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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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STP60NF06 Produktcode: 2993 |
ST |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 60 Idd,A: 60 Rds(on), Ohm: 0.014 Ciss, pF/Qg, nC: 1800/49 JHGF: THT ZCODE: 8541290010 |
auf Bestellung 686 Stück: Lieferzeit 21-28 Tag (e)erwartet 10 Stück: |
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STP60NF06L Produktcode: 105102 |
ST |
Transistoren > MOSFET N-CH Uds,V: 60 V Idd,A: 60 A Rds(on), Ohm: 0,012 Ohm Ciss, pF/Qg, nC: 2000/35 JHGF: THT ZCODE: 8541290010 |
auf Bestellung 90 Stück: Lieferzeit 21-28 Tag (e) |
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60NF06 | IR | 09+ |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06LT4 | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 5941 Stücke: Lieferzeit 14-28 Tag (e) |
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STB60NF06LT4 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 696 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06LT4 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 696 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 536 Stücke: Lieferzeit 14-21 Tag (e) |
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STB60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 536 Stücke: Lieferzeit 7-14 Tag (e) |
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STB60NF06T4 | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 4716 Stücke: Lieferzeit 14-28 Tag (e) |
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STB60NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
auf Bestellung 1353 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06T4 | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 2427 Stücke: Lieferzeit 14-28 Tag (e) |
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STD60NF06T4 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
auf Bestellung 2238 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 586 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06 | ST |
N-MOSFET 60A 60V 150W 0.012Ω STP60NF06 TSTP60NF06 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 586 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06 | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 3544 Stücke: Lieferzeit 14-28 Tag (e) |
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STP60NF06 | STMicroelectronics | Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 1013 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06 | STMicroelectronics |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V |
auf Bestellung 844 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06FP | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 1935 Stücke: Lieferzeit 14-28 Tag (e) |
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STP60NF06FP | STMicroelectronics |
Description: MOSFET N-CH 60V 30A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06L | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±15V On-state resistance: 14mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 843 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06L | ST |
Transistor N-Channel MOSFET; 60V; 60V; 15V; 16mOhm; 60A; 110W; -65°C ~ 175°C; STP60NF06L TSTP60NF06L Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06L | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W Type of transistor: N-MOSFET Technology: STripFET™ II Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: TO220-3 Gate-source voltage: ±15V On-state resistance: 14mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 843 Stücke: Lieferzeit 7-14 Tag (e) |
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STP60NF06L | STMicroelectronics | Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 10062 Stücke: Lieferzeit 14-21 Tag (e) |
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STP60NF06L | STMicroelectronics | MOSFET N-Ch 60 Volt 60 Amp |
auf Bestellung 5819 Stücke: Lieferzeit 14-28 Tag (e) |
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STP60NF06L | STMicroelectronics |
Description: MOSFET N-CH 60V 60A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V, 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 628 Stücke: Lieferzeit 21-28 Tag (e) |
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P60NF06 | ST | 09+ |
auf Bestellung 1018 Stücke: Lieferzeit 21-28 Tag (e) |
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P60NF06FP |
auf Bestellung 506 Stücke: Lieferzeit 21-28 Tag (e) |
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P60NF06L | ST | TO220 03+ |
auf Bestellung 44 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06 | ST | 07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06 | ST | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06L | ST | 07+ TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06L | ST | TO-263/D2-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STB60NF06LT4G |
auf Bestellung 790 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06 | STM | SOT-252 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06 | ST | TO-252/D-PAK |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06-T4 |
auf Bestellung 10080 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06-TR |
auf Bestellung 68500 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06LT4 |
auf Bestellung 3500 Stücke: Lieferzeit 21-28 Tag (e) |
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STD60NF06T |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06 |
auf Bestellung 1 Stücke: Lieferzeit 7-21 Tag (e) |
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STP60NF06(MOR) |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06-E-P | ST | 08+; |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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STP60NF06LFP |
auf Bestellung 98000 Stücke: Lieferzeit 21-28 Tag (e) |
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STPS60NF06 |
auf Bestellung 37 Stücke: Lieferzeit 21-28 Tag (e) |
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Транзистор польовий STP60NF06 60A 60V N-ch TO-220 |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE2996 | NTE Electronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 59A Pulsed drain current: 330A Power dissipation: 200W Case: TO220 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Kind of channel: enhanced |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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STB60NF06LT4 Produktcode: 62112 |
ST |
Transistoren > MOSFET N-CH Gehäuse: D2Pak Uds,V: 60 Idd,A: 60 Rds(on), Ohm: 0.014 Ciss, pF/Qg, nC: 2000/35 JHGF: SMD |
Produkt ist nicht verfügbar
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STD60NF06T4 Produktcode: 165661 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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360MA060NF0603 | Glenair | Circular MIL Spec Backshells COMMERCIAL |
Produkt ist nicht verfügbar |
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STB60NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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STB60NF06LT4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: D2PAK Gate-source voltage: ±15V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STB60NF06LT4 | STMicroelectronics | Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB60NF06T4 | STMicroelectronics | Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STB60NF06T4 | STMicroelectronics | Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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STD60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
Produkt ist nicht verfügbar |
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STD60NF06T4 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 42A Power dissipation: 110W Case: DPAK Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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STD60NF06T4 | STMicroelectronics | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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STD60NF06T4 | STMicroelectronics | Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
STP60NF06 Produktcode: 2993 |
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 1800/49
JHGF: THT
ZCODE: 8541290010
auf Bestellung 686 Stück:
Lieferzeit 21-28 Tag (e)erwartet 10 Stück:
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.7 EUR |
10+ | 0.67 EUR |
STP60NF06L Produktcode: 105102 |
Hersteller: ST
Transistoren > MOSFET N-CH
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Uds,V: 60 V
Idd,A: 60 A
Rds(on), Ohm: 0,012 Ohm
Ciss, pF/Qg, nC: 2000/35
JHGF: THT
ZCODE: 8541290010
auf Bestellung 90 Stück:
Lieferzeit 21-28 Tag (e)STB60NF06LT4 |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 5941 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 4.86 EUR |
13+ | 4.06 EUR |
100+ | 3.25 EUR |
250+ | 3.22 EUR |
500+ | 2.73 EUR |
1000+ | 2.31 EUR |
2000+ | 2.24 EUR |
STB60NF06LT4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 696 Stücke:
Lieferzeit 21-28 Tag (e)STB60NF06LT4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 696 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.84 EUR |
10+ | 4.02 EUR |
100+ | 3.2 EUR |
500+ | 2.7 EUR |
STB60NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 536 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
39+ | 1.84 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
STB60NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 536 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 2.09 EUR |
39+ | 1.84 EUR |
48+ | 1.52 EUR |
50+ | 1.43 EUR |
STB60NF06T4 |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 4716 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.11 EUR |
15+ | 3.56 EUR |
100+ | 2.99 EUR |
250+ | 2.91 EUR |
500+ | 2.38 EUR |
1000+ | 2.24 EUR |
2000+ | 2.16 EUR |
STB60NF06T4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.34 EUR |
STB60NF06T4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 60V 60A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
auf Bestellung 1353 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.91 EUR |
10+ | 4.09 EUR |
100+ | 3.25 EUR |
500+ | 2.75 EUR |
STD60NF06T4 |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 2427 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 4.84 EUR |
14+ | 3.9 EUR |
100+ | 3.12 EUR |
250+ | 2.91 EUR |
500+ | 2.47 EUR |
1000+ | 2.18 EUR |
2500+ | 2.12 EUR |
STD60NF06T4 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 60V 60A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
auf Bestellung 2238 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.81 EUR |
10+ | 4 EUR |
100+ | 3.18 EUR |
500+ | 2.69 EUR |
1000+ | 2.28 EUR |
STP60NF06 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 586 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.57 EUR |
69+ | 1.04 EUR |
77+ | 0.94 EUR |
100+ | 0.72 EUR |
106+ | 0.68 EUR |
STP60NF06 |
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.87 EUR |
STP60NF06 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 586 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 1.57 EUR |
69+ | 1.04 EUR |
77+ | 0.94 EUR |
100+ | 0.72 EUR |
106+ | 0.68 EUR |
STP60NF06 |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 3544 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 2.39 EUR |
26+ | 2.04 EUR |
100+ | 1.79 EUR |
STP60NF06 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 1013 Stücke:
Lieferzeit 14-21 Tag (e)STP60NF06 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1660 pF @ 25 V
auf Bestellung 844 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.08 EUR |
50+ | 3.28 EUR |
100+ | 2.7 EUR |
500+ | 2.28 EUR |
STP60NF06FP |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 1935 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 4.08 EUR |
22+ | 2.44 EUR |
100+ | 1.87 EUR |
250+ | 1.81 EUR |
500+ | 1.78 EUR |
STP60NF06FP |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
Description: MOSFET N-CH 60V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 30A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.06 EUR |
50+ | 3.26 EUR |
100+ | 2.68 EUR |
500+ | 2.27 EUR |
1000+ | 1.92 EUR |
STP60NF06L |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 843 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.63 EUR |
65+ | 1.11 EUR |
81+ | 0.89 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
STP60NF06L |
Hersteller: ST
Transistor N-Channel MOSFET; 60V; 60V; 15V; 16mOhm; 60A; 110W; -65°C ~ 175°C; STP60NF06L TSTP60NF06L
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 60V; 60V; 15V; 16mOhm; 60A; 110W; -65°C ~ 175°C; STP60NF06L TSTP60NF06L
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.88 EUR |
STP60NF06L |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 60V; 42A; 110W
Type of transistor: N-MOSFET
Technology: STripFET™ II
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: TO220-3
Gate-source voltage: ±15V
On-state resistance: 14mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 843 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
44+ | 1.63 EUR |
65+ | 1.11 EUR |
81+ | 0.89 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
STP60NF06L |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 10062 Stücke:
Lieferzeit 14-21 Tag (e)STP60NF06L |
Hersteller: STMicroelectronics
MOSFET N-Ch 60 Volt 60 Amp
MOSFET N-Ch 60 Volt 60 Amp
auf Bestellung 5819 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 4.86 EUR |
14+ | 3.95 EUR |
100+ | 3.17 EUR |
250+ | 3.04 EUR |
500+ | 2.65 EUR |
1000+ | 2.44 EUR |
2000+ | 2.3 EUR |
STP60NF06L |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 60V 60A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 30A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 628 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.97 EUR |
50+ | 3.98 EUR |
100+ | 3.28 EUR |
500+ | 2.77 EUR |
NTE2996 |
Hersteller: NTE Electronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 330A; 200W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 59A
Pulsed drain current: 330A
Power dissipation: 200W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Kind of channel: enhanced
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 4.46 EUR |
STB60NF06LT4 Produktcode: 62112 |
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 2000/35
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 60
Idd,A: 60
Rds(on), Ohm: 0.014
Ciss, pF/Qg, nC: 2000/35
JHGF: SMD
Produkt ist nicht verfügbar
360MA060NF0603 |
Hersteller: Glenair
Circular MIL Spec Backshells COMMERCIAL
Circular MIL Spec Backshells COMMERCIAL
Produkt ist nicht verfügbar
STB60NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
STB60NF06LT4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; D2PAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: D2PAK
Gate-source voltage: ±15V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STB60NF06LT4 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB60NF06T4 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STB60NF06T4 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH 60V 60A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
STD60NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
STD60NF06T4 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 42A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 42A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
STD60NF06T4 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
STD60NF06T4 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
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