Suchergebnisse für "80N60" : > 60

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FCD380N60E FCD380N60E onsemi fcd380n60e-d.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 4899 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.62 EUR
10+ 4.67 EUR
100+ 3.71 EUR
500+ 3.14 EUR
1000+ 2.67 EUR
Mindestbestellmenge: 5
FCD380N60E FCD380N60E onsemi fcd380n60e-d.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+2.53 EUR
Mindestbestellmenge: 2500
FCP380N60 FCP380N60 onsemi fcpf380n60-d.pdf Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 2301 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
1000+ 3.42 EUR
2000+ 3.22 EUR
Mindestbestellmenge: 4
FCP380N60E FCP380N60E Fairchild Semiconductor FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 25616 Stücke:
Lieferzeit 21-28 Tag (e)
213+3.39 EUR
Mindestbestellmenge: 213
FCPF380N60 FCPF380N60 Fairchild Semiconductor ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
204+3.55 EUR
Mindestbestellmenge: 204
FCPF380N60 FCPF380N60 onsemi fcpf380n60-d.pdf Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.55 EUR
50+ 5.19 EUR
100+ 4.45 EUR
Mindestbestellmenge: 4
FCPF380N60-F152 FCPF380N60-F152 Fairchild Semiconductor ONSM-S-A0003584263-1.pdf?t.download=true&u=5oefqw Description: 600V, N-CHANNEL, MOSFET, TO-220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 476 Stücke:
Lieferzeit 21-28 Tag (e)
313+2.3 EUR
Mindestbestellmenge: 313
FCPF380N60E FCPF380N60E onsemi ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.12 EUR
10+ 5.92 EUR
100+ 4.71 EUR
500+ 3.98 EUR
1000+ 3.38 EUR
2000+ 3.21 EUR
Mindestbestellmenge: 4
FGH80N60FD2TU FGH80N60FD2TU onsemi fgh80n60fd2-d.pdf Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 61 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/126ns
Switching Energy: 1mJ (on), 520µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 290 W
auf Bestellung 838 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.06 EUR
30+ 9.57 EUR
120+ 8.21 EUR
510+ 7.29 EUR
Mindestbestellmenge: 3
IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.76 EUR
Mindestbestellmenge: 5
IXFK80N60P3 IXFK80N60P3 IXYS IXFK(X)80N60P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
5+15.76 EUR
Mindestbestellmenge: 5
IXFK80N60P3 IXFK80N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 724 Stücke:
Lieferzeit 21-28 Tag (e)
1+42.9 EUR
25+ 34.74 EUR
100+ 32.7 EUR
500+ 29.63 EUR
IXFN80N60P3 IXFN80N60P3 IXYS IXFN80N60P3.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFN80N60P3 IXFN80N60P3 IXYS DS100356(IXFN80N60P3).pdf Description: MOSFET N-CH 600V 66A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 298 Stücke:
Lieferzeit 21-28 Tag (e)
1+88.63 EUR
10+ 78.76 EUR
100+ 68.89 EUR
IXFX80N60P3 IXFX80N60P3 IXYS littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n60p3_datasheet.pdf.pdf Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
1+42.61 EUR
30+ 34.49 EUR
120+ 32.46 EUR
PJMF280N60E1_T0_00001 PJMF280N60E1_T0_00001 Panjit International Inc. PJMF280N60E1.pdf Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V
auf Bestellung 1968 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.51 EUR
50+ 4.44 EUR
100+ 3.65 EUR
500+ 3.09 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 5
PJMF580N60E1_T0_00001 PJMF580N60E1_T0_00001 Panjit International Inc. PJMF580N60E1.pdf Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
auf Bestellung 1966 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.95 EUR
50+ 3.19 EUR
100+ 2.53 EUR
500+ 2.14 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
SGF80N60UFTU SGF80N60UFTU Fairchild Semiconductor FAIRS17768-1.pdf?t.download=true&u=5oefqw Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 110 W
auf Bestellung 26706 Stücke:
Lieferzeit 21-28 Tag (e)
59+12.36 EUR
Mindestbestellmenge: 59
SGF80N60UFTU-ON SGF80N60UFTU-ON onsemi FAIRS17768-1.pdf?t.download=true&u=5oefqw Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 2983 Stücke:
Lieferzeit 21-28 Tag (e)
59+12.36 EUR
Mindestbestellmenge: 59
