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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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IRF540NPBF Infineon (IR) Power MOSFET Transistor 130W 100V 33A 44mΩ TO220AB Produktcode: 3289 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220AB Uds,V: 100 Idd,A: 33 Ciss, pF/Qg, nC: 1960/71 JHGF: THT |
verfügbar: 707 Stück
erwartet:
100 Stück
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IRF540NSPBF Produktcode: 34259 |
IR |
Transistoren > MOSFET N-CH Uds,V: 100 V Idd,A: 33 A Rds(on), Ohm: 44 mOhm Ciss, pF/Qg, nC: 1960/71 JHGF: SMD |
auf Bestellung 110 Stück: Lieferzeit 21-28 Tag (e) |
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IRF540PBF Produktcode: 182036 |
Siliconix |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 V Idd,A: 28 A JHGF: THT |
auf Bestellung 258 Stück: Lieferzeit 21-28 Tag (e) |
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IRF540SPBF Produktcode: 123222 |
SILI |
Transistoren > MOSFET N-CH Uds,V: 100 V Idd,A: 20 A Rds(on), Ohm: 0,07 Ohm Ciss, pF/Qg, nC: 1700/72 JHGF: SMD |
auf Bestellung 15 Stück: Lieferzeit 21-28 Tag (e) |
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IRF540ZPBF Produktcode: 42002 |
IR |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Uds,V: 100 Idd,A: 36 Rds(on), Ohm: 0.0266 Ciss, pF/Qg, nC: 1770/42 JHGF: THT |
verfügbar: 208 Stück
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UF5401 Produktcode: 67600 |
Vishay |
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden Gehäuse: DO-201AD Urev.,V: 100 Iausricht.,А: 3 Beschreibung: Gleichrichter Монтаж: THT Падіння напруги Vf: 1 V |
verfügbar: 2 Stück
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UF5402-DIO Produktcode: 121260 |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle Gehäuse: DO-201AD Vrr, V: 200 V Iav, A: 3 A Trr, ns: 50 ns |
auf Bestellung 243 Stück: Lieferzeit 21-28 Tag (e) |
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UF5402-YAN Produktcode: 172077 |
Dioden, Diodenbrücken, Zenerdioden > Suppressordioden (Schutzdioden, restriktive) |
auf Bestellung 3 Stück: Lieferzeit 21-28 Tag (e) |
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UF5404 PBF Produktcode: 20919 |
Diodes |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle Gehäuse: DO-201 Vrr, V: 400 Iav, A: 3 Trr, ns: 50 Austauschbar:: UF5408 |
auf Bestellung 12 Stück: Lieferzeit 21-28 Tag (e) |
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UF5408 Produktcode: 27170 |
Vishay |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle Gehäuse: DO-27 Vrr, V: 1000 Iav, A: 3 Trr, ns: 75 |
verfügbar: 358 Stück
erwartet:
2000 Stück
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+2 |
Модуль с 4х MOSFET IRF540 Produktcode: 193624 |
Modulare Elemente > Arduino und andere modulare Elemente Опис: Шилд для керування навантаженням. Модуль складається із 4х MOSFET IRF540. Також на платі встановлена мікросхема PS8201 (оптопара) для ізоляції контролера від навантаження. Може використовуватись тільки для керування ланцюгом постійного струму. Навантаження максимум: 9...100VDC (25А). Управління сигналом від МК: 5В. Тип: Шилд комутуючі |
erwartet:
30 Stück
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F54019-000 | TE Connectivity | Hexa Shield ADAPTER |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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F54050004 | Honeywell | Industrial Potentiometer |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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F5400 | FSC | DIP14 |
auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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F5407T |
auf Bestellung 3200 Stücke: Lieferzeit 21-28 Tag (e) |
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F540NS | IR | TO |
auf Bestellung 3325 Stücke: Lieferzeit 21-28 Tag (e) |
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AUIRF540Z | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 92W Technology: HEXFET® On-state resistance: 26.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 36A |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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AUIRF540Z | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 92W Technology: HEXFET® On-state resistance: 26.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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C274ACF5400LF0J | KEMET |
Category: Motor capacitors Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5% Capacitance: 40µF Operating temperature: -25...85°C Tolerance: ±5% Body dimensions: Ø50x120mm Mounting: M8 screw Type of capacitor: polypropylene Leads: leads 40mm Operating voltage: 470V AC Service life: 10000h Capacitors series: C27 Climate class: 25/085/21 Capacitor application: motors, run |
auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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C274ACF5400LF0J | KEMET |
Category: Motor capacitors Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5% Capacitance: 40µF Operating temperature: -25...85°C Tolerance: ±5% Body dimensions: Ø50x120mm Mounting: M8 screw Type of capacitor: polypropylene Leads: leads 40mm Operating voltage: 470V AC Service life: 10000h Capacitors series: C27 Climate class: 25/085/21 Capacitor application: motors, run Anzahl je Verpackung: 1 Stücke |
auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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C276CCF5400LG0J | KEMET |
Category: Motor capacitors Description: Capacitor: motors, run; 40uF; 420VAC; Ø45x95mm; -25÷85°C; ±5% Capacitance: 40µF Climate class: 25/085/21 Capacitor application: motors, run Leads: leads 40mm Body dimensions: Ø45x95mm Type of capacitor: polypropylene Mounting: M8 screw Capacitors series: C27 Operating voltage: 420V AC Tolerance: ±5% Service life: 10000h Operating temperature: -25...85°C Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRF540 | Siliconix |
N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10 IRF540 TIRF540 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540N | International Rectifier |
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n Anzahl je Verpackung: 50 Stücke |
auf Bestellung 8000 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540N | International Rectifier |
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n Anzahl je Verpackung: 50 Stücke |
auf Bestellung 585 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NL | International Rectifier |
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl Anzahl je Verpackung: 10 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NL | International Rectifier |
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl Anzahl je Verpackung: 10 Stücke |
auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NL | International Rectifier |
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl Anzahl je Verpackung: 10 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 140W Technology: HEXFET® On-state resistance: 44mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 47.3nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 33A |
auf Bestellung 4713 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 140W Technology: HEXFET® On-state resistance: 44mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 47.3nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 33A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4713 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NPBF | Infineon | Транз. Пол. БМ N-HEXFET TO220AB Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm |
auf Bestellung 857 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NS | JSMicro Semiconductor |
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS JSMICRO TIRF540ns JSM Anzahl je Verpackung: 25 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NSPBF | Infineon | Транз. Пол. БМ N-HEXFET D2-PAK Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm |
auf Bestellung 104 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540NSTRL | International Rectifier |
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns Anzahl je Verpackung: 10 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NSTRL | International Rectifier |
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns Anzahl je Verpackung: 10 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 150W On-state resistance: 77mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 20A |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 150W On-state resistance: 77mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2320 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540S | Siliconix |
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω IRF540S TIRF540s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Mounting: SMD Kind of package: reel; tape Case: D2PAK; TO263 Power dissipation: 150W On-state resistance: 77mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 100V Drain current: 20A |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Mounting: SMD Kind of package: reel; tape Case: D2PAK; TO263 Power dissipation: 150W On-state resistance: 77mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 72nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 110A Drain-source voltage: 100V Drain current: 20A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540Z | International Rectifier |
N-MOSFET 36A 100V 92W IRF540Z TIRF540z Anzahl je Verpackung: 50 Stücke |
auf Bestellung 135 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 92W Technology: HEXFET® On-state resistance: 26.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 36A |
auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF540ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB Mounting: THT Kind of package: tube Case: TO220AB Power dissipation: 92W Technology: HEXFET® On-state resistance: 26.5mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 42nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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KPAL03F540J | MIFLEX |
Category: Audio polypropylene capacitors Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT Type of capacitor: aluminum-polypropylene-paper Capacitance: 4µF Operating voltage: 250V DC Tolerance: ±5% Capacitor application: audio equipment Body dimensions: Ø76x70mm Climate class: 25/70/21 Operating temperature: -25...70°C Leads: axial Mounting: THT Dissipation: 0.0035 Capacitors series: KPAL03 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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KPAL04F540J | MIFLEX |
Category: Audio polypropylene capacitors Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT Type of capacitor: aluminum-polypropylene-paper Capacitance: 4µF Operating voltage: 250V DC Tolerance: ±5% Capacitor application: audio equipment Body dimensions: Ø76x70mm Climate class: 25/70/21 Operating temperature: -25...70°C Leads: radial Mounting: THT Dissipation: 0.0035 Capacitors series: KPAL04 Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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SF5408-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 150A Case: SOD64 Max. forward voltage: 1.7V Leakage current: 50µA Reverse recovery time: 75ns |
auf Bestellung 2124 Stücke: Lieferzeit 14-21 Tag (e) |
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SF5408-TAP | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 150A Case: SOD64 Max. forward voltage: 1.7V Leakage current: 50µA Reverse recovery time: 75ns Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2124 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5400 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5400 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 290 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5400 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5400 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 290 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5401 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5401 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns |
auf Bestellung 1465 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5401 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1465 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5401 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 325 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5401 | Diotec Semiconductor | Випрямний ультрашвидкий діод вивідний; Uзвор, В = 100; Io, А = 3; trr, нс = 50; Тексп, °C = -50...+175; DO-201AD |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5402 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 2045 Stücke: Lieferzeit 14-21 Tag (e) |
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+1 |
UF5402 | DC COMPONENTS |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 150A; DO27; Ufmax: 1V; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Max. forward impulse current: 150A Case: DO27 Max. forward voltage: 1V Reverse recovery time: 50ns |
auf Bestellung 835 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5402 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns |
auf Bestellung 9445 Stücke: Lieferzeit 14-21 Tag (e) |
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UF5402 | DIOTEC SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Max. load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 100A Case: DO201 Max. forward voltage: 1V Leakage current: 5µA Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 9445 Stücke: Lieferzeit 7-14 Tag (e) |
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UF5402 | YANGJIE TECHNOLOGY |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: superfast switching Kind of package: tape Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2045 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF540NPBF Infineon (IR) Power MOSFET Transistor 130W 100V 33A 44mΩ TO220AB Produktcode: 3289 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Uds,V: 100
Idd,A: 33
Ciss, pF/Qg, nC: 1960/71
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220AB
Uds,V: 100
Idd,A: 33
Ciss, pF/Qg, nC: 1960/71
JHGF: THT
verfügbar: 707 Stück
erwartet:
100 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.88 EUR |
10+ | 0.79 EUR |
IRF540NSPBF Produktcode: 34259 |
Hersteller: IR
Transistoren > MOSFET N-CH
Uds,V: 100 V
Idd,A: 33 A
Rds(on), Ohm: 44 mOhm
Ciss, pF/Qg, nC: 1960/71
JHGF: SMD
Transistoren > MOSFET N-CH
Uds,V: 100 V
Idd,A: 33 A
Rds(on), Ohm: 44 mOhm
Ciss, pF/Qg, nC: 1960/71
JHGF: SMD
auf Bestellung 110 Stück:
Lieferzeit 21-28 Tag (e)IRF540SPBF Produktcode: 123222 |
Hersteller: SILI
Transistoren > MOSFET N-CH
Uds,V: 100 V
Idd,A: 20 A
Rds(on), Ohm: 0,07 Ohm
Ciss, pF/Qg, nC: 1700/72
JHGF: SMD
Transistoren > MOSFET N-CH
Uds,V: 100 V
Idd,A: 20 A
Rds(on), Ohm: 0,07 Ohm
Ciss, pF/Qg, nC: 1700/72
JHGF: SMD
auf Bestellung 15 Stück:
Lieferzeit 21-28 Tag (e)IRF540ZPBF Produktcode: 42002 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.0266
Ciss, pF/Qg, nC: 1770/42
JHGF: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 100
Idd,A: 36
Rds(on), Ohm: 0.0266
Ciss, pF/Qg, nC: 1770/42
JHGF: THT
verfügbar: 208 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.54 EUR |
10+ | 0.52 EUR |
UF5401 Produktcode: 67600 |
Hersteller: Vishay
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-201AD
Urev.,V: 100
Iausricht.,А: 3
Beschreibung: Gleichrichter
Монтаж: THT
Падіння напруги Vf: 1 V
Dioden, Diodenbrücken, Zenerdioden > Gleichrichter- und Schaltdioden
Gehäuse: DO-201AD
Urev.,V: 100
Iausricht.,А: 3
Beschreibung: Gleichrichter
Монтаж: THT
Падіння напруги Vf: 1 V
verfügbar: 2 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.08 EUR |
UF5402-DIO Produktcode: 121260 |
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201AD
Vrr, V: 200 V
Iav, A: 3 A
Trr, ns: 50 ns
Gehäuse: DO-201AD
Vrr, V: 200 V
Iav, A: 3 A
Trr, ns: 50 ns
auf Bestellung 243 Stück:
Lieferzeit 21-28 Tag (e)UF5404 PBF Produktcode: 20919 |
Hersteller: Diodes
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201
Vrr, V: 400
Iav, A: 3
Trr, ns: 50
Austauschbar:: UF5408
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-201
Vrr, V: 400
Iav, A: 3
Trr, ns: 50
Austauschbar:: UF5408
auf Bestellung 12 Stück:
Lieferzeit 21-28 Tag (e)UF5408 Produktcode: 27170 |
Hersteller: Vishay
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-27
Vrr, V: 1000
Iav, A: 3
Trr, ns: 75
Dioden, Diodenbrücken, Zenerdioden > Dioden superschnelle
Gehäuse: DO-27
Vrr, V: 1000
Iav, A: 3
Trr, ns: 75
verfügbar: 358 Stück
erwartet:
2000 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.14 EUR |
10+ | 0.12 EUR |
100+ | 0.11 EUR |
1000+ | 0.071 EUR |
Модуль с 4х MOSFET IRF540 Produktcode: 193624 |
Modulare Elemente > Arduino und andere modulare Elemente
Опис: Шилд для керування навантаженням. Модуль складається із 4х MOSFET IRF540. Також на платі встановлена мікросхема PS8201 (оптопара) для ізоляції контролера від навантаження. Може використовуватись тільки для керування ланцюгом постійного струму. Навантаження максимум: 9...100VDC (25А). Управління сигналом від МК: 5В.
Тип: Шилд комутуючі
Опис: Шилд для керування навантаженням. Модуль складається із 4х MOSFET IRF540. Також на платі встановлена мікросхема PS8201 (оптопара) для ізоляції контролера від навантаження. Може використовуватись тільки для керування ланцюгом постійного струму. Навантаження максимум: 9...100VDC (25А). Управління сигналом від МК: 5В.
Тип: Шилд комутуючі
erwartet:
30 Stück
F54019-000 |
Hersteller: TE Connectivity
Hexa Shield ADAPTER
Hexa Shield ADAPTER
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 731.66 EUR |
2+ | 663.41 EUR |
F54050004 |
Hersteller: Honeywell
Industrial Potentiometer
Industrial Potentiometer
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 510.81 EUR |
2+ | 456.08 EUR |
AUIRF540Z |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.69 EUR |
31+ | 2.37 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
AUIRF540Z |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 46 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 2.69 EUR |
31+ | 2.37 EUR |
35+ | 2.06 EUR |
37+ | 1.94 EUR |
C274ACF5400LF0J |
Hersteller: KEMET
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5%
Capacitance: 40µF
Operating temperature: -25...85°C
Tolerance: ±5%
Body dimensions: Ø50x120mm
Mounting: M8 screw
Type of capacitor: polypropylene
Leads: leads 40mm
Operating voltage: 470V AC
Service life: 10000h
Capacitors series: C27
Climate class: 25/085/21
Capacitor application: motors, run
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5%
Capacitance: 40µF
Operating temperature: -25...85°C
Tolerance: ±5%
Body dimensions: Ø50x120mm
Mounting: M8 screw
Type of capacitor: polypropylene
Leads: leads 40mm
Operating voltage: 470V AC
Service life: 10000h
Capacitors series: C27
Climate class: 25/085/21
Capacitor application: motors, run
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
5+ | 15.29 EUR |
C274ACF5400LF0J |
Hersteller: KEMET
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5%
Capacitance: 40µF
Operating temperature: -25...85°C
Tolerance: ±5%
Body dimensions: Ø50x120mm
Mounting: M8 screw
Type of capacitor: polypropylene
Leads: leads 40mm
Operating voltage: 470V AC
Service life: 10000h
Capacitors series: C27
Climate class: 25/085/21
Capacitor application: motors, run
Anzahl je Verpackung: 1 Stücke
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 470VAC; Ø50x120mm; -25÷85°C; ±5%
Capacitance: 40µF
Operating temperature: -25...85°C
Tolerance: ±5%
Body dimensions: Ø50x120mm
Mounting: M8 screw
Type of capacitor: polypropylene
Leads: leads 40mm
Operating voltage: 470V AC
Service life: 10000h
Capacitors series: C27
Climate class: 25/085/21
Capacitor application: motors, run
Anzahl je Verpackung: 1 Stücke
auf Bestellung 41 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 24.58 EUR |
5+ | 15.29 EUR |
C276CCF5400LG0J |
Hersteller: KEMET
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 420VAC; Ø45x95mm; -25÷85°C; ±5%
Capacitance: 40µF
Climate class: 25/085/21
Capacitor application: motors, run
Leads: leads 40mm
Body dimensions: Ø45x95mm
Type of capacitor: polypropylene
Mounting: M8 screw
Capacitors series: C27
Operating voltage: 420V AC
Tolerance: ±5%
Service life: 10000h
Operating temperature: -25...85°C
Anzahl je Verpackung: 1 Stücke
Category: Motor capacitors
Description: Capacitor: motors, run; 40uF; 420VAC; Ø45x95mm; -25÷85°C; ±5%
Capacitance: 40µF
Climate class: 25/085/21
Capacitor application: motors, run
Leads: leads 40mm
Body dimensions: Ø45x95mm
Type of capacitor: polypropylene
Mounting: M8 screw
Capacitors series: C27
Operating voltage: 420V AC
Tolerance: ±5%
Service life: 10000h
Operating temperature: -25...85°C
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF540 |
Hersteller: Siliconix
N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10 IRF540 TIRF540
Anzahl je Verpackung: 50 Stücke
N-MOSFET 27A 100V 125W 0.052Ω Replacement: STP30NF10 IRF540 TIRF540
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 2.4 EUR |
IRF540N |
Hersteller: International Rectifier
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n
Anzahl je Verpackung: 50 Stücke
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 8000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.59 EUR |
IRF540N |
Hersteller: International Rectifier
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n
Anzahl je Verpackung: 50 Stücke
N-MOSFET 33A 100V 130W 0.044Ω IRF540N TIRF540n
Anzahl je Verpackung: 50 Stücke
auf Bestellung 585 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.59 EUR |
IRF540NL |
Hersteller: International Rectifier
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 3.01 EUR |
IRF540NL |
Hersteller: International Rectifier
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 44 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.75 EUR |
IRF540NL |
Hersteller: International Rectifier
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 33A 100V 130W 0,044Ω IRF540NL TIRF540nl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.75 EUR |
IRF540NPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 140W
Technology: HEXFET®
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 33A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 140W
Technology: HEXFET®
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 33A
auf Bestellung 4713 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.12 EUR |
89+ | 0.81 EUR |
104+ | 0.69 EUR |
113+ | 0.64 EUR |
119+ | 0.6 EUR |
500+ | 0.58 EUR |
IRF540NPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 140W
Technology: HEXFET®
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 33A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 140W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 140W
Technology: HEXFET®
On-state resistance: 44mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 47.3nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 33A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4713 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
65+ | 1.12 EUR |
89+ | 0.81 EUR |
104+ | 0.69 EUR |
113+ | 0.64 EUR |
119+ | 0.6 EUR |
500+ | 0.58 EUR |
IRF540NPBF |
Hersteller: Infineon
Транз. Пол. БМ N-HEXFET TO220AB Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm
Транз. Пол. БМ N-HEXFET TO220AB Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.15 EUR |
10+ | 2.79 EUR |
IRF540NS |
Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS JSMICRO TIRF540ns JSM
Anzahl je Verpackung: 25 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS JSMICRO TIRF540ns JSM
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.24 EUR |
IRF540NSPBF |
Hersteller: Infineon
Транз. Пол. БМ N-HEXFET D2-PAK Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm
Транз. Пол. БМ N-HEXFET D2-PAK Udss=100V; Id=33A; Pdmax=140W; Rds=0,052 Ohm
auf Bestellung 104 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1.5 EUR |
IRF540NSTRL |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns
Anzahl je Verpackung: 10 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.53 EUR |
IRF540NSTRL |
Hersteller: International Rectifier
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns
Anzahl je Verpackung: 10 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 44mOhm; 33A; 130W; -55°C ~ 175°C; Equivalent: IRF540NS; IRF540NSTRL; IRF540NSTRR; SP001564346; SP001563324; SP001571284; IRF540NS TIRF540ns
Anzahl je Verpackung: 10 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.53 EUR |
IRF540PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 20A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 20A
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
73+ | 0.99 EUR |
78+ | 0.92 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
250+ | 0.74 EUR |
IRF540PBF |
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; 150W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2320 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
67+ | 1.07 EUR |
73+ | 0.99 EUR |
78+ | 0.92 EUR |
88+ | 0.82 EUR |
93+ | 0.77 EUR |
250+ | 0.74 EUR |
IRF540S |
Hersteller: Siliconix
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω IRF540S TIRF540s
Anzahl je Verpackung: 10 Stücke
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω IRF540S TIRF540s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.3 EUR |
IRF540SPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
IRF540SPBF |
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Mounting: SMD
Kind of package: reel; tape
Case: D2PAK; TO263
Power dissipation: 150W
On-state resistance: 77mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 72nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Drain-source voltage: 100V
Drain current: 20A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
21+ | 3.4 EUR |
57+ | 1.26 EUR |
IRF540Z |
Hersteller: International Rectifier
N-MOSFET 36A 100V 92W IRF540Z TIRF540z
Anzahl je Verpackung: 50 Stücke
N-MOSFET 36A 100V 92W IRF540Z TIRF540z
Anzahl je Verpackung: 50 Stücke
auf Bestellung 135 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 2.56 EUR |
IRF540ZPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
auf Bestellung 785 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.24 EUR |
70+ | 1.03 EUR |
83+ | 0.87 EUR |
98+ | 0.74 EUR |
103+ | 0.7 EUR |
250+ | 0.67 EUR |
IRF540ZPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; 92W; TO220AB
Mounting: THT
Kind of package: tube
Case: TO220AB
Power dissipation: 92W
Technology: HEXFET®
On-state resistance: 26.5mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 42nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 785 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
58+ | 1.24 EUR |
70+ | 1.03 EUR |
83+ | 0.87 EUR |
98+ | 0.74 EUR |
103+ | 0.7 EUR |
250+ | 0.67 EUR |
KPAL03F540J |
Hersteller: MIFLEX
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Operating voltage: 250V DC
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø76x70mm
Climate class: 25/70/21
Operating temperature: -25...70°C
Leads: axial
Mounting: THT
Dissipation: 0.0035
Capacitors series: KPAL03
Anzahl je Verpackung: 2 Stücke
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Operating voltage: 250V DC
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø76x70mm
Climate class: 25/70/21
Operating temperature: -25...70°C
Leads: axial
Mounting: THT
Dissipation: 0.0035
Capacitors series: KPAL03
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 96.34 EUR |
KPAL04F540J |
Hersteller: MIFLEX
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Operating voltage: 250V DC
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø76x70mm
Climate class: 25/70/21
Operating temperature: -25...70°C
Leads: radial
Mounting: THT
Dissipation: 0.0035
Capacitors series: KPAL04
Anzahl je Verpackung: 2 Stücke
Category: Audio polypropylene capacitors
Description: Capacitor: aluminum-polypropylene-paper; 4uF; 250VDC; ±5%; THT
Type of capacitor: aluminum-polypropylene-paper
Capacitance: 4µF
Operating voltage: 250V DC
Tolerance: ±5%
Capacitor application: audio equipment
Body dimensions: Ø76x70mm
Climate class: 25/70/21
Operating temperature: -25...70°C
Leads: radial
Mounting: THT
Dissipation: 0.0035
Capacitors series: KPAL04
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 101.96 EUR |
SF5408-TAP |
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Leakage current: 50µA
Reverse recovery time: 75ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Leakage current: 50µA
Reverse recovery time: 75ns
auf Bestellung 2124 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
56+ | 1.28 EUR |
59+ | 1.22 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
1000+ | 0.66 EUR |
SF5408-TAP |
Hersteller: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Leakage current: 50µA
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Leakage current: 50µA
Reverse recovery time: 75ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2124 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
56+ | 1.28 EUR |
59+ | 1.22 EUR |
99+ | 0.73 EUR |
104+ | 0.69 EUR |
1000+ | 0.66 EUR |
UF5400 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
UF5400 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.24 EUR |
UF5400 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; Ammo Pack; Ifsm: 100A; DO201; Ir: 5uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 14.3 EUR |
25+ | 2.86 EUR |
100+ | 0.72 EUR |
225+ | 0.31 EUR |
610+ | 0.12 EUR |
UF5400 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 290 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
290+ | 0.24 EUR |
745+ | 0.096 EUR |
UF5401 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
325+ | 0.21 EUR |
UF5401 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
auf Bestellung 1465 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
660+ | 0.11 EUR |
740+ | 0.097 EUR |
850+ | 0.084 EUR |
910+ | 0.079 EUR |
UF5401 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1465 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
330+ | 0.22 EUR |
660+ | 0.11 EUR |
740+ | 0.097 EUR |
850+ | 0.084 EUR |
910+ | 0.079 EUR |
UF5401 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 325 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
325+ | 0.21 EUR |
750+ | 0.096 EUR |
UF5401 |
Hersteller: Diotec Semiconductor
Випрямний ультрашвидкий діод вивідний; Uзвор, В = 100; Io, А = 3; trr, нс = 50; Тексп, °C = -50...+175; DO-201AD
Випрямний ультрашвидкий діод вивідний; Uзвор, В = 100; Io, А = 3; trr, нс = 50; Тексп, °C = -50...+175; DO-201AD
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 0.3 EUR |
25+ | 0.25 EUR |
100+ | 0.21 EUR |
UF5402 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 2045 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.29 EUR |
645+ | 0.11 EUR |
725+ | 0.099 EUR |
785+ | 0.092 EUR |
820+ | 0.087 EUR |
1250+ | 0.084 EUR |
UF5402 |
Hersteller: DC COMPONENTS
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 150A; DO27; Ufmax: 1V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ifsm: 150A; DO27; Ufmax: 1V; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Max. forward impulse current: 150A
Case: DO27
Max. forward voltage: 1V
Reverse recovery time: 50ns
auf Bestellung 835 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
658+ | 0.11 EUR |
835+ | 0.086 EUR |
UF5402 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
auf Bestellung 9445 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
680+ | 0.11 EUR |
760+ | 0.095 EUR |
890+ | 0.081 EUR |
940+ | 0.076 EUR |
UF5402 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; Ammo Pack; Ifsm: 100A; DO201; 50ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Max. load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 100A
Case: DO201
Max. forward voltage: 1V
Leakage current: 5µA
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 9445 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
680+ | 0.11 EUR |
760+ | 0.095 EUR |
890+ | 0.081 EUR |
940+ | 0.076 EUR |
UF5402 |
Hersteller: YANGJIE TECHNOLOGY
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 3A; tape; Ifsm: 150A; DO201AD; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: superfast switching
Kind of package: tape
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2045 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
250+ | 0.29 EUR |
645+ | 0.11 EUR |
725+ | 0.099 EUR |
785+ | 0.092 EUR |
820+ | 0.087 EUR |
1250+ | 0.084 EUR |
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