Suchergebnisse für "DMN601VK" : 21
Art der Ansicht :
Mindestbestellmenge: 3000
Mindestbestellmenge: 50
Mindestbestellmenge: 3000
Mindestbestellmenge: 25
Mindestbestellmenge: 3000
Mindestbestellmenge: 3000
Mindestbestellmenge: 57
Mindestbestellmenge: 3000
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Mindestbestellmenge: 3000
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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DMN601VK-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R |
auf Bestellung 1527000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VK-7 | Diodes Incorporated | MOSFET Dual N-Channel |
auf Bestellung 9102 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN601VK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 1527000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601VK-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 1532099 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601VKQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VKQ-7 | DIODES INC. |
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 305mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 305mA Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm Verlustleistung, p-Kanal: 250mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 250mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VKQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VKQ-7 | DIODES INC. |
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 305mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 305mA Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm Verlustleistung, p-Kanal: 250mW Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: SOT-563 Anzahl der Pins: 6Pin(s) Produktpalette: TUK SGACK902S Keystone Coupler Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 250mW Betriebstemperatur, max.: 150°C SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 2975 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VKQ-7 | Diodes Incorporated | MOSFET 60V Dual N-Ch FET 20Vgss 250mW |
auf Bestellung 2083 Stücke: Lieferzeit 14-28 Tag (e) |
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DMN601VKQ-7 | Diodes Zetex | Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R |
auf Bestellung 534000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMN601VKQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 538440 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601VKQ-7 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 0.305A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 305mA Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 Part Status: Active |
auf Bestellung 537000 Stücke: Lieferzeit 21-28 Tag (e) |
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DMN601VK | Diodes Incorporated | MOSFET |
Produkt ist nicht verfügbar |
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DMN601VK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN601VK-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN601VK-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
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DMN601VKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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DMN601VKQ-7 | DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.3A Pulsed drain current: 0.8A Power dissipation: 0.25W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMN601VKQ-7 | Diodes Inc | Trans MOSFET N-CH 60V 0.305A Automotive 6-Pin SOT-563 T/R |
Produkt ist nicht verfügbar |
DMN601VK-7 |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R
auf Bestellung 1527000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.078 EUR |
DMN601VK-7 |
Hersteller: Diodes Incorporated
MOSFET Dual N-Channel
MOSFET Dual N-Channel
auf Bestellung 9102 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.04 EUR |
72+ | 0.72 EUR |
174+ | 0.3 EUR |
1000+ | 0.22 EUR |
3000+ | 0.18 EUR |
9000+ | 0.15 EUR |
24000+ | 0.14 EUR |
DMN601VK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 1527000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.18 EUR |
9000+ | 0.15 EUR |
75000+ | 0.12 EUR |
DMN601VK-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 1532099 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
37+ | 0.72 EUR |
100+ | 0.36 EUR |
500+ | 0.3 EUR |
1000+ | 0.22 EUR |
DMN601VKQ-7 |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
9000+ | 0.1 EUR |
24000+ | 0.085 EUR |
DMN601VKQ-7 |
Hersteller: DIODES INC.
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 305mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 305mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm
Verlustleistung, p-Kanal: 250mW
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 250mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 305mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 305mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm
Verlustleistung, p-Kanal: 250mW
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 250mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)DMN601VKQ-7 |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.12 EUR |
9000+ | 0.1 EUR |
24000+ | 0.085 EUR |
DMN601VKQ-7 |
Hersteller: DIODES INC.
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 305mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 305mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm
Verlustleistung, p-Kanal: 250mW
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 250mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
Description: DIODES INC. - DMN601VKQ-7 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 305 mA, 305 mA, 2 ohm
tariffCode: 85411000
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 305mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 305mA
Drain-Source-Durchgangswiderstand, p-Kanal: 2ohm
Verlustleistung, p-Kanal: 250mW
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: SOT-563
Anzahl der Pins: 6Pin(s)
Produktpalette: TUK SGACK902S Keystone Coupler
Drain-Source-Durchgangswiderstand, n-Kanal: 2ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 250mW
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (23-Jan-2024)
auf Bestellung 2975 Stücke:
Lieferzeit 14-21 Tag (e)DMN601VKQ-7 |
Hersteller: Diodes Incorporated
MOSFET 60V Dual N-Ch FET 20Vgss 250mW
MOSFET 60V Dual N-Ch FET 20Vgss 250mW
auf Bestellung 2083 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
81+ | 0.65 EUR |
179+ | 0.29 EUR |
1000+ | 0.23 EUR |
3000+ | 0.19 EUR |
9000+ | 0.16 EUR |
DMN601VKQ-7 |
Hersteller: Diodes Zetex
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A Automotive AEC-Q101 6-Pin SOT-563 T/R
auf Bestellung 534000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.091 EUR |
DMN601VKQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 538440 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
41+ | 0.64 EUR |
100+ | 0.32 EUR |
500+ | 0.29 EUR |
1000+ | 0.22 EUR |
DMN601VKQ-7 |
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Description: MOSFET 2N-CH 60V 0.305A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 305mA
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 537000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
9000+ | 0.17 EUR |
75000+ | 0.15 EUR |
150000+ | 0.14 EUR |
DMN601VK-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601VK-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN601VK-7 |
Hersteller: Diodes Inc
Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A 6-Pin SOT-563 T/R
Produkt ist nicht verfügbar
DMN601VKQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
DMN601VKQ-7 |
Hersteller: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300mA; Idm: 0.8A; 250mW; SOT563
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.25W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
DMN601VKQ-7 |
Hersteller: Diodes Inc
Trans MOSFET N-CH 60V 0.305A Automotive 6-Pin SOT-563 T/R
Trans MOSFET N-CH 60V 0.305A Automotive 6-Pin SOT-563 T/R
Produkt ist nicht verfügbar