SIHB080N60E-GE3 SIHB080N60E-GE3 Vishay Siliconix sihb080n60e.pdf Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 1732 Stücke:
Lieferzeit 21-28 Tag (e)
3+12.53 EUR
50+ 9.93 EUR
100+ 8.51 EUR
500+ 7.57 EUR
1000+ 6.48 EUR
Mindestbestellmenge: 3
SIHB180N60E-GE3 SIHB180N60E-GE3 Vishay sihb180n60e.pdf Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
SIHD180N60E-GE3 SIHD180N60E-GE3 Vishay Siliconix sihd180n60e.pdf Description: MOSFET N-CH 600V 19A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 100 V
auf Bestellung 2909 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 4
SIHF080N60E-GE3 SIHF080N60E-GE3 Vishay Siliconix sihf080n60e.pdf Description: E SERIES POWER MOSFET TO-220 FUL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 1660 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.06 EUR
50+ 7.97 EUR
100+ 6.84 EUR
500+ 6.08 EUR
1000+ 5.2 EUR
Mindestbestellmenge: 3
SIHG080N60E-GE3 Vishay sihg080n60e.pdf Trans MOSFET N-CH 600V 35A Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
SIHG080N60E-GE3 SIHG080N60E-GE3 Vishay Siliconix sihg080n60e.pdf Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 279 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.52 EUR
25+ 9.13 EUR
100+ 7.83 EUR
Mindestbestellmenge: 3
SIHG180N60E-GE3 SIHG180N60E-GE3 Vishay Siliconix sihg180n60e.pdf Description: MOSFET N-CH 600V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
auf Bestellung 329 Stücke:
Lieferzeit 21-28 Tag (e)
4+8.66 EUR
25+ 6.87 EUR
100+ 5.89 EUR
Mindestbestellmenge: 4
SIHG80N60EF-GE3 SIHG80N60EF-GE3 Vishay Siliconix sihg80n60ef.pdf Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 100 V
auf Bestellung 479 Stücke:
Lieferzeit 21-28 Tag (e)
1+36.09 EUR
25+ 29.21 EUR
100+ 27.5 EUR
SIHH080N60E-T1-GE3 SIHH080N60E-T1-GE3 Vishay Siliconix sihh080n60e.pdf Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 3107 Stücke:
Lieferzeit 21-28 Tag (e)
3+11.83 EUR
10+ 9.93 EUR
100+ 8.04 EUR
500+ 7.14 EUR
1000+ 6.12 EUR
Mindestbestellmenge: 3
SIHP080N60E-GE3 SIHP080N60E-GE3 Vishay Siliconix sihp080n60e.pdf Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 838 Stücke:
Lieferzeit 21-28 Tag (e)
3+10.17 EUR
50+ 8.04 EUR
100+ 6.89 EUR
500+ 6.13 EUR
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STP80N600K6 STMicroelectronics stp80n600k6.pdf Description: N-CHANNEL 800 V, 515 MOHM TYP.,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
5+5.85 EUR
Mindestbestellmenge: 5
WMJ80N60C4 WMJ80N60C4 WAYON WMJ80N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.91 EUR
12+ 6.13 EUR
Mindestbestellmenge: 5
WMJ80N60C4 WMJ80N60C4 WAYON WMJ80N60C4.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.91 EUR
12+ 6.13 EUR
Mindestbestellmenge: 5
FCP380N60E ON Semiconductor FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
auf Bestellung 730 Stücke:
Lieferzeit 21-28 Tag (e)
G80N60 FSC
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
G80N60UF
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
IXFN80N60P3 DS100356(IXFN80N60P3).pdf
auf Bestellung 16500 Stücke:
Lieferzeit 18-25 Tag (e)
SGF80N60UF
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU FAIRS17768-1.pdf?t.download=true&u=5oefqw
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU===Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU==Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU==FSC
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60RUFD
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UF
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD FAIRCHILD
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD FSC
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD===FSC
auf Bestellung 14500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD=FSC
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDT==FSC
auf Bestellung 14500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDTU=
auf Bestellung 450 Stücke:
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SGH80N60UFDTU===Fairchild
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDTU=FSC
auf Bestellung 14500 Stücke:
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SGH80N60UFTU SGH80N60UF.pdf
