N06NM5ATMA1 Infineon-IQE030N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8257277f7a
IQE030N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+2.96 EUR
Mindestbestellmenge: 5000
IQE030N06NM5ATMA1 Infineon-IQE030N06NM5-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8257277f7a
IQE030N06NM5ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TSON-8-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 7358 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.81 EUR
10+ 5.67 EUR
100+ 4.51 EUR
500+ 3.82 EUR
1000+ 3.24 EUR
2000+ 3.08 EUR
Mindestbestellmenge: 4
IQE030N06NM5CGATMA1 Infineon_IQE030N06NM5CG_DataSheet_v02_00_EN-2942450.pdf
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 4906 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.86 EUR
10+ 5.72 EUR
100+ 4.55 EUR
250+ 4.34 EUR
500+ 3.85 EUR
1000+ 3.12 EUR
5000+ 2.99 EUR
Mindestbestellmenge: 8
IQE030N06NM5CGATMA1 Infineon-IQE030N06NM5CG-DataSheet-v02_00-EN.pdf?fileId=5546d46278d64ffd01791c8ec8f70bee
IQE030N06NM5CGATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V PG-TTFN-9
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 137A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 50µA
Supplier Device Package: PG-TTFN-9-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 30 V
auf Bestellung 4960 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.81 EUR
10+ 5.67 EUR
100+ 4.51 EUR
500+ 3.82 EUR
1000+ 3.24 EUR
2000+ 3.08 EUR
Mindestbestellmenge: 4
IQE030N06NM5CGSCATMA1 Infineon_IQE030N06NM5CGSC_DataSheet_v02_00_EN-3073605.pdf
IQE030N06NM5CGSCATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 5820 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.79 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.63 EUR
250+ 4.37 EUR
500+ 4.11 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 8
IQE030N06NM5SCATMA1 Infineon_IQE030N06NM5SC_DataSheet_v02_00_EN-3073870.pdf
IQE030N06NM5SCATMA1
Hersteller: Infineon Technologies
MOSFET TRENCH 40<-<100V
auf Bestellung 3620 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.79 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.63 EUR
250+ 4.37 EUR
500+ 4.11 EUR
1000+ 3.54 EUR
Mindestbestellmenge: 8
MCAC30N06Y-TP MCAC30N06Y(DFN5060).pdf
Hersteller: Micro Commercial Components (MCC)
MOSFET 60V N-Ch 20Vgs 130A 30W
auf Bestellung 4834 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
29+1.81 EUR
33+ 1.61 EUR
100+ 1.1 EUR
500+ 0.92 EUR
1000+ 0.71 EUR
2500+ 0.7 EUR
5000+ 0.66 EUR
Mindestbestellmenge: 29
MTA30N06E FSCLS08796-1.pdf?t.download=true&u=5oefqw
MTA30N06E
Hersteller: Motorola
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Power Dissipation (Max): 50W (Tc)
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drain to Source Voltage (Vdss): 60 V
auf Bestellung 5283 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
148+4.87 EUR
Mindestbestellmenge: 148
MTAJ30N06ELFK
MTAJ30N06ELFK
Hersteller: onsemi
Description: NFET T0220FP JPN
Packaging: Bulk
Part Status: Active
auf Bestellung 396 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
163+4.44 EUR
Mindestbestellmenge: 163
NP30N06QDK-E1-AY np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471
NP30N06QDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 4955 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.58 EUR
10+ 5.46 EUR
100+ 4.35 EUR
500+ 3.68 EUR
1000+ 3.12 EUR
Mindestbestellmenge: 4
NP30N06QDK-E1-AY np30n06qdk60-v-30-dual-n-channel-power-mos-fetapplication-automotive?r=499471
NP30N06QDK-E1-AY
Hersteller: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 30A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 1W (Ta), 59W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
Rds On (Max) @ Id, Vgs: 14mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-HSON (5x5.4)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.96 EUR
Mindestbestellmenge: 2500
NP30N06QDK-E1-AY REN_r07ds1332ej0200_pomosfet_DST_20180524-3075889.pdf
NP30N06QDK-E1-AY
Hersteller: Renesas Electronics
MOSFET POWER TR2 AUTOMOTIVE MOS DUAL N-CH
auf Bestellung 2500 Stücke:
Lieferzeit 203-217 Tag (e)
Anzahl Preis ohne MwSt
8+6.63 EUR
10+ 5.51 EUR
100+ 4.37 EUR
250+ 4.21 EUR
500+ 3.69 EUR
1000+ 3.15 EUR
2500+ 2.96 EUR
Mindestbestellmenge: 8
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