Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 112A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 112A
Pulsed drain current: 480A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ H6; unipolar; 30V; 112A; Idm: 480A
Type of transistor: N-MOSFET
Technology: STripFET™ H6
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 112A
Pulsed drain current: 480A
Power dissipation: 136W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: THT
Gate charge: 42nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 30V 120A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
MOSFET N-channel 30 V, 2.5 mOhm typ 120 A, STripFET H6 Power MOSFET

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 120A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 60A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V

Transistoren > MOSFET N-CH

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AIR CONDIT 2500BTU 460V LG

Hersteller: Hammond Manufacturing
Description: AIR CONDITIONER 2500 BTU 460V
Packaging: Bulk
Voltage - Input: 460VAC
Type: Air Conditioning Unit
Size / Dimension: 11.94" L x 10.27" W x 22.97" H (303.3mm x 260.9mm x 583.4mm)
Specifications: A/C Unit, 2600 BTU

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AIR CONDIT LG

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AC UNIT 5-7,000BTU/H 460V

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AIR CONDIT LG

Hersteller: Hammond Manufacturing
Description: AIR CONDITIONER 3R 460V LG
Packaging: Bulk
Size / Dimension: 15.55" L x 12.77" W x 47.61" H (395.0mm x 324.4mm x 1209.3mm)
Voltage - Input: 460VAC
Type: Air Conditioning Unit
Specifications: A/C Unit, 6825 BTU

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AC UNIT 9-12,000BTU/H 460V

Hersteller: Hammond Manufacturing
Description: AIR CONDITIONER 9-12,000 BTU 460
Packaging: Bulk
Voltage - Input: 460VAC
Type: Air Conditioning Unit
Size / Dimension: 16.00" L x 14.38" W x 53.13" H (406.4mm x 365.3mm x 1349.5mm)

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AC UNIT 12-20000BTU 460V N3R/4

Hersteller: Hammond Manufacturing
Racks & Rack Cabinet Accessories AC UNIT 12-25000BTU-460V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 48A 3-Pin(2+Tab) DPAK T/R

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 240A 8-Pin Power Flat T/R

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 240A 8-Pin Power Flat T/R

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 160A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 17.5A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 260A 8-Pin Power Flat EP T/R

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 260A 8-Pin Power Flat EP T/R

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 260A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 22.5A, 10V
Power Dissipation (Max): 166W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 61.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6375 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 60A 8-Pin Power Flat T/R

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 60A 8-Pin Power Flat T/R

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A POWERFLAT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 8.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 60A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.1mOhm @ 8.5A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerFlat™ (5x6)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±22V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 30V 120A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) TO-220AB Tube

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 48A 3-Pin(3+Tab) IPAK Tube

Hersteller: STMicroelectronics
Description: MOSFET N-CH 30V 48A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 24A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: IPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V

Hersteller: STMicroelectronics
Trans MOSFET N-CH 30V 32A/60A 8-Pin Power Flat T/R