auf Bestellung 6030 Stücke:
Lieferzeit 21-28 Tag (e)
SPB80N60S2-08
auf Bestellung 180 Stücke:
Lieferzeit 21-28 Tag (e)
Транзистор польовий FCD380N60E 10.2A 600V N-ch DPAK
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
FGH80N60FD2TU(Transistor)
Produktcode: 61002 		Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
FGH80N60FDTU
Produktcode: 155558 		fgh80n60fd-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
G80N60
Produktcode: 77783 		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
G80N60UF
Produktcode: 86430 		Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
G80N60UFD(Transistor)
Produktcode: 100656 		Fairchild sgh80n60ufd.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO247AC
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 195 W
Produkt ist nicht verfügbar
FCD380N60E fcd380n60e-d.pdf
FCD380N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 4899 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.62 EUR
10+ 4.67 EUR
100+ 3.71 EUR
500+ 3.14 EUR
1000+ 2.67 EUR
Mindestbestellmenge: 5
FCD380N60E fcd380n60e-d.pdf
FCD380N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+2.53 EUR
Mindestbestellmenge: 2500
FCP380N60 fcpf380n60-d.pdf
FCP380N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 2301 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
1000+ 3.42 EUR
2000+ 3.22 EUR
Mindestbestellmenge: 4
FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw
FCP380N60E
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.2A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 25616 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
213+3.39 EUR
Mindestbestellmenge: 213
FCPF380N60 ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
FCPF380N60
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
204+3.55 EUR
Mindestbestellmenge: 204
FCPF380N60 fcpf380n60-d.pdf
FCPF380N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.55 EUR
50+ 5.19 EUR
100+ 4.45 EUR
Mindestbestellmenge: 4
FCPF380N60-F152 ONSM-S-A0003584263-1.pdf?t.download=true&u=5oefqw
FCPF380N60-F152
Hersteller: Fairchild Semiconductor
Description: 600V, N-CHANNEL, MOSFET, TO-220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 476 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
313+2.3 EUR
Mindestbestellmenge: 313
FCPF380N60E ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
FCPF380N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.12 EUR
10+ 5.92 EUR
100+ 4.71 EUR
500+ 3.98 EUR
1000+ 3.38 EUR
2000+ 3.21 EUR
Mindestbestellmenge: 4
FGH80N60FD2TU fgh80n60fd2-d.pdf
FGH80N60FD2TU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 61 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 21ns/126ns
Switching Energy: 1mJ (on), 520µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 290 W
auf Bestellung 838 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.06 EUR
30+ 9.57 EUR
120+ 8.21 EUR
510+ 7.29 EUR
Mindestbestellmenge: 3
IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
Mindestbestellmenge: 5
IXFK80N60P3 IXFK(X)80N60P3.pdf
IXFK80N60P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 80A; 1300W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 80A
Power dissipation: 1.3kW
Case: TO264
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+15.76 EUR
Mindestbestellmenge: 5
IXFK80N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n60p3_datasheet.pdf.pdf
IXFK80N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 80A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 724 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+42.9 EUR
25+ 34.74 EUR
100+ 32.7 EUR
500+ 29.63 EUR
IXFN80N60P3 IXFN80N60P3.pdf
IXFN80N60P3
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 66A; SOT227B; screw; Idm: 200A
Technology: HiPerFET™; Polar3™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 66A
Pulsed drain current: 200A
Power dissipation: 960W
Case: SOT227B
Gate-source voltage: ±40V
On-state resistance: 77mΩ
Gate charge: 0.19µC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 250ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFN80N60P3 DS100356(IXFN80N60P3).pdf
IXFN80N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 66A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 40A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 298 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+88.63 EUR
10+ 78.76 EUR
100+ 68.89 EUR
IXFX80N60P3 littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_80n60p3_datasheet.pdf.pdf
IXFX80N60P3
Hersteller: IXYS
Description: MOSFET N-CH 600V 80A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+42.61 EUR
30+ 34.49 EUR
120+ 32.46 EUR
PJMF280N60E1_T0_00001 PJMF280N60E1.pdf
PJMF280N60E1_T0_00001
Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 926 pF @ 400 V
auf Bestellung 1968 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.51 EUR
50+ 4.44 EUR
100+ 3.65 EUR
500+ 3.09 EUR
1000+ 2.62 EUR
Mindestbestellmenge: 5
PJMF580N60E1_T0_00001 PJMF580N60E1.pdf
PJMF580N60E1_T0_00001
Hersteller: Panjit International Inc.
Description: 600V SUPER JUNCITON MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 580mOhm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220AB-F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 400 V
auf Bestellung 1966 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.95 EUR
50+ 3.19 EUR
100+ 2.53 EUR
500+ 2.14 EUR
1000+ 1.74 EUR
Mindestbestellmenge: 7
SGF80N60UFTU FAIRS17768-1.pdf?t.download=true&u=5oefqw
SGF80N60UFTU
Hersteller: Fairchild Semiconductor
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Supplier Device Package: TO-3PF
Td (on/off) @ 25°C: 23ns/90ns
Switching Energy: 570µJ (on), 590µJ (off)
Test Condition: 300V, 40A, 5Ohm, 15V
Gate Charge: 175 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 220 A
Power - Max: 110 W
auf Bestellung 26706 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
59+12.36 EUR
Mindestbestellmenge: 59
SGF80N60UFTU-ON FAIRS17768-1.pdf?t.download=true&u=5oefqw
SGF80N60UFTU-ON
Hersteller: onsemi
Description: IGBT, 80A, 600V, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 2983 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
59+12.36 EUR
Mindestbestellmenge: 59
SIHB080N60E-GE3 sihb080n60e.pdf
SIHB080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET D2PAK (TO-
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 1732 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+12.53 EUR
50+ 9.93 EUR
100+ 8.51 EUR
500+ 7.57 EUR
1000+ 6.48 EUR
Mindestbestellmenge: 3
SIHB180N60E-GE3 sihb180n60e.pdf
SIHB180N60E-GE3
Hersteller: Vishay
Trans MOSFET N-CH 600V 19A 3-Pin(2+Tab) D2PAK
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
SIHD180N60E-GE3 sihd180n60e.pdf
SIHD180N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO252AA
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 100 V
auf Bestellung 2909 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 4
SIHF080N60E-GE3 sihf080n60e.pdf
SIHF080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220 FUL
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 1660 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.06 EUR
50+ 7.97 EUR
100+ 6.84 EUR
500+ 6.08 EUR
1000+ 5.2 EUR
Mindestbestellmenge: 3
SIHG080N60E-GE3 sihg080n60e.pdf
Hersteller: Vishay
Trans MOSFET N-CH 600V 35A Tube
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
SIHG080N60E-GE3 sihg080n60e.pdf
SIHG080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-247AC,
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 279 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.52 EUR
25+ 9.13 EUR
100+ 7.83 EUR
Mindestbestellmenge: 3
SIHG180N60E-GE3 sihg180n60e.pdf
SIHG180N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1085 pF @ 100 V
auf Bestellung 329 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+8.66 EUR
25+ 6.87 EUR
100+ 5.89 EUR
Mindestbestellmenge: 4
SIHG80N60EF-GE3 sihg80n60ef.pdf
SIHG80N60EF-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 80A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 40A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 400 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 100 V
