Suchergebnisse für "85EPF" : 8
Art der Ansicht :
Mindestbestellmenge: 2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 85EPF12 | IR | 04+ QFP |
auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) |
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VS-85EPF12 | Vishay Semiconductors | Rectifiers 160 Amp 1200 Volt 95 ns |
auf Bestellung 320 Stücke: Lieferzeit 14-28 Tag (e) |
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VS-85EPF12 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 85A POWIRTAB Packaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
auf Bestellung 375 Stücke: Lieferzeit 21-28 Tag (e) |
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VS-85EPF12 Produktcode: 38120 |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle |
Produkt ist nicht verfügbar
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85EPF04 | Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 400V 85A POWIRTABPackaging: Bulk Package / Case: PowerTab™, PowIRtab™ Mounting Type: Chassis Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 190 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowIRtab™ Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 400 V |
Produkt ist nicht verfügbar |
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VS-85EPF12 | Vishay |
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab |
Produkt ist nicht verfügbar |
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VS-85EPF12-M4 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GP 1.2KV 85A POWIRTAB Packaging: Bulk Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowerTab® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
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VS-85EPF12HE4 | Vishay |
Description: NEW INPUT DIODES - POWIRTAB Packaging: Strip Package / Case: PowerTab® Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 480 ns Technology: Standard Current - Average Rectified (Io): 85A Supplier Device Package: PowerTab® Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
| VS-85EPF12 |
Hersteller: Vishay Semiconductors
Rectifiers 160 Amp 1200 Volt 95 ns
Rectifiers 160 Amp 1200 Volt 95 ns
auf Bestellung 320 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 27.09 EUR |
| 10+ | 24.91 EUR |
| 25+ | 21.94 EUR |
| 100+ | 20.64 EUR |
| 250+ | 19.99 EUR |
| 375+ | 18.69 EUR |
| 1125+ | 17.13 EUR |
| VS-85EPF12 |
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
auf Bestellung 375 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 26.88 EUR |
| 25+ | 21.77 EUR |
| 100+ | 20.49 EUR |
| 85EPF04 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Description: DIODE GEN PURP 400V 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab™, PowIRtab™
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 190 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowIRtab™
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 400 V
Produkt ist nicht verfügbar
| VS-85EPF12 |
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Hersteller: Vishay
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab
Rectifier Diode Switching 1.2KV 85A 480ns 2-Pin(1+Tab) Power Tab
Produkt ist nicht verfügbar
| VS-85EPF12-M4 |
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Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GP 1.2KV 85A POWIRTAB
Packaging: Bulk
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
| VS-85EPF12HE4 |
Hersteller: Vishay
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: NEW INPUT DIODES - POWIRTAB
Packaging: Strip
Package / Case: PowerTab®
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 480 ns
Technology: Standard
Current - Average Rectified (Io): 85A
Supplier Device Package: PowerTab®
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 85 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar