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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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A850491714N04A | Amphenol Interconnect India |
Description: CONN BACKSH W/CLMP SZ14 15 SIL Packaging: Bag Features: Clamp Screws Color: Silver Material: Aluminum Alloy Shielding: Shielded Type: Backshell, Cable Clamp Shell Size - Insert: 14, 15 Cable Exit: 180° Ingress Protection: Environment Resistant Plating: Electroless Nickel Cable Opening: 0.380" ~ 0.500" (9.65mm ~ 12.70mm) Part Status: Active Primary Material: Metal |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC014N04LS | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
auf Bestellung 32 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC014N04LSATMA1 | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
auf Bestellung 975 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC014N04LSATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 32/100A SUPERSO8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SuperSO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V |
auf Bestellung 4874 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC014N04LSI | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
auf Bestellung 30585 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC014N04LSI | Infineon Technologies | N-канальний ПТ; Udss, В = 40; Id = 100 А; Ciss, пФ @ Uds, В = 4000 @ 20; Qg, нКл = 55 @ 10 В; Rds = 1,45 мОм @ 50 A, 10 В; Ugs(th) = 2 В @ 250 мкА; Р, Вт = 2,5; 96; Тексп, °C = -55...+150; Тип монт. = smd; TDSON-8 FL |
auf Bestellung 1596 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014N04LSIATMA1 | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS |
auf Bestellung 100859 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC014N04LSIATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R |
auf Bestellung 3765 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014N04LSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 31A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V |
auf Bestellung 72091 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC014N04LSIATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 31A/100A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V |
auf Bestellung 70000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC014N04LSTATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V |
auf Bestellung 1987 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC014N04LSTATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC014N04LSTATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 33A/100A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TDSON-8 FL Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V |
auf Bestellung 3860 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC054N04NS G | Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 |
auf Bestellung 134246 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC054N04NSGATMA1 | Infineon Technologies | MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3 |
auf Bestellung 56800 Stücke: Lieferzeit 14-28 Tag (e) |
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BSC054N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 17A/81A TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 27µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V |
auf Bestellung 30381 Stücke: Lieferzeit 21-28 Tag (e) |
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BSC054N04NSGATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 17A/81A TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 4V @ 27µA Supplier Device Package: PG-TDSON-8-5 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ024N04LS6ATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V |
auf Bestellung 9855 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ024N04LS6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 24A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 89266 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ024N04LS6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 24A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V |
auf Bestellung 85000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ034N04LS | Infineon Technologies | MOSFET TRENCH <= 40V |
auf Bestellung 93 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ034N04LSATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V |
auf Bestellung 49 Stücke: Lieferzeit 14-28 Tag (e) |
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BSZ034N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 19A/40A TSDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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BSZ034N04LSATMA1 | Infineon Technologies |
Description: MOSFET N-CH 40V 19A/40A TSDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 52W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PG-TSDSON-8-FL Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 20195 Stücke: Lieferzeit 21-28 Tag (e) |
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CS1000M-24N-04A | EXCELSYS / Advanced Energy |
Description: AC/DC CONVERTER 24V 1000W Power (Watts): 1000W Features: Adjustable Output, PFC, PMBus™, Remote Sense, Universal Input Packaging: Bulk Size / Dimension: 10.30" L x 5.00" W x 1.54" H (261.6mm x 127.0mm x 39.1mm) Mounting Type: Chassis Mount Voltage - Input: 85 ~ 264 VAC Type: Enclosed Operating Temperature: -40°C ~ 85°C (With Derating) Applications: ITE (Commercial), Medical Approval Agency: CSA, EN, IEC, UL Efficiency: 94% Voltage - Output 1: 24V Part Status: Active Number of Outputs: 1 Voltage - Isolation: 4 kV Standard Number: 60601-1; 62368-1 Current - Output 1: 41.6 A |
auf Bestellung 25 Stücke: Lieferzeit 21-28 Tag (e) |
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DCP4N047006ID2KSC9 | WIMA | Film Capacitors DC-LINK MKP 4 7.0 F 900 VDC 17x34.5x31.5 PCM27.5 |
auf Bestellung 128 Stücke: Lieferzeit 14-28 Tag (e) |
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DCP4N047006ID2KSC9 | WIMA |
Description: CAP FILM 7UF 10% 900VDC RAD Packaging: Bulk Tolerance: ±10% Package / Case: Radial Mounting Type: Through Hole Operating Temperature: -55°C ~ 105°C Applications: Automotive; DC Link, DC Filtering Lead Spacing: 1.083" (27.50mm) Termination: PC Pins Ratings: AEC-Q200 Dielectric Material: Polypropylene (PP), Metallized Voltage Rating - DC: 900V Height - Seated (Max): 1.358" (34.50mm) Part Status: Active Capacitance: 7 µF ESR (Equivalent Series Resistance): 13 mOhms Size / Dimension: 1.240" L x 0.669" W (31.50mm x 17.00mm) |
auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) |
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FDB024N04AL7 | Fairchild Semiconductor |
Description: MOSFET N-CH 40V 100A TO263-7 Packaging: Bulk Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V |
auf Bestellung 33049 Stücke: Lieferzeit 21-28 Tag (e) |
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IPB014N04NF2SATMA1 | Infineon Technologies | MOSFET TRENCH <= 40V |
auf Bestellung 289 Stücke: Lieferzeit 14-28 Tag (e) |
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IPB014N04NF2SATMA1 | Infineon Technologies |
Description: TRENCH <= 40V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc) Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V Power Dissipation (Max): 3.8W (Ta), 188W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 126µA Supplier Device Package: PG-TO263-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V |
auf Bestellung 616 Stücke: Lieferzeit 21-28 Tag (e) |
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M85049/1714N04 | Glenair | Circular MIL Spec Backshells STRAIGHT BACKSHELL |
auf Bestellung 7 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/1714N04A | Amphenol Pcd | Circular MIL Spec Backshells 17 Backshell Env-EMI/RFI |
auf Bestellung 3 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/2914N04 | Glenair | Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04 |
auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/2914N04 | Amphenol Pcd | Circular MIL Spec Backshells 29 Backshell Non Env |
auf Bestellung 18 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/3614N04 | Amphenol Pcd | Circular MIL Spec Backshells 36 Backshell Non Env-EMI/RFI |
auf Bestellung 19 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/3614N04 | Glenair | Circular MIL Spec Backshells Backshell |
auf Bestellung 10 Stücke: Lieferzeit 14-28 Tag (e) |
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M85049/3614N04A | Glenair | Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ14 CLMP SZ04 NI |
auf Bestellung 4 Stücke: Lieferzeit 14-28 Tag (e) |
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NP74N04YUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 75A 8HSON Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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NP74N04YUG-E1-AY | Renesas Electronics Corporation |
Description: MOSFET N-CH 40V 75A 8HSON Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Exposed Pad Mounting Type: Surface Mount Operating Temperature: 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V Power Dissipation (Max): 1W (Ta), 120W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HSON Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS0D4N04XMT1G | onsemi | MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE |
auf Bestellung 1500 Stücke: Lieferzeit 259-273 Tag (e) |
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NTMTS0D4N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 79.8A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 244W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V |
auf Bestellung 1419 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMTS0D4N04CTXG | onsemi |
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 244W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V |
auf Bestellung 2999 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMTS0D4N04CTXG | onsemi |
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc) Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta), 244W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V |
auf Bestellung 2999 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMYS2D4N04CTWG | onsemi | MOSFET 40V 140A 2.3Ohm Single N-Channel |
auf Bestellung 2935 Stücke: Lieferzeit 14-28 Tag (e) |
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NTMYS2D4N04CTWG | onsemi |
Description: MOSFET N-CH 40V 30A/138A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
auf Bestellung 2850 Stücke: Lieferzeit 21-28 Tag (e) |
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NTTFS004N04CTAG | onsemi | MOSFET Single N-Chn Pwr Mosfet 40V |
auf Bestellung 4500 Stücke: Lieferzeit 126-140 Tag (e) |
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NVMFWS0D4N04XMT1G | onsemi |
Description: 40V T10M IN S08FL GEN 2 PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 519A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFWS0D4N04XMT1G | onsemi |
Description: 40V T10M IN S08FL GEN 2 PACKAGE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 519A (Tc) Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Power Dissipation (Max): 197W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 330µA Supplier Device Package: 8-DFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFWS0D4N04XMT1G | onsemi | MOSFET 40V T10M IN S08FL GEN 2 PACKAGE |
auf Bestellung 1370 Stücke: Lieferzeit 259-273 Tag (e) |
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NVMTS0D4N04CLTXG | onsemi |
Description: MOSFET N-CH 40V 553.8A 8DFNW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc) Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V Power Dissipation (Max): 5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 102 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMYS2D4N04CTWG | onsemi | MOSFET Power Mosfet 40V 2.4ohm 130A |
auf Bestellung 3000 Stücke: Lieferzeit 14-28 Tag (e) |
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NVMYS2D4N04CTWG | onsemi |
Description: MOSFET N-CH 40V 30A/138A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2980 Stücke: Lieferzeit 21-28 Tag (e) |
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NVTFS004N04CTAG | onsemi | MOSFET Single N-Chn Pwr Mosfet 40V |
auf Bestellung 1500 Stücke: Lieferzeit 126-140 Tag (e) |
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NVTYS004N04CLTWG | onsemi |
Description: T6 40V N-CH LL IN LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2949 Stücke: Lieferzeit 21-28 Tag (e) |
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WA 14N0470k | MYG |
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k Anzahl je Verpackung: 100 Stücke |
auf Bestellung 79 Stücke: Lieferzeit 7-14 Tag (e) |
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WA 14N0470k | BOCHEN |
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k Anzahl je Verpackung: 100 Stücke |
auf Bestellung 1700 Stücke: Lieferzeit 7-14 Tag (e) |
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XW4N-04D1-A | Omron Electronics Inc-EMC Div |
Description: SOCKET,SINGLE-ROW,,GOLD, Packaging: Tray Features: Lever Actuated Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Pitch: 0.138" (3.50mm) Type: Plug, Female Sockets Operating Temperature: -40°C ~ 100°C Termination Style: Screwless - Leg Spring, Push-In Spring Current - IEC: 8A Number of Levels: 1 Wire Gauge or Range - AWG: 16-24 AWG Wire Gauge or Range - mm²: 0.2-1.5mm² Positions Per Level: 4 Plug Wire Entry: 180° Contact Mating Finish: Gold Part Status: Active Current - UL: 8 A Voltage - IEC: 160 V Voltage - UL: 300 V |
auf Bestellung 93 Stücke: Lieferzeit 21-28 Tag (e) |
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XW4N-04D1-S | Omron Electronics Inc-EMC Div |
Description: SOCKET,SINGLE-ROW,,TIN REFLOW, Packaging: Tray Features: Lever Actuated Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Pitch: 0.138" (3.50mm) Type: Plug, Female Sockets Operating Temperature: -40°C ~ 100°C Termination Style: Screwless - Leg Spring, Push-In Spring Current - IEC: 8A Number of Levels: 1 Wire Gauge or Range - AWG: 16-24 AWG Wire Gauge or Range - mm²: 0.2-1.5mm² Positions Per Level: 4 Plug Wire Entry: 180° Contact Mating Finish: Tin Part Status: Active Current - UL: 8 A Voltage - IEC: 160 V Voltage - UL: 300 V |
auf Bestellung 187 Stücke: Lieferzeit 21-28 Tag (e) |
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XW4N-04D2-A | Omron Electronics Inc-EMC Div |
Description: SOCKET,DOUBLE-ROW,,GOLD, Features: Lever Actuated Packaging: Tray Color: Black Mounting Type: Free Hanging (In-Line) Number of Positions: 4 Pitch: 0.138" (3.50mm) Type: Plug, Female Sockets Operating Temperature: -40°C ~ 100°C Termination Style: Screwless - Leg Spring, Push-In Spring Current - IEC: 8A Number of Levels: 2 Wire Gauge or Range - AWG: 16-24 AWG Wire Gauge or Range - mm²: 0.2-1.5mm² Positions Per Level: 2 Plug Wire Entry: 180° Contact Mating Finish: Gold Part Status: Active Current - UL: 8 A Voltage - IEC: 160 V Voltage - UL: 300 V |
auf Bestellung 115 Stücke: Lieferzeit 21-28 Tag (e) |
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A850491714N04A |
Hersteller: Amphenol Interconnect India
Description: CONN BACKSH W/CLMP SZ14 15 SIL
Packaging: Bag
Features: Clamp Screws
Color: Silver
Material: Aluminum Alloy
Shielding: Shielded
Type: Backshell, Cable Clamp
Shell Size - Insert: 14, 15
Cable Exit: 180°
Ingress Protection: Environment Resistant
Plating: Electroless Nickel
Cable Opening: 0.380" ~ 0.500" (9.65mm ~ 12.70mm)
Part Status: Active
Primary Material: Metal
Description: CONN BACKSH W/CLMP SZ14 15 SIL
Packaging: Bag
Features: Clamp Screws
Color: Silver
Material: Aluminum Alloy
Shielding: Shielded
Type: Backshell, Cable Clamp
Shell Size - Insert: 14, 15
Cable Exit: 180°
Ingress Protection: Environment Resistant
Plating: Electroless Nickel
Cable Opening: 0.380" ~ 0.500" (9.65mm ~ 12.70mm)
Part Status: Active
Primary Material: Metal
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 133.43 EUR |
10+ | 122.45 EUR |
25+ | 117.74 EUR |
BSC014N04LS |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
auf Bestellung 32 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.16 EUR |
16+ | 3.46 EUR |
100+ | 2.76 EUR |
250+ | 2.54 EUR |
500+ | 2.3 EUR |
1000+ | 2.05 EUR |
5000+ | 1.81 EUR |
BSC014N04LSATMA1 |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
auf Bestellung 975 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.16 EUR |
16+ | 3.46 EUR |
100+ | 2.76 EUR |
250+ | 2.68 EUR |
500+ | 2.3 EUR |
1000+ | 1.87 EUR |
BSC014N04LSATMA1 |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 32A 8-Pin TDSON EP T/R
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)BSC014N04LSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Description: MOSFET N-CH 40V 32/100A SUPERSO8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
auf Bestellung 4874 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.13 EUR |
10+ | 3.42 EUR |
100+ | 2.72 EUR |
500+ | 2.3 EUR |
1000+ | 1.96 EUR |
2000+ | 1.86 EUR |
BSC014N04LSI |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
auf Bestellung 30585 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.15 EUR |
10+ | 6.03 EUR |
25+ | 5.69 EUR |
100+ | 4.86 EUR |
250+ | 4.6 EUR |
500+ | 4.32 EUR |
1000+ | 3.69 EUR |
BSC014N04LSI |
Hersteller: Infineon Technologies
N-канальний ПТ; Udss, В = 40; Id = 100 А; Ciss, пФ @ Uds, В = 4000 @ 20; Qg, нКл = 55 @ 10 В; Rds = 1,45 мОм @ 50 A, 10 В; Ugs(th) = 2 В @ 250 мкА; Р, Вт = 2,5; 96; Тексп, °C = -55...+150; Тип монт. = smd; TDSON-8 FL
N-канальний ПТ; Udss, В = 40; Id = 100 А; Ciss, пФ @ Uds, В = 4000 @ 20; Qg, нКл = 55 @ 10 В; Rds = 1,45 мОм @ 50 A, 10 В; Ugs(th) = 2 В @ 250 мкА; Р, Вт = 2,5; 96; Тексп, °C = -55...+150; Тип монт. = smd; TDSON-8 FL
auf Bestellung 1596 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 1.98 EUR |
10+ | 1.71 EUR |
100+ | 1.5 EUR |
BSC014N04LSIATMA1 |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS
auf Bestellung 100859 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.1 EUR |
10+ | 5.95 EUR |
25+ | 5.9 EUR |
100+ | 4.78 EUR |
250+ | 4.73 EUR |
500+ | 4.21 EUR |
1000+ | 3.48 EUR |
BSC014N04LSIATMA1 |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 31A 8-Pin TDSON EP T/R
auf Bestellung 3765 Stücke:
Lieferzeit 14-21 Tag (e)BSC014N04LSIATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 72091 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.1 EUR |
10+ | 5.96 EUR |
100+ | 4.82 EUR |
500+ | 4.29 EUR |
1000+ | 3.67 EUR |
2000+ | 3.46 EUR |
BSC014N04LSIATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
Description: MOSFET N-CH 40V 31A/100A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 20 V
auf Bestellung 70000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 3.31 EUR |
BSC014N04LSTATMA1 |
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 1987 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.21 EUR |
15+ | 3.54 EUR |
100+ | 2.86 EUR |
500+ | 2.42 EUR |
1000+ | 1.97 EUR |
2500+ | 1.94 EUR |
5000+ | 1.92 EUR |
BSC014N04LSTATMA1 |
Hersteller: Infineon Technologies
Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R
Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)BSC014N04LSTATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
Description: MOSFET N-CH 40V 33A/100A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3W (Ta), 115W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TDSON-8 FL
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6020 pF @ 20 V
auf Bestellung 3860 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.37 EUR |
10+ | 3.63 EUR |
100+ | 2.89 EUR |
500+ | 2.45 EUR |
1000+ | 2.08 EUR |
2000+ | 1.97 EUR |
BSC054N04NS G |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
auf Bestellung 134246 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 2.32 EUR |
28+ | 1.89 EUR |
100+ | 1.47 EUR |
500+ | 1.25 EUR |
1000+ | 1.02 EUR |
2500+ | 0.99 EUR |
BSC054N04NSGATMA1 |
Hersteller: Infineon Technologies
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
MOSFET N-Ch 40V 81A TDSON-8 OptiMOS 3
auf Bestellung 56800 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 1.6 EUR |
39+ | 1.36 EUR |
100+ | 1.14 EUR |
500+ | 1.02 EUR |
1000+ | 0.9 EUR |
BSC054N04NSGATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
auf Bestellung 30381 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.31 EUR |
14+ | 1.88 EUR |
100+ | 1.46 EUR |
500+ | 1.24 EUR |
1000+ | 1.01 EUR |
2000+ | 0.95 EUR |
BSC054N04NSGATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
Description: MOSFET N-CH 40V 17A/81A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 81A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 4V @ 27µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 20 V
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.9 EUR |
10000+ | 0.86 EUR |
BSZ024N04LS6ATMA1 |
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 9855 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.93 EUR |
17+ | 3.15 EUR |
100+ | 2.59 EUR |
250+ | 2.4 EUR |
500+ | 2.18 EUR |
1000+ | 1.87 EUR |
2500+ | 1.78 EUR |
BSZ024N04LS6ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 24A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 24A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 89266 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.11 EUR |
10+ | 3.72 EUR |
25+ | 3.32 EUR |
100+ | 2.99 EUR |
250+ | 2.66 EUR |
500+ | 2.32 EUR |
1000+ | 1.93 EUR |
BSZ024N04LS6ATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 24A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Description: MOSFET N-CH 40V 24A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
auf Bestellung 85000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.73 EUR |
10000+ | 1.66 EUR |
BSZ034N04LS |
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 93 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.68 EUR |
24+ | 2.22 EUR |
100+ | 1.73 EUR |
500+ | 1.46 EUR |
1000+ | 1.19 EUR |
2500+ | 1.12 EUR |
5000+ | 1.07 EUR |
BSZ034N04LSATMA1 |
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 49 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 2.78 EUR |
23+ | 2.27 EUR |
100+ | 1.73 EUR |
500+ | 1.47 EUR |
1000+ | 1.16 EUR |
5000+ | 1.13 EUR |
BSZ034N04LSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 1.06 EUR |
10000+ | 1.01 EUR |
BSZ034N04LSATMA1 |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 19A/40A TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8-FL
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 20195 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.68 EUR |
12+ | 2.21 EUR |
100+ | 1.72 EUR |
500+ | 1.46 EUR |
1000+ | 1.19 EUR |
2000+ | 1.12 EUR |
CS1000M-24N-04A |
Hersteller: EXCELSYS / Advanced Energy
Description: AC/DC CONVERTER 24V 1000W
Power (Watts): 1000W
Features: Adjustable Output, PFC, PMBus™, Remote Sense, Universal Input
Packaging: Bulk
Size / Dimension: 10.30" L x 5.00" W x 1.54" H (261.6mm x 127.0mm x 39.1mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -40°C ~ 85°C (With Derating)
Applications: ITE (Commercial), Medical
Approval Agency: CSA, EN, IEC, UL
Efficiency: 94%
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1; 62368-1
Current - Output 1: 41.6 A
Description: AC/DC CONVERTER 24V 1000W
Power (Watts): 1000W
Features: Adjustable Output, PFC, PMBus™, Remote Sense, Universal Input
Packaging: Bulk
Size / Dimension: 10.30" L x 5.00" W x 1.54" H (261.6mm x 127.0mm x 39.1mm)
Mounting Type: Chassis Mount
Voltage - Input: 85 ~ 264 VAC
Type: Enclosed
Operating Temperature: -40°C ~ 85°C (With Derating)
Applications: ITE (Commercial), Medical
Approval Agency: CSA, EN, IEC, UL
Efficiency: 94%
Voltage - Output 1: 24V
Part Status: Active
Number of Outputs: 1
Voltage - Isolation: 4 kV
Standard Number: 60601-1; 62368-1
Current - Output 1: 41.6 A
auf Bestellung 25 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1731.29 EUR |
10+ | 1619.59 EUR |
DCP4N047006ID2KSC9 |
Hersteller: WIMA
Film Capacitors DC-LINK MKP 4 7.0 F 900 VDC 17x34.5x31.5 PCM27.5
Film Capacitors DC-LINK MKP 4 7.0 F 900 VDC 17x34.5x31.5 PCM27.5
auf Bestellung 128 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 10.24 EUR |
10+ | 7.9 EUR |
100+ | 7.38 EUR |
198+ | 6.11 EUR |
594+ | 4.78 EUR |
DCP4N047006ID2KSC9 |
Hersteller: WIMA
Description: CAP FILM 7UF 10% 900VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 900V
Height - Seated (Max): 1.358" (34.50mm)
Part Status: Active
Capacitance: 7 µF
ESR (Equivalent Series Resistance): 13 mOhms
Size / Dimension: 1.240" L x 0.669" W (31.50mm x 17.00mm)
Description: CAP FILM 7UF 10% 900VDC RAD
Packaging: Bulk
Tolerance: ±10%
Package / Case: Radial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 105°C
Applications: Automotive; DC Link, DC Filtering
Lead Spacing: 1.083" (27.50mm)
Termination: PC Pins
Ratings: AEC-Q200
Dielectric Material: Polypropylene (PP), Metallized
Voltage Rating - DC: 900V
Height - Seated (Max): 1.358" (34.50mm)
Part Status: Active
Capacitance: 7 µF
ESR (Equivalent Series Resistance): 13 mOhms
Size / Dimension: 1.240" L x 0.669" W (31.50mm x 17.00mm)
auf Bestellung 44 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.41 EUR |
10+ | 7.23 EUR |
FDB024N04AL7 |
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263-7
Packaging: Bulk
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
auf Bestellung 33049 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
105+ | 6.89 EUR |
IPB014N04NF2SATMA1 |
Hersteller: Infineon Technologies
MOSFET TRENCH <= 40V
MOSFET TRENCH <= 40V
auf Bestellung 289 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 4.34 EUR |
15+ | 3.64 EUR |
100+ | 2.89 EUR |
250+ | 2.65 EUR |
500+ | 2.41 EUR |
800+ | 2.06 EUR |
2400+ | 1.96 EUR |
IPB014N04NF2SATMA1 |
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
Description: TRENCH <= 40V
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 191A (Tc)
Rds On (Max) @ Id, Vgs: 1.45mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 188W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 126µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 20 V
auf Bestellung 616 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.32 EUR |
10+ | 3.58 EUR |
100+ | 2.85 EUR |
M85049/1714N04 |
Hersteller: Glenair
Circular MIL Spec Backshells STRAIGHT BACKSHELL
Circular MIL Spec Backshells STRAIGHT BACKSHELL
auf Bestellung 7 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1542.09 EUR |
2+ | 1344.75 EUR |
5+ | 1292.38 EUR |
10+ | 926.02 EUR |
25+ | 834.6 EUR |
M85049/1714N04A |
Hersteller: Amphenol Pcd
Circular MIL Spec Backshells 17 Backshell Env-EMI/RFI
Circular MIL Spec Backshells 17 Backshell Env-EMI/RFI
auf Bestellung 3 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 134.37 EUR |
10+ | 123.32 EUR |
25+ | 118.59 EUR |
50+ | 114.61 EUR |
100+ | 108.29 EUR |
250+ | 105.14 EUR |
500+ | 102.75 EUR |
M85049/2914N04 |
Hersteller: Glenair
Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04
Circular MIL Spec Backshells NON ENV STRN RLF BS SH SZ 14 CLMP SZ 04
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1281.38 EUR |
2+ | 1117.45 EUR |
5+ | 1073.96 EUR |
10+ | 769.5 EUR |
25+ | 693.5 EUR |
M85049/2914N04 |
Hersteller: Amphenol Pcd
Circular MIL Spec Backshells 29 Backshell Non Env
Circular MIL Spec Backshells 29 Backshell Non Env
auf Bestellung 18 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 82.78 EUR |
10+ | 72.51 EUR |
25+ | 69.34 EUR |
50+ | 68.15 EUR |
100+ | 66.87 EUR |
250+ | 64.9 EUR |
500+ | 63.91 EUR |
M85049/3614N04 |
Hersteller: Amphenol Pcd
Circular MIL Spec Backshells 36 Backshell Non Env-EMI/RFI
Circular MIL Spec Backshells 36 Backshell Non Env-EMI/RFI
auf Bestellung 19 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 99.84 EUR |
10+ | 97.66 EUR |
25+ | 95.11 EUR |
50+ | 95.08 EUR |
100+ | 89 EUR |
M85049/3614N04 |
Hersteller: Glenair
Circular MIL Spec Backshells Backshell
Circular MIL Spec Backshells Backshell
auf Bestellung 10 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1218.62 EUR |
2+ | 1015.66 EUR |
5+ | 1013.84 EUR |
10+ | 749.27 EUR |
25+ | 749.22 EUR |
M85049/3614N04A |
Hersteller: Glenair
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ14 CLMP SZ04 NI
Circular MIL Spec Backshells EMI/RFI NON ENV SHLL SZ14 CLMP SZ04 NI
auf Bestellung 4 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1384.32 EUR |
2+ | 1207.21 EUR |
5+ | 1160.2 EUR |
10+ | 831.3 EUR |
25+ | 749.22 EUR |
NP74N04YUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.99 EUR |
5000+ | 1.92 EUR |
NP74N04YUG-E1-AY |
Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
Description: MOSFET N-CH 40V 75A 8HSON
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 37.5A, 10V
Power Dissipation (Max): 1W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HSON
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 96 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5430 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)NTMFS0D4N04XMT1G |
Hersteller: onsemi
MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE
MOSFET 40V T10M IN S08FL HEFET GEN 2 PACKAGE
auf Bestellung 1500 Stücke:
Lieferzeit 259-273 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 6.73 EUR |
10+ | 5.67 EUR |
25+ | 5.33 EUR |
100+ | 4.58 EUR |
250+ | 4.32 EUR |
500+ | 4.06 EUR |
1000+ | 3.3 EUR |
NTMTS0D4N04CLTXG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 79.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Description: MOSFET N-CH 40V 79.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 341 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
auf Bestellung 1419 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.53 EUR |
10+ | 12.2 EUR |
100+ | 9.87 EUR |
500+ | 8.77 EUR |
1000+ | 7.51 EUR |
NTMTS0D4N04CTXG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)NTMTS0D4N04CTXG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V
Description: MOSFET N-CH 40V 79.8A/558A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79.8A (Ta), 558A (Tc)
Rds On (Max) @ Id, Vgs: 0.45mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 244W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 251 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16500 pF @ 20 V
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.11 EUR |
10+ | 12.69 EUR |
100+ | 10.27 EUR |
500+ | 9.13 EUR |
1000+ | 7.81 EUR |
NTMYS2D4N04CTWG |
Hersteller: onsemi
MOSFET 40V 140A 2.3Ohm Single N-Channel
MOSFET 40V 140A 2.3Ohm Single N-Channel
auf Bestellung 2935 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 8.53 EUR |
10+ | 7.18 EUR |
25+ | 6.76 EUR |
100+ | 5.8 EUR |
250+ | 5.49 EUR |
500+ | 5.17 EUR |
1000+ | 4.42 EUR |
NTMYS2D4N04CTWG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET N-CH 40V 30A/138A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 2850 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.51 EUR |
10+ | 4.59 EUR |
100+ | 3.65 EUR |
500+ | 3.09 EUR |
1000+ | 2.62 EUR |
NTTFS004N04CTAG |
Hersteller: onsemi
MOSFET Single N-Chn Pwr Mosfet 40V
MOSFET Single N-Chn Pwr Mosfet 40V
auf Bestellung 4500 Stücke:
Lieferzeit 126-140 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.46 EUR |
19+ | 2.86 EUR |
100+ | 2.2 EUR |
500+ | 1.87 EUR |
1000+ | 1.52 EUR |
1500+ | 1.43 EUR |
NVMFWS0D4N04XMT1G |
Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 11.47 EUR |
10+ | 9.64 EUR |
100+ | 7.8 EUR |
500+ | 6.93 EUR |
NVMFWS0D4N04XMT1G |
Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1500+ | 5.94 EUR |
3000+ | 5.59 EUR |
NVMFWS0D4N04XMT1G |
Hersteller: onsemi
MOSFET 40V T10M IN S08FL GEN 2 PACKAGE
MOSFET 40V T10M IN S08FL GEN 2 PACKAGE
auf Bestellung 1370 Stücke:
Lieferzeit 259-273 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 11.57 EUR |
10+ | 9.72 EUR |
25+ | 9.15 EUR |
100+ | 7.85 EUR |
250+ | 7.44 EUR |
500+ | 6.99 EUR |
1000+ | 5.69 EUR |
NVMTS0D4N04CLTXG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 553.8A 8DFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 553.8A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 20600 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 102 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 24.67 EUR |
10+ | 21.16 EUR |
100+ | 17.63 EUR |
NVMYS2D4N04CTWG |
Hersteller: onsemi
MOSFET Power Mosfet 40V 2.4ohm 130A
MOSFET Power Mosfet 40V 2.4ohm 130A
auf Bestellung 3000 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
14+ | 3.72 EUR |
18+ | 3.04 EUR |
100+ | 2.37 EUR |
500+ | 2 EUR |
1000+ | 1.63 EUR |
3000+ | 1.54 EUR |
6000+ | 1.46 EUR |
NVMYS2D4N04CTWG |
Hersteller: onsemi
Description: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.69 EUR |
10+ | 3.02 EUR |
100+ | 2.35 EUR |
500+ | 1.99 EUR |
1000+ | 1.62 EUR |
NVTFS004N04CTAG |
Hersteller: onsemi
MOSFET Single N-Chn Pwr Mosfet 40V
MOSFET Single N-Chn Pwr Mosfet 40V
auf Bestellung 1500 Stücke:
Lieferzeit 126-140 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 3.43 EUR |
19+ | 2.83 EUR |
100+ | 2.19 EUR |
500+ | 1.86 EUR |
1500+ | 1.51 EUR |
NVTYS004N04CLTWG |
Hersteller: onsemi
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: T6 40V N-CH LL IN LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2949 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.52 EUR |
13+ | 2.06 EUR |
100+ | 1.6 EUR |
500+ | 1.36 EUR |
1000+ | 1.11 EUR |
WA 14N0470k |
Hersteller: MYG
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k
Anzahl je Verpackung: 100 Stücke
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k
Anzahl je Verpackung: 100 Stücke
auf Bestellung 79 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
100+ | 0.3 EUR |
WA 14N0470k |
Hersteller: BOCHEN
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k
Anzahl je Verpackung: 100 Stücke
Varistor voltage: 470V; operating voltage: 300VAC; 385VDC; power: 1W; tolerance: 10%; maximum energy: 1/100us - 118.0J Varistor JVR-14N 471K WA 14N0470k
Anzahl je Verpackung: 100 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
200+ | 0.27 EUR |
XW4N-04D1-A |
Hersteller: Omron Electronics Inc-EMC Div
Description: SOCKET,SINGLE-ROW,,GOLD,
Packaging: Tray
Features: Lever Actuated
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 1
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 4
Plug Wire Entry: 180°
Contact Mating Finish: Gold
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
Description: SOCKET,SINGLE-ROW,,GOLD,
Packaging: Tray
Features: Lever Actuated
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 1
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 4
Plug Wire Entry: 180°
Contact Mating Finish: Gold
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
auf Bestellung 93 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 24.6 EUR |
10+ | 22.15 EUR |
25+ | 20.86 EUR |
40+ | 20.33 EUR |
XW4N-04D1-S |
Hersteller: Omron Electronics Inc-EMC Div
Description: SOCKET,SINGLE-ROW,,TIN REFLOW,
Packaging: Tray
Features: Lever Actuated
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 1
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 4
Plug Wire Entry: 180°
Contact Mating Finish: Tin
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
Description: SOCKET,SINGLE-ROW,,TIN REFLOW,
Packaging: Tray
Features: Lever Actuated
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 1
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 4
Plug Wire Entry: 180°
Contact Mating Finish: Tin
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
auf Bestellung 187 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 23.87 EUR |
10+ | 21.49 EUR |
25+ | 20.24 EUR |
40+ | 19.72 EUR |
130+ | 19.2 EUR |
XW4N-04D2-A |
Hersteller: Omron Electronics Inc-EMC Div
Description: SOCKET,DOUBLE-ROW,,GOLD,
Features: Lever Actuated
Packaging: Tray
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 2
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 2
Plug Wire Entry: 180°
Contact Mating Finish: Gold
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
Description: SOCKET,DOUBLE-ROW,,GOLD,
Features: Lever Actuated
Packaging: Tray
Color: Black
Mounting Type: Free Hanging (In-Line)
Number of Positions: 4
Pitch: 0.138" (3.50mm)
Type: Plug, Female Sockets
Operating Temperature: -40°C ~ 100°C
Termination Style: Screwless - Leg Spring, Push-In Spring
Current - IEC: 8A
Number of Levels: 2
Wire Gauge or Range - AWG: 16-24 AWG
Wire Gauge or Range - mm²: 0.2-1.5mm²
Positions Per Level: 2
Plug Wire Entry: 180°
Contact Mating Finish: Gold
Part Status: Active
Current - UL: 8 A
Voltage - IEC: 160 V
Voltage - UL: 300 V
auf Bestellung 115 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 26.88 EUR |
10+ | 24.2 EUR |
25+ | 22.79 EUR |
40+ | 22.21 EUR |
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