auf Bestellung 479 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+36.09 EUR
25+ 29.21 EUR
100+ 27.5 EUR
SIHH080N60E-T1-GE3 sihh080n60e.pdf
SIHH080N60E-T1-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET POWERPAK 8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 184W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: PowerPAK® 8 x 8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 3107 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+11.83 EUR
10+ 9.93 EUR
100+ 8.04 EUR
500+ 7.14 EUR
1000+ 6.12 EUR
Mindestbestellmenge: 3
SIHP080N60E-GE3 sihp080n60e.pdf
SIHP080N60E-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET TO-220AB,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
auf Bestellung 838 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3+10.17 EUR
50+ 8.04 EUR
100+ 6.89 EUR
500+ 6.13 EUR
Mindestbestellmenge: 3
STP80N600K6 stp80n600k6.pdf
Hersteller: STMicroelectronics
Description: N-CHANNEL 800 V, 515 MOHM TYP.,
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 10.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 400 V
auf Bestellung 30 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+5.85 EUR
Mindestbestellmenge: 5
WMJ80N60C4 WMJ80N60C4.pdf
WMJ80N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
auf Bestellung 52 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
5+14.91 EUR
12+ 6.13 EUR
Mindestbestellmenge: 5
WMJ80N60C4 WMJ80N60C4.pdf
WMJ80N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 375ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 52 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+14.91 EUR
12+ 6.13 EUR
Mindestbestellmenge: 5
FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw ONSM-S-A0003584055-1.pdf?t.download=true&u=5oefqw
Hersteller: ON Semiconductor
auf Bestellung 730 Stücke:
Lieferzeit 21-28 Tag (e)
G80N60
Hersteller: FSC
auf Bestellung 1350 Stücke:
Lieferzeit 21-28 Tag (e)
G80N60UF
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
IXFN80N60P3 DS100356(IXFN80N60P3).pdf
auf Bestellung 16500 Stücke:
Lieferzeit 18-25 Tag (e)
SGF80N60UF
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU FAIRS17768-1.pdf?t.download=true&u=5oefqw
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU===Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU==Fairchild
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGF80N60UFTU==FSC
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60RUFD
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UF
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD
Hersteller: FAIRCHILD
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD
Hersteller: FSC
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD===FSC
auf Bestellung 14500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFD=FSC
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDT==FSC
auf Bestellung 14500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDTU=
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDTU===Fairchild
auf Bestellung 450 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFDTU=FSC
auf Bestellung 14500 Stücke:
Lieferzeit 21-28 Tag (e)
SGH80N60UFTU SGH80N60UF.pdf
auf Bestellung 6030 Stücke:
Lieferzeit 21-28 Tag (e)
SPB80N60S2-08
auf Bestellung 180 Stücke:
Lieferzeit 21-28 Tag (e)
Транзистор польовий FCD380N60E 10.2A 600V N-ch DPAK
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
FGH80N60FD2TU(Transistor)
Produktcode: 61002
Verschiedene Bauteile > Verschiedene Bauteile 2
Produkt ist nicht verfügbar
FGH80N60FDTU
Produktcode: 155558		 fgh80n60fd-d.pdf
Transistoren > Transistoren IGBT, Leistungsmodule
Produkt ist nicht verfügbar
G80N60
Produktcode: 77783
Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
G80N60UF
Produktcode: 86430
Verschiedene Bauteile > Other components 3
Produkt ist nicht verfügbar
G80N60UFD(Transistor)
Produktcode: 100656		 sgh80n60ufd.pdf
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO247AC
Vces: 600 V
Vce: 2,1 V
Ic 25: 80 A
Ic 100: 40 A
Pd 25: 195 W
Produkt ist nicht verfügbar
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