Suchergebnisse für "BD179" : 23
Art der Ansicht :
Mindestbestellmenge: 616
Mindestbestellmenge: 3
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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BD179 Produktcode: 81888 |
ON |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-126 fT: 3 MHz Uceo,V: 80 Ic,A: 3 h21: 100 Bem.: 30W ZCODE: THT |
verfügbar: 13 Stück
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BD179 | MULTICOMP PRO |
Description: MULTICOMP PRO - BD179 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-126, Durchsteckmontage tariffCode: 85412900 rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 100hFE hazardous: false rohsPhthalatesCompliant: YES Dauer-Kollektorstrom: 3A usEccn: EAR99 euEccn: NLR Verlustleistung: 30W Anzahl der Pins: 3Pin(s) Kollektor-Emitter-Spannung, max.: 80V productTraceability: No Übergangsfrequenz: 3MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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BD17910STU | ONSEMI |
Description: ONSEMI - BD17910STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: NO euEccn: NLR hazardous: false rohsPhthalatesCompliant: NO usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 8984 Stücke: Lieferzeit 14-21 Tag (e) |
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BD17910STU | Fairchild Semiconductor |
Description: TRANS NPN 80V 3A TO126-3 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
auf Bestellung 8984 Stücke: Lieferzeit 21-28 Tag (e) |
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BD179G | ONSEMI |
Description: ONSEMI - BD179G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-225, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 63hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Dauer-Kollektorstrom: 3A usEccn: EAR99 euEccn: NLR Verlustleistung: 30W Bauform - Transistor: TO-225 Anzahl der Pins: 3Pin(s) Produktpalette: - Kollektor-Emitter-Spannung, max.: 80V productTraceability: No Wandlerpolarität: NPN Übergangsfrequenz: 3MHz Betriebstemperatur, max.: 150°C |
auf Bestellung 2173 Stücke: Lieferzeit 14-21 Tag (e) |
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BD179 |
auf Bestellung 15200 Stücke: Lieferzeit 21-28 Tag (e) |
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BD179G | On Semiconductor | TO-126 PBF |
auf Bestellung 266 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE182 | NTE Electronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 60V; 10A; 90W; TO127 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 10A Power dissipation: 90W Case: TO127 Current gain: 5...100 Mounting: THT |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
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BD179G Produktcode: 82107 |
Transistoren > Bipolar-Transistoren NPN |
Produkt ist nicht verfügbar
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BD179 | STMicroelectronics | Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) SOT-32 Tube |
Produkt ist nicht verfügbar |
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BD179 | STMicroelectronics | Bipolar Transistors - BJT NPN Gen Purpose Sw |
Produkt ist nicht verfügbar |
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BD179 | onsemi | Bipolar Transistors - BJT 3A 80V 30W NPN |
Produkt ist nicht verfügbar |
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BD179 | STMicroelectronics |
Description: TRANS NPN 80V 3A SOT32 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A Supplier Device Package: SOT-32 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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BD179 | onsemi |
Description: TRANS NPN 80V 3A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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BD17900 | Winchester Interconnect |
Description: TOOL HAND CRIMPER COAX SIDE Packaging: Box For Use With/Related Products: Coaxial, RF - BNC Tool Type: Hand Crimper Part Status: Active Tool Method: Manual Ratcheting: No Ratchet Wire Entry Location: Side Entry |
Produkt ist nicht verfügbar |
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BD17910STU | ON Semiconductor | Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-126 Tube |
Produkt ist nicht verfügbar |
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BD17910STU | onsemi |
Description: TRANS NPN 80V 3A TO126-3 Packaging: Tube Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126-3 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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BD179G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 30W Case: TO225 Current gain: 63...160 Mounting: THT Kind of package: bulk Frequency: 3MHz |
Produkt ist nicht verfügbar |
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BD179G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 30W Case: TO225 Current gain: 63...160 Mounting: THT Kind of package: bulk Frequency: 3MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BD179G | onsemi | Bipolar Transistors - BJT 3A 80V 30W NPN |
Produkt ist nicht verfügbar |
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BD179G | ON Semiconductor | Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-225 Box |
Produkt ist nicht verfügbar |
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BD179G | onsemi |
Description: TRANS NPN 80V 3A TO126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 3MHz Supplier Device Package: TO-126 Part Status: Obsolete Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
BD179 Produktcode: 81888 |
Hersteller: ON
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-126
fT: 3 MHz
Uceo,V: 80
Ic,A: 3
h21: 100
Bem.: 30W
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-126
fT: 3 MHz
Uceo,V: 80
Ic,A: 3
h21: 100
Bem.: 30W
ZCODE: THT
verfügbar: 13 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.51 EUR |
10+ | 0.45 EUR |
BD179 |
Hersteller: MULTICOMP PRO
Description: MULTICOMP PRO - BD179 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-126, Durchsteckmontage
tariffCode: 85412900
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Anzahl der Pins: 3Pin(s)
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C
Description: MULTICOMP PRO - BD179 - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-126, Durchsteckmontage
tariffCode: 85412900
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 100hFE
hazardous: false
rohsPhthalatesCompliant: YES
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Anzahl der Pins: 3Pin(s)
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)BD17910STU |
Hersteller: ONSEMI
Description: ONSEMI - BD17910STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - BD17910STU - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT
tariffCode: 85412900
productTraceability: No
rohsCompliant: NO
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: NO
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 8984 Stücke:
Lieferzeit 14-21 Tag (e)BD17910STU |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 80V 3A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A TO126-3
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
auf Bestellung 8984 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
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616+ | 1.18 EUR |
BD179G |
Hersteller: ONSEMI
Description: ONSEMI - BD179G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-225, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 63hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-225
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C
Description: ONSEMI - BD179G - Bipolarer Einzeltransistor (BJT), NPN, 80 V, 3 A, 30 W, TO-225, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
rohsCompliant: YES
DC-Stromverstärkung (hFE), min.: 63hFE
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Dauer-Kollektorstrom: 3A
usEccn: EAR99
euEccn: NLR
Verlustleistung: 30W
Bauform - Transistor: TO-225
Anzahl der Pins: 3Pin(s)
Produktpalette: -
Kollektor-Emitter-Spannung, max.: 80V
productTraceability: No
Wandlerpolarität: NPN
Übergangsfrequenz: 3MHz
Betriebstemperatur, max.: 150°C
auf Bestellung 2173 Stücke:
Lieferzeit 14-21 Tag (e)NTE182 |
Hersteller: NTE Electronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 90W; TO127
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 90W
Case: TO127
Current gain: 5...100
Mounting: THT
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 60V; 10A; 90W; TO127
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 90W
Case: TO127
Current gain: 5...100
Mounting: THT
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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3+ | 31.52 EUR |
BD179 |
Hersteller: STMicroelectronics
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) SOT-32 Tube
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) SOT-32 Tube
Produkt ist nicht verfügbar
BD179 |
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Purpose Sw
Bipolar Transistors - BJT NPN Gen Purpose Sw
Produkt ist nicht verfügbar
BD179 |
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 3A SOT32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A
Supplier Device Package: SOT-32
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A SOT32
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 2V, 1A
Supplier Device Package: SOT-32
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
BD179 |
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
BD17900 |
Hersteller: Winchester Interconnect
Description: TOOL HAND CRIMPER COAX SIDE
Packaging: Box
For Use With/Related Products: Coaxial, RF - BNC
Tool Type: Hand Crimper
Part Status: Active
Tool Method: Manual
Ratcheting: No Ratchet
Wire Entry Location: Side Entry
Description: TOOL HAND CRIMPER COAX SIDE
Packaging: Box
For Use With/Related Products: Coaxial, RF - BNC
Tool Type: Hand Crimper
Part Status: Active
Tool Method: Manual
Ratcheting: No Ratchet
Wire Entry Location: Side Entry
Produkt ist nicht verfügbar
BD17910STU |
Hersteller: ON Semiconductor
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-126 Tube
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-126 Tube
Produkt ist nicht verfügbar
BD17910STU |
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A TO126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar
BD179G |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Produkt ist nicht verfügbar
BD179G |
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Anzahl je Verpackung: 1 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 30W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 30W
Case: TO225
Current gain: 63...160
Mounting: THT
Kind of package: bulk
Frequency: 3MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BD179G |
Hersteller: ON Semiconductor
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-225 Box
Trans GP BJT NPN 80V 3A 30000mW 3-Pin(3+Tab) TO-225 Box
Produkt ist nicht verfügbar
BD179G |
Hersteller: onsemi
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Description: TRANS NPN 80V 3A TO126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Part Status: Obsolete
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 30 W
Produkt ist nicht verfügbar