Suchergebnisse für "9926C" : 21
Art der Ansicht :
Mindestbestellmenge: 175
Mindestbestellmenge: 175
Mindestbestellmenge: 64
Mindestbestellmenge: 64
Mindestbestellmenge: 21
Mindestbestellmenge: 22
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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AO9926C | ALPHA & OMEGA SEMICONDUCTOR |
 Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.1A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced |
auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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AO9926C | ALPHA & OMEGA SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.1A Power dissipation: 1.28W Case: SO8 Gate-source voltage: ±12V On-state resistance: 23mΩ Mounting: SMD Gate charge: 6nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1990 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9926CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhanced |
auf Bestellung 2309 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9926CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2309 Stücke: Lieferzeit 7-14 Tag (e) |
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SI9926CDY-T1-E3 | Vishay Semiconductors |
MOSFET 20V Vds 12V Vgs SO-8 |
auf Bestellung 6556 Stücke: Lieferzeit 14-28 Tag (e) |
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SI9926CDY-T1-GE3 | Vishay |
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI9926CDY-T1-GE3 | Vishay Semiconductors |
MOSFET 20V Vds 12V Vgs SO-8 |
auf Bestellung 4850 Stücke: Lieferzeit 14-28 Tag (e) |
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| APM9926CK | ANPEC | SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| APM9926CK | ANPEC | 07+ SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI9926CDY |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI9926CDYT1E3 | VISHAY |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SM9926C |
auf Bestellung 1409 Stücke: Lieferzeit 21-28 Tag (e) |
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| SM9926COC-TRL |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI9926CDY-E3 Produktcode: 163294 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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AO9926C | Alpha & Omega Semiconductor |
Trans MOSFET N-CH 20V 7.6A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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SI9926CDY-T1-E3 | Vishay |
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 8A Pulsed drain current: 30A Power dissipation: 2W Case: SO8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
| AO9926C |
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Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 175+ | 0.41 EUR |
| 181+ | 0.4 EUR |
| 221+ | 0.32 EUR |
| 234+ | 0.31 EUR |
| AO9926C |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.1A; 1.28W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.1A
Power dissipation: 1.28W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 175+ | 0.41 EUR |
| 181+ | 0.4 EUR |
| 221+ | 0.32 EUR |
| 234+ | 0.31 EUR |
| 3000+ | 0.29 EUR |
| SI9926CDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
auf Bestellung 2309 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 117+ | 0.61 EUR |
| 132+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.43 EUR |
| SI9926CDY-T1-E3 |
|
Hersteller: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2309 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 64+ | 1.13 EUR |
| 117+ | 0.61 EUR |
| 132+ | 0.54 EUR |
| 152+ | 0.47 EUR |
| 162+ | 0.44 EUR |
| 500+ | 0.43 EUR |
| SI9926CDY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 12V Vgs SO-8
MOSFET 20V Vds 12V Vgs SO-8
auf Bestellung 6556 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 21+ | 2.59 EUR |
| 25+ | 2.1 EUR |
| 100+ | 1.66 EUR |
| 500+ | 1.47 EUR |
| 1000+ | 1.27 EUR |
| 2500+ | 1.21 EUR |
| 5000+ | 1.15 EUR |
| SI9926CDY-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| SI9926CDY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFET 20V Vds 12V Vgs SO-8
MOSFET 20V Vds 12V Vgs SO-8
auf Bestellung 4850 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 2.47 EUR |
| 26+ | 2.02 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.11 EUR |
| AO9926C |
|
Hersteller: Alpha & Omega Semiconductor
Trans MOSFET N-CH 20V 7.6A 8-Pin SOIC
Trans MOSFET N-CH 20V 7.6A 8-Pin SOIC
Produkt ist nicht verfügbar
| SI9926CDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
Trans MOSFET N-CH 20V 8A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
| SI9926CDY-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| SI9926CDY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 2W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar