Hersteller: ONSEMI
Description: ONSEMI - FDD6685 - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 0.014 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.8V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.014ohm

Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) DPAK T/R

Hersteller: ONSEMI
Description: ONSEMI - FDD6685 - Leistungs-MOSFET, p-Kanal, 30 V, 40 A, 0.014 ohm, TO-252 (DPAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.8V
euEccn: NLR
Verlustleistung: 52W
Bauform - Transistor: TO-252 (DPAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: Multicomp Pro RJ45 Adapter
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.014ohm

Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) DPAK T/R

Hersteller: onsemi / Fairchild
MOSFET 30V P-Channel PowerTrench

Hersteller: onsemi
Description: MOSFET P-CH 30V 11A/40A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 52W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V

Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced

Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) DPAK T/R

Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 11A 3-Pin(2+Tab) DPAK T/R

Hersteller: onsemi
Description: MOSFET P-CH 30V 11A/40A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 52W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V

Hersteller: onsemi
Description: MOSFET N-CH 60V SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 11A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1715 pF @ 15 V

Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -40A; 52W; DPAK
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -40A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 30mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke