Suchergebnisse für "30n60" : > 60

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HGTG30N60A4 HGTG30N60A4
Produktcode: 42509 		FAIR HGTG30N60A4.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
1+3.4 EUR
HGTG30N60A4D HGTG30N60A4D
Produktcode: 31842 		Intersil HGTG30N60A4D.pdf description Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
1+4 EUR
30N60A
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
30N60C3
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon_AIKW30N60CT_DS_v02_01_EN-1730980.pdf IGBT Transistors DISCRETES
auf Bestellung 287 Stücke:
Lieferzeit 14-28 Tag (e)
4+15.94 EUR
10+ 13.81 EUR
25+ 13.03 EUR
100+ 11.23 EUR
240+ 8.4 EUR
1200+ 7.98 EUR
Mindestbestellmenge: 4
AIKW30N60CTXKSA1 AIKW30N60CTXKSA1 Infineon Technologies Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.83 EUR
10+ 14.2 EUR
Mindestbestellmenge: 2
APT30N60BC6 APT30N60BC6 MICROCHIP (MICROSEMI) 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.25 EUR
8+ 9.95 EUR
10+ 9.84 EUR
Mindestbestellmenge: 7
APT30N60BC6 APT30N60BC6 MICROCHIP (MICROSEMI) 77169-apt30n60bc6-apt30n60sc6-datasheet Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
7+10.25 EUR
8+ 9.95 EUR
10+ 9.84 EUR
Mindestbestellmenge: 7
APT30N60BC6 Microchip Technology APT30N60B_SC6_A-1593879.pdf MOSFET MOSFET COOLMOS 600 V 30 A TO-247
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
4+13.62 EUR
100+ 11.78 EUR
Mindestbestellmenge: 4
BIDNW30N60H3 BIDNW30N60H3 Bourns Bourns_7_25_2022_BIDNW30N60H3_datasheet-3005228.pdf IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
auf Bestellung 2440 Stücke:
Lieferzeit 14-28 Tag (e)
6+9.07 EUR
10+ 7.62 EUR
25+ 7.57 EUR
100+ 6.16 EUR
250+ 5.49 EUR
600+ 5.17 EUR
Mindestbestellmenge: 6
BIDNW30N60H3 BIDNW30N60H3 Bourns Inc. BIDNW30N60H3.pdf Description: IGBT TRENCH FS 600V 60A TO247NL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2740 Stücke:
Lieferzeit 21-28 Tag (e)
3+9 EUR
30+ 7.13 EUR
120+ 6.11 EUR
510+ 5.43 EUR
1020+ 4.65 EUR
2010+ 4.38 EUR
Mindestbestellmenge: 3
BIDW30N60T BIDW30N60T Bourns Bourns_7_25_2022_BIDW30N60T_datasheet-3005225.pdf IGBT Transistors IGBT Discrete 600V, 30A in TO-247
auf Bestellung 3905 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.04 EUR
10+ 8.45 EUR
25+ 8.16 EUR
100+ 6.81 EUR
250+ 6.06 EUR
600+ 5.2 EUR
1200+ 4.99 EUR
Mindestbestellmenge: 6
BIDW30N60T BIDW30N60T Bourns Inc. BIDW30N60T.pdf Description: IGBT TRENCH FS 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 2397 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.96 EUR
30+ 7.89 EUR
120+ 6.77 EUR
510+ 6.01 EUR
1020+ 5.15 EUR
2010+ 4.85 EUR
Mindestbestellmenge: 3
DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
2+35.95 EUR
Mindestbestellmenge: 2
DAMI330N60 DAMI330N60 DACO Semiconductor Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
2+35.95 EUR
Mindestbestellmenge: 2
FCH130N60 FCH130N60 Fairchild Semiconductor FAIRS47137-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 144 Stücke:
Lieferzeit 21-28 Tag (e)
144+6.17 EUR
Mindestbestellmenge: 144
FCP130N60 FCP130N60 onsemi / Fairchild FCP130N60_D-2312110.pdf MOSFET N-Channel SuperFET II MOSFET
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
5+12.95 EUR
10+ 11.41 EUR
50+ 9.67 EUR
100+ 8.16 EUR
250+ 7.49 EUR
500+ 7.05 EUR
800+ 6.5 EUR
Mindestbestellmenge: 5
FCP130N60 FCP130N60 ON Semiconductor 3650094738295768fcp130n60.pdf Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
FCP130N60 FCP130N60 onsemi fcp130n60-d.pdf Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 10131 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.87 EUR
10+ 10.81 EUR
100+ 8.74 EUR
800+ 7.77 EUR
1600+ 6.66 EUR
2400+ 6.27 EUR
Mindestbestellmenge: 3
FCP130N60 FCP130N60 Fairchild Semiconductor ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 127 Stücke:
Lieferzeit 21-28 Tag (e)
127+6.94 EUR
Mindestbestellmenge: 127
FGA30N60LSDTU FGA30N60LSDTU Fairchild Semiconductor FAIRS46107-1.pdf?t.download=true&u=5oefqw Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 21-28 Tag (e)
104+6.96 EUR
Mindestbestellmenge: 104
HGT1N30N60A4D Fairchild Semiconductor FAIRS15402-1.pdf?t.download=true&u=5oefqw description Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 977 Stücke:
Lieferzeit 21-28 Tag (e)
16+47.42 EUR
Mindestbestellmenge: 16
HGT4E30N60B3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
63+11.52 EUR
Mindestbestellmenge: 63
HGT4E30N60C3S Harris Corporation Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)
59+12.34 EUR
Mindestbestellmenge: 59
HGTG30N60A4D Fairchaild hgtg30n60a4d-d.pdf description IGBT транзистор - [TO-247-3]; 600 V; 75 A Low Conduction Loss
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
1+38.37 EUR
10+ 33.84 EUR
HGTG30N60B3 HGTG30N60B3 Harris Corporation FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: 600 V, NPT IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 21-28 Tag (e)
95+7.59 EUR
Mindestbestellmenge: 95
HGTG30N60B3D ON-Semicoductor hgtg30n60b3d-d.pdf 60A; 600V; 208W; IGBT w/ Diode   HGTG30N60B3D THGTG30n60b3d
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.42 EUR
Mindestbestellmenge: 5
HGTG30N60B3_NL HGTG30N60B3_NL Fairchild Semiconductor FAIRS45873-1.pdf?t.download=true&u=5oefqw Description: IGBT, 60A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
51+14.5 EUR
Mindestbestellmenge: 51
HGTG30N60C3 HGTG30N60C3 Harris Corporation HRISS478-1.pdf?t.download=true&u=5oefqw Description: 63A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 21-28 Tag (e)
124+5.81 EUR
Mindestbestellmenge: 124
HGTG30N60C3D HGTG30N60C3D Fairchild Semiconductor FAIRS30031-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 63A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 7133 Stücke:
Lieferzeit 21-28 Tag (e)
44+16.71 EUR
Mindestbestellmenge: 44
IGA30N60H3XKSA1 IGA30N60H3XKSA1 Infineon Technologies IGA30N60H3.pdf Description: IGBT 600V 18A 43W TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
169+4.27 EUR
Mindestbestellmenge: 169
IGB30N60H3 IGB30N60H3 Infineon Technologies Infineon_IGB30N60H3_DS_v02_03_en-3360235.pdf IGBT Transistors 600v Hi-Speed SW IGBT
auf Bestellung 760 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
10+ 5.95 EUR
100+ 4.73 EUR
250+ 4.52 EUR
500+ 3.98 EUR
1000+ 3.38 EUR
2000+ 3.22 EUR
Mindestbestellmenge: 8
IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.36 EUR
Mindestbestellmenge: 1000
IGB30N60H3ATMA1 IGB30N60H3ATMA1 Infineon Technologies IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96 Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1502 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.07 EUR
10+ 5.88 EUR
100+ 4.68 EUR
500+ 3.96 EUR
Mindestbestellmenge: 4
IGB30N60T IGB30N60T Infineon Technologies Infineon_IGB30N60T_DataSheet_v02_05_EN-3361639.pdf IGBT Transistors LOW LOSS IGBT TECH 600V 30A
auf Bestellung 1009 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.73 EUR
10+ 5.67 EUR
25+ 5.33 EUR
100+ 4.58 EUR
250+ 4.32 EUR
500+ 4.06 EUR
1000+ 3.46 EUR
Mindestbestellmenge: 8
IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1970 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.68 EUR
10+ 5.6 EUR
100+ 4.53 EUR
500+ 4.02 EUR
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IGB30N60TATMA1 IGB30N60TATMA1 Infineon Technologies IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a Description: IGBT TRENCH 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.44 EUR
Mindestbestellmenge: 1000
IGP30N60H3 Infineon INFNS30178-1.pdf?t.download=true&u=5oefqw 60A; 600V; 187W; IGBT IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.93 EUR
Mindestbestellmenge: 5
IGP30N60H3 IGP30N60H3 Infineon Technologies Infineon_IGP30N60H3_DataSheet_v02_02_EN-3362059.pdf IGBT Transistors 600V 30A 187W
auf Bestellung 327 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.2 EUR
10+ 5.8 EUR
100+ 4.76 EUR
250+ 4.71 EUR
500+ 3.98 EUR
1000+ 3.25 EUR
5000+ 3.15 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES IGP30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.52 EUR
19+ 3.79 EUR
28+ 2.6 EUR
29+ 2.47 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 INFINEON TECHNOLOGIES IGP30N60H3-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 353 Stücke:
Lieferzeit 7-14 Tag (e)
16+4.52 EUR
19+ 3.79 EUR
28+ 2.6 EUR
29+ 2.47 EUR
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IGP30N60H3XKSA1 IGP30N60H3XKSA1 Infineon Technologies IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6 Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 34 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.15 EUR
Mindestbestellmenge: 4
IGW30N60H3 IGW30N60H3 Infineon Technologies Infineon_IGW30N60H3_DataSheet_v02_02_EN-3362220.pdf IGBT Transistors 600V HI SPEED SW IGBT
auf Bestellung 1253 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.07 EUR
10+ 6.45 EUR
25+ 5.49 EUR
100+ 4.73 EUR
240+ 4.65 EUR
480+ 3.64 EUR
1200+ 3.46 EUR
Mindestbestellmenge: 8
IGW30N60H3FKSA1 IGW30N60H3FKSA1 Infineon Technologies infineon-igw30n60h3-datasheet-v02_02-en.pdf Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60H3FKSA1 IGW30N60H3FKSA1 Infineon Technologies INFNS30182-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1745 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.05 EUR
30+ 5.57 EUR
120+ 4.78 EUR
510+ 4.25 EUR
1020+ 3.64 EUR
Mindestbestellmenge: 4
IGW30N60T IGW30N60T Infineon Technologies Infineon_IGW30N60T_DataSheet_v02_08_EN-3361611.pdf IGBT Transistors LOW LOSS IGBT TECH 600V 30A
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.84 EUR
10+ 6.24 EUR
25+ 5.54 EUR
100+ 4.89 EUR
240+ 4.71 EUR
480+ 3.69 EUR
1200+ 3.48 EUR
Mindestbestellmenge: 8
IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.51 EUR
Mindestbestellmenge: 11
IGW30N60TFKSA1 Infineon INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw 45A; 600V; 187W; IGBT IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
5+7.7 EUR
Mindestbestellmenge: 5
IGW30N60TFKSA1 IGW30N60TFKSA1 INFINEON TECHNOLOGIES IGW30N60TFKSA1-DTE.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.51 EUR
12+ 5.96 EUR
Mindestbestellmenge: 11
IGW30N60TFKSA1 IGW30N60TFKSA1 Infineon Technologies infineon-igw30n60t-datasheet-v02_08-en.pdf Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60TFKSA1 IGW30N60TFKSA1 Infineon Technologies INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 125 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.12 EUR
30+ 5.66 EUR
120+ 4.85 EUR
Mindestbestellmenge: 4
IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies Infineon_IGW30N60TP_DataSheet_v02_01_EN-3362241.pdf IGBT Transistors INDUSTRY 14
auf Bestellung 541 Stücke:
Lieferzeit 14-28 Tag (e)
9+6.06 EUR
13+ 4.32 EUR
100+ 4 EUR
240+ 3.98 EUR
480+ 2.89 EUR
1200+ 2.73 EUR
2640+ 2.65 EUR
Mindestbestellmenge: 9
IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies infineon-igw30n60t-datasheet-v02_08-en.pdf Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60TPXKSA1 IGW30N60TPXKSA1 Infineon Technologies Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae Description: IGBT TRENCH/FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 4485 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.03 EUR
30+ 4.84 EUR
120+ 3.98 EUR
510+ 3.37 EUR
1020+ 2.86 EUR
2010+ 2.72 EUR
Mindestbestellmenge: 5
IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies 12671infineon-ikw30n60dtp-ds-v02_01-en.pdffileid5546d46253a864fe0153cb.pdf Trans IGBT Chip N-CH 600V 53A 200000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 1920 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
30+ 5.1 EUR
120+ 4.37 EUR
510+ 3.88 EUR
1020+ 3.32 EUR
Mindestbestellmenge: 5
IKW30N60DTPXKSA1 IKW30N60DTPXKSA1 Infineon Technologies Infineon_IKW30N60DTP_DataSheet_v02_01_EN-3361844.pdf IGBT Transistors INDUSTRY 14
auf Bestellung 389 Stücke:
Lieferzeit 180-194 Tag (e)
9+5.85 EUR
25+ 5.15 EUR
100+ 4.39 EUR
240+ 4.37 EUR
480+ 3.33 EUR
1200+ 3.15 EUR
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IKW30N60H3 Infineon 60A; 600V; 187W; IGBT w/ Diode   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.74 EUR
Mindestbestellmenge: 5
IKW30N60H3 Infineon 60A; 600V; 187W; IGBT w/ Diode   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
5+6.74 EUR
Mindestbestellmenge: 5
IKW30N60H3 IKW30N60H3 Infineon Technologies Infineon_IKW30N60H3_DataSheet_v02_02_EN-3362119.pdf IGBT Transistors 600V 30A 187W
auf Bestellung 1585 Stücke:
Lieferzeit 14-28 Tag (e)
7+8.19 EUR
10+ 6.89 EUR
25+ 6.5 EUR
100+ 5.56 EUR
240+ 5.17 EUR
480+ 4.97 EUR
1200+ 4.24 EUR
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HGTG30N60A4
Produktcode: 42509		 HGTG30N60A4.pdf
HGTG30N60A4
Hersteller: FAIR
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 25/150
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+3.4 EUR
HGTG30N60A4D
Produktcode: 31842		 description HGTG30N60A4D.pdf
HGTG30N60A4D
Hersteller: Intersil
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600
Vce: 1,8
Ic 25: 75
Ic 100: 60
Pd 25: 463
td(on)/td(off) 100-150 Grad: 24/180
auf Bestellung 1 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+4 EUR
30N60A
auf Bestellung 48 Stücke:
Lieferzeit 21-28 Tag (e)
30N60C3
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
AIKW30N60CTXKSA1 Infineon_AIKW30N60CT_DS_v02_01_EN-1730980.pdf
AIKW30N60CTXKSA1
Hersteller: Infineon Technologies
IGBT Transistors DISCRETES
auf Bestellung 287 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+15.94 EUR
10+ 13.81 EUR
25+ 13.03 EUR
100+ 11.23 EUR
240+ 8.4 EUR
1200+ 7.98 EUR
Mindestbestellmenge: 4
AIKW30N60CTXKSA1 Infineon-AIKW30N60CT-DS-v02_01-EN.pdf?fileId=5546d4625c167129015c5382bd177c9f
AIKW30N60CTXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-41
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 690µJ (on), 770µJ (off)
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.83 EUR
10+ 14.2 EUR
Mindestbestellmenge: 2
APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
7+10.25 EUR
8+ 9.95 EUR
10+ 9.84 EUR
Mindestbestellmenge: 7
APT30N60BC6 77169-apt30n60bc6-apt30n60sc6-datasheet
APT30N60BC6
Hersteller: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+10.25 EUR
8+ 9.95 EUR
10+ 9.84 EUR
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APT30N60BC6 APT30N60B_SC6_A-1593879.pdf
Hersteller: Microchip Technology
MOSFET MOSFET COOLMOS 600 V 30 A TO-247
auf Bestellung 6 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
4+13.62 EUR
100+ 11.78 EUR
Mindestbestellmenge: 4
BIDNW30N60H3 Bourns_7_25_2022_BIDNW30N60H3_datasheet-3005228.pdf
BIDNW30N60H3
Hersteller: Bourns
IGBT Transistors IGBT Discrete 600V, 30A in TO-247N
auf Bestellung 2440 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+9.07 EUR
10+ 7.62 EUR
25+ 7.57 EUR
100+ 6.16 EUR
250+ 5.49 EUR
600+ 5.17 EUR
Mindestbestellmenge: 6
BIDNW30N60H3 BIDNW30N60H3.pdf
BIDNW30N60H3
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO247NL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
Supplier Device Package: TO-247N-3L
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 230 W
auf Bestellung 2740 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9 EUR
30+ 7.13 EUR
120+ 6.11 EUR
510+ 5.43 EUR
1020+ 4.65 EUR
2010+ 4.38 EUR
Mindestbestellmenge: 3
BIDW30N60T Bourns_7_25_2022_BIDW30N60T_datasheet-3005225.pdf
BIDW30N60T
Hersteller: Bourns
IGBT Transistors IGBT Discrete 600V, 30A in TO-247
auf Bestellung 3905 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
6+10.04 EUR
10+ 8.45 EUR
25+ 8.16 EUR
100+ 6.81 EUR
250+ 6.06 EUR
600+ 5.2 EUR
1200+ 4.99 EUR
Mindestbestellmenge: 6
BIDW30N60T BIDW30N60T.pdf
BIDW30N60T
Hersteller: Bourns Inc.
Description: IGBT TRENCH FS 600V 60A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/67ns
Switching Energy: 1.85mJ (on), 450µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 76 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 230 W
auf Bestellung 2397 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+9.96 EUR
30+ 7.89 EUR
120+ 6.77 EUR
510+ 6.01 EUR
1020+ 5.15 EUR
2010+ 4.85 EUR
Mindestbestellmenge: 3
DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
2+35.95 EUR
Mindestbestellmenge: 2
DAMI330N60
DAMI330N60
Hersteller: DACO Semiconductor
Category: Transistor modules MOSFET
Description: Module; single transistor; 60V; 300A; SOT227B; screw; screw
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Case: SOT227B
On-state resistance: 1.5mΩ
Semiconductor structure: single transistor
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
2+35.95 EUR
Mindestbestellmenge: 2
FCH130N60 FAIRS47137-1.pdf?t.download=true&u=5oefqw
FCH130N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 144 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
144+6.17 EUR
Mindestbestellmenge: 144
FCP130N60 FCP130N60_D-2312110.pdf
FCP130N60
Hersteller: onsemi / Fairchild
MOSFET N-Channel SuperFET II MOSFET
auf Bestellung 25 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
5+12.95 EUR
10+ 11.41 EUR
50+ 9.67 EUR
100+ 8.16 EUR
250+ 7.49 EUR
500+ 7.05 EUR
800+ 6.5 EUR
Mindestbestellmenge: 5
FCP130N60 3650094738295768fcp130n60.pdf
FCP130N60
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
FCP130N60 fcp130n60-d.pdf
FCP130N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 10131 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.87 EUR
10+ 10.81 EUR
100+ 8.74 EUR
800+ 7.77 EUR
1600+ 6.66 EUR
2400+ 6.27 EUR
Mindestbestellmenge: 3
FCP130N60 ONSM-S-A0003584702-1.pdf?t.download=true&u=5oefqw
FCP130N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 127 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
127+6.94 EUR
Mindestbestellmenge: 127
FGA30N60LSDTU FAIRS46107-1.pdf?t.download=true&u=5oefqw
FGA30N60LSDTU
Hersteller: Fairchild Semiconductor
Description: INSULATED GATE BIPOLAR TRANSISTO
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
auf Bestellung 551 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
104+6.96 EUR
Mindestbestellmenge: 104
HGT1N30N60A4D description FAIRS15402-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: IGBT, 96A, 600V, N-CHANNEL
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -55°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: SOT-227B
Part Status: Obsolete
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 255 W
Current - Collector Cutoff (Max): 250 µA
auf Bestellung 977 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
16+47.42 EUR
Mindestbestellmenge: 16
HGT4E30N60B3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+11.52 EUR
Mindestbestellmenge: 63
HGT4E30N60C3S
Hersteller: Harris Corporation
Description: IGBT 60A, 600V, N CHANNEL, TO 26
Packaging: Bulk
Part Status: Active
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
59+12.34 EUR
Mindestbestellmenge: 59
HGTG30N60A4D description hgtg30n60a4d-d.pdf
Hersteller: Fairchaild
IGBT транзистор - [TO-247-3]; 600 V; 75 A Low Conduction Loss
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+38.37 EUR
10+ 33.84 EUR
HGTG30N60B3 FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3
Hersteller: Harris Corporation
Description: 600 V, NPT IGBT
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 500µJ (on), 680µJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 170 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 16153 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
95+7.59 EUR
Mindestbestellmenge: 95
HGTG30N60B3D hgtg30n60b3d-d.pdf
Hersteller: ON-Semicoductor
60A; 600V; 208W; IGBT w/ Diode   HGTG30N60B3D THGTG30n60b3d
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.42 EUR
Mindestbestellmenge: 5
HGTG30N60B3_NL FAIRS45873-1.pdf?t.download=true&u=5oefqw
HGTG30N60B3_NL
Hersteller: Fairchild Semiconductor
Description: IGBT, 60A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247
IGBT Type: NPT
Td (on/off) @ 25°C: 36ns/137ns
Switching Energy: 550µJ (on), 680µJ (off)
Test Condition: 480V, 60A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 208 W
auf Bestellung 51 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
51+14.5 EUR
Mindestbestellmenge: 51
HGTG30N60C3 HRISS478-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3
Hersteller: Harris Corporation
Description: 63A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-274AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: SUPER-247 (TO-274AA)
Td (on/off) @ 25°C: 40ns/320ns
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Test Condition: 480V, 30A, 3Ohm, 15V
Gate Charge: 250 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 1321 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
124+5.81 EUR
Mindestbestellmenge: 124
HGTG30N60C3D FAIRS30031-1.pdf?t.download=true&u=5oefqw
HGTG30N60C3D
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 63A TO247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Part Status: Active
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
auf Bestellung 7133 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
44+16.71 EUR
Mindestbestellmenge: 44
IGA30N60H3XKSA1 IGA30N60H3.pdf
IGA30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT 600V 18A 43W TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 43 W
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
169+4.27 EUR
Mindestbestellmenge: 169
IGB30N60H3 Infineon_IGB30N60H3_DS_v02_03_en-3360235.pdf
IGB30N60H3
Hersteller: Infineon Technologies
IGBT Transistors 600v Hi-Speed SW IGBT
auf Bestellung 760 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.07 EUR
10+ 5.95 EUR
100+ 4.73 EUR
250+ 4.52 EUR
500+ 3.98 EUR
1000+ 3.38 EUR
2000+ 3.22 EUR
Mindestbestellmenge: 8
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+3.36 EUR
Mindestbestellmenge: 1000
IGB30N60H3ATMA1 IGB30N60H3_Rev1_1G.pdf?folderId=db3a30431c69a49d011c6f86019b00a1&fileId=db3a30432a40a650012a46d3374d2b96
IGB30N60H3ATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1502 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.07 EUR
10+ 5.88 EUR
100+ 4.68 EUR
500+ 3.96 EUR
Mindestbestellmenge: 4
IGB30N60T Infineon_IGB30N60T_DataSheet_v02_05_EN-3361639.pdf
IGB30N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS IGBT TECH 600V 30A
auf Bestellung 1009 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.73 EUR
10+ 5.67 EUR
25+ 5.33 EUR
100+ 4.58 EUR
250+ 4.32 EUR
500+ 4.06 EUR
1000+ 3.46 EUR
Mindestbestellmenge: 8
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1970 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.68 EUR
10+ 5.6 EUR
100+ 4.53 EUR
500+ 4.02 EUR
Mindestbestellmenge: 4
IGB30N60TATMA1 IGB30N60T+Rev2_3G.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b4280cd93d4a
IGB30N60TATMA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 60A TO263-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO263-3-2
IGBT Type: Trench
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1000+3.44 EUR
Mindestbestellmenge: 1000
IGP30N60H3 INFNS30178-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
60A; 600V; 187W; IGBT IGP30N60H3XKSA1 IGP30N60H3 TIGP30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 33 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+6.93 EUR
Mindestbestellmenge: 5
IGP30N60H3 Infineon_IGP30N60H3_DataSheet_v02_02_EN-3362059.pdf
IGP30N60H3
Hersteller: Infineon Technologies
IGBT Transistors 600V 30A 187W
auf Bestellung 327 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.2 EUR
10+ 5.8 EUR
100+ 4.76 EUR
250+ 4.71 EUR
500+ 3.98 EUR
1000+ 3.25 EUR
5000+ 3.15 EUR
Mindestbestellmenge: 8
IGP30N60H3XKSA1 IGP30N60H3-DTE.pdf
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
auf Bestellung 353 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
16+4.52 EUR
19+ 3.79 EUR
28+ 2.6 EUR
29+ 2.47 EUR
Mindestbestellmenge: 16
IGP30N60H3XKSA1 IGP30N60H3-DTE.pdf
IGP30N60H3XKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO220-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO220-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Manufacturer series: H3
Anzahl je Verpackung: 1 Stücke
auf Bestellung 353 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
16+4.52 EUR
19+ 3.79 EUR
28+ 2.6 EUR
29+ 2.47 EUR
Mindestbestellmenge: 16
IGP30N60H3XKSA1 IGP30N60H3_Rev1_1G.pdf?folderId=db3a3043156fd5730115f56849b61941&fileId=db3a3043266237920126b8bf01371ef6
IGP30N60H3XKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/207ns
Switching Energy: 1.17mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 34 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.15 EUR
Mindestbestellmenge: 4
IGW30N60H3 Infineon_IGW30N60H3_DataSheet_v02_02_EN-3362220.pdf
IGW30N60H3
Hersteller: Infineon Technologies
IGBT Transistors 600V HI SPEED SW IGBT
auf Bestellung 1253 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+7.07 EUR
10+ 6.45 EUR
25+ 5.49 EUR
100+ 4.73 EUR
240+ 4.65 EUR
480+ 3.64 EUR
1200+ 3.46 EUR
Mindestbestellmenge: 8
IGW30N60H3FKSA1 infineon-igw30n60h3-datasheet-v02_02-en.pdf
IGW30N60H3FKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 60A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60H3FKSA1 INFNS30182-1.pdf?t.download=true&u=5oefqw
IGW30N60H3FKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 21ns/207ns
Switching Energy: 1.38mJ
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 165 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 187 W
auf Bestellung 1745 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.05 EUR
30+ 5.57 EUR
120+ 4.78 EUR
510+ 4.25 EUR
1020+ 3.64 EUR
Mindestbestellmenge: 4
IGW30N60T Infineon_IGW30N60T_DataSheet_v02_08_EN-3361611.pdf
IGW30N60T
Hersteller: Infineon Technologies
IGBT Transistors LOW LOSS IGBT TECH 600V 30A
auf Bestellung 30 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
8+6.84 EUR
10+ 6.24 EUR
25+ 5.54 EUR
100+ 4.89 EUR
240+ 4.71 EUR
480+ 3.69 EUR
1200+ 3.48 EUR
Mindestbestellmenge: 8
IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
11+6.51 EUR
Mindestbestellmenge: 11
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon
45A; 600V; 187W; IGBT IGW30N60TFKSA1 IGW30N60T TIGW30n60t
Anzahl je Verpackung: 5 Stücke
auf Bestellung 55 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+7.7 EUR
Mindestbestellmenge: 5
IGW30N60TFKSA1 IGW30N60TFKSA1-DTE.pdf
IGW30N60TFKSA1
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 30A; 187W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 30A
Power dissipation: 187W
Case: TO247-3
Gate-emitter voltage: ±20V
Mounting: THT
Kind of package: tube
Anzahl je Verpackung: 1 Stücke
auf Bestellung 11 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
11+6.51 EUR
12+ 5.96 EUR
Mindestbestellmenge: 11
IGW30N60TFKSA1 infineon-igw30n60t-datasheet-v02_08-en.pdf
IGW30N60TFKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60TFKSA1 INFN-S-A0001299666-1.pdf?t.download=true&u=5oefqw
IGW30N60TFKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 60A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 30A
Supplier Device Package: PG-TO247-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 23ns/254ns
Switching Energy: 1.46mJ
Test Condition: 400V, 30A, 10.6Ohm, 15V
Gate Charge: 167 nC
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 187 W
auf Bestellung 125 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.12 EUR
30+ 5.66 EUR
120+ 4.85 EUR
Mindestbestellmenge: 4
IGW30N60TPXKSA1 Infineon_IGW30N60TP_DataSheet_v02_01_EN-3362241.pdf
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 541 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
9+6.06 EUR
13+ 4.32 EUR
100+ 4 EUR
240+ 3.98 EUR
480+ 2.89 EUR
1200+ 2.73 EUR
2640+ 2.65 EUR
Mindestbestellmenge: 9
IGW30N60TPXKSA1 infineon-igw30n60t-datasheet-v02_08-en.pdf
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 45A 187000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
IGW30N60TPXKSA1 Infineon-IGW30N60TP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb9952d7cae
IGW30N60TPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH/FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 4485 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.03 EUR
30+ 4.84 EUR
120+ 3.98 EUR
510+ 3.37 EUR
1020+ 2.86 EUR
2010+ 2.72 EUR
Mindestbestellmenge: 5
IKW30N60DTPXKSA1 12671infineon-ikw30n60dtp-ds-v02_01-en.pdffileid5546d46253a864fe0153cb.pdf
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 53A 200000mW 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
IKW30N60DTPXKSA1 Infineon-IKW30N60DTP-DS-v02_01-EN.pdf?fileId=5546d46253a864fe0153cbb98d0e7cac
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 53A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 76 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: PG-TO247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 15ns/179ns
Switching Energy: 710µJ (on), 420µJ (off)
Test Condition: 400V, 30A, 10.5Ohm, 15V
Gate Charge: 130 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 53 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 200 W
auf Bestellung 1920 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
30+ 5.1 EUR
120+ 4.37 EUR
510+ 3.88 EUR
1020+ 3.32 EUR
Mindestbestellmenge: 5
IKW30N60DTPXKSA1 Infineon_IKW30N60DTP_DataSheet_v02_01_EN-3361844.pdf
IKW30N60DTPXKSA1
Hersteller: Infineon Technologies
IGBT Transistors INDUSTRY 14
auf Bestellung 389 Stücke:
Lieferzeit 180-194 Tag (e)
Anzahl Preis ohne MwSt
9+5.85 EUR
25+ 5.15 EUR
100+ 4.39 EUR
240+ 4.37 EUR
480+ 3.33 EUR
1200+ 3.15 EUR
Mindestbestellmenge: 9
IKW30N60H3
Hersteller: Infineon
60A; 600V; 187W; IGBT w/ Diode   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+6.74 EUR
Mindestbestellmenge: 5
IKW30N60H3
Hersteller: Infineon
60A; 600V; 187W; IGBT w/ Diode   IKW30N60H3 TIKW30n60h3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+6.74 EUR
Mindestbestellmenge: 5
IKW30N60H3 Infineon_IKW30N60H3_DataSheet_v02_02_EN-3362119.pdf
IKW30N60H3
Hersteller: Infineon Technologies
IGBT Transistors 600V 30A 187W
auf Bestellung 1585 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
7+8.19 EUR
10+ 6.89 EUR
25+ 6.5 EUR
100+ 5.56 EUR
240+ 5.17 EUR
480+ 4.97 EUR
1200+ 4.24 EUR
Mindestbestellmenge: 